IRF840I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ease of Paralleling D Fast Switching Characteristic Simple Drive Requirement BVDSS 500V RDS(ON) 0.85 ID G 8A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable G D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, V GS @ 10V 8 A ID@TC=100 Continuous Drain Current, V GS @ 10V 5.1 A 32 A 35 W 320 mJ 8 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Unit 3.6 /W 65 /W 201024071-1/4 IRF840I o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Min. Typ. VGS=0V, ID=1mA 500 - - V VGS=10V, ID=4.8A - - 0.85 VDS=VGS, ID=250uA 2 - 4 V VDS=10V, ID=4.8A - 4.2 - S VDS=500V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=125 C) VDS=400V, VGS=0V - - 250 uA Gate-Source Leakage VGS=20V - - 100 nA ID=8A - 45 72 nC Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS o Drain-Source Leakage Current (Tj=25 C) o IGSS 3 3 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=400V - 7 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 25 - nC 3 td(on) Turn-on Delay Time VDD=250V - 12 - ns tr Rise Time ID=8A - 31 - ns td(off) Turn-off Delay Time RG=9.1,VGS=10V - 48 - ns tf Fall Time RD=31 - 33 - ns Ciss Input Capacitance VGS=0V - 1250 2000 pF Coss Output Capacitance VDS=25V - 270 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Min. Typ. Max. Units Tj=25, IS=8A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions trr Reverse Recovery Time IS=8A, VGS=0V, - 515 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 8.6 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25 3.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 IRF840I 16 8 10V 7.0V ID , Drain Current (A) 12 6.0V 8 10V 7 .0V 6 .0V T C =150 o C ID , Drain Current (A) o T C =25 C 6 5 .0 V 4 V G = 4. 5 V 2 4 5.0V V G =4.5V 0 0 0 4 8 12 16 20 0 24 V DS , Drain-to-Source Voltage (V) 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 1.1 Normalized RDS(ON) Normalized BVDSS (V) I D =4.8A V G =10V 1 2 1 0.9 0 0.8 -50 0 50 100 -50 150 o T j , Junction Temperature ( C) 0 50 100 150 T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.4 8 1.2 T j = 150 o C Normalized VGS(th) (V) 10 T j = 25 o C IS (A) 6 4 1 0.8 0.6 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 IRF840I f=1.0MHz 10000 12 I D =8A V DS =100V V DS =250V V DS =400V 8 C iss 1000 C (pF) VGS , Gate to Source Voltage (V) 10 6 4 C oss C rss 100 2 0 10 0 10 20 30 40 50 60 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 100us 1ms 10ms 1 100m 1s o 0.1 T c =25 C Single Pulse DC Normalized Thermal Response (Rthjc) 1 10 ID (A) 9 V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 0.01 1 10 100 1000 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E A Millimeters SYMBOLS c2 L4 MIN NOM MAX A 4.50 4.70 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30 2.60 2.90 E 9.70 10.00 10.40 L3 2.91 3.41 L4 14.70 15.40 16.10 e L3 b1 A1 b c ---- 3.20 ---- ---- 2.54 ---- 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220CFM r Part Number LOGO IRF840I YWWSSS 3.91 Package Code Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence