LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon MMBT3904LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage V CBO 60 Vdc Emitter-Base Voltage V EBO 6.0 Vdc 200 mAdc Collector Current -- Continuous IC CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RJA PD 1.8 556 300 mW/C C/W mW RJA TJ , Tstg 2.4 417 -55 to +150 mW/C C/W C DEVICE MARKING MMBT3904LT1 = 1AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) V (BR)CEO 40 -- Vdc (I C = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage V (BR)CBO 60 -- Vdc V (BR)EBO 6.0 -- Vdc Base Cutoff Current I BL -- 50 nAdc ( V CE= 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Current I CEX -- 50 nAdc OFF CHARACTERISTICS (I C = 10 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) ( V CE = 30Vdc, I EB = 3.0Vdc ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. O11-1/6 LESHAN RADIO COMPANY, LTD. MMBT3904LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 40 70 100 60 30 -- -- 300 -- -- -- -- 0.2 0.3 0.65 -- 0.85 0.95 fT 300 -- MHz C obo -- 4.0 pF C ibo -- 8.0 pF h ie 1.0 10 pF h re 0.5 8.0 X10 -4 h fe 100 400 -- h oe 1.0 40 mhos NF -- 5.0 dB td tr ts tf -- -- -- -- 35 35 200 50 ON CHARACTERISTICS (3) DC Current Gain(1) (I C =0.1 mAdc, V CE =1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50mAdc, V CE = 1.0Vdc) (I C = 100mAdc, V CE =1.0 Vdc) Collector-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc)(3) (I C = 50 mAdc, I B = 5.0mAdc) Base-Emitter Saturation Voltage(3) (I C = 10 mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc ) hFE -- VCE(sat) Vdc V BE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance (V CB = 5.0Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5Vdc, I C = 0, f = 1.0 MHz) Input Impedancen (V CE = 10Vdc, I C = 1.0mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small-Signal Current Gain (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Noise Figure (V CE = 5.0 Vdc, I C = 100Adc, R S = 1.0 k , f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 3.0 Vdc,V BE = -0.5Vdc I C = 10 mAdc, I B1 = 1.0mAdc) (V CC = 3.0Vdc, I C = 10 mAdc,I B1 = I B2 = 10 mAdc) ns ns 3. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. O11-2/6 LESHAN RADIO COMPANY, LTD. MMBT3904LT1 +3 V +3 V 10 < t 1 < 500 s t1 DUTY CYCLE = 2% 300 ns 275 +10.9 V +10.9 V DUTY CYCLE = 2% 275 10 k 10 k 0 -0.5 V C S < 4 pF* C S < 4 pF* 1N916 < 1 ns -9.1 < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = 25C T J = 125C 5000 10 V CC = 40 V I C /I B = 10 3000 7.0 Q, CHARGE (pC) CAPACITANCE (pF) 2000 5.0 C ibo 3.0 2.0 1.0 0.1 C obo 1000 700 500 QT 300 200 QA 100 70 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 200 O11-3/6 LESHAN RADIO COMPANY, LTD. MMBT3904LT1 500 500 I C /I B = 10 300 200 V CC = 40 V 100 70 t r, RISE TIME (ns) 300 200 t r @ V CC = 3.0 V TIME (ns) 50 30 20 40 V 15 V 10 7 5 2.0 V t d @ V OB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time 500 200 500 t 's = t s -1 /8 tf 300 200 I C /I B =20 I C /I B =10 V CC = 40 V I B1 = I B2 300 200 I B1 = I B2 I C /I B = 20 100 70 50 t f, , FALL TIME (ns) t 's , STORAGE TIME (ns) I C /I B = 10 I C /I B =20 I C /I B =10 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 100 70 50 30 20 I C /I B = 10 10 7 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE = 5.0 Vdc, T A = 25C, Bandwidth = 1.0 Hz) 14 12 f = 1.0 kHz SOURCE RESISTANCE=200 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 12 I C = 1.0 mA 10 SOURCE RESISTANCE =200 8 I C = 0.5 mA 6 SOURCE RESISTANCE =1.0k I C = 50A 4 2 SOURCE RESISTANCE=500 I C = 100 A 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 I C = 1.0 mA I C = 0.5 mA 10 I C = 50 A 8 I C = 100 A 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 f, FREQUENCY (kHz) R S , SOURCE RESISTANCE (k) Figure 9. Figure 10. 100 O11-4/6 LESHAN RADIO COMPANY, LTD. MMBT3904LT1 h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25C) hfe, CURRENT 200 100 70 50 30 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 hie, INPUT IMPEDANCE (k) 20 10 5 2 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Output Admittance 20 10 5.0 2.0 1.0 0.5 0.2 0.1 50 h re, VOLTAGE FEEDBACK RATIO (X 10-4 ) 0.1 hoe, OUTPUT ADMITTANCE ( mhos) 100 300 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio 10 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 T J = +125C 1.0 V CE = 1.0 V +25C 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain O11-5/6 LESHAN RADIO COMPANY, LTD. V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3904LT1 1.0 T J = 25C 0.8 I C = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 T J = 25C V BE(sat) @ I C /I B =10 1.0 0.5 +25C TO +125C COEFFICIENT(mV/C) V, VOLTAGE (VOLTS) VC FOR V CE(sat) 0.8 V BE @ V CE =1.0 V 0.6 0.4 V CE(sat) @ I C /I B =10 0.2 0 1.0 0 -55C TO +25C -0.5 +25C TO +125C -1.0 -55C TO +25C -1.5 VB FOR V BE(sat) -2.0 2.0 3.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients 200 O11-6/6