1.6 GHz SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS
.230 2LFL (M151)
hermeti cally sealed
.1.65 GHz
.28 VOLTS
.GOLD METALLIZED SYSTEM
.POLYSILICON SITE BALLASTING
.OVERLAY DIE GEOMETRY
.HIGH RELIABILITY AND RUGGEDNESS
.POUT = 5.0 W MIN. WITH 14.0 dB GAIN
DESCRIPTION
The SD1891-03 is a 28 V silicon NPN transistor
designed for IN MARSAT and other 1.6 GHz SAT-
COM applications. This device utilizes polysilicon
si te ballas ting wi th a gold metal lized die to ach iev e
high reliability and ruggedness.
PIN CONNECTION
BRANDING
1891-03
OR DER COD E
SD1891-03
ABSOLUTE M AXIMUM RATINGS (T case = 25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 3.5 V
ICDevice Current 1. 1 A
PDISS Power Dissipation 8.8 W
TJJunction Temperature +200 °C
TSTG Storage Temperature − 65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance 20 .0 °C/W
SD1891-03
1. Collector 3. Base
2. Emitter
THERMAL DATA
March 1993 1/5