Plastic-Encapsulate Transistors
NPN Silicon
1.FR-5=1.0 x 0.75 x 0.062 in
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Unit
Vdc
Vdc
Vdc
mAdc
600
Rating
Total Device Dissipation FR-5 Board
TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
Symbol Max
833
-55 to +150
Unit
mW
C/W
C
THERMAL CHARACTERISTICS
MMBT2222AT=1P
DEVICE MARKING
Characteristics Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
40
75
6.0
0.1
-
-
-
-
-
0.1
Vdc
Vdc
Vdc
nAdc
nAdc
OFF CHARACTERISTICS
MMBT2222AT
1
2
3
BASE
COLLECTOR
EMITTER
WEITRON
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θ
Value
40
75
6.0
150
(2)
(1)
2. Pulse Test:Pulse Width=300 us, Duty Cycle 2.0%
SOT-523(SC-75)
12
3
(VCB= 70 Vdc, IE=0)
(VEB= 3 Vdc, IC=0)
<_
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (1)
Output Capacitance
fT
--
-
-
-
-
-
-
-
-
-
-
8
300
pF
DC Current Gain
Collector-Emitter Saturation Voltage
(I = 500 mAdc, I = 50mAdc)
Base-Emitter Saturation Voltage
(I = 500 mAdc, I = 50mAdc)
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(Ta=25 C unless otherwise noted) (Countinued)
MMBT2222AT
35
50
75
100
40
0.3
-
-
-
-
-
-
-
-
-
-
ELECTRICAL CHARACTERISTICS
(Ta=25 C unless otherwise noted) (Countinued)
Characteristics Symbol UnitMin Max
Characteristics Symbol UnitMin Max
Typ
SWITCHING CHARACTERISTICS
(V = 30 Vdc, I = 150 mAdc,
I = 15 mAdc)
(V = 30 Vdc, I = 150 mAdc,
td
tr
ts
tf
-
-
-
-
ns
225
60
10
25
WEITRON
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(1)
(3)
(3)
I =I = 15 mAdc)
Storage Time
Delay Time
Rise Time
(I = 0.1 mAdc, V = 10 Vdc)
(I = 1.0 mAdc, V = 10 Vdc)
(I = 10 mAdc, V = 10 Vdc)
(I = 150 mAdc, V = 10 Vdc)
(I = 500 mAdc, V = 10 Vdc)
(I = 150 mAdc, I = 15mAdc)
(I = 150 mAdc, I = 15mAdc)
1
1.2
2
(I = 20 mAdc, V =20 Vdc, f=100 MHz)
C
C
C
C
C
CB
B
B
B
CE
CB
C
C
C
CC
CC
B1
B2
B1
C
E
C
C
CE
CE
CE
CE
CE
(V = 10 Vdc, I =0, f=1.0 MHz) Cob
MHz
Fall Time
MMBT2222AT
WEITRON
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FIG.1 Power Derating Curve
FIG.3 Typical Capacitance
FIG.5 Collector Emitter Saturation Voltage FIG.6 Base Emitter Voltage
vs. Collector Current
FIG.4 Typical Collector Saturation Region
FIG.2 Typical DC Current Gain vs
P ,POWER DISSIPATION(mW)
CAPACITANCE( F)
V ,COLLECTOR TO EMITTER
SATURATION VOLTAGE(VOLTS)
T ,AMBIENT TEMPERATURE( C)
REVERSE VOLTS(V) I ,BASE CURRENT(mA)
I ,COLLECTOR CURRENT(mA)
00
30
100 200 0.1
110 100 1000 1
0.1 10 100
d
p
a
DC CURRENT GAIN : h
V ,COLLECTOR-EMITTER VOLTAGE
V ,BASE EMITTER VOLTAGE
(VOLTS) (VOLTS) FE
50
100
150
200
250
C
B
I ,COLLECTOR CURRENT(mA)
CI ,COLLECTOR CURRENT(mA)
C
CE
BE(ON)
CE(sat)
1
110
10
100
100
1000
1000
Collector Current
(see Note 1) T =125 C
a
T =-25 C
Cibo
Cobo
I /I =10
a
T =150 C
a
T =-50 C
a
T =25 C
a
T =150 C
a
T =50 C
a
T =50 C
a
T =25 C
a
V =1.0V
CE
V =5V
CE
1 =1mA
C
CB
1 =30mA
C
1 =100mA
C
1 =300mA
C
1 =10mA
C
20
10
5.0
1.0
0.1
0
1.0 10 0
50
0.2
0.2
0.3
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.001 0.01 0.1 1 10 100
0.1
0.2
0.3
0.4
0.5
0.4
0.5
0.6
0.7
0.8
0.9
1.0
vs. Collector Current
MMBT2222AT
WEITRON
http://www.weitron.com.tw
FIG.7 Gain Bandwidth Product
f ,GAIN BAND WIDTH PRODUCT(MHz)
I ,COLLECTOR CURRENT(mA)
100
1000
11 10 100
10
T
a
V =5V
CE
vs. Collector Current
MMBT2222AT
SOT-523 Outline Dimensions (SC-75) Unit:mm
WEITRON
http://www.weitron.com.tw
A
B
D
EG
M
L
H
J
TOP V IE W
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
0.70
1.45
-
0.15
0.80
1.40
0.00
0.70
0.37
0.10
Max
0.50
0.90
1.75
0.50
0.40
1.00
1.80
0.10
1.00
0.48
0.25
K
C
SC-75
