1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
2N7002KA
N-channel TrenchMOS FET
Rev. 02 — 25 September 2007 Product data sheet
nLogic level compatible nVery fast switching
nSubminiature surface-mounted package nGate-source ESD protection diodes
nRelay driver nHigh-speed line driver
nVDS ≤60 V nID≤300 mA
nRDSon ≤4.4 ΩnPtot ≤0.83 W
Table 1. Pinning
Pin Description Simplified outline Symbol
1 gate (G)
SOT23 (TO-236AB)
2 source (S)
3 drain (D)
12
3
G
D
S
003aac036
2N7002KA_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 25 September 2007 2 of 11
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
3. Ordering information
4. Limiting values
Table 2. Ordering information
Type number Package
Name Description Version
2N7002KA TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 °C≤Tj≤150 °C - 60 V
VDGR drain-gate voltage (DC) 25 °C≤Tj≤150 °C; RGS =20kΩ-60V
VGS gate-source voltage - ±15 V
VGSM peak gate-source voltage tp≤50 µs; pulsed; duty cycle = 25 % - ±40 V
IDdrain current Tsp =25°C; VGS = 10 V; see Figure 2 and 3- 320 mA
Tsp = 100 °C; VGS = 10 V; see Figure 2 - 200 mA
IDM peak drain current Tsp =25°C; pulsed; tp≤10 µs; see Figure 3 - 1.28 A
Ptot total power dissipation Tsp =25°C; see Figure 1 - 0.83 W
Tstg storage temperature −55 +150 °C
Tjjunction temperature −55 +150 °C
Source-drain diode
ISsource current Tsp =25°C - 300 mA
ISM peak source current Tsp =25°C; pulsed; tp≤10 µs - 1.2 A
2N7002KA_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 25 September 2007 3 of 11
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
Fig 1. Normalized total power dissipation as a
function of solder point temperature Fig 2. Normalized continuous drain current as a
function of solder point temperature
Tsp =25°C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Tsp (°C)
0 20015050 100
003aab946
40
80
120
Pder
(%)
0
Tsp (°C)
0 20015050 100
003aac033
40
80
120
Ider
( %)
0
Pder Ptot
Ptot 25°C()
------------------------100 %×=Ider ID
ID25°C()
-------------------- 100 %×=
003aab788
10
-2
10
-1
1
10
1 10 10
2
V
DS
(V)
I
D
(A)
DC 100 ms
10 ms
Lim it R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 µs
100 µs
2N7002KA_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 25 September 2007 4 of 11
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
5. Thermal characteristics
[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air.
Table 4. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to solder point see Figure 4 - - 150 K/W
Rth(j-a) thermal resistance from junction to ambient [1] - 350 - K/W
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
003aab351
1
10
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
t
p
(s)
Z
th(j-sp)
(K/W)
single pulse
0.2
0.1
0.05
δ = 0.5
0.02
tpT
P
t
tp
T
δ =
2N7002KA_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 25 September 2007 5 of 11
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
6. Characteristics
Table 5. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage ID=10µA; VGS =0V
Tj=25°C 6075- V
Tj=−55 °C 55--V
V(BR)GSS gate-source breakdown
voltage IG=±1 mA; VDS = 0 V 16 22 - V
VGS(th) gate-source threshold voltage ID= 1 mA; VDS =V
GS; see Figure 9 and 10
Tj=25°C 12- V
Tj= 150 °C 0.6 - - V
Tj=−55 °C - - 3.5 V
IDSS drain leakage current VDS =48V; V
GS =0V
Tj=25°C - 0.01 1 µA
Tj= 150 °C --10µA
IGSS gate leakage current VGS =±10 V; VDS = 0 V - 50 500 nA
RDSon drain-source on-state
resistance VGS = 10 V; ID= 500 mA; see Figure 6 and 8
Tj=25°C - 2.8 4.4 Ω
Tj= 150 °C - - 8.14 Ω
VGS = 4.5 V; ID= 75 mA; see Figure 6 and 8- 3.8 5.3 Ω
Dynamic characteristics
Ciss input capacitance VGS =0V; V
DS = 10 V; f = 1 MHz;
see Figure 12 - 1340pF
Coss output capacitance - 8 30 pF
Crss reverse transfer capacitance - 4 10 pF
ton turn-on time VDS =50V; R
L= 250 Ω; VGS =10V;
RG=50Ω; RGS =50Ω- 3 10 ns
toff turn-off time - 9 15 ns
Source-drain diode
VSD source-drain voltage IS= 300 mA; VGS = 0 V; see Figure 11 - 0.85 1.5 V
trr reverse recovery time IS= 300 mA; dIS/dt = −100 A/µs; VGS =0V;
VDS =25V -30-ns
Qrrecovered charge - 30 - nC
2N7002KA_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 25 September 2007 6 of 11
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
Tj=25°CT
j=25°C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
Tj=25°C and 150 °C; VDS >I
D×RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aab352
0
0.2
0.4
0.6
0.8
1
01234
V
DS
(V)
I
D
(A)
10 5
4.5
4
3.5V
GS
(V) =
003aab353
0
2000
4000
6000
8000
10000
0 0.2 0.4 0.6 0.8 1
I
D
(A)
R
DSon
(mΩ)
4
5
4.5
10
V
GS
(V) =
003aab354
0
0.2
0.4
0.6
0.8
1
0246
V
GS
(V)
I
D
(A)
T
j
= 150 °C25 °C
Tj (°C)
−60 180120060
003aac034
1.2
0.6
1.8
2.4
a
0
aRDSon
RDSon 25°C()
------------------------------
=
2N7002KA_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 25 September 2007 7 of 11
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
ID= 1 mA; VDS =V
GS Tj=25°C; VDS =5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Tj=25°C and 150 °C; VGS =0V V
GS = 0 V; f = 1 MHz
Fig 11. Source current as a function of source-drain
voltage; typical values Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aab101
0
1
2
3
-60 0 60 120 180
Tj (°C)
VGS(th)
(V)
min
typ
max
003aab100
10-6
10-5
10-4
10-3
0123
VGS (V)
ID
(A)
min typ max
003aab356
0
0.2
0.4
0.6
0.8
1
0.2 0.4 0.6 0.8 1
V
SD
(V)
I
S
(A)
T
j
= 25 °C
150 °C
003aac035
VDS (V)
10−1102
101
10
102
C
(pF)
1
Ciss
Coss
Crss
2N7002KA_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 25 September 2007 8 of 11
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
7. Package outline
Fig 13. Package outline SOT23 (TO-236AB)
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
2N7002KA_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 25 September 2007 9 of 11
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
8. Revision history
Table 6. Revision history
Document ID Release date Data sheet status Change notice Supersedes
2N7002KA_2 20070925 Product data sheet 2N7002KA_1
Modifications: •The Symbol graphic in Table 1 was updated.
2N7002KA_1 20070605 Product data sheet - -
2N7002KA_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 25 September 2007 10 of 11
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
9. Legal information
9.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors 2N7002KA
N-channel TrenchMOS FET
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 September 2007
Document identifier: 2N7002KA_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Contact information. . . . . . . . . . . . . . . . . . . . . 10
11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
