PHPT61010PYX - NXP SEMICONDUCTORS

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PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

20 March 2015 Product data sheet

Scan or click this QR code to view the latest information for this product

1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

NPN complement: PHPT61010NY.

2. Features and benefits

•High thermal power dissipation capability

•Suitable for high temperature applications up to 175 °C

•Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

•High energy efficiency due to less heat generation

•AEC-Q101 qualified

3. Applications

•Power management

•Load switch

•Linear mode voltage regulator

•Backlighting applications

•Motor drive

•Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter

voltage

open base - - -100 V

ICcollector current - - -10 A

ICM peak collector current tp ≤ 1 ms; single pulse - - -20 A

RCEsat collector-emitter

saturation resistance

IC = -10 A; IB = -1 A; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C; pulsed

- 53 80 mΩ

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 2 / 16

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 E emitter

2 E emitter

3 E emitter

4 B base

mb C collector

1 2 3 4

LFPAK56; Power-

SO8 (SOT669)

sym132

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PHPT61010PY LFPAK56;

Power-SO8

Plastic single-ended surface-mounted package (LFPAK56;

Power-SO8); 4 leads

SOT669

7. Marking

Table 4. Marking codes

Type number Marking code

PHPT61010PY 1010PAB

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 3 / 16

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - -100 V

VCEO collector-emitter voltage open base - -100 V

VEBO emitter-base voltage open collector - -8 V

ICcollector current - -10 A

ICM peak collector current tp ≤ 1 ms; single pulse - -20 A

IBbase current - -1 A

IBM peak base current tp ≤ 1 ms; pulsed - -2 A

[1] - 1.5 W

[2] - 3.7 W

[3] - 5 W

Ptot total power dissipation Tamb ≤ 25 °C

[4] - 25 W

Tjjunction temperature - 175 °C

Tamb ambient temperature -55 175 °C

Tstg storage temperature -65 175 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 Printed-Circuit Board ( PCB), single-sided copper, tin-plated mounting pad for

collector 6 cm2.

[3] Device mounted on an ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

[4] Power dissipation from junction to mounting base.

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 4 / 16

aaa-015929

Tamb (°C)

-75 22512525

Ptot

(W)

(1)

(2)

(3)

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, standard footprint

Fig. 1. Power derating curves

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1] - - 100 K/W

[2] - - 41 K/W

Rth(j-a) thermal resistance

from junction to

ambient

in free air

[3] - - 30 K/W

Rth(j-mb) thermal resistance

from junction to

mounting base

- - 6 K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad

for collector 6 cm2.

[3] Device mounted on an ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 5 / 16

dut

102

103

Zth(j-a)

(K/W)

10-1

10-5 1010-2

10-4 102

10-1

tp (s)

10-3 103

aaa-015930

FR4 PCB, standard footprint

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-015931

10-5 1010-2

10-4 102

10-1

tp (s)

10-3 103

102

Zth(j-a)

(K/W)

10-1

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

FR4 PCB, mounting pad for collector 6 cm2

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 6 / 16

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

VCB = -80 V; IE = 0 A; Tamb = 25 °C - - -100 nAICBO collector-base cut-off

current VCB = -80 V; IE = 0 A; Tj = 150 °C - - -50 µA

ICES collector-emitter cut-off

current

VCE = -80 V; VBE = 0 V; Tamb = 25 °C - - -100 nA

IEBO emitter-base cut-off

current

VEB = -8 V; IC = 0 A; Tamb = 25 °C - - -100 nA

VCE = -2 V; IC = -0.5 A; Tamb = 25 °C 180 330 -

VCE = -2 V; IC = -1 A; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C; pulsed

170 265 -

VCE = -2 V; IC = -5 A; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C; pulsed

60 75 -

hFE DC current gain

VCE = -2 V; IC = -10 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

10 15 -

IC = -1 A; IB = -50 mA; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C

- -55 -90 mV

IC = -5 A; IB = -0.5 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- -160 -250 mV

VCEsat collector-emitter

saturation voltage

IC = -10 A; IB = -1 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- -530 -800 mV

RCEsat collector-emitter

saturation resistance

IC = -10 A; IB = -1 A; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C; pulsed

- 53 80 mΩ

IC = -1 A; IB = -50 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- - -0.9 V

IC = -5 A; IB = -0.5 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- - -1.1 V

VBEsat base-emitter saturation

voltage

IC = -10 A; IB = -1 A; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

- - -1.3 V

VBEon base-emitter turn-on

voltage

VCE = -2 V; IC = -0.5 A; Tamb = 25 °C - - -0.8 V

tddelay time - 20 - ns

trrise time - 145 - ns

ton turn-on time - 165 - ns

tsstorage time - 155 - ns

tffall time - 80 - ns

toff turn-off time

VCC = -12.5 V; IC = -5 A;

IBon = -250 mA; IBoff = 250 mA;

Tamb = 25 °C

- 235 - ns

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 7 / 16

Symbol Parameter Conditions Min Typ Max Unit

fTtransition frequency VCE = -10 V; IC = -500 mA;

f = 100 MHz; Tamb = 25 °C

- 90 - MHz

Cccollector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

- 101 - pF

aaa-015932

200

300

100

400

500

hFE

IC (mA)

-10-1 -104

-103

-1 -102

-10

(1)

(2)

(3)

VCE = −2 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 4. DC current gain as a function of collector

current; typical values

VCE (V)

0 -5-4-2 -3-1

aaa-015933

-4

-6

-2

-8

-10

(A)

IB= -240 mA

-160

-100

-10

-5

-15

-20

-30

-50

-70

Tamb = 25 °C

Fig. 5. Collector current as a function of collector-

emitter voltage; typical values

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 8 / 16

aaa-014834

-0.6

-0.8

-0.4

-1.0

-1.2

VBE

(V)

-0.2

IC (mA)

-10-1 -104

-103

-1 -102

-10

(1)

(2)

(3)

VCE = −2 V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 6. Base-emitter voltage as a function of collector

current; typical values

aaa-014835

-0.6

-0.8

-0.4

-1.0

-1.2

VBEsat

(V)

-0.2

IC (mA)

-10-1 -104

-103

-1 -102

-10

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 7. Base-emitter saturation voltage as a function of

collector current; typical values

aaa-015936

IC (mA)

-10-1 -104

-103

-1 -102

-10

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 8. Collector-emitter saturation voltage as a

function of collector current; typical values

aaa-015937

IC (mA)

-10-1 -104

-103

-1 -102

-10

-10-1

-1

VCEsat

(V)

-10-2

(3)

(1)

(2)

(4)

Tamb = 25 °C

(1) IC/IB = 100

(2) IC/IB = 50

(3) IC/IB = 20

(4) IC/IB = 10

Fig. 9. Collector-emitter saturation voltage as a

function of collector current; typical values

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 9 / 16

IC (mA)

-10-1 -104

-103

-1 -102

-10

aaa-015938

10-1

102

103

RCEsat

(Ω)

10-2

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 10. Collector-emitter saturation resistance as a

function of collector current; typical values

IC (mA)

-10-1 -104

-103

-1 -102

-10

aaa-015939

10-1

102

103

RCEsat

(Ω)

10-2

(1)

(2)

(3)

(4)

Tamb = 25 °C

(1) IC/IB = 100

(2) IC/IB = 50

(3) IC/IB = 20

(4) IC/IB = 10

Fig. 11. Collector-emitter saturation resistance as a

function of collector current; typical values

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 10 / 16

11. Test information

006aaa266

-IBon (100 %)

-IB

input pulse

(idealized waveform)

-IBoff

90 %

10 %

-IC(100 %)

-IC

ton

90 %

10 %

output pulse

(idealized waveform)

toff

Fig. 12. BISS transistor switching time definition

DUT

mgd624

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Fig. 13. Test circuit for switching times

11.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 11 / 16

12. Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT669 MO-235

sot669_po

11-03-25

13-02-27

Unit(1)

max

nom

min

1.20

1.01

0.15

0.00

0.25

0.50

0.35

4.41

3.62

2.2

2.0

6.2

5.8

0.85

0.40

Dimensions (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669

A1A2

1.10

0.95

A3b b2b3

0.1

L2w y

8°

0°

b4c c2D(1) D1(1) E(1) E1(1)

3.3

3.1

1.27

H L

0.25

0.19

0.30

0.24

4.20 1.3

0.8

0.25

0.9

0.7

4.10

3.80

5.0

4.8

1.3

0.8

A C

1/2 e

w A

0 5 mm

scale

12 3 4

mounting

base

y C

(A3)

detail X

Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 12 / 16

13. Soldering

0.6

(3×)

0.7

(4×)

0.25

(2×)

0.25

(2×)

0.6

(4×)

4.2

4.7

0.25

(2×)

1.27

1.1

3.81

0.9

(3×)

SP opening =

Cu - 0.050

SR opening =

Cu + 0.075

2.15

2.55

3.45 3.5

3.3

solder lands

solder resist occupied area

solder paste

125 µm stencil

Dimensions in mm

SOT669

Footprint information for reflow soldering

sot669_fr

Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 13 / 16

14. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PHPT61010PY v.1 20150320 Product data sheet - -

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 14 / 16

15. Legal information

15.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

15.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

15.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, NXP Semiconductors does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. Unless otherwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their

applications and products using NXP Semiconductors products, and NXP

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the NXP Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 15 / 16

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,

HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,

MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP

Semiconductors N.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors PHPT61010PY

100 V, 10 A PNP high power bipolar transistor

Product data sheet 20 March 2015 16 / 16

16. Contents

1 General description ............................................... 1

2 Features and benefits ............................................1

3 Applications ........................................................... 1

4 Quick reference data ............................................. 1

5 Pinning information ............................................... 2

6 Ordering information ............................................. 2

7 Marking ................................................................... 2

8 Limiting values .......................................................3

9 Thermal characteristics .........................................4

10 Characteristics ....................................................... 6

11 Test information ................................................... 10

11.1 Quality information ............................................. 10

12 Package outline ................................................... 11

13 Soldering .............................................................. 12

14 Revision history ................................................... 13

15 Legal information .................................................14

15.1 Data sheet status ............................................... 14

15.2 Definitions ...........................................................14

15.3 Disclaimers .........................................................14

15.4 Trademarks ........................................................ 15

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 March 2015