MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N7002W Features * * * * * Low ON-Resistance Low Input Capacitance Low Gate Threshold Voltage Fast Switching Speed Low Input/Output Leakage N-Channel Enhancement Mode Field Effect Transistor Mechanical Data * * * * SOT-323 A Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Code: K72 D D B G Maximum Ratings * * * F Operating Temperature: -55C to +150C Storage Temperature: -55C to +150C Maximum Thermal Resistance; 625K/W Junction To Ambient C S E H G J K Parameter Symbol Value Unit VDSS 60 V RGS1.0M VDGR 60 V Continuous Pulsed VGSS 20 40 V ID 115 73 800 Drain-Source-Voltage Drain-Gate Voltage Gate-Source-Voltage Drain Current (Note 1) Continuous Continuous @ 100 Pulsed DIMENSIONS DIM A B C D E F G H J K INCHES MIN MAX .071 .087 .045 .053 .079 .087 .026 Nominal .047 .055 .012 .016 .000 .004 .035 .039 .004 .010 .012 .016 MM MIN MAX 1.80 2.20 1.15 1.35 2.00 2.20 0.65Nominal 1.20 1.40 .30 .40 .000 .100 .90 1.00 .100 .250 .30 .40 NOTE Suggested Solder Pad Layout mA 0.70 0.90 Total Power Dissipation (Note 1) Derating above TA = 25 PD 200 1.60 mW mW/ Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width 300s, duty cycle 2% 1.90 0.65 0.65 www.mccsemi.com Revision: 2 2003/04/30 MCC 2N7002W Electrical Characteristics @ TA = 25 C unless otherwise specified Characteristic Symbol Min Typ BVDSS 60 70 Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25C @ TC = 125C Gate-Body Leakage V VGS = 0V, ID = 10 A IDSS 1.0 500 A VDS = 60V, VGS = 0V IGSS 10 nA VGS = 20V, VDS = 0V 2.0 V VDS = VGS, ID =-250 A 7.5 13.5 W VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A A VGS = 10V, VDS = 7.5V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance @ Tj = 25C @ Tj = 125C 1.0 3.2 4.4 RDS (ON) ID(ON) 0.5 gFS 80 1.0 mS VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss 22 50 pF Output Capacitance Coss 11 25 pF Reverse Transfer Capacitance Crss 2.0 5.0 pF Turn-On Delay Time tD(ON) 7.0 20 ns Turn-Off Delay Time tD(OFF) 11 20 ns VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150 , VGEN = 10V, RGEN = 25 Note: 1. Valid provided that terminals are kept at specified ambient temperature. 2. Pulse width 300ms, duty cycle 2%. www.mccsemi.com Revision: 2 2003/04/30 MCC 2N7002W 0.8 ID, DRAIN-SOURCE CURRENT (A) 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.6 Tj = 25C RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.0 5.5V 5.0V 0.4 0.2 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 0 1 3 2 0 5 4 0.6 0.8 1.0 6 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.4 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics VGS = 10V, ID = 0.5A VGS = 5.0V, ID = 0.05A 1.0 0.5 0 0.2 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature 5 4 ID = 500mA ID = 50mA 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage www.mccsemi.com Revision: 2 2003/04/30