2N7002W
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-323
Features
• Case: SOT-323, Molded Plastic
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking: K72
Maximum Ratings
• Operating Temperature: -55°Cto+150°C
• Storage Temperature: -55°Cto+150°C
• Maximum Thermal Resistance; 625K/W Junction To Ambient
Parameter Symbol Value Unit
Drain-Source-Voltage VDSS 60 V
Drain-Gate Voltage RGS1.0MΩVDGR 60 V
Gate-Source-Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Continuous @ 100
Pulsed ID
115
73
800 mA
Total Power Dissipation (Note 1)
Derating above TA=25PD200
1.60 mW
mW/
Note: 1. Valid provided that terminals are kept at specified ambient
temperature.
2. Pulse width 300µs, duty cycle 2%
r
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .079 .087 2.00 2.20
D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000 .004 .000 .100
H .035 .039 .90 1.00
J .004 .010 .100 .250
K .012 .016 .30 .40
A
C
B
D
E
F
GH
J
1.90
0
.7
0
0.90
0
.
65
0.65
DIMENSIONS
S
G
D
K
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: A 2011/01/01
TM
Micro Commercial Components
Suggested Solder
Pad Layout
• Low ON-Resistance
• Low Input Capacitance
• Low Gate Threshold Voltage
• Fast Switching Speed
• Low Input/Output Leakage
Mechanical Data
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• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Electrical Characteristics @ TA= 25 C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID= 10 A
Zero Gate Voltage Drain Current @ TC= 25°C
@ TC= 125°C IDSS 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 1.0 2.0 V VDS =V
GS, ID=-250 A
On-State Drain Current ID(ON) 0.5 1.0 A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 mS VDS =10V, ID= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss 11 25 pF
Reverse Transfer Capacitance Crss 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 7.0 20 ns VDD = 30V, ID= 0.2A,
RL= 150 , VGEN = 10V,
RGEN = 25
Turn-Off Delay Time tD(OFF) 11 20 ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width 300s, duty cycle 2%.
Static Drain-Source On-Resistance @ Tj= 25°C
@T
j= 125°C RDS (ON) 3.2
4.4
7.5
13.5 VGS = 5.0V, ID= 0.05A
VGS = 10V, ID= 0.5A
2N7002W MCC
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 4
0
0.2
0.4
0.6
0.8
1.0
01 2 345
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fi
g
. 1 On-Re
g
ion Characteristics
DS
V = 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
GS
5.5V
5.0V
0
1
2
3
4
5
0 0.2
R,N
O
RMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
D
V = 5.0V
GS
T = 25 C
j
V = 10V
GS
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R,N
O
RMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs Junction Temperature
j
V = 10V, I
GS D = 0.5A
V = 5.0V, I
GS D = 0.05A
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
0 2 4 6 8 1012141618
R,N
O
RMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
2N7002W MCC
Revision: A 2011/01/01
TM
Micro Commercial Components
www.mccsemi.com
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MCC
Revision: A 2011/01/01
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Micro Commercial Components
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Device Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Ordering Information :
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