ee FAIRCHILD ee SEMICONDUCTOR 2N3904 MMBT3904 SOT-23 B Mark: 1A SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absol ute Maxi mum Ratings* TA = 25C unless otherwise noted vO6ELZd / VO6ELGWIWN / PO6GENZ Symbol Parameter Value Units Veceo Collector-Emitter Voltage 40 Vv Veso Collector-Base Voltage 60 Vv Veo Emitter-Base Voltage 6.0 Vv Io Collector Current - Continuous 200 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 1997 Fairchild Semiconductor CorporationElectrical Characteristics NPN General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vipryceo Collector-Emitter Breakdown Voltage lo = 1.0 mA, Ig = 0 40 Vv Vipryco Collector-Base Breakdown Voltage lo = 10 pA, le =0 60 Vv VieR)EBO Emitter-Base Breakdown Voltage le =10 pA, Io =0 6.0 Vv IBL Base Cutoff Current Voce = 30 V, Veg = 0 50 nA loex Collector Cutoff Current Voce = 30 V, Veg = 0 50 nA ON CHARACTERISTICS* hee DC Current Gain lo = 0.1 MA, Voge = 1.0 V 40 lo = 1.0 mA, Voce = 1.0 V 70 lo = 10 mA, Voce = 1.0 V 100 300 lo = 50 mA, Voce = 1.0 V 60 lo = 100 mA, Voe = 1.0 V 30 Veetsat) Collector-Emitter Saturation Voltage lo = 10 mA, Ip = 1.0 mA 0.2 Vv Ip = 50 mA, Ip = 5.0 mA 0.3 Vv Vec;sat) Base-Emitter Saturation Voltage lo = 10 mA, Iz = 1.0 MA 0.65 0.85 Vv Ip = 50 mA, Ip = 5.0 mA 0.95 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product lo = 10 MA, Voce = 20 V, 300 MHz f = 100 MHz Cobo Output Capacitance Ves = 5.0 V, le =0, 4.0 pF f = 1.0 MHz Cibo Input Capacitance Veg = 0.5 V, Io =0, 8.0 pF f = 1.0 MHz NF Noise Figure (except MMPQ3904) Io = 100 WA, Vee = 5.0 V, 5.0 dB Rg =1.0kQ, f=10 Hz to 15.7 kHz SWITCHING CHARACTERISTICS (except MMPQ3904) ty Delay Time Veco = 3.0 V, Vee = 0.5 V, 35 ns t Rise Time lo = 10 mA, Ip; = 1.0 MA 35 ns ts Storage Time Voc = 3.0 V, Io = 10MA 200 ns Fall Time Ip1 = Ipo = 1.0 MA 50 ns t * Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0% Spice Model NPN (Is=6.734f Xtiz3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=O Ikr=0 Re=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fo=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) vO6ELZd / VO6ELGWIWN / PO6GENZThermal Characteristics NPN General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Characteristic Max Units 2N3904 *PZT3904 Pp Total Device Dissipation 625 1,000 mw Derate above 25C 5.0 8.0 mW/C Resco Thermal Resistance, Junction to Case 83.3 C/W Resa Thermal Resistance, Junction to Ambient 200 125 C/W Symbol Characteristic Max Units **MMBT3904 MMPQ3904 Pp Total Device Dissipation 350 1,000 mW Derate above 25C 2.8 8.0 mW/C Resa Thermal Resistance, Junction to Ambient 357 C/W Effective 4 Die 125 CAV Each Die 240 C/W * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 em?. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Typical Characteristics 500 400 300 200 100 0.1 hee - TYPICAL PULSED CURRENT GAIN Vaesar BASE-EMITTER VOLTAGE (V) 0.1 Typical Pulsed Current Gain vs Collector Current Voge =5V 1 10 100 | - COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current B =10 1 10 100 I, - COLLECTOR CURRENT (mA) Collector-Emitter Saturation a o Q a Voesar: COLLECTOR-EMITTER VOLTAGE (V) a B =10 1 10 I, - COLLECTOR CURRENT (mA) Voltage vs Collector Current 100 Base-Emitter ON Voltage vs Voce =5V -40 n Vecony BASE-EMITTER ON VOLTAGE (V) oo a Collector Current c 1 10 |, - COLLECTOR CURRENT (mA) 100 vO6ELZd / VO6ELGWIWN / PO6GENZNPN General Purpose Amplifier (continued) Typical Characteristics (continued) Collector-Cutoff Current vs Ambient Temperature Iggo7 COLLECTOR CURRENT (nA) | | 25 50 75 100 125 150 T, - AMBIENT TEMPERATURE (C) Noise Figure vs Frequency nm Io =1.0mA Rg = 2000 Vce=5.0V o 1g =50HA Rg =1.0k2 ao I =0.5mA Rg = 2002 o NF - NOISE FIGURE (dB) BK nm Ico =100pHA,Rg =50092 1 10 100 f - FREQUENCY (kHz) Current Gain and Phase Angle vs Frequency Nee 20 40 60 80 100 33 120m 140 Vog = 40V 160 ic=10mA 180 53a -6 1 10 100 1000 f - FREQUENCY (MHz) Capacitance vs Reverse Bias Voltage f= 1.0 MHz c = WW o Zz 5 a a < o 0.1 1 10 100 REVERSE BIAS VOLTAGE (V) Noise Figure vs Source Resistance 12 Ic=1.0mA fm 10 2 Ar I=5.0 mA x 8 2 ra 8 2 Qo 4 |= 100 pA Le Zz 2 0 0.1 1 10 100 R g - SOURCE RESISTANCE (kQ) Power Dissipation vs Ambient Temperature 1 = SOT-223 3 0.75 = a a a 0.5 [a = 0.25 a a 0 25 50 75 100 125 150 TEMPERATURE (C) vO6ELZd / VO6ELGWIWN / PO6GENZNPN General Purpose Amplifier (continued) Typical Characteristics (continued) Turn-On Time vs Collector Current 500 Ie Ipi=! 70 =~ 100 a = Lu t , @Voc=3.0V 2 ke 10 t gy @Vcp =0V 5 1 10 100 I - COLLECTOR CURRENT (mA) Storage Time vs Collector Current 500 a Wu = 100 F Ty =125C Wu 5 < S ke a ~ 10 ao 10 100 Ig - COLLECTOR CURRENT (mA) 1 t , - RISE TIME (ns) t + - FALL TIME (ns) Rise Time vs Collector Current 500 le Ip1=\2=5 Voc = 40V o oO 1 10 100 |g - COLLECTOR CURRENT (mA) Fall Time vs Collector Current lc Ip1=!po= Ty =125C Veo = 40V 1 10 100 Ie - COLLECTOR CURRENT (mA) vO6ELZd / VO6ELGWIWN / PO6GENZNPN General Purpose Amplifier (continued) Test Circuits 3.0V >) 300 ns hs 275 2 ! Duty Cycle = 2% ty cy 10 Ka 0 L -0.5V -T C, < 4.0 pF all 275 Q C, < 4.0 pF L Tt FIGURE 2: Storage and Fall Time Equivalent Test Circuit vO6ELZd / VO6ELGWIWN / PO6GENZTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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