Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 4 1Publication Order Number:
MMBT5550LT1/D
MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
•Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol 5550 5551 Unit
Collector−Emitter Voltage VCEO 140 160 Vdc
Collector−Base Voltage VCBO 160 180 Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC600 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate Above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
MMBT5550LT1 SOT−23 3000 Tape & Reel
MMBT5551LT1 SOT−23
SOT−23 (TO−236)
CASE 318
STYLE 6
3000 Tape & Reel
MARKING
DIAGRAM
xxx = MMBT550LT1 = M1F,
MMBT5551LT1, LT3, LT1G = G1
M = Month Code
COLLECTOR
3
1
BASE
2
EMITTER
xxxM
MMBT5551LT3G SOT−23
(Pb−Free) 10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT5551LT1G SOT−23
(Pb−Free) 3000 Tape & Reel
MMBT5551LT3 SOT−23 10,000 Tape & Reel
MMBT5550LT1G SOT−23
(Pb−Free) 3000 Tape & Reel
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MMBT5550LT1, MMBT5551LT1
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0) MMBT5550
MMBT5551
V(BR)CEO 140
160 −
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 Adc, IE = 0) MMBT5550
MMBT5551
V(BR)CBO 160
180 −
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 Adc, IC = 0) V(BR)EBO 6.0 − Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0) MMBT5550
(VCB = 120 Vdc, IE = 0) MMBT5551
(VCB = 100 Vdc, IE = 0, TA = 100°C) MMBT5550
(VCB = 120 Vdc, IE = 0, TA = 100°C) MMBT5551
ICBO −
−
−
−
100
50
100
50
nAdc
Adc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0) IEBO − 50 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5550
MMBT5551
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5550
MMBT5551
(IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550
MMBT5551
hFE 60
80
60
80
20
30
−
−
250
250
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550
MMBT5551
VCE(sat) −
−
−
0.15
0.25
0.20
Vdc
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) Both Types
(IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550
MMBT5551
VBE(sat) −
−
−
1.0
1.2
1.0
Vdc
Collector Emitter Cut−off
(VCB = 10 V) Both Types
(VCB = 75 V)
ICES −
−50
100
nA
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
MMBT5550LT1, MMBT5551LT1
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3
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
500
h , DC CURRENT GAIN
FE
TJ = 125°C
−55 °C
25°C
5.0
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
200
30
20
300
100
50
7.0
VCE = 1.0 V
VCE = 5.0 V
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
IC = 1.0 mA
0
0.3
0.005 0.01 0.2 0.5 1.0 2.0 20 50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02 0.05 0.1 10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.1
10 mA 30 mA 100 mA
5.0
Figure 3. Collector Cut−Off Region
VBE, BASE−EMITTER VOLTAGE (VOLTS)
101
10−5
0.4 0.3 0.1
100
10−1
10−2
10−3
10−4
0.2 0 0.1 0.2 0.40.3 0.60.5
VCE = 30 V
TJ = 125°C
75°C
25°C
IC = ICES
, COLLECTOR CURRENT (A)µIC
REVERSE FORWARD
IC, COLLECTOR CURRENT (mA)
1.0
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50 100
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0.1 0.2 0.5
Figure 4. “On” Voltages
0.8
0.6
0.4
0.2
0
3.0 30
0.3
MMBT5550LT1, MMBT5551LT1
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4
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
0.2 0.5 1.0 2.0 5.0 10 20
Cibo
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3 0.7 3.0 7.0
Cobo
10.2 V
Vin
10 s
INPUT PULSE
VBB
−8.8 V
100
RB
5.1 k
0.25 F
Vin 100 1N914
Vout
RC
VCC
30 V
3.0 k
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
1000
0.3 1.0 10 20 30 50
0.50.2
t, TIME (ns)
10
20
30
50
100
200
300
500
2.0 100 200
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
3.0 5.0
tr @ VCC = 30 V
td @ VEB(off) = 1.0 V
VCC = 120 V
IC, COLLECTOR CURRENT (mA)
5000
t, TIME (ns)
50
100
200
300
500
3000
2000
1000
0.3 1.0 10 20 30 50
0.50.2 2.0 100 200
3.0 5.0
IC/IB = 10
TJ = 25°C
tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
IC, COLLECTOR CURRENT (mA)
2.5
VC for VCE(sat)
VB for VBE(sat)
Figure 5. Temperature Coefficients
TJ = − 55°C to +135°C
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
2.0
1.5
1.0
0.5
0
− 0.5
− 1.0
− 1.5
− 2.0
− 2.5
1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances Figure 8. Turn−On Time
Figure 9. Turn−Off Time
MMBT5550LT1, MMBT5551LT1
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PACKAGE DIMENSIONS
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT−23−3 (TO−236)
CASE 318−08
ISSUE AK
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
DJ
K
L
A
C
BS
H
GV
3
12
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
MMBT5550LT1, MMBT5551LT1
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MMBT5550LT1/D
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