SOLID STATE INC. 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .. designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DC Current Gain hFE = 1000(Min) @ |, = 20A * Monolithic Construction with Built-in Base-Emitter Shunt Resistor MAXIMUM RATINGS PNP NPN MJ11011 MJ11012 MJ11013 MJ11014 MJ11015 MJ11016 30 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 60-120 VOLTS 200 WATTS Characteristic Symbol | MJ11011 | MJ11013 | MJ11015 | Unit MJ11012 | MJ11014 | MJ11016 Collector-Emitter Voltage VoEo 60 90 120 Vv COllector-Base Voitage Vono 60 90 120 Vv Emitter-Base Voltage Vepo 5.0 Vv Collector Current-Continuous le 30 A -Peak lom 50 Base Current 'p 1.0 A Total Power Dissipation @T,.= 25C Py 200 Ww Derate above 25C 1.15 wrc Operating and Storage Junction T,.Tst C Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case| Rejc 0.87 C FIGURE -1 POWER DERATING 200 a 175 E = 150 g 125 100 3 Qa 7 oa = 50 o . 25 a oO 0 2 5 7% 100 125 150 175 200 To , TEMPERATURE(*C) B i i aan [~coeepeeertcas ot G D F _ H | eel - = } \ 9 pokey @) KE 1 aah. eee 4 A PIN 1.BASE 2.EMMTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 38.75 | 30.96 B 19.28 | 22.233 Cc 7.96 9.28 D 11.18 12.19 E 29.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 | 30.40 { 16.64 | 17.30 J 3.88 436 K 10.67 11.18MJ11011, MJ11013, MJ11015 PNP /MJ11012, MJ11014, MJ11016 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vego(sus) (lI, = 100 mA, I, = 0) MJ11011,MJ11012 60 MJ11013,MJ11014 90 MJ11015,MJ11016 120 Collector Cutoff Current Iceo (Veg = 50 V, I, = 0.0) 1.0 Collector-Emitter Leakage Current lcer mA ( Veg = 60 V,Rg,= 1.0k ohm ) MJ11011,MJ11012 ( Veg = 90 V,Ry,= 1.0k ohm ) MJ11013,MJ11014 ( Veg = 120 V,R,= 1.0k ohm ) MJ11015,MJ11016 ( Veg = 60 V,Rg, = 1.0k ohm ,T, = 125C ) MJ11011,MJ11012 ( Veg = 90 V,R,, = 1.0k ohm, T, =125C ) MJ11013,MJ11014 (Veg = 120 V,Rgy = 1.0k ohm,T, =125C ) MJ11015,MJ11016 Emitter Cutoff Current leso ( Veg = 5.0 V,Io=0 ) 5.0 oooqooo0oo ON CHARACTERISTICS (1) DC Current Gain hFE (I, = 20A, V. = 5.0V) 1000 (l, =30A, V., =5.0V) 200 Collector-Emitter Saturation Voltage VoE;sat) (I, = 20A, |, = 200 mA) 3.0 (lp = 30A, I, = 300 mA) 4.0 Base-Emitter Saturation Voltage Vee(saty V (i, = 20A, I, = 200 mA) 3.5 (|, =30A, I, = 300 mA) ) 5.0 DYNAMIC CHARACTERISTICS Small-Signal Current Gain | hy, | (lo = 10 A, Voge = 3.0 V, f = 1.0 MHz) 4.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle & 2.0% (2) f, = (hy. F sest INTERNAL SCHEMATIC DIAGRAM Collector NPN PNP MJ11011 pa ------po 1 MJ11012 MJ11013 MJ11014 MJ11015 ase MJ11016 B TT t | | | [ ~8.0kK] ~40 ' Collector le t& a . 3 ed, AA AA WY WA t Emitter EmitterMJ141011,13,15 PNP /MJ11012,14,16 NPN a DC CURRENT GAIN SMALL-SIGNAL CURRENT GAIN 30k 20k 10k a < 5k uf : 3 & 2k 2 3 z gi 3 Veet5.0V Tya25C 200 03 #05 O07 10 20 30 50 70 10 20 (30 10 20 50 100 200 500 1k fe, COLLECTOR CURRENT (AMP) {, FREQUENCY (kHz) "ON" VOLTAGES "ON" VOLTAGES 5 PNP MJ11011,MJ11013,MJ1 NPN MJ11012,MJ11014,MJ1 4 a 1,25 C z Ty=25 C 5 5 6 3 = ] w w o @ 52 g @lcfa*100 8 Vee(eat) Bic/la=100 > > @ Io/g100 4 @icha=100 0 0.1 0.2 05 1.0 2.0 5.0 40 20 50 04 0.2 0s = 4.0 2.0 5.0 10 20 50 IC , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second = breakdown safe operating area curves indicate Ic-Vce & 5 limits of the transistor that must be observed for reliable 2 operation i.e., the transistor must not be subjected to e 4 Bondng Wire Lint greater dissipation than curves indicate. By gh = Second Breakdown Lint The data of SOA curve: is base on T 4p9=200 C;T is 5 ~~ m " Mee "ange Puss) variable depending on conditions. second breakdown y pulse limits are valid for duty cycles to 10% provided 8 0.4 T.uypS200C,At high case temperatures, thermal limita - 3 MJ11011,Mu4 tion will reduce the power that can be handled to values Mor iots Mt less than the limitations imposed by second breakdown. 2 5 10 20 50 100 200 Vee, COLLECTOR EMITTER VOLTAGE (VOLTS)