LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N-Channel SOT-23 3 * Pb-Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc Drain Current - Continuous TC = 25C (Note 1.) - Continuous TC = 100C (Note 1.) - Pulsed (Note 2.) ID ID 115 75 800 mAdc Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) IDM VGS VGSM 20 40 Vdc Vpk Symbol Max Unit PD 225 1.8 mW mW/C CASE 318, STYLE 21 SOT- 23 (TO-236AB) 115 mAMPS 60 VOLTS R DS(on) = 7.5 W N - Channel 3 THERMAL CHARACTERISTICS Characteristic 1 Total Device Dissipation FR-5 Board (Note 3.) TA = 25C Derate above 25C 2 Thermal Resistance, Junction to Ambient RJA 556 C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25C Derate above 25C PD 300 mW mW/C Thermal Resistance, Junction to Ambient RJA 417 C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature MARKING DIAGRAM & PIN ASSIGNMENT Drain 2.4 3 702 W 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 2 Gate Source 702 W = Device Code = Work Week ORDERING INFORMATION Device L2N7002LT1 L2N7002LT1G Marking Shipping 702 3000 Tape & Reel 702(Pb-Free) 3000 Tape & Reel L2N7002LT1-1/3 LESHAN RADIO COMPANY, LTD. L2N7002LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 60 - - Vdc IDSS - - - - 1.0 500 Adc Gate-Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGS = -20 Vdc) IGSSR - - -100 nAdc VGS(th) 1.0 1.6 2.5 Vdc ID(on) 500 - - mA - - - - 3.75 0.375 - - - - 1.4 - 1.8 - 7.5 13.5 7.5 13.5 gFS 80 - - mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 17 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss - 10 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss - 2.5 5.0 pF td(on) - 7 20 ns td(off) - 11 40 ns VSD - - -1.5 Vdc IS - - -115 mAdc ISM - - -800 mAdc OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25C TJ = 125C ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) On-State Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) Static Drain-Source On-State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) Static Drain-Source On-State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25C TC = 125C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25C TC = 125C rDS(on) Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc) Vdc Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2.) Turn-On Delay Time Turn-Off Delay Time (V DD = 25 Vdc , ID ^ 500 mAdc, RG = 25 , RL = 50 , Vgen = 10 V) BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. L2N7002LT1-2/3 LESHAN RADIO COMPANY, LTD. L2N7002LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25C 1.6 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0.8 VGS = 10 V I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 125C 0.6 0.4 0.2 10 0 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25C -55C +100 Figure 3. Temperature versus Static Drain-Source On-Resistance +140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 Figure 4. Temperature versus Gate Threshold Voltage L2N7002LT1-3/3