©2017 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5086, REV. A.3
VF Controlled Diodes
Qualified per MIL-PRF-19500/241
All ratings are at TA = 25oC unless otherwise specified.
AV AILABL E AS
1N, JAN, JANTX, JANTXV
JANS
ELECTRICAL CHARACTERISTICS:
RATING
CONDITIONS
MIN
TYP
MAX
UNIT
Working Peak Reverse Voltage (VRWM)
125
-
-
V (pk)
Average Rectified Output Current (Io)
TA = 750C
-
-
150
mA dc
Surge Peak Forward Current (IFSM) @
TA=25oC
tp = 1s
-
-
500
mA (pk)
Thermal Resistance (RθJL)
L=.375 in
-
-
250
oC/W
Thermal Resistance (RθJC)
L=0
-
-
40
oC/W
Thermal Resistance (RθJX)
245
oC/W
Junction Temperature (TJ)
-
-65
-
+175
C
Storage Temp. (Tstg)
-
-65
-
+175
C
1N3595-1, 1N3595US
Standard
V
VF
F
C
CO
ON
NT
TR
RO
OL
LL
LE
ED
D
D
DI
IO
OD
DE
E
DESCRIPTION:
This voidless hermetically sealed Vf controlled diode is military qualified per MIL-PRF-19500/241
and is targeted for space, commercial and military aircraft, military vehicles, shipboard markets
and all high reliability applications.
FEATURES / BENEFITS:
Hermetic, non-cavity glass package
Category I Metallurgically bonded
All devices are 100% hot solder dipped
JAN/ JANTX/ JANTXV available per MIL-PRF-
19500/241
MAXIMUM RATINGS:
Operating and Storage Temperature: -65oC to
+175oC
Forward Voltage (max): 1Vdc @ 200mA,
.92Vdc @ 100mA
Reverse Leakage Current (max): 1 nAdc @ VR
©2017 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5086, REV. A.3
CHARACTERISTIC
CONDITIONS
MIN
TYP
MAX
UNIT
Forward Voltage
VF1 at IF1 = 200 mA dc
VF2 at IF2 = 100 mA dc
VF3 at IF3 = 50 mA dc
VF4 at IF4 = 10 mA dc
VF5 at IF5 = 5 mA dc
VF6 at IF6 = 1 mA dc
0.83
0.79
0.74
0.65
0.60
0.52
-
1.0
0.92
0.88
0.80
0.765
0.70
V
Maximum Reverse
Leakage Current
IRM1 @ VRWM
IRM2 @ VRWM. TA = 150 °C
-
-
1
3
nA dc
µA
Breakdown Voltage (BVR)
IR = 100µA, T A = -55 °C
150
-
-
V
Junction Capacitance (CJ)
VR = 0Vdc, f = 1MHz
-
-
8.0
pF
PACKAGE DIMENSIONS (inches/mm)
AXIAL MELF (Add “US”)
PART ORDERING INFORMATION:
1N3595-1
1N3595US
PACKAGE
DIMENSIONS - INCHES ( MILLIMETERS)
PACKAGE
DIMENSIONS - INCHES ( MILLIMETERS)
STYLE
B
D
G
L
STYLE
BL
BD
S
ECT
DO-35
.018/.022
0.46/0.56
.056/.075
1.42/1.91
.140/.180
3.56/4.57
1.00/1.5
25.4/38.10
D-5D
.165/.195
4.19/4.95
.070/.085
1.78/2.16
0.003
Min
.019/.028
0.48/0.71
The following part numbers can be purchased in either axial or surface mount devices and screened and tested to the
military screening flow. The parts are marked in accordance with the testing performed, example:
Sensitron Screening Level
*Part Number--
Leaded Package
(example for 1N3595-1)
*Part Number--
Surface Mount Package
(example for 1N3595US)
1N
1N3595-1
1N3595US
JAN
JAN1N3595-1
JAN1N3595US
JANTX
JANTX1N3595-1
JANTX1N3595US
JANTXV
JANTXV1N3595-1
JANTXV1N3595US
JANS
JANS1N3595-1
JANS1N3595US
*Parts can also be ordered Tape & Reel
*Sensitron space equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting
from wafer fabrication through assembly and testing using our internal specification.
1N3595-1, 1N3595US
Standard
V
VF
F
C
CO
ON
NT
TR
RO
OL
LL
LE
ED
D
D
DI
IO
OD
DE
E
©2017 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com
SENSITRON
SENSITRON _
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5086, REV. A.3
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
1N3595-1, 1N3595US
Standard
V
VF
F
C
CO
ON
NT
TR
RO
OL
LL
LE
ED
D
D
DI
IO
OD
DE
E