LM5113 www.ti.com SNVS725F - JUNE 2011 - REVISED APRIL 2013 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Check for Samples: LM5113 FEATURES 1 * 2 * * * * * * * * * Independent High-Side and Low-Side TTL Logic Inputs 1.2A/5A Peak Source/Sink Current High-Side Floating Bias Voltage Rail Operates up to 100VDC Internal Bootstrap Supply Voltage Clamping Split Outputs for Adjustable Turn-on/Turn-off Strength 0.6 /2.1 Pull-down/Pull-up Resistance Fast Propagation Times (28ns Typical) Excellent Propagation Delay Matching (1.5ns Typical) Supply Rail Under-Voltage Lockout Low Power Consumption TYPICAL APPLICATIONS * * * * * Current Fed Push-Pull converters Half and Full-Bridge converters Synchronous Buck converters Two-switch Forward converters Forward with Active Clamp converters DESCRIPTION The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently. In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance. PACKAGES * * WSON-10 (4 mm x 4 mm) DSBGA (2 mm x 2 mm) 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2011-2013, Texas Instruments Incorporated LM5113 SNVS725F - JUNE 2011 - REVISED APRIL 2013 www.ti.com Typical Application HB UVLO & CLAMP HOH LEVEL SHIFT HOL HS HI VDD UVLO LOH LOL LI VSS Figure 1. Truth Table 2 HI LI HOH HOL LOH L L Open L Open L L H Open L H Open H L H Open Open L H H H Open H Open Submit Documentation Feedback LOL Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 LM5113 www.ti.com SNVS725F - JUNE 2011 - REVISED APRIL 2013 Connection Diagram VDD 1 10 LOH HB 2 9 LOL HOH 3 8 VSS HOL 4 7 LI HS 5 6 HI Exposed Pad Figure 2. WSON Package Package Number DPR0010A A LOL B LOL A HI LOH B VDD VDD HS C HB HS HS HB HOH HOL D 3 4 4 3 2 1 LI LI LOH HI C HS D HOL HOH 1 2 VSS VDD VDD VSS Bump Side Top View DSBGA Package Package Number YFX0012FLA PIN DESCRIPTIONS Pin Number (1) Name DSBGA WSON-10 A3, C4 (1) 1 VDD D3 2 HB D2 3 D1 Description Applications Information 5V Positive gate drive supply Locally decouple to VSS using low ESR/ESL capacitor located as close to the IC as possible. High-side gate driver bootstrap rail Connect the positive terminal of the bootstrap capacitor to HB and the negative terminal to HS. The bootstrap capacitor should be placed as close to the IC as possible. HOH High-side gate driver turn-on output Connect to the gate of high-side GaN FET with a short, low inductance path. A gate resistor can be used to adjust the turn-on speed. 4 HOL High-side gate driver turn-off output Connect to the gate of high-side GaN FET with a short, low inductance path. A gate resistor can be used to adjust the turn-off speed. C1, D4 (1) 5 HS High-side GaN FET source connection Connect to the bootstrap capacitor negative terminal and the source of the high-side GaN FET. B4 6 HI High-side driver control input The LM5113 inputs have TTL type thresholds. Unused inputs should be tied to ground and not left open. A4 7 LI Low-side driver control input The LM5113 inputs have TTL type thresholds. Unused inputs should be tied to ground and not left open. A3 and C4, C1 and D4 are internally connected. Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 3 LM5113 SNVS725F - JUNE 2011 - REVISED APRIL 2013 www.ti.com PIN DESCRIPTIONS (continued) Pin Number Name Description Applications Information DSBGA WSON-10 A2 8 VSS Ground return All signals are referenced to this ground. A1 9 LOL Low-side gate driver sink-current output Connect to the gate of the low-side GaN FET with a short, low inductance path. A gate resistor can be used to adjust the turn-off speed. B1 10 LOH Low-side gate driver sourcecurrent output Connect to the gate of high-side GaN FET with a short, low inductance path. A gate resistor can be used to adjust the turn-on speed. Exposed Pad It is recommended that the exposed pad on the bottom of the package be soldered to ground plane on the PC board to aid thermal dissipation. EP These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) -0.3V to 7V VDD to VSS -0.3V to 7V HB to HS -0.3V to 15V LI or HI Input -0.3V to VDD +0.3V LOH, LOL Output VHS -0.3V to VHB +0.3V HOH, HOL Output HS to VSS -5V to +100V HB to VSS 0 to 107V HB to VDD 0 to 100V Junction Temperature +150C -55C to +150C Storage Temperature Range ESD Rating HBM (1) 2 kV Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is ensured. Operating Ratings do not imply ensured performance limits. For ensured performance limits and associated test conditions, see the Electrical Characteristics tables. Recommended Operating Conditions VDD +4.5V to +5.5V LI or HI Input 0V to +14V HS -5V to 100V HB VHS +4V to VHS +5.5V HS Slew Rate <50 V/ns -40C to +125C Junction Temperature Electrical Characteristics Limits in standard type are for TJ = 25C only; limits in boldface type apply over the junction temperature (TJ) range of -40C to +125C. Minimum and Maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25C, and are provided for reference purposes only. Unless otherwise specified, VDD = VHB = 5V, VSS = VHS = 0V, No Load on LOL and HOL or HOH and HOL (1). Symbol Parameter Conditions Min Typ Max Units SUPPLY CURRENTS IDD VDD Quiescent Current LI = HI = 0V 0.07 0.1 mA IDDO VDD Operating Current f = 500 kHz 2.0 3.0 mA IHB Total HB Quiescent Current LI = HI = 0V 0.08 0.1 mA (1) 4 Min and Max limits are 100% production tested at 25C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL). Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 LM5113 www.ti.com SNVS725F - JUNE 2011 - REVISED APRIL 2013 Electrical Characteristics (continued) Limits in standard type are for TJ = 25C only; limits in boldface type apply over the junction temperature (TJ) range of -40C to +125C. Minimum and Maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25C, and are provided for reference purposes only. Unless otherwise specified, VDD = VHB = 5V, VSS = VHS = 0V, No Load on LOL and HOL or HOH and HOL(1). Symbol Parameter Conditions Min Typ Max Units mA IHBO Total HB Operating Current f = 500 kHz 1.5 2.5 IHBS HB to VSS Current, Quiescent HS = HB = 100V 0.1 8 A IHBSO HB to VSS Current, Operating f = 500 kHz 0.4 1.0 mA INPUT PINS VIR Input Voltage Threshold Rising Edge 1.89 2.06 2.18 V VIF Input Voltage Threshold Falling Edge 1.48 1.66 1.76 V VIHYS Input Voltage Hysteresis RI Input Pulldown Resistance 400 mV 100 200 300 k 3.2 3.8 4.5 V UNDER VOLTAGE PROTECTION VDDR VDD Rising Threshold VDDH VDD Threshold Hysteresis VHBR HB Rising Threshold VHBH HB Threshold Hysteresis 0.2 2.5 V 3.2 3.9 V 0.2 V BOOTSTRAP DIODE VDL Low-Current Forward Voltage IVDD-HB = 100 A 0.45 0.65 V VDH High-Current Forward Voltage IVDD-HB = 100 mA 0.90 1.00 V RD Dynamic Resistance IVDD-HB = 100 mA 1.85 3.60 HB-HS Clamp Regulation Voltage 5.2 5.45 V 4.7 LOW & HIGH SIDE GATE DRIVER VOL Low-Level Output Voltage IHOL = ILOL = 100 mA 0.06 0.10 V VOH High-Level Output Voltage VOH = VDD - LOH or VOH = HB - HOH IHOH = ILOH = 100 mA 0.21 0.31 V IOHL Peak Source Current HOH, LOH = 0V 1.2 IOLL Peak Sink Current HOL, LOL = 5V 5 IOHLK High-Level Output Leakage Current HOH, LOH = 0V 1.5 A IOLLK Low-Level Output Leakage Current HOL, LOL = 5V 1.5 A A A THERMAL RESISTANCE Junction to Ambient (2) JA (2) WSON-10 40 C/W 12-bump DSBGA 80 C/W Four layer board with Cu finished thickness 1.5/1/1/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50 x 50mm ground and power planes embedded in PCB. See Application Note AN-1187 SNOA401. Switching Characteristics Limits in standard type are for TJ = 25C only; limits in boldface type apply over the junction temperature (TJ) range of -40C to +125C. Minimum and Maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25C, and are provided for reference purposes only. Unless otherwise specified, VDD = VHB = 5V, VSS = VHS = 0V, No Load on LOL and LOH or HOL and HOH (1). Symbol Parameter Conditions Min Typ Max Units tLPHL LO Turn-Off Propagation Delay LI Falling to LOL Falling 26.5 45.0 ns tLPLH LO Turn-On Propagation Delay LI Rising to LOH Rising 28.0 45.0 ns tHPHL HO Turn-Off Propagation Delay HI Falling to HOL Falling 26.5 45.0 ns tHPLH HO Turn-On Propagation Delay HI Rising to HOH Rising 28.0 45.0 ns tMON Delay Matching: LO on & HO off 1.5 8.0 ns (1) Min and Max limits are 100% production tested at 25C. Limits over the operating temperature range are ensured through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL). Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 5 LM5113 SNVS725F - JUNE 2011 - REVISED APRIL 2013 www.ti.com Switching Characteristics (continued) Limits in standard type are for TJ = 25C only; limits in boldface type apply over the junction temperature (TJ) range of -40C to +125C. Minimum and Maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25C, and are provided for reference purposes only. Unless otherwise specified, VDD = VHB = 5V, VSS = VHS = 0V, No Load on LOL and LOH or HOL and HOH(1). Symbol Parameter Conditions Min Typ Max Units 1.5 8.0 ns tMOFF Delay Matching: LO off & HO on tHRC HO Rise Time (0.5V - 4.5V) CL = 1000 pF 7.0 ns tLRC LO Rise Time (0.5V - 4.5V) CL = 1000 pF 7.0 ns tHFC HO Fall Time (0.5V - 4.5V) CL = 1000 pF 1.5 ns tLFC LO Fall Time (0.5V - 4.5V) CL = 1000 pF 1.5 ns tPW Minimum Input Pulse Width that Changes the Output 10 ns tBS Bootstrap Diode Reverse Recovery Time 40 ns IF = 100mA, IR = 100mA Timing Diagram LI LI HI HI tHPLH tLPLH tHPHL tLPHL LO LO HO HO tMON tMOFF Figure 3. Timing Diagram 6 Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 LM5113 www.ti.com SNVS725F - JUNE 2011 - REVISED APRIL 2013 Typical Performance Characteristics Peak Source Current vs Output Voltage Peak Sink Current vs Output Voltage Figure 4. Figure 5. IDDO vs Frequency IHBO vs Frequency Figure 6. Figure 7. IDD vs Temperature IHB vs Temperature Figure 8. Figure 9. Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 7 LM5113 SNVS725F - JUNE 2011 - REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) 8 UVLO Rising Thresholds vs Temperature UVLO Falling Thresholds vs Temperature Figure 10. Figure 11. Input Thresholds vs Temperature Input Threshold Hysteresis vs Temperature Figure 12. Figure 13. Bootstrap Diode Forward Voltage Propagation Delay vs Temperature Figure 14. Figure 15. Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 LM5113 www.ti.com SNVS725F - JUNE 2011 - REVISED APRIL 2013 Typical Performance Characteristics (continued) (1) LO&HO Gate Drive -- High/Low Level Output Voltage vs Temperature HB Regulation Voltage vs Temperature Figure 16. Figure 17. Note Unless otherwise specified, VDD = VHB = 5V, VSS = VHS = 0V. Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 9 LM5113 SNVS725F - JUNE 2011 - REVISED APRIL 2013 www.ti.com Detailed Operating Description The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride FETs in a synchronous buck or a half-bridge configuration. The outputs of the LM5113 are independently controlled with TTL input thresholds. The inputs of the LM5113 can withstand voltages up to 14V regardless of the VDD voltage, and can be directly connected to the outputs of PWM controllers. The high side driver uses the floating bootstrap capacitor voltage to drive the high-side FET. As shown in Figure 1, the bootstrap capacitor is recharged through an internal bootstrap diode each cycle when the HS pin is pulled below the VDD voltage. For inductive load applications the HS node will fall to a negative potential, clamped by the low side FET. Due to the intrinsic feature of enhancement mode GaN FETs the source-to-drain voltage, when the gate is pulled low, is usually higher than a diode forward voltage drop. This can lead to an excessive bootstrap voltage that can damage the high-side GaN FET. The LM5113 solves this problem with an internal clamping circuit that prevents the bootstrap voltage from exceeding 5.2V typical. The output pull-down and pull-up resistance of LM5113 is optimized for enhancement mode GaN FETs to achieve high frequency, efficient operation. The 0.6 pull-down resistance provides a robust low impedance turnoff path necessary to eliminate undesired turn-on induced by high dv/dt or high di/dt. The 2.1 pull-up resistance helps reduce the ringing and over-shoot of the switch node voltage. The split outputs of the LM5113 offer flexibility to adjust the turn-on and turn-off speed by independently adding additional impedance in either the turnon path and/or the turn-off path. The LM5113 has an Under-voltage Lockout (UVLO) on both the VDD and bootstrap supplies. When the VDD voltage is below the threshold voltage of 3.8V, both the HI and LI inputs are ignored, to prevent the GaN FETs from being partially turned on. Also if there is sufficient VDD voltage, the UVLO will actively pull the LOL and HOL low. When the HB to HS bootstrap voltage is below the UVLO threshold of 3.2V, only HOL is pulled low. Both UVLO threshold voltages have 200mV of hysteresis to avoid chattering. Bypass Capacitor The VDD bypass capacitor provides the gate charge for the low-side and high-side transistors and to absorb the reverse recovery charge of the bootstrap diode. The required bypass capacitance can be calculated as follows: (1) QgH and QgL are gate charge of the high-side and low-side transistors respectively. Qrr is the reverse recovery charge of the bootstrap diode, which is typically around 4nC. V is the maximum allowable voltage drop across the bypass capacitor. A 0.1uF or larger value, good quality, ceramic capacitor is recommended. The bypass capacitor should be placed as close to the pins of the IC as possible to minimize the parasitic inductance. Bootstrap Capacitor The bootstrap capacitor provides the gate charge for the high-side switch, dc bias power for HB under-voltage lockout circuit, and the reverse recovery charge of the bootstrap diode. The required bypass capacitance can be calculated as follows: (2) IHB is the quiescent current of the high-side driver. ton is the maximum on-time period of the high-side transistor. A good quality, ceramic capacitor should be used for the bootstrap capacitor. It is recommended to place the bootstrap capacitor as close to the HB and HS pins as possible. Power Dissipation The power consumption of the driver is an important measure that determines the maximum achievable operating frequency of the driver. It should be kept below the maximum power dissipation limit of the package at the operating temperature. The total power dissipation of the LM5113 is the sum of the gate driver losses and the bootstrap diode power loss. The gate driver losses are incurred by charge and discharge of the capacitive load. It can be approximated as 10 Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 LM5113 www.ti.com SNVS725F - JUNE 2011 - REVISED APRIL 2013 (3) CLoadH and CLoadL are the high-side and the low-side capacitive loads respectively. It can also be calculated with the total input gate charge of the high-side and the low-side transistors as (4) There are some additional losses in the gate drivers due to the internal CMOS stages used to buffer the LO and HO outputs. The following plot shows the measured gate driver power dissipation versus frequency and load capacitance. At higher frequencies and load capacitance values, the power dissipation is dominated by the power losses driving the output loads and agrees well with the above equations. This plot can be used to approximate the power losses due to the gate drivers. Gate Driver Power Dissipation (LO+HO) VDD=+5V Figure 18. Neglecting Bootstrap Diode Losses The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these events happens once per cycle, the diode power loss is proportional to the operating frequency. Larger capacitive loads require more energy to recharge the bootstrap capacitor resulting in more losses. Higher input voltages (VIN) to the half bridge also result in higher reverse recovery losses. The following two plots illustrate the forward bias power loss and the reverse bias power loss of the bootstrap diode respectively. The plots are generated based on calculations and lab measurements of the diode reverse time and current under several operating conditions. The plots can be used to predict the bootstrap diode power loss under different operating conditions. The Load of High-Side Driver is a GaN FET with Total Gate Charge of 10nC Figure 19. Forward Bias Power Loss of Bootstrap Diode VIN=50V Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 11 LM5113 SNVS725F - JUNE 2011 - REVISED APRIL 2013 www.ti.com The Load of High-Side Driver is a GaN FET with Total Gate Charge of 10nC Figure 20. Reverse Recovery Power Loss of Bootstrap Diode VIN=50V The sum of the driver loss and the bootstrap diode loss is the total power loss of the IC. For a given ambient temperature, the maximum allowable power loss of the IC can be defined as (TJ - TA) P= TJA (5) Layout Considerations Small gate capacitance and miller capacitance enable enhancement mode GaN FETs to operate with fast switching speed. The induced high dv/dt and di/dt, coupled with a low gate threshold voltage and limited headroom of enhancement mode GaN FETs gate voltage, make the circuit layout crucial to the optimum performance. Following are some hints. 1. The first priority in designing the layout of the driver is to confine the high peak currents that charge and discharge the GaN FETs gate into a minimal physical area. This will decrease the loop inductance and minimize noise issues on the gate terminal of the GaN FETs. The GaN FETs should be placed close to the driver. 2. The second high current path includes the bootstrap capacitor, the local ground referenced VDD bypass capacitor and low-side GaN FET. The bootstrap capacitor is recharged on a cycle-by-cycle basis through the bootstrap diode from the ground referenced VDD capacitor. The recharging occurs in a short time interval and involves high peak current. Minimizing this loop length and area on the circuit board is important to ensure reliable operation. 3. The parasitic inductance in series with the source of the high-side FET and the low-side FET can impose excessive negative voltage transients on the driver. It is recommended to connect HS pin and VSS pin to the respective source of the high-side and low-side transistors with a short and low-inductance path. 4. The parasitic source inductance, along with the gate capacitor and the driver pull-down path, can form a LCR resonant tank, resulting in gate voltage oscillations. An optional resistor or ferrite bead can be used to damp the ringing. 5. Low ESR/ESL capacitors must be connected close to the IC, between VDD and VSS pins and between the HB and HS pins to support the high peak current being drawn from VDD during turn-on of the FETs. It is most desirable to place the VDD decoupling capacitor and the HB to HS bootstrap capacitor on the same side of the PC board as the driver. The inductance of vias can impose excessive ringing on the IC pins. 6. To prevent excessive ringing on the input power bus, good decoupling practices are required by placing low ESR ceramic capacitors adjacent to the GaN FETs. The following figures show recommended layout patterns for WSON-10 package and DSBGA package respectively. Two cases are considered: (1) Without any gate resistors; (2) With an optional turn-on gate resistor. It should be noted that 0402 DSBGA package is assumed for the passive components in the drawings. For information on DSBGA package assembly, refer to Application Note AN-1112 SNVA009. 12 Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 LM5113 SNVS725F - JUNE 2011 - REVISED APRIL 2013 Bootstrap Capacitor HO To Hi-Side FET HS To Hi-Side FET 2 3 4 5 VDD 1 HB HS 2 3 4 5 VDD 1 HB HS HO HS HOL Bootstrap Capacitor HOH www.ti.com Bypass Capacitor Bypass Capacitor 9 10 LOL LOH LI To Low-Side FET 8 VSS 7 HI LOH 6 10 LOL LI 9 7 HI 8 VSS 6 LO GND LO To Low-Side FET GND Figure 21. WSON-10 Without Gate Resistors Bootstrap Capacitor HO HS Figure 22. WSON-10 With HOH and LOH Gate Resistors Bootstrap Capacitor HO To Hi-Side FET D HS HOL D HS C VDD HS C VDD HS B HI LOH B HI LOH A LI VDD VSS LOL A LI VDD VSS 4 3 2 4 3 2 HB HOH 1 LO Bypass Capacitor To Hi-Side FET HS To Low-Side FET Bypass Capacitor GND Figure 23. DSBGA Without Gate Resistors HB HOH HOL LOL 1 LO GND To Low-Side FET Figure 24. DSBGA With HOH and LOH Gate Resistors Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 13 LM5113 SNVS725F - JUNE 2011 - REVISED APRIL 2013 www.ti.com REVISION HISTORY Changes from Revision E (April 2013) to Revision F * 14 Page Changed layout of National Data Sheet to TI format .......................................................................................................... 13 Submit Documentation Feedback Copyright (c) 2011-2013, Texas Instruments Incorporated Product Folder Links: LM5113 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (C) Device Marking (3) (4/5) (6) LM5113SD/NOPB NRND WSON DPR 10 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 L5113 LM5113SDE/NOPB NRND WSON DPR 10 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 L5113 LM5113SDX/NOPB NRND WSON DPR 10 4500 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 L5113 LM5113TME/NOPB NRND DSBGA YFX 12 250 RoHS & Green SNAGCU Level-1-260C-UNLIM 5113 LM5113TMX/NOPB NRND DSBGA YFX 12 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM 5113 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF LM5113 : * Automotive: LM5113-Q1 NOTE: Qualified Version Definitions: * Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 29-Sep-2019 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing LM5113SD/NOPB WSON DPR 10 LM5113SDE/NOPB WSON DPR LM5113SDX/NOPB WSON DPR LM5113TME/NOPB DSBGA LM5113TMX/NOPB DSBGA SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 10 250 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 10 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 YFX 12 250 178.0 8.4 1.85 2.01 0.76 4.0 8.0 Q1 YFX 12 3000 178.0 8.4 1.85 2.01 0.76 4.0 8.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 29-Sep-2019 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5113SD/NOPB WSON DPR 10 1000 210.0 185.0 35.0 LM5113SDE/NOPB WSON DPR 10 250 210.0 185.0 35.0 LM5113SDX/NOPB WSON DPR 10 4500 367.0 367.0 35.0 LM5113TME/NOPB DSBGA YFX 12 250 210.0 185.0 35.0 LM5113TMX/NOPB DSBGA YFX 12 3000 210.0 185.0 35.0 Pack Materials-Page 2 MECHANICAL DATA YFX0012xxx D 0.600 0.075 E TOP SIDE OF PACKAGE BOTTOM SIDE OF PACKAGE TMP12XXX (Rev A) D: Max = 1.905 mm, Min =1.845 mm E: Max = 1.756 mm, Min =1.695 mm 4215094/A NOTES: A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. www.ti.com 12/12 MECHANICAL DATA DPR0010A SDC10A (Rev A) www.ti.com IMPORTANT NOTICE AND DISCLAIMER TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES "AS IS" AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with TI products. 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