OPA2277UA/2K5**YK-SEED - TEXAS INSTRUMENTS

Document Number: 322844-002

Intel® Atom™ Processor D400 and

D500 Series

Datasheet- Volume One

This is volume 1 of 2. Refer to document 322845 for Volume 2

June 2010

2Datasheet

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Datasheet 3

Contents

1 Introduction .............................................................................................................8

1.1 Intel® Atom™ Processor D400 and D500 Series Features.........................................8

1.2 System Memory Featur es................ .......... .. .. ..................... .. ... ..................... .. .. .. ..9

1.3 Direct Media Interface Features...........................................................................10

1.4 Graphics Processing Unit Features .......................................................................10

1.5 Clocking...........................................................................................................11

1.6 Power Manageme nt ............. .. .. ........... .. .. .......... ... .. .......... .. .. ........... .. .. ........... .. ..11

1.6.1 Terminology ..........................................................................................11

1.7 References .......................................................................................................13

1.8 System Block Diagram......... ..................... .. .. ..................... .. ... ..................... .. .. ..14

2 Signal Description....................................................................................................15

2.1 CPU Legacy Signal.............................................................................................16

2.2 System Memory Interface............. ... ....................... ............................................19

2.3 DMI - Direct Media Interface...............................................................................21

2.4 PLL Signals................. .......... .. .. ........... .. .. ........... .. .. .......... .. ... .......... .. ........... .. ..21

2.5 Analog Display Signals .......................................................................................22

2.6 LVDS Signals....................................................................................................23

2.7 JTAG/ITP Signals...............................................................................................24

2.8 Error and Thermal Protection ..............................................................................24

2.9 Processor Core Power Signals..............................................................................25

2.10 Graphics, DMI and Memory Core Power Signals .....................................................25

2.11 Ground ............................................................................................................26

3 Functional Description.............................................................................................27

3.1 System Memory Controller .. ............. .. .................................................................27

3.1.1 System Memory Organization Modes.........................................................27

3.1.2 System Memory Technology Supported .....................................................27

3.1.3 Rules for Populating DIMM Slots...............................................................30

3.2 Graphics Processing Unit ....................................................................................30

3.2.1 3D Graphics Pipeline...............................................................................31

3.2.2 Video Engine ................... ... .. .......... .. .. ........... .. .. ........... .. .......... .. ... ........32

3.2.3 2D Engine .............................................................................................32

3.2.4 Analog Disp lay Port Characteristics ...........................................................32

3.2.5 Multiple Display Configurations.................................................................33

3.3 Thermal Sensor................. .......... ... .. .......... .. .. ........... .. .. ..................... .. .. ...........33

3.3.1 PCI Device 0, Function 0 .........................................................................33

3.4 Power Manageme nt ............. .. .. ........... .. .. .......... ... .......... .. .. ........... .. .. ........... .. .. ..34

3.4.1 Main Memory Power Management.............................................................34

3.4.2 Interface Pow er State s Sup porte d............ ... ............................................ ..35

3.4.3 State Combinations ................................................................................35

3.4.4 System Suspend State s........ .......... .. .. .. ........... .. .. ..................... .. .. ...........35

4 Electrical Specifications...........................................................................................37

4.1 Power and Ground Balls .....................................................................................37

4.2 Decoupling Guidelines.......... ..................... .. .. ..................... .. ... .. .......... .. .. ...........37

4.2.1 Voltage Rail Decoupling............ .. .. .......... ... .. .. ............................... ... .. .. ....37

4.3 Processor Clocking.............................................................................................38

4.4 Voltage Identification (VID) ................................................................................38

4Datasheet

4.5 Catastrophic Thermal Protection ..........................................................................40

4.6 Reserved or Unused Signals................................................................................40

4.7 Signal Groups ...................................................................................................41

4.8 Test Access Port (TAP) Connection........................... ....................... .....................41

4.9 Absolute Maximum and Minimum Ratings..............................................................41

4.10 DC Specifications....... .. .......... .. ... .......... .. .. ..................... .. ... .......... .. .. ........... .. .. ..43

4.10.1 Flexible Motherboard Guidelines (FMB) ......................................................43

4.10.2 Voltage and Current Spe c if ications....................................... .....................43

4.10.3 DC Specifications...... .. ........... .. .. .. ........... .. .. ..................... .. .. ...................47

5 Signal Quality Specifications....................................................................................54

6Low Power Features................................................................................................55

6.1 Low Power States ..............................................................................................55

6.1.1 Processor Core Low Power States..............................................................55

6.1.2 Processor Core C-states Description .......................................................... 57

7 Thermal Specifications and Design Considerations...................................................59

7.1 Thermal Specifications.......... .. .. ... ..................... .. .. .. ..................... .. .. .. .................59

7.1.1 Thermal Diode.............. ... .. ..................... .. .. ..................... .. .. ........... .. .. ....60

7.1.2 Intel® Therm a l Monitor............ .......... ... .. ..................... .. .. ..................... ..62

7.1.3 Digital Therma l Sensor............................ .. .. ..................... .. .. ...................64

7.1.4 Out of Specification Detection...................................................................64

7.1.5 PROCHOT# Signal Pin ................ ..................... .. .. ..................... ... .. ..........65

8 Package Mechanical Specifications and Ball Information..........................................66

8.1 Package Mechanical Specifications .......................................................................66

8.1.1 Package Mechanical Drawings...................................................................66

8.1.2 Package Loading Specifications.................................................................67

8.2 Processor Ballout Assignment..............................................................................67

9 Debug Tool Specifications ........................................................................................79

10 Testability ...............................................................................................................80

10.1 JTAG Boundary Scan..........................................................................................80

Datasheet 5

Figures

Figure 1-1 Intel Atom Processor D400 and D500 Series System Block Diagram.......... .. ..14

Figure 4-2 VCC Tolerance Band ...............................................................................43

Figure 6-3 Idle Power Management Breakdown of the Processor Cores..........................56

Figure 6-4 Thread and Core C-state .........................................................................56

Figure 8-5 Package Mechanical Drawings ..................................................................66

Figure 8-6 Package Pinmap (Top View, Upper-Left Quadrant) ......................................67

Figure 8-7 Package Pinmap (Top View, Upper-Right Quadrant) ....................................68

Figure 8-8 Package Pinmap (Top View, Lower-Left Quadrant) ......................................69

Figure 8-9 Package Pinmap (Top View, Lower-Right Quadrant) ....................................70

Tables

Table 1-1 References ............................................................................................13

Table 2-2 Signal Type ...........................................................................................15

Table 2-3 Signal Description Buffer Types................................................................15

Table 2-4 CPU Legacy Signal..................................................................................16

Table 2-5 Memory Channel A .................................................................................19

Table 2-6 Memory Reference and Compensation.......................................................20

Table 2-7 Reset and Miscellaneous Signal ................................................................20

Table 2-8 DMI - Processor to Intel NM10 Express Chipset Serial Interface ....................21

Table 2-9 PLL Signals............................................................................................21

Table 2-10 Analog Display Signals ............................................................................22

Table 2-11 LVDS Signals .........................................................................................23

Table 2-12 JTAG/ITP Signals....................................................................................24

Table 2-13 Error and Thermal Protection ...................................................................24

Table 2-14 Processor Core Power Signals...................................................................25

Table 2-15 Power Signals ........................................................................................25

Table 2-16 Ground .................................................................................................26

Table 3-17 Analog Port Characteristics ......................................................................32

Table 3-18 Targeted Memory State Conditions ...........................................................34

Table 3-19 Platform System States...........................................................................34

Table 3-20 Processor Power States...........................................................................34

Table 3-21 Graphics Processing Unit .........................................................................35

Table 3-22 Main Memory States ...............................................................................35

Table 3-23 G, S and C State Combinations ................................................................35

Table 3-24 D, S and C State Combinations .................... ................................. ...........35

Table 4-25 Voltage Identification Definition................................................................39

Table 4-26 VID Pin Mapping.....................................................................................40

Table 4-27 Processor Absolute Minimum and Maximum Ratings....................................42

Table 4-28 Processor Core Active and Idle Mode DC Voltage and Current Specifications ...44

Table 4-29 Processor Uncore I/O Buffer Supply DC Voltage and Current Specifications .....45

Table 4-30 Input Clocks (BCLK, HPL_CLKIN, DPL_REFCLKIN, EXP_CLKIN) Differential

Specification..........................................................................................47

Table 4-31 DDR2 Signal Group DC Specifications........................................................47

Table 4-32 GTL Signal Group DC Specifications ..........................................................48

Table 4-33 Legacy CMOS Signal Group DC Specification ..............................................49

Table 4-34 Open Drain Signal Group DC Specification..................................................49

Table 4-35 PWROK and RSTIN# DC Specification........................................................50

Table 4-36 CPUPWRGOOD DC Specification................................................................50

6Datasheet

Table 4-37 TAP Signal Group DC Specification ............................................................51

Table 4-38 CRT_DDC_DA TA. CRT_DDC_CLK, LDDC_DAT A, LDDC_CLK, LCTLA_CLK, and

LCTLB_DATA DC Specification ..................................................................51

Table 4-39 CRT_HSYNC and CRT_VSYNC DC Specification............................................51

Table 4-40 LVDS Interface DC Specification (functional operating range,

VCCLVD = 1.8V ±5%).............................................................................53

Table 4-41 LVDD_EN, LBKLT_EN and LBKLT_CTL DC Specification.................................53

Table 6-42 System States........................................................................................55

Table 6-43 Processor Core Idle States .......................................................................55

Table 6-44 Coordination of Thread Low-power States at the Package/Core Level.............57

Table 6-45 Coordination of Core Power States at the Package Level..... ..........................58

Table 7-46 Power Specifications for the Standard Voltage Processor ..............................60

Table 7-47 Thermal Diode Interface ..........................................................................61

Table 7-48 Thermal Diode Parameters using Transistor Model........ .. .. .......... .. ........... .. ..61

Table 8-49 Processor Ball List by Ball Name ...............................................................70

Datasheet 7

Revision History

Revision

Number Description Revision Date

001 • Initial Release December 2009

002 • Added DDR3 SKU June 2010

Introduction

8Datasheet

1 Introduction

The Intel® Atom™ Processor D400 and D500 Series processors are built on 45-

nanometer Hi-K process technology. The processor is designed for a two-chip platform

as opposed to the traditional three-chip platforms (processor, GMCH, and ICH). The

two-chip platform consists of a processor and the chipset and enables higher

performance, lower cost, easier validation, and improved x-y footprint.

Note: Throughout this document, Intel® Atom™ Processor D400 and D500 Series is referred

to as processor and Intel® NM10 Express Chipset is referred to as chipset.

Included in this family of processors is an integrated memory controller (IMC),

integrated gr aphics processing unit (GPU ) and integrated I/O (IIO) (such as DMI) on a

single silicon die. This single die solution is known as a monolithic processor.

1.1 Intel® Atom™ Processor D400 and D500 Series

Features

The following list provides some of the key features on this processor:

•On die, primary 32-kB instructions cache and 24-kB write-back data cache

•Intel® Hyper-Threading Technology 2-threads per core

•On die 2 x 512-kB, 8-way L2 cache for D510 dual-core processor, 1 x 512-kB, 8-

way L2 cache for D410 single-core processor

•Support for IA 32-bit

•Intel® Streaming SIMD Extensions 2 and 3 (SSE2 and SSE3) and Supplemental

Streaming SIMD Extensions 3 (SSSE3) support

•Intel® 64 architecture

•Micro-FCBGA8 packaging technologies

•Thermal management support via Intel® Thermal Monitor (TM1)

•Supports C0 and C1 states only

•Execute Disable Bit support for enhanced security

Datasheet 9

Introduction

1.2 System Memory Features

•DDR2 (D410, D510, D425, and D525)

— One channel of DDR2 memory (consists of 64 data lines):

Maximum of two DIMMs per channel, containing single or double-sided DIMM

— Memory DDR2 data transfer rates of 667 and 800 MT/s

— Only non-ECC DIMMs are supported

— Support unbuffered DIMMs

— I/O Voltage of 1.8V for DDR2

— Supports 512-Mb, 1-Gb & 2-Gb technologies for DDR2

— Support 4 banks for 512 Mbit densities for DDR2

— Support 8 banks for 1-Gb and 2-Gb densities for DDR2

— Support 2 DIMMs, 4 GB (assuming 2-Gb density device technology) maximum

— Support up to 32 simultaneous open pages per channel (assuming 4 ranks of

8i devices)

— Support Partial Writes to memory using Data Mask signals (DM)

— Enhances Address Mapping

— Support DIMM page size of 4KB and 8KB

— Support data burst length of 8 for all memory configurations

— Support memory thermal management scheme to selectively manage reads

and/or writes. Memory thermal management can be triggered by either on-die

thermal sensor, or by preset limits. Management limits are determined by

weighted sum of various commands that are scheduled on the memory

interface.

•DDR3 SO-DIMM only (D525 and D425)

— Support for DDR3 at data transfer rate of 800 MT/s only

— One channel of DDR3 memory (consists of 64-bit data lines); maximum of

2 SO-DIMMs in Raw Card A or Raw Card B format

— I/O Voltage of 1.5 V for DDR3

— Maximum of 4GB memory capacity supported

— Memory organizations supported (refer to Platform Design Guide for more

details)

2 SO-DIMM

1 SO-DIMM

Introduction

10 Datasheet

1.3 Direct Media Interface Features

•Compliant to Direct Media Interface (DMI)

•Support 4 lanes in each direction, 2.5 Gbps per lane per direction, point-to-point

DMI interface to Intel® NM10 Express Chipset.

•100 MHz reference clock.

•Support 64 bit downstream address (only 36-bit addressable from CPU)

•Support APIC messaging support. Will send Intel-defined “End of Interrupt”

broadcast message when initiated by CPU.

•Support messaging in both directions, including Intel-Vendor specific messages.

•Support Message Signal Interrupt (MSI) messages.

•Support P ower Management state change messages.

•Support SMI, SCI and SERR error indication.

•Support PCI INTA interrupt from CHAP Counters device and Integrated Graphics.

•Support legacy support for ISA regime protocol (PHOLD/PHOLDA) required for

parallel port DMA, floppy drive and LPC bus masters.

•Support Intel NM10 Express Chipset with on board hy brid AC-DC coupling solution.

•Support x4 link width configuration.

•Support polarity inversion

1.4 Graphics Processing Unit Features

•The GPU contains a refresh of the 3rd generation graphics core

•Intel® Dynamic Video Memory Technology support 4.0

•Directx* 9 compliant Pixel Shader* v2.0

•400 MHz render clock frequency

•2 display ports: LVDS and RGB

— Single LVDS channel supporting resolution up to 1366 * 768, 18b pp

— Analog RGB display output resolution up to 2048 * 1536@ 60 Hz

•Intel® Clear Video Technology

— MPEG2 Hardware Acceleration

—ProcAmp

Datasheet 11

Introduction

1.5 Clocking

•Differential Core clock of 166MHz and 200 MHz (BCLKP/BCLKN). Core clock and

Host clock need to match one another. If Core clock is 166 MHz, Host clock needs to

be 166 MHz.

•Differential Host clock of 166 MHz and 200 MHz (HPL_CLKINP/HPL_CLKINN).

•Memory clocks

— When running DDR2-667, memory clocks are generated from internal Host PLL.

— When running DDR2-800, memory clocks are generated from the Memory PLL

•The differential DMI clock of 100 MHz (EXP_CLK INP /EX P_ C LKINN) ge ne rates the

DMI core clock of 250 MHz.

•Display timings are generated from displa y PLLs that use a 96 MHz differential SSC

and non-SS C, and 100 MHz differential clock with SSC as reference.

•Host, Memory, DMI, Display PLLs and all associated internal clocks are disabled

until PWROK is asserted.

1.6 Power Management

•PC99 suspend to DRAM support (“STR”, mapped to ACPI state S3)

•SMRAM space remapping to A0000h (128 kB)

•Support extended SMRAM space above 256 MB, additional 1MB TSEG from the

base of graphics stolen memory (BSM) when enabled, and cacheable (cacheability

controlled by CPU).

•ACPI Rev 1.0b compatible power management

•Support CPU states: C0 and C1

•Support System states: S0, S3, S4 and S5

•Support CPU Thermal Management 1 (TM1)

1.6.1 Terminology

Term Description

BGA Ball Grid Array

BLT Block Leve l Transfe r

CRT Cathode Ray Tube

DDR2 Second generation Double Data Rate SDRAM memory technology

DMA Direct Memory Access

DMI Direct Media Interface

DTS Digital Thermal Sensor

ECC Error Correction Code

Introduction

12 Datasheet

Execute Disable Bit The Execute Disable bit allows memory to be marked as executable or

non-executable, when combined with a supporting operating system.

If code attempts to run in non-executable memory the processor

raises an error to the operating system. This feature can prevent some

classes of viruses or worms that exploit buffer overrun vulnerabilities

and can thus help improve the overall security of the system. See the

Intel® 64 and IA-32 Architectures Software Developer's Manuals for

more detailed information.

Micro-FBGA Micro Flip Chip Ball Grid Array

(G)MCH Legacy component - Graphics Memory Controller Hub. Platforms

designed for the Intel Atom Processor D400 and D500 Series do not

use an (G)MCH.

GPU Graphics Processing Unit

ICH The legacy I/O Controller Hub component that contains the main PCI

interface, LPC interface, USB2, Serial ATA, and other I/O functions. It

communicates wi th the legacy ( G)MCH over a pr oprietary interconn ect

called DMI. Platforms designed for the Intel® Atom™ Processor D400

and D500 Series do not use an ICH.

IMC Integrated Memory Controller

Intel® 64 Technology 64-bit memory extensi ons to the IA-32 architecture.

LCD Liquid Crystal Display

LLC Last Level Cache. The LLC is the shared cache amongst all processor

execution cores

LVDS Low Voltage Differential Signaling

A high speed, low power data transmission standard used for display

connections to LCD panels.

MCP Multi-Chip Package

NCTF Non-Critical to Function: NCTF locations are typically redundant

ground or non-critical reserved, so the loss of the solder joint

continuity at end of life conditions will not affect the overall product

functionality.

Processor The 64-bit, single-core or multi-core component (package)

Processor Core The term “processor core” refers to Si die itself which can contain

multiple execution cores. Each execution core has an instru ction

cache, data cac he, and 256-KB L 2 cache. All executi on cores share th e

L3 cache.

Rank A unit of DRAM corresponding four to eight devices in parallel, ignoring

ECC. These devices are usually, but not always, mounted on a single

side of a SO-DIMM.

SCI System Control Interrupt. Used in ACPI protocol.

SMT Simultaneous Multi-Th r eading

Term Description

Datasheet 13

Introduction

1.7 References

Material and concepts available in the following documents may be beneficial when

reading this document:

Storage Conditions A non-operational state. The processor may be installed in a platform,

in a tray, or loose. Processors may be sealed in packaging or exposed

to free air. Under these conditions, processor landings should not be

connected to any supply voltages, have any I/Os biased o r receive any

clocks. Upon exposure to “free air” (i.e., unsealed packaging or a

device removed from packaging material) the processor must be

handled in accordance with moisture sensitivity labeling (MSL) as

indicated on the packaging material.

TAC Thermal Averaging Constant

TDP Thermal Design Power

TOM Top of Memory

TTM Time-To-Market

VCC Processor core power supply

VSS Processor ground

VCCGFX Graphics core power supply

V_SM DDR2 power rail

VLD Variable Len gth Decoding

Term Description

Table 1-1. References

Document Document

Number

Intel® 64 and IA-32 Architectures Software Developer's Manuals

Volume 1: Basic Architecture

http://

www.intel.com/

products/processor/

manuals/index.htm

Volume 2A: Instruction Set Reference, A-M

Volume 2B: Instruction Set Reference, N-Z

Volume 3A: System Programming Guide

Volume 3B: System Programming Guide

Intel® Atom™ Processor D500 Specification Update 322862-002

Intel® Atom™ Processor D400 Specification Update 322861-002

Intel® Atom™ Processor D400 and D500 Series Thermal Mechanical Design

Guidelines 322856-002

Intel® NM10 Express Chipset Datasheet 322896-001

Intel® NM10 Express Chipset Specification Update 322897-001

Introduction

14 Datasheet

1.8 System Block Diagram

Figure 1-1.Intel Atom Processor D400 and D500 Series System Block Diagram

DDR2/3

DMI

DDR

System Mem ory

CH A

VGA

Analog

Display

USB 2. 0

8 Ports

GPIO

SATA

2 Ports

In te l® H ig h

Definition Audio

Codec(s)

Firmware

SIO

Power

Management

Clock

Generation

SMBus 2.0/

I2C

Gb LAN

WLAN

PCIe Bus

4 PCIe Slots

PCI Bus 2 PC I Masters

DDR 2: 667/800 M hz

NM 10 E xpress

Chipset

D400 &

D500

CPU

SPI

Flash SPI

LPC

LVDS DDR3: 800 Mhz

Datasheet 15

Signal Description

2 Signal Description

This chapter describes the processor signals. They are arranged in functional groups

according to their associated interface or category. The following notations are used to

describe the signal type:

The signal description also includes the type of buffer used for the particular signal.

Table 2-2. Signal Type

Notations Signal Type

IInput Pin

OOutput Pin

I/O Bi-directional Input/Output Pin

Table 2-3. Signal Description Buffer Types

Signal Description

CMOS CMOS buffers. 1.05 V tolerant

DMI Direct Media Interface signals. These signals are compatible with PCI Express

1.0 Signalling Environment AC Specifications but are DC coupled. The buffers

are not 3.3V tolerant.

HVCMOS High Voltage buffers. 3.3V tolerant

DDR2 DDR2 buffers: 1.8 V tolerant

GTL+ Open Drain Gunning Transceiver Logic signaling technology. Refer to GTL+ I/O

Specification fro complete details.

TAP Test Access Port signal

Analog Analog reference or output. May be used as a threshold voltage or for buffer

compensation

Ref Voltage reference signal

Asynch This signal is asynch ronous and has no timing relationship with any reference

clock.

LVDS Low Voltage Differential Signalling. A high speed, low power data transmission

standard used for display connections to LCD panels.

SSTL - 1.8 Stub Series Termination Logic. These are 1.8V outpu t capable buffers. 1.8V

tolerant.

Signal Description

16 Datasheet

2.1 CPU Legacy Signal

Table 2-4. CPU Legacy Signal

Signal Name Description Direction Type

A20M# If A20M# (Address-20 Mask) is asserted, the

processor masks physical address bit 20 (A20#)

before looking up a line in any internal cache and

before driving a read/write transaction on the bus.

Asserting A20M# emulates the 8086 processor's

address wrap-around at the 1-MB boundary.

Assertion of A20M# is only supported in real mode.

A20M# is an asynchronous signal. However, to

ensure recognition of this signal following an input/

output write instruction, it must be valid along with

the TRDY# assertion of the corresponding input/

output Write bus transaction.

ICore

CMOS

BSEL[2:0] BSEL[2:0] (Bus Select) are used to select the

processor input clock frequency. OCore

CMOS

EXTBGREF External Bandgap Reference. Debug feature. ICore

Analog

FERR#/PBE# FERR# (Floating-point Error)/PBE# (Pending Break

Event) is a multiplexed signal and its meaning is

qualified with STPCLK#. When STPCLK# is not

asserted, FERR#/PBE# indicates a floating point

when the processor detects an unmasked floating-

point error. FERR# is similar t o the ERROR# signal

on the Intel 387 coprocessor, and is included for

compatibility with systems using MSDOS*- type

floating-point error reporting. When STPCLK# is

asserted, an assertion of FERR#/PBE# indicates that

the processor has a pending break event waiting for

service. The asse rtion of FERR#/PB E# indicates that

the processor should be returned to the Normal

state. When FERR # /PBE# is asserted, indicating a

break event, it will remain asserted until STPCLK# is

deasserted. Assertion of PREQ# when STPCLK# is

active will also cause an FERR# break event.

For additional information on the pending break

event functionality, including identification of

support of the feature and enable/disable

information, refer to Volume 3 of the Intel® 64 and

IA-32 Architectures Software Developer's Manuals

and the Intel® Processor Identification and CPUID

Instruction Application Note. For

termination requirements, refer to the platform

design guide.

OCore

Open

Drain

Datasheet 17

Signal Description

IGNNE# IGNNE# (Ignore Numeric Error) is asserted to force

the processor to ignore a numeric error and continue

to execute non-control floating-point instructions. If

IGNNE# is deasserted, the processor generates an

exception on a non-control floating-point i nstruc tion

if a previous floating-point instruction caused an

error. IGNNE# has no effect when the NE bit in

control register 0 (CR0) is set.

IGNNE# is an asynchronous signal. However, to

ensure recognition of this signal following an Input/

Output write instruction, it must be valid along with

the TRDY# assertion of the corresponding Input/

Output Write bus transaction.

ICore

CMOS

INIT# INIT# (Initialization), when asserted, resets integer

registers inside t he processor without affecting it s

internal caches or floating-point registers. The

processor then begin s execution at the power-on

Reset vector configured during power-on

configuration. The processor continues to handle

snoop requests during INIT# assertion. INIT# is an

asynchronous signal. However, to ensure recognition

of this signal following an Input/Output Write

instruction, it must be valid along with the TRDY#

assertion of the corresponding Input/Output Write

bus transaction.

ICore

CMOS

LINT00, LINT10 LINT[1:0] (Local AP IC Interrupt) must connect the

appropriate pins of all APIC Bus agents. When the

APIC is disabled, the LINT00 signal becomes INTR, a

maskable interrupt request signal, and LINT10

becomes NMI, a non-maskable interrupt. INTR and

NMI are backward compatible with the signals of

those names on the Pentium processor. Both signals

are asynchronous.

Both of these signals must be software configured

via BIOS programming of the APIC register space to

be used either as NMI/INTR or LINT00/LINT10.

Because the APIC is enabled by default after Reset,

operation of these pins as LINT00/LINT10 is the

default configuration.

ICore

CMOS

Table 2-4. CPU Legacy Signal

Signal Name Description Direction Type

Signal Description

18 Datasheet

CPUPWRGOOD CPUPWRGOOD (Power Good) is a processor input.

The processor requires this signal to be a clean

indication that the clocks and power supplies are

stable and within their spe cificati ons. ‘Clean’ i mplies

that the signal will remain low (capable of sinking

leakage current), without glitches, from the time

that the power supplies are turned on until th ey

come within specification. The signal must then

transition monotonically to a high state. Rise time

and monotonicity requirements are shown in

Chapter 4 Electrical Specifications. CPUPWRGOOD

can be driven inactive at any time, but clocks and

power must again be stable before a subsequent

rising edge of CPUPWRGOOD. It must also meet the

minimum pulse width specification.

The CPUPWRGOOD signal must be supplied to the

processor; it is used to protect internal circuits

against voltage sequencing issues. It should be

driven high throughout boundary scan operation.

ICore

CMOS

SMI# SMI# (System Management Interrupt) is asserted

asynchronously by system logi c. On accepting a

System Management Interrupt, the processor saves

the current state and enter System Management

Mode (SMM). An SMI Acknowledge transaction is

issued, and the processor begins program execution

from the SMM handler. If SMI#

is asserted during the deassertion of RESET# the

processor will tristate its outputs.

ICore

CMOS

STPCLK# Stop clock. ICore

CMOS

GTLREF GTL reference voltage for BPM* pins. R efer Platform

Design Guide for connection recommendation. ICore

Analog

THERMDA_1

THERMDC_1 Thermal Diode - Anode & Cathode. Suffix 1 refers to

core #1. Suffix 1 refers to core #1. I

OCore

Analog

THERMDA_2

THERMDC_2 Thermal Diode - Anode & Cathode. Suffix 2 refers to

core #2. Suffix 2 refers to core #2.

No connect for single-core processor.

OCore

Analog

BPM_1#[3:0]

BPM_2#[3:0] Breakpoint and Performance Monitor Signals: Output

from the processor that indicate the status of

breakpoints and programmable counters use d for

monitoring processor performance.

BPM_2# is no connect for single-core processor.

I/O GTL+

PRDY# PRDY# is a processor output used by debug tools to

determine processor debug readiness. I/O GTL+

Table 2-4. CPU Legacy Signal

Signal Name Description Direction Type

Datasheet 19

Signal Description

2.2 System Memory Interface

PREQ# PREQ# is used by debug tools to request debug

operation of the processor. IGTL+

DPRSTP# DPRSTP# when asserted on the platform causes the

processor to transition from Deep Sleep State to the

Deeper Sleep State. To return to the Deep Sleep

State, DPRSTP# must be deasserted. DPRSTP# is

driven by the chipset. This function is not supported

for Intel Atom Processor D400 and D500 Series.

ICore

CMOS

DPSLP# DPSLP# when asserted on the platform causes the

processor to transition from the Sleep State to the

Deep Sleep State. To return to the Sleep State,

DPSLP# must be de-asserted. DPSLP# is driven by

the chipset. Thi s function is not supported for Intel

Atom Processor D400 and D500 Series.

ICore

CMOS

Table 2-5. Memory Channel A

Signal Name Description Direction Type

DDR_A_CK_5:0 SDRAM Differential Clock: (3 per DIMM) O SSTL-1.8

DDR_A_CKB_5:0 SDRAM Inverted Differential Clock: (3 per DIMM) O SSTL-1.8

DDR_A_CSB_3:0 Chip Select: (1 per Rank) O SSTL-1.8

DDR_A_CKE_3:0 Clock Enable: (power management - 1 per Rank) O SSTL-1.8

DDR_A_MA_14:0 Multiplexed Address O SSTL-1.8

DDR_A_BS_2:0 Bank Select O SSTL-1.8

DDR_A_RASB RAS Control Signal O SSTL-1.8

DDR_A_CASB CAS Control Signal O SSTL-1.8

DDR_A_WEB Write Enable Control Signal O SSTL-1.8

DDR_A_DQ_63:0 Data Lines I/O SSTL-1.8

DDR_A_DM_7: 0 Data Mask: These signals are used to mask individual

bytes of data in the case of a partial write, and to interrupt

burst writes OSSTL-1.8

DDR_A_DQS_7:0 Data Strobes I/O SSTL-1.8

DDR_A_DQSB_7:0 Data Strobe Complements (DDR2) I/O SSTL-1.8

DDR_A_ODT_3:0 On Die Termination: Active Termination Control (DDR2) OSSTL -1.8

Table 2-4. CPU Legacy Signal

Signal Name Description Direction Type

Signal Description

20 Datasheet

Table 2-6. Memory Reference and Compensation

NOTE: Please refer to appropriate platform design guide for connections recommendations.

Table 2-7. Reset and Miscellaneous Signal

NOTE: RSVD_* numbering needs to be observed for BSDL testing purposes.

Signal

Name Description Direction Type

DDR_RPD System Memory RC OMP s ign al. Refer Platform Design for

connection recommendation. I/O Analog

DDR_RPU System Mem ory R COMP s ign al. Refer Platform Design for

connection recommendation. I/O Analog

DDR_VREF SDRAM Reference Voltage: external reference voltage

input for each DQ, DQS. Internal VREF is also supported. IAnalog

DDR_PREF Reserved. O N/A

Signal Name Description Direction Type

RSTINB

Reset In: When asserted, this signal will asynchronously reset

the CPU logic. The signal is connected to the PCIRST# output

of the Intel NM10 Express Chipset.

This input should have a Schmitt trigger to avoid spurious

resets.

This signal is required to be 3.3-V tolerant.

IHVCMOS

PWROK

Power OK: When asserted, PWROK is an indication to the CPU

that core power has been stable for at least 10us.

This input should have a Schmitt trigger to avoid spurious

resets. This signal is required to be 3.3V tolerant.

IHVCMOS

DDR3_DRAM_PWROK DDR3 power good monitor. Driven by platform logic for DDR3.

Reserved for DDR2 designs ICMOS-

1.5

DDR3_DRAMRST# DDR3 DRAM reset. Reset signal from IMC to DRAM devices.

One for all SO-DIMMs. Used only in DD R3 mode. Reserved for

DDR2 designs. OSSTL-1.5

RSVD_* Reserved. Must be left unconnected on the board. Intel does

not recommend a test point on the board for this ball. NC

RSVD_NCTF_* Reserved/non-critical to function. Pin for package mechanical

reliability. A test point may be placed on the board for this

ball. I/O

RSVD_TP_* Reserved-test-point. A test poi nt may be placed on the board

for this ball. I/O

XDP_RSVD_[17:0] Reserved XDP debug signals.

Datasheet 21

Signal Description

2.3 DMI - Direct Media Interface

Table 2-8. DMI - Processor to Intel NM10 Express Chipset Serial Interface

2.4 PLL Signals

Table 2-9. PLL Signa ls

Signal Name Description Direction Type

DMI_RXP[3:0]

DMI_RXN[3:0] DMI input from Intel NM10 Express Chipset: Direct

Media Interface receive differential pair. IDMI

DMI_TXP[3:0]

DMI_TXN[3:0] DMI output to Intel NM10 Express Chipset: Direct

Media Interface transmit differential pair. ODMI

EXP_ICOMPI

PCI Express-G Input Current Compensation. Connect

to a 50-Ohm resistor to ground. EXP_ICOMPI and

EXP_RCOMPO are shorted off-die and should be

connected to the same 5 0-Ohm resistor.

IAnalog

EXP_RCOMPO

PCI-Express-G Resistance Compensation. Connect to a

50-Ohm resistor to ground. EXP_ICOMPI and

EXP_RCOMPO are shorted off-die and should be

connected to the same 5 0-Ohm resistor.

I/O Analog

EXP_RBIAS PCI-Express CML Bias control: Connect to a 750-Ohm

resistor to ground. I/O Analog

Signal Name Description Direction Type

BCLKP[0]

BCLKN[0] Differential Core Clock In I Diff Clk

CMOS

HPL_CLKINP

HPL_CLKINN Differential Host Clock In I Diff Clk

CMOS

EXP_CLKINP

EXP_CLKINN Differential DMI Clock In I Diff Clk

CMOS

DPL_REFCLKINN

DPL_REFCLKINP Differential PLL Clock In I Diff Clk

CMOS

DPL_REFSSCLKINN

DPL_REFSSCLKINP Differential Spread Spectrum Clock In I Diff Clk

CMOS

Signal Description

22 Datasheet

2.5 Analog Display Signals

Table 2-10.Analog Display Signals

Signal Name Description Direction Type

CRT_RED RED Analog Video Output: This signal is a CRT

Analog video output from the internal color palette

DAC. The DAC is designed for a 37.5 Ohm routing

impedance but the terminating resistor to ground

will be 75 Ohms (e.g., 75 Ohm resistor on the

board, in parallel with 75 Ohm CRT load).

OAnalog

CRT_GREEN GREEN Analog Video Output: This signal is a CRT

Analog video output from the internal color palette

DAC. The DAC is designed for a 37.5 Ohm routing

impedance but the terminating resistor to ground

will be 75 Ohms (e.g., 75 Ohm resistor on the

board, in parallel with 75 Ohm CRT load).

OAnalog

CRT_BLUE BLUE Analog Video Output: This signal is a CRT

Analog video output from the internal color palette

DAC. The DAC is designed for a 37.5 Ohm routing

impedance but the terminating resistor to ground

will be 75 Ohms (e.g., 75 Ohm resistor on the

board, in parallel with 75 Ohm CRT load).

OAnalog

CRT_IRTN Current return path. Shorted to ground O Analog

DAC_IREF Resistor Set: Set point resistor for the internal color

palette DAC. A 665 Ohm 0.5% resistor is required

between DAC_IREF and motherboard ground. I/O Analog

CRT_HSYNC CRT Horizontal Synchronization: This signal is used

as the vertical sync (polarity is programmable) or

“sync interval”. 3.3V output. OHVCMOS

CRT_VSYNC CRT Vertical Synchronization: This signal is used as

the vertical sync (polarity is programmable). 3.3V

output. OHVCMOS

CRT_DDC_CLK Monitor Control Clock I/O COD

CRT_DDC_DATA Monitor Control Data I/O COD

Datasheet 23

Signal Description

2.6 LVDS Signals

Table 2-11.LVDS Signals

Signal Name Description Direction Type

LVD_A_DATAP[2:0] Differential data output - positive O LVDS

LVD_A_DATAN[2:0] Differential data output - negative O LVDS

LVD_A_CLKP Differential clock output - positive O LVDS

LVD_A_CLKN Differential clock output - negative O LVDS

LVD_IBG LVDS Reference Current. Need 2.37 kOhms

pull-down resistor I/O Ref

LVD_VBG Reserved. No connect. O Analog

LVD_VREFH Reserved. Can be connected to VSS or left as

No Connect. IRef

LVD_VREFL Reserved. Can be connected to VSS or left as

No Connect. IRef

LVDD_EN LVDS panel power enable: Panel power control

enable control.

This signal is also called VDD_D BL in the CPIS

specification and is used to control the VDC

source to the panel logic.

OHVCMOS

LBKLT_EN LVDS backlight enable: Panel backlight enable

control.

This signal is also called ENA_BL in the CPIS

specification and is used to gate power into the

backlight circuitry.

Note: The accu racy of the PWM duty cycle of

LBKLT_CTL signal for any given value will be

within ±20 ns.

OHVCMOS

LBKLT_CTL Panel backlight brightness control: Panel

brightness control. This signal is also called

VARY_BL in the CPIS specification and is used

as the PWM clock input signal.

OHVCMOS

LCTLA_CLK I2C based control signal (clock) for External

SSC clock chip control - optional I/O COD

LCTLB_DATA I2C based control signal (data) for External

SSC clock chip control - optional I/O COD

LDDC_CLK Display Data Channel clock I/O COD

LDDC_DATA Display Data Channel data I/O COD

Signal Description

24 Datasheet

2.7 JTAG/ITP Signals

2.8 Error and Thermal Protection

Table 2-12.JTAG/ITP Signals

Signal

Name Description Direction Type

TCK TCK (Test Clock) provides the clock input for the

processor Test Bus (also known as the Test Access Port). ITAP

TDI TDI (Test Data In) transfers serial test data into the

processor. TDI provides the serial input needed for JTAG

specification support. ITAP

TDO TDO (Test Data Out) transfers serial test data out of the

processor. TDO provides the serial output needed for

JTAG specification support. OTAP

TMS TMS (Test Mode Select) is a JTAG specifi cation support

signal used by debug tools. ITAP

TRST#

TRST# (Test Reset) resets the Test Access Port (TAP)

logic. TRST# must be driven low during power on Reset.

Refer to the Nehalem Processor Debug Port Design Guide

for complete implementation details.

ITAP

Table 2-13.Error and Thermal Protection

Signal

Name Description Direction Type

PROCHOT#

PROCHOT# will go active when the processor

temperature monitoring sensor(s) detects that the

processor has reached its maximum safe operation

temperature

Output: This indicates that the processor (core0 and

core1) Thermal Control Circuit has been activated, if

enabled.

Input: This signal can also be driven to the processor to

activate the Thermal Control Circuit in core0 and core1.

This signal does not have on-die termination and must

be terminated on the system board, and 60 Ohm

resistor to Vcc.

I/O I: CMOS

O: OD

THERMTRIP#

Thermal Trip: Th e processor protects itself from

catastrophic overheating by use of an internal thermal

sensor. This sensor is set well above the normal

operati ng temperature to ens ure that there are no false

trips. The processor will stop all execution when the

junction temperature exceeds approximately 125 C.

This is signaled to the system by the THERMTRIP# pin.

Refer to the appropriate platform design guide for

termination requirements.

OOpen

Drain

Datasheet 25

Signal Description

2.9 Processor Core Power Signals

Table 2-14.Processor Core Power Signals

2.10 Graphics, DMI and Memory Core Power Signals

Signal

Name Description Direction Type

VCC Processor core power supply. The voltage supplied to

these pins is determined by the VID pins. PWR

VCC_SENS

EVCC_SENSE and VSS_SENSE provide an isolated, low

impedance connection to the processor core voltage

and ground. They can be used to sense or measure

voltage near the silicon.

Analog

VID[6:0] VID[6:0] (Voltage ID) are used to support automatic

selection of power supply voltages (VCC). Intel Atom

Processor D400 and D500 Series support only a single

fused voltage.

Refer to the appropriate platform design guide or

Voltage Regulator-Down (VRD) 11.0 Design Guidelines

for more information. The voltage supply for these

signals must be valid before the VR can supply VCC to

the processor. Conversely, the VR output must be

disabled until the voltage supply for the VID signals

become valid. The VR must supply the voltage that is

requested by the signals, or disable itself.

I/O CMOS

VSS_SENS

EVCC_SENSE and VSS_SENSE provide an isolated, low

impedance connection to the processor core voltage

and ground. They can be used to sense or measure

voltage near the silicon.

Analog

VCCA Processor PLL power supply. PWR

Table 2-15.Power Signals

Signal Name Description Direction Type

VCCP LGI power supply 1.05 PWR

VCCGFX Graphics core power supply 1.05 PWR

VCCSM DDR power supply 1.8 PWR

VCCA_DMI DMI power supply 1.05 PWR

VCCACRTDAC CRT power supply 1.8 PWR

VCC_GIO GPIO power supply 3.3 PWR

VCC_LGI_VID LGIO power supply 1.05 PWR

VCCA_DDR DDR power supply 1.05 PWR

VCCD_HMPLL HMPLL power supply 1.05 PWR

VCCDLVD LVDS power supply 1.8 PWR

VCCALVD LVDS power supply 1.8 PWR

Signal Description

26 Datasheet

2.11 Ground

Table 2-16.Ground

VCCSFR_DMIHMPLL DMI, HPLL, MPLL power supply 1.8 PWR

VCCACK_DDR DDR power supply 1.05 PWR

VCCD_AB_DPL DPLL power supply 1.05 PWR

VCCSFR_AB_DPL DPLL power supply 1.8 PWR

VCCRING_EAST DAC, GIO, LVDS power supply 1.05 PWR

VCCRING_WEST LGIO power supply 1.05 PWR

VCCCK_DDR DDR clock power supply 1.8 PWR

Signal

Name Description Direction Type

VSS VSS are the ground pins for the processor and should be

connected to the system ground plane. GND

Table 2-15.Power Signals

Signal Name Description Direction Type

Datasheet 27

Functional Description

3 Functional Description

3.1 System Memory Controller

The system memory controller supports DDR2 and DDR3 (SO-DIMM only protocols)

with one 64 bit wide channel accessing two DIMMs. The controller supports a maximum

of two non-ECC DDR2 DIMMs or two un-buffered DIMMs, single or double sided; thus

allowing up to four device ranks. Intel® Fast Memory Access (Intel® FMA) is

supported.

3.1.1 System Memory Organization Modes

The system memory controller supports only one memory organization mode: single

channel. In this mode, all memory cycles are directed to a single channel.

3.1.2 System Memory Technology Supported

3.1.2.1 DDR2

The system memory controller supports the following DDR2 Data Transfer R ates, DIMM

Modules and DRAM Device Technologies:

•DDR2 Data Transfer Rates: 667 (PC 5300), non-ECC

— Rawcard C = single sided x16

— Rawcard D = single sided x8

— Rawcard E = double sided x8

•DDR2 Data Transfer Rates: 800 (PC 6400), non-ECC

— Rawcard C = single sided x16

— Rawcard D= single sided x8

— Rawcard E = double sided x8

“Single sided” above is a logical term referring to the number of Chip Selects attached

to the DIMM. A real DIMM may put the components on both sides of the substr ate, but

be logically indistinguishable from single sided DIMM if all components on the DIMM are

attached to the same Chip Select signal.

•x8 means that each component has 8 data lines.

•x16 means that each component has 16 data lines.

There is no support for DIMMs with different technologies or capacities on opposite

sides of the same DIMM. If one side of a DIMM is populated, the other side is either

identical or empty.

There is no support for 4Gb and 8Gb technology.

Functional Description

28 Datasheet

Supported components for DDR2 at 667 (PC5300) and 800 (PC6400) include:

•256Mb technology

— 32M cells x8 data bits/cell

1K columns

4 banks

8K rows

each component has a 1KB page

one DIMM has 8 components resulting in an 8KB page

the capacity of one rank is 256MB

— 16M cells x16 data bits/cell

512 column

4 banks

8K rows

each component has 1KB page

one DIMM has 4 components resulting in a 4KB page

the capacity of one rank is 128MB

•512Mb technology

— 64M cells x8 data bits/cell

1K columns

4 banks

16K rows

each component has a 1KB page

one DIMM has 8 components resulting in a 8KB page

the capacity of one rank is 512MB

— 32M cells x16 data bits/cell

1K columns

8 banks

16K rows

each component has a 1KB page

one DIMM has 8 components resulting in a 8KB page

the capacity of one rank is 256MB

Datasheet 29

Functional Description

•1Gb technology

— 128M cells x8 data bits/cell

1K columns

8 banks

16K rows

each component has 1KB page

one DIMM has 8 components resulting in a 8KB page

the capacity of one rank is 1GB

— 64M cells x16 data bits/cell

1K columns

8 banks

8K rows

each component has a 2KB page

one DIMM has 4 components resulting in an 8KB page

the capacity of one rank is 512MB

•2Gb technology

— 256M cells x8 data bits/cell

1K columns

8 banks

16K rows

each component has a 1KB page

one DIMM has 8 components resulting in a 8KB page

the capacity of one rank is 2GB

— 128M cells x16 data bits/cell

1K columns

8 banks

8K rows

each component has a 2KB page

one DIMM has 4 components resulting in a 8KB page

the capacity of one rank is 1GB

Functional Description

30 Datasheet

3.1.2.2 DDR3 (SO-DIMM Only)

The system memory controller supports the following DDR3 data transfer rates, SO-

DIMM modules and DRAM device technologies:

•DDR3 data transfer rate of 800 MT/s

•DDR3 SO-DIMM modules (unbuffered, non-ECC)

— Raw card A = 2 ranks of x16 SDRAMs (double sided)

— Raw card B = 1 rank of x8 SDRAM (double sided)

Note: x16/x8 means that each SDRAM component has 16/8 data lines.

— DDR3 DRAM Device Technology:

Standard 1-Gb and 2-Gb technologies and addressing are supported for x16/x8

devices. There is no support for SO-DIMMs with different technologies or

capacities on opposite sides of the same SO-DIMM. If one side of a SO-DIMM is

populated, the other side is either identical or empty.

— Supported DDR3 SO-DIMM module configurations

3.1.3 Rules for Populating DIMM Slots

The frequency of system memory will be the lowest frequency of all DIMMs in the

system, as determined through the SPD registers on the DIMMs. Timing parameters

[CAS latency (or CL + AL for DDR2), tRAS, tRCD, tRP] must be programmed to match

within a channel.

In single channel mode, any DIMM slot within the channel may be populated in any

order. T o take advantage of enhanced addressing, it is best to populate both DIMM slots

with identical DIMMs.

3.2 Graphics Processing Unit

This section details the integrated graphics engines (3D, 2D and video), 3D pipeline,

and the respective capabilities.

The CPU’ s graphics processing unit (GPU) contains several types of components. The

major components in the GPU are the engines, planes, pipes and ports. The GPU has a

3D/2D instruction processing unit to control the 3D and 2D engines respectively. The

Raw Card

Type DIMM

Capacity

DRAM

Device

Tech.

DRAM

Organization

# of

DRAM

Devices

# of

Ranks # of

Banks

A 1 GB 1 Gb 64 M x16 8 2 8

A 2 GB 2 Gb 128 M x16 8 2 8

B 1 GB 1 Gb 128 M x8 8 1 8

B 2 GB 2 Gb 256 M x8 8 1 8

Datasheet 31

Functional Description

CPU’ s 3D and 2D engines are fed with data through the memory controller. The outputs

of the engines are surfaces sent to the memory, which are then retrieved and

processed by the CPU planes.

3.2.1 3D Graphics Pipeline

This CPU is the next step in the evolution of integrated graph ics. In addition to running

the graphics engine at 400 MHz, the GPU has two pixel pipelines.

The 3D graphics pipeline has a deep pipelined architecture in which each stage can

simultaneously operate on different primitives or on different portions of the same

primitive. The 3D graphics pipeline is broken up into four major stages: geometry

processing, setup (vertex processing), texture application and rasterization.

The graphics is optimized by using the processor for adv ance software based tr ansform

and lighting (geometry processing) as defined by DirectX*. The other three stages of

3D processing are handled on the GPU. The setup stage is responsible for vertex

processing - converting vertices to pixels. The texture application stage applies

textures to pixels. The rasterization engine takes textured pixels and applies lighting

and other environment affects to produce the final pixel value. From the rasterization

stage, the final pixel value is written to the frame buffer in memory so it can be

displayed.

3.2.1.1 3D Engine

The 3D engine on the GPU has been designed with a deep pipelined architecture, where

performance is maximized by allowing each stage of the pipeline to simultaneously

operate on different primitive or portions of the same primitive. The GPU supports

P erspective-Correct Texture Mapping, Multi-textures, Bump-Mapping, Cubic

Environment Maps, Bilinear, Trilinear and Anisotropic MIP mapped filtering, ground

shading, Alpha-blending, Vertex and Per Pixel Fog and Z/W Buffering.

The 3D Pipeline subsystem performs the 3D rendering acceleration. The main blocks of

the pipeline are the setup engine, scan converter, texture pipeline, and raster pipeline.

A typical programming sequence would be to send instructions to set the state of the

pipeline followed by rending instructions containing 3D primitive vertex data.

The engines’ performance is dependent on the memory bandwidth available. Systems

that have more bandwidth available will outperform systems with less bandwidth. The

engines’ performance is also dependent on the core clock frequency. The higher the

frequency, the more data is processed.

3.2.1.2 Texture Engine

The GPU allows an image, pattern, or video to be placed on the surface of the 3D

polygon. The texture processor receives the texture coordinate information from the

setup engine and the texture blend information from the scan converter. The texture

processor performs texture color or ChromaK ey matching, texture filtering (anisotropic,

trilinear, bilinear interoplation), and YUV-to-RGB conve rsions.

Functional Description

32 Datasheet

3.2.2 Video Engine

The Video Engine handles the non-3D (media/video) applications. It includes support

for VLD and MPEG2 decode in Hardware. The CGPU engine includes a number of

encompassments over the previous generation capabilities, which have been listed

above.

3.2.3 2D Engine

3.2.4 Analog Display Port Characteristics

The analog display port provides a RGB signal output along with a HSYNC and VSYNC

signal. There is an associated DDC signal pair that is implemented using GPIO pins

dedicated to the analog port. The intended target device is for a CRT based monitor

with a VGA connector. Display devices such as LCD panels with analog inputs may work

satisfactory but no functionality added to the signals to enhance that capability.

Table 3-17.Analog Po rt Characteristics

3.2.4.1 Integrated RAMDAC

The display function contains a RAM-based Digital-to- Analog Conv erter (RAMDAC) that

transforms the digital data from the graphics and video subsystems to analog data for

the CR T monitor. CPU’s integr ated 350 MHz RAMDAC supports resolutions up to 2048 x

1536 @ 60 Hz. Three 8-bit DACs provide the R, G, and B signals to the monitor.

Signal Port Characteristics Support

RGB Voltage Range 0.7 Vp-p only

Monitor Sense Analog Compare

Analog Copy Protection No

Sync o n Green No

HSYNC

VSYNC Voltage 3.3V

Enable/Disable Port control

Polarity Adjust VGA or port control

Composite Sync Support No

Special Flat Panel Sync No

Stereo Sync No

DDC Voltage External buffered to

Control Through GPIO

interface

Datasheet 33

Functional Description

3.2.4.2 Sync Signals

HSYNC and VSYNC signals are digital and conform to T TL signal levels at the connector.

These signals can be polarity adjusted and individually disabled in one of the two

possible states. The sync signals should power up disabled in the high state. No

composite sync or special flat panel sync support will be included.

3.2.4.3 V ES A /VGA Mode

VESA/VGA mode provides compatibility for pre-existing software that set the display

mode using the VGA CRTC registers. Timings are generated based on the VGA register

values and the timing generator registers are not used.

3.2.4.4 DDC (Display Data Channel)

DDC is a standard defined by VESA. Its purpose is to allow commu nication between the

host system and display. Both configuration and control information can be exchanged

allowing plug- and-play systems to be realized. Support for DDC 1 and DDC 2 is

implemented. The CPU uses the CRT_DDC_CLK and CRT_DDC_DATA signals to

communicate with the analog monitor. The CPU will generate these signals at 3.3V.

External pull-up resistors and level shifting circuitry should be implemented on the

board.

The CPU implements a hardware GMBus controller that can be used to control these

signals allowing for transactions speeds up to 100 kHz.

3.2.5 Multiple Display Configurations

Microsoft Windows* 2000, Windows* XP, and Windows* Vista operating systems

provide support for multi-monitor display. The CPU support s Dual Display Clone and

Extended Desktop (LVDS + VGA).

3.3 Thermal Sensor

There are several registers that need to be configured to support the uncore thermal

sensor functionality and SMI# generation. Customers must enable the Catastrophic

Trip Point as protection for the CPU. If the Catastrophic Trip Point is crossed, then the

CPU will instantly turn off all clocks inside the device. Customers may optionally enable

the Hot Trip Point to generate SMI#. Customers will be required to then write their own

SMI# handler in BIOS that will speed up the CPU (or system) fan to cool the part.

3.3.1 PCI Device 0, Function 0

The SMICMD register requires that a bit be set to generate an SMI# when the Hot Trip

point is crossed. The ERRSTS register can be inspected for the SMI alert.

Functional Description

34 Datasheet

3.4 Power Management

The CPU uncore has many permutations of possibly concurrently operating modes.

Care should be taken (Hardw are and Software) to disable unused sections of the silicon

when this can be done with sufficiently low performance impact. Refer to the ACPI

Specification, Rev3.0 for an overview of the system power states mentioned in this

section.

3.4.1 Main Memory Power Management

Table 3-18.Targeted Memory State Conditions

This section details the support provided by the CPU uncore corresponding to the

various processor/display/system ACPI states.

Table 3-19.Platform Sy stem States

Table 3-20.Processor Power States

Address Register

Symbol Register Name Default

Value Access

C8-C9 ERRST Error Status 0000h RWC/S, RO

CC-CDh SMICMD SMI Command 0000h RO, R/W

Mode Memory State with Internal Graphics

C0, C1 Dynamic memory rank power down

based on idle conditions

S3 Self Refresh Mode

S4 Memory power down (contents lost)

State Description

G0/S0 Full On

G1/S3-cold Suspend to RAM (STR). Context saved to memory (S3-Hot is not

supported)

G1/S4 Suspend to Disk (STD). All power lost (except wakeup on Intel NM10

Express Chipset).

G2/S5 Soft off. All power lost (except wake on Intel NM10 Express Chipset). Total

reboot.

G3 Hard off. All power (AC) removed from system.

State Description

C0 Full On

C1 Auto Halt

Datasheet 35

Functional Description

Table 3-21.Graphics Processing Unit

3.4.2 Interface Power States Supported

Table 3-22.Main Memory States

3.4.3 State Combinations

Table 3-23.G, S and C State Combinations

Table 3-24.D, S and C State Combinations

3.4.4 System Suspend States

This group is the system states that are at a lower power level than S0. This represents

long wakeup latency but lower power states that are used as suspend states.

State Description

D0 Display active

D3 Power-off display

State Description

Power up CKE asserted. Active mode.

Pre-charge power down CKE deasserted (not self-refresh) with all banks closed.

Active power down CK E deas serted (not self-refresh) with minimum one bank

active.

Global (G)

state Sleep (S)

state Processor

state System

clocks Description

G0 S0 C0 Full on On Full on

G0 S0 C1 Auto-Halt On Auto Halt

G1 S3 power-off - Off, except

RTC Suspend to

RAM

G1 S4 power-off - Off, except

RTC Suspend to

Disk

G1 S5 power-off - Off, except

RTC Soft off

G3 NA power-off - Power-off Hard off

Display (D) Sleep State

(S) CPU State

D0 S0 C0 Full on, displaying

D0 S0 C1 Auto-Halt, displaying

D3 S0 C0-1 Not displaying

D3 S3 --- Not displaying

D3 S4 --- Not displaying

Functional Description

36 Datasheet

3.4.4.1 S1 - Power and clock on Standby to RAM

Not supported.

3.4.4.2 S3 - Standby to RAM

Supported.

3.4.4.3 S4/S5 - Standby to Disk/Soft-Off

Supported.

Datasheet 37

Electrical Specifications

4 Electrical Specifications

This chapter contains signal group descriptions, absolute maximum ratings, voltage

identification and power sequencing. The chapter also includes DC and AC

specifications, including timing diagrams.

4.1 Power and Ground Balls

The processor has VCC* and VSS (ground) inputs for on-chip power distribution. All

power balls must be connected to their respective processor power planes, while all VSS

balls must be connected to the system ground plane. Use of multiple power and ground

planes is recommended to reduce I*R drop. The VCC balls must be supplied with the

voltage determined by the processor Voltage IDentifica tion (VID) signals.

4.2 Decoupling Guidelines

Due to its large number of transistors and high internal clock speeds, the processor is

capable of generating large current swings between low and full-power states. This

may cause voltages on power planes to sag below their minimum values, if bulk

decoupling is not adequate. Larger bulk storage (CBULK), such as electrolytic capacitors,

supply current during longer lasting changes in current demand (for example, coming

out of an idle condition). Similarly, capacitors act as a storage well for current when

entering an idle condition from a running condition. To keep voltages within

specification, output decoupling must be properly designed.

Caution: Design the board to ensure that the voltage provided to the processor remains within

the specifications. Failure to do so can result in timing violations or reduced lifetime of

the processor.

4.2.1 Voltage Rail Decoupling

The voltage regulator solution needs to provide:

•bulk capacitance with low effective series resistance (ESR).

•a low path impedance from the regulator to the CPU.

•bulk decoupling to compensate for large current swings generated during power-

on, or low-power idle state entry/exit.

The power delivery solution must ensure that the voltage an d current specifications are

met, as defined in Table 4-29. For further information regarding power delivery,

decoupling, and layout guidelines refer to the appropriate platform design guide.

Electrical Specifications

38 Datasheet

4.3 Processor Clocking

•BCLKP, BCLKN, HPL_CLKINP, HPL_CLKINN, EXP_CLKINP, EXP_CLKINN,

DPL_REFCLKINP, DPL_REFCLKINN

The processor utilizes differential clocks to generate the processor core(s) and uncore

operating frequencies, memory controller frequency, and other internal clocks. The

processor core frequency is determined by multiplying the processor core ratio by 200

MHz. Clock multiplying within the processor is provided by an internal phase locked

loop (PLL), which requires a constant frequency inpu t, with excepti on s for Spread

Spectrum Clocking (SSC). PLL Power Supply

An on-die PLL filter solution is implemented on the processor. Refer to Table 4-29 for

DC specifications and to the platform design guide for decoupling and routing

guidelines.

4.4 Voltage Identification (VID)

The VID specification for the processor is defined by the Voltage Regulator Down (VRD)

11.0 Design Guidelines. The processor uses seven voltage identification signals,

VID[6:0], to support automatic selection of voltages. Table 4-26 specifies the voltage

level corresponding to the state of VID[6:0]. A ‘1’ in this table refers to a high voltage

level and a ‘0’ refers to a low voltage level. Do take note of the VID pin mapping of the

processor to the VR chip. If the processor is not soldered on board (VID[6:0] =

1111111), or the voltage regulation circuit cannot supply the voltage that is requested,

the voltage regulator must disable itself. Refer to the Voltage Regulator Down (VRD)

11.0 Design Guidelines for further details.

VID signals are CMOS push/pull drivers. Refer to Table 4-33 for the DC specifications

for these signals. Individual processor VID values may be set during manufacturing so

that two devices at the same core frequency may have different VID settings.

The VR utilized must be capable of regulating its output to the value defined by the VID

values issued. DC specifications are included in Table 4-28 and Table 4-29.

VRD11.0 has 8 VID pins (VID[7:0]) compared to 7 VID pins for the processor. VRD11.0

VID[n] pin should be connected to processor VID[n-1] pin. VRD11.0 VID[0] pin should

be tied to Vss. Refer Table 4-27 for mapping details.

Datasheet 39

Electrical Specifications

Table 4-25.Voltage Identification Definition

VID6 VID5 VID4 VID3 VID2 VID1 VID0 VCC (V)

01000011.2000

01000101.1875

01000111.1750

01001001.1625

01001011.1500

01001101.1375

01001111.1250

01010001.1125

01010011.1000

01010101.0875

01010111.0750

01011001.0625

01011011.0500

01011101.0375

01011111.0250

01100001.0125

01100011.0000

01100100.9875

01100110.9750

01101000.9625

01101010.9500

01101100.9375

01101110.9250

01110000.9125

01110010.9000

01110100.8875

01110110.8750

01111000.8625

01111010.8500

01111100.8375

01111110.8250

10000000.8125

10000010.8000

10000100.7875

10000110.7750

10001000.7625

Electrical Specifications

40 Datasheet

4.5 Catastrophic Thermal Protection

The processor supports the THERMTRIP# signal for catastrophic thermal protection. An

external thermal sensor should also be used to protect the processor and the system

against excessive temperatures. even with the activation of THERMTRIP#, which halts

all processor internal clocks and activity, leakage current can be high enough such that

the processor cannot be protected in all conditions without the removal of power to the

processor. If the external thermal sensor detects a catastrophic processor temperature

of 125 degree Celsius (maximum), or the THERMTRIP# signal is asserted, the Vcc

supply to the processor must be turned off within 500 ms to prevent permanent silicon

damage due to the thermal runaway of the processor. THERMTRIP# functionality is not

ensured if the PWRGOOD signal is not asserted.

4.6 Reserved or Unused Signals

The following are the general types of reserved (RSVD) signals and connection

guidelines:

•RSVD - these signals should not be connected

•RSVD_TP - these signals should be routed to a test point

•RSVD_NCTF - these signals are non-critical to function and may be left un-

connected

10001010.7500

10001100.7375

10001110.7250

10010000.7125

10010010.7000

Table 4-26.VID Pin Mapping

Processor VID pin map to VRD11 VID pin

0 (tie to ground)

Table 4-25.Voltage Identification Definition

VID6 VID5 VID4 VID3 VID2 VID1 VID0 VCC (V)

Datasheet 41

Electrical Specifications

Arbitrary connection of these signals to VCC*, VSS*, or to any other signal (includin g

each other) may result in component malfunction. See Chapter 8 for a land listing of

the processor and the location of all reserved signals.

For reliable operation, always connect unused inputs or bi-directional signals to an

appropriate signal level. Unused active high inputs should be connected through a

resistor to ground (VSS). Unused outputs maybe left unconnected; however, this may

interfere with some Test Access Port (TAP) functions, complicate debug probing, and

prevent boundary scan testing. A resistor must be used when tying bi-directional

signals to power or ground. When tying any signal to power or ground, a resistor will

also allow for system testability. Resistor values should be within ±20% of the

impedance of the baseboard trace, unless otherwise noted in the appropriate platform

design guidelines.

4.7 Signal Groups

Signals are grouped by buffer type and similar characteristics as listed in Chapter 2.

The buffer type indicates which signaling technology and specifications apply to the

signals. All the differential signals, and selected DDR2 and Control Sideband signals

have On-Die Termination (ODT) resistors. There are some signals that do not have OD T

and need to be terminated on the board.

All Control Sideband Asynchronous signals are required to be asserted/deasserted for

at least eight BCLKs in order for the processor to recognize the proper signal state. See

Section 4.10 for the DC and AC specifications.

4.8 Test Access Port (TAP) Connection

Due to the voltage levels supported by other components in the Test Access Port (TAP)

logic, Intel recommends the processor be first in the TAP chain, followed by any other

components within the system. A translation buffer should be used to connect to the

rest of the chain unless one of the other components is capable of accepting an input of

the appropriate voltage. Two copies of each signal may be required with each driving a

different voltage level.

4.9 Absolute Maximum and Minimum Ratings

Table 4-28 specifies absolute maximum and minimum ratings. At conditions outside

functional operation condition limits, but within absolute maximum and minimum

ratings, neither functionality nor long-term reliability can be expected. If a device is

returned to conditions within functional operation limits after having been subjected to

conditions outside these limits (but within the absolute maximum and minimum

ratings) the device may be functional, but with its lifetime degraded depending on

exposure to conditions exceeding the functional operation condition limits.

Although the processor contains protective circuitry to resist damage from Electro-

Static Discharge (ESD), precautions should always be taken to avoid high static

voltages or electric fields.

Electrical Specifications

42 Datasheet

NOTES:

1. For functional operation, all processor electrical, signal quality, mechanical and thermal

specifications must be sat isfied.

2. Overshoot and undershoot voltage guidelines for input, output, and I/O signals are

outlined in Chapter 5. Excessive overshoot or undershoot on any signal will likely result in

permanent damage to the processor.

3. Storage temperature is applicable to storage conditions only. In this scenario, the

processor must not receive a clock, and no lands can be connected to a voltage bias.

Storage within these limits will not affect the long-term reliability of the device . For

functional operation, please refer to the processor case temperature specifications.

4. This rating applies to the processor and does not include any tray or packaging.

5. Failure to adhere to this specifi cation can affect the long-term reliability of the processor.

6. VCC is a VID based rail.1

7. These are pre-silicon estima tes and are subject to chan ge

Possible damage to the processor may occur if the processor temperature exceeds 150 °C. Intel

does not ensure functionality for parts that have exceeded temperature above 150 °C due to

specification violation.

Table 4-27.Processor Absolute Minimum and Maximum Ratin gs

Symbol Parameter Min Max Unit Notes1, 2, 7

VCC, VCCP Processor Core, LGI voltages with

respect to VSS -0.3 1.45 V 6

VCCSM, VCCCK_DDR Processor DDR voltage with respect

to VSS -0.3 2.25 V

VCCA Processor PLL voltage with respect

to VSS -0.3 1.45 V

VCCGFX Processor GFX voltage with respect

to VSS -0.3 1.55 V

VCCDLVD, VCCALVD Processor LVDS voltage with

respect to VSS -0.3 2.25 V

VCCA_DDR,

VCCACK_DDR Processor DDR PLL voltage with

respect to VSS -0.3 1.45 V

VCCRING_EAST,

VCCRING_WEST,

VCC_LGI_VID,

Processor DAC, GIO , LVDS, & LGIO

voltage with respect to VSS -0.3 1.45 V

VCCD_AB_DPL,

VCCD_HMPLL Processor DPLL, & HMPLL voltage

with respect to VSS -0.3 1.45 V

VCCSFR_AB_DPL Processor SFR DPLL voltage with

respect to VSS -0.3 2.25 V

VCCACRTDAC Processor CR T voltage wi th respect

to VSS -0.3 2.25 V

VCCSFR_DMIHMPLL Processor DMI SFR voltage with

respect to VSS -0.3 2.25 V

VCC_GIO Processor GIO volt age with respect

to VSS 3.135 3.465 V

TSTORAGE Storage temperature -40 85 °C3, 4, 5

VinAGTL+ AGTL+ Buffer DC Input Voltage

with Respect to VSS, -0.1 1.45 V

VinAsynch_CMOS CMOS Buffer DC Input V oltage with

Respect to VSS -0.1 1.45 V

Datasheet 43

Electrical Specifications

4.10 DC Specifications

This section lists the DC specifications for the processor and are valid only while

meeting the thermal specifications (as specified in Intel® Atom™ Processor D400 and

D500 Series Thermal Mechanical Design Guidelines, #322856-001), clock frequency,

and input voltag es. Table 4-29 lists the DC specifications for the processor and are valid

only while meeting specifications for junction temperature, clock frequency, and input

voltages. Care should be taken to read all notes associated with each parameter.

4.10.1 Flexible Motherboard Guidelines (FMB)

This is not applicable for Intel Atom Processor D400 and D500 Series on Pinetrail-D

platform.

4.10.2 Voltage and Current Specifications

The VCC tolerance for processor core should be ±50mV, inclusive of ripple, VR tolerance

(AC and DC) and transient (droop and overshoot). Since processor is soldered down

with no loadline and no dynamic VID, some legacy parameters are not present.

Figure 4-2.VCC Tolerance Band

Electrical Specifications

44 Datasheet

•Parameters not present for VCC:

— No socket loadline slope - SKT_LL

— No socket loadline tolerance band

— No maximum overshoot above VID (OS_AMP)

— No maximum overshoot time duration above VID (OS_TIME)

— No peak-to-peak ripple amplitude (RIPPLE)

— No thermal compensation voltage drift (THERMAL_DRIFT)

— No maximum DC test (current I_DC_MAX)

— No minimum DC test (current I_DC_MIN)

•Paramete rs present for VCC:

— Tolerance band (TOB) of ±50 mV

NOTES:

1. Unless otherwise noted, all specifications in this table are based on estimates and

simulations or empirical data . These spe cifi catio ns will be updated with characteriz ed data

from silicon measureme n ts at a later date.

2. Each processor is programmed with voltage identification value (VID), which is set at

manufacturing and cannot be altered. Individual VID values are calibrated during

manufacturing such that two processors at the same frequency may have different

settings within the VID range. Please note this differs from the VID employed by the

processor during a power management event.

3. These are pre-silicon estim a tes and are subject to chan ge.

Table 4-28.Processor Core Active and Idle Mode DC Voltage and Current Specifications

Symbol Parameter Min Typ Max Unit Note

VID VID Range 0.8 1.175 V

VCC VCC for processor core See Table 4-26 and Figure 4-2

0.800 - 1.175 V2, 3

VCC,BOOT Default VCC voltage for initial

power up 1.045 1.1 1.26 V

ICC ICC for processor core

Dual Core

Single Core 10.8

5.4

IAH ICC Auto-Halt

Dual Core

Single Core 6.5

3.25

dICC/DT VCC power supply current slew r ate

at the proc essor pin package

Dual Core

Single Core 5

2.5

A/µs

Datasheet 45

Electrical Specifications

The I/O buffer supply voltage should be measured at the processor package pins. The

tolerances shown in Table 4-29 are inclusive of all noise from DC up to 20 MHz. The

voltage rails should be measured with a bandwidth limited oscilloscope with a roll-off of

3 dB/decade above 20 MHz under all operating conditions. Table 4-29 indicates which

supplies are connected directly to a voltage regulator or to a filtered voltage rail. For

voltage r ails that are connected to a filter, they should be measured at the input of the

filter. If the recommended platform de coup ling guidelines cannot be met, the system

designer will have to make trade-offs between the voltage regulator out DC tolerance

and the decoupling performances of the capacitor network to stay within the voltage

tolerances listed below.

Table 4-29.Processor Uncore I/O Buffer Supply DC Voltage and Current Specifications

Symbol Parameter Min Typ Max Unit Note

VCCA Processor Core analog supply

voltag e (DC + AC specification) 1.425 1.5 1.575 V

ICCA Processor Core analog supply

current

Single Core

Dual Core 0.075

0.15

VCCGFX GFX supply voltage 0.9975 1.05 1.1025 V

ICCGFX GFX supply current 3.4A A

VCCDLVD, VCCALVD LVDS supply voltage 1.71 1.8 1.89 V

ICCDLVD, ICCALVD LVDS supply current 0.08 A

VCCA_DMI DMI analog supply voltage 0.9975 1.05 1.1025 V

VCCD_HMPLL HMPLL supply voltage 0.9975 1.05 1.1025

ICCA_DMI,

ICCD_HMPLL DMI analog and HMPLL supply

current 0.55 A

VCCSFR_DMIHMPLL,

VCCSFR_AB_DPL DMI & HMPLL & DPLL SFR supply

voltage 1.71 1.8 1.89 V

ICCSFR_DMIHMPLL,

ICCSFR_AB_DPL DMI & HMPLL SFR supply current 0.1721 A

VCCA_DDR,

VCCACK_DDR DDR analog supply voltage 0.9975 1.05 1.1025 V

ICCA_DDR,

ICCACK_DDR DDR analog supply current 1.32 A

VCCSM, VCCCK_DDR DDR supply voltage

DDR2

DDR3 1.71

1.425 1.8

1.5 1.89

1.575

ICC_DDR,

ICCCK_DDR DDR supply current 2.270 A

VCCRING_EAST,

VCCRING_WEST,

VCC_LGI_VID,

VCCD_AB_DPL

DAC, GIO, LVDS, LGIO, HMPLL

supply voltage 0.9975 1.05 1.1025 V

ICCRING_EAST,

ICCRING_WES DAC, GIO, LVDS, LGIO supply

current 0.24 A

ICCD_AB_DPL,

ICC_LGI_VID LGIO, DPLL supply current 0.07 A

VCC_GIO GIO supply voltage 3.135 3.3 3.465 V

Electrical Specifications

46 Datasheet

NOTE: Unless otherwise noted, all specifications in this table are based on estimates and

simulations or empirical data . These spe cifi catio ns will be updated with characteriz ed data

from silicon measureme n ts at a later date.

4.10.3 DC Specifications

Platform reference voltages at the top of Table 4-29 are specified at DC only. VREF

measurements should be made with respect to the supply voltage.

4.10.3.1 Input Clock DC Specification

NOTES:

1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subjec t to change.

2. Crossing voltage defined as instantaneous voltage when rising edge of CLKN equalize

CLKP. The crossing point m ust meet the absolute and relative crossing point specification

simultaneously.

4.10.3.2 DDR2/DDR3 DC Specifications

ICC_GIO GIO supply current 0.015 A

VCCACRTDAC CRT DAC supply voltage 1.71 1.8 1.89 V

ICCACRTDAC Display CRT DAC supply current 0.144 A

Table 4-29.Processor Uncore I/O Buffer Supply DC Voltage and Current Specification s

Symbol Parameter Min Typ Max Unit Note

Table 4-30.Input Clock s (BCLK, HPL_CLKIN, DPL_REFCLKIN, EXP_CLKIN) Differe n tial

Specification

Symbol Parameter Min Typ Max Units Notes1

VIL Input Low Voltage -0.30 0 V

VIH Input High Voltage 1.15 V

VCROSS Absolute crossing voltage 0.3 0.550 V 2,3

dVCROSS Range of crossing points 0.14 V

CIN Input Capacitance 1.0 3.0 pF

Table 4-31.DDR2 Signal Group DC Specifications (Sheet 1 of 2)

Symbol Parameter Min Typ Max Units Notes1,9

VIL(DC) Input Low Voltage DDR_VREF

- 0.2 V2,4,10

VIH(DC) Input High Voltage DDR_VREF

+ 0.2 V3,10

VIL(AC) Input Low Voltage DDR_VREF

- 0.25 V2,4,10

VIH(AC) Input High Voltage DDR_VREF

+ 0.25 V3,10

Datasheet 47

Electrical Specifications

NOTES:

1. Unless otherwise noted, all s pecifications in this table apply to all processor frequencies.

2. VIL is defined as the maximum voltage level at a receiving agent that will be interpreted as

a logical low value.

3. VIH is defined as the mini mum voltage lev el at a receiving agent that will be interpreted as

a logical high value.

4. VIH and VOH may experience excursions above VCCSM. However, input signal drivers must

comply with the signal quality specifications.

5. This is the pull down driver resistance. Refer to processor I/O Buffer Models for I/V

characteristics.

6. The minimum and maximum values for these signals are programmable by BIOS

7. DDR2 values are pre-silicon estimations and subject to change.

8. VCCSM varies with typical/min/max cases. Refer Table 4-29 for details.

9. Determined with 2x Buffer Strength Settings i nto a 50 to 0.5x VCCSM test load.

10. DDR_VREF could either be from external or internal reference voltage.

4.10.3.3 LGIO Signal DC Specification

NOTES:See notes in the n ext page

VOL Output Low Voltage

DDR2

DDR3 0.27

0.20

VOH Output High Voltage

DDR2

DDR3 1.47

1.22

V4,9

RON DDR2 Clock Buffer On

Resistance 22 Ω5

ILI Input Leakage Current 10 μA

VREF DDR Reference Voltage VCCSM / 2 VCCSM / 2 VCCSM / 2 8

CI/O DQ/DQS/DQSB DDR2 I/O

Pin Capacitance 3.5 3.5 3.6 pF

Table 4-31.DDR2 Signal Group DC Specifications (Sheet 2 of 2)

Symbol Parameter Min Typ Max Units Notes1,9

Table 4-32.GTL Signal Group DC Specifications

Symbol Parameter Min Typ Max Units Notes1

VCCP I/O Voltage 1 1.05 1.1 V

GTLREF GTL Reference Voltage 2/3 VCCP 2/3 V CCP V6

RODT On Die Termination 55 55 Ohm 10

VIH Input High Voltage GTLREF +

0.1 VCCP + 0.1 V 3,6

VIL Input Low Voltage -0.1 GTLREF - 0.1 V 2,4

VOH Output High Voltage VCCP - 0.1 VCCP V6

RTT Termination Resistance 20 55 70 Ohm 7

RON Buffer on Resistance 14 25 40 Ω5

ILI Input Leakage Current -100 100 μA8

CPAD Pad Capacitance 2.35 2.5 2.6 pF 9

Electrical Specifications

48 Datasheet

1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subjec t to change.

2. VIL is defined as the maximum voltage level at a receiving agent that wil l be interpreted as

a logical low value.

3. VIH is defin ed as the minimum vol tage level at a receiving agent that will be interpreted as

a logical high value.

4. VIH and VOH may experience excursions above VCCP.. However, input signal drivers must

comply with the signal quality specifications.

5. This is the pull-down driver resistance. Refer to processor I/O Buffer Models for I/V

characteristics. Measured at 0.31 * VCCP

. RON(min) = 0.4 * RTT, RON(typ) = 0.455 * RTT,

RON(max) = 0.51 * RTT. RTT typical value of 55 Ohm is used for RON typ/min/max

calculations.

6. GTLREF should be generated from VCCP

. with a 1% tolerance resistor divider. The VCCP

referred to in these specifications is the instantaneous VCCP.

7. RTT is the on-die termination resis tance measured at VOL of the AGTL+ output driver.

Measured at 0.31 * VCCP

. RTT i s co nnected to VCCP on die. Refer to processor I/O Buffer

Models for I/V characteristics.

8. Specified with on-die RON and RTT are turned off. Vin between 0 and VCCP.

9. CPAD includes die capacitance only. No package parasitic are included.

10. On die termination resistance, measured at 0.33 * VCCP

NOTES:

1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subjec t to change.

2. The VCCP referred to in these specifications is the instantaneous VCCP

3. Refer to the processor I/O Buffer Models for I/V characteristics.

4. Measured at Iout = -1.1mA.

5. Measured at Iout = 1.1mA.

6. For VIN between 0V and VCCP. Measured when driver is tri-stated.

7. CPAD1 includes die capacitance only for DPRSTP#, DPSLP#, BSEL[2:0], VID[6:0]. No

package parasitic are included.

8. CPAD2 includes die capacitance for all other CMOS input signals. No package parasitics are

included.

Table 4-33.Legacy CMOS Signal Group DC Specification

Symbol Parameter Min Typ Max Units Notes1

VCCP I/O Voltage 1.00 1.05 1.10 V

VIH Input High Voltage 0.7 * VCCP VCCP + 0.1 V 2

VIL Input Low Voltage -0.1 0 0.3 * VCCP V2, 3

VOH Output High Voltage 0.9 * VCCP VCCP VCCP + 0.1 V 2, 4

VOL Output Low Voltage -0.1 0.1 * VCCP V2, 5

ILI Input Leakage Current -100 100 uA 6

CPAD1 Pad Capacitance 2.35 2.5 2.6 pF 7

CPAD2 Pad Capacitance for CMOS

Input 0.85 1.0 1.05 pF 8

Datasheet 49

Electrical Specifications

NOTES:

1. Unless otherwi se noted, all sp ecifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subject to change.

2. Measured at 0.2V

3. VOH is determined by value of the external pull-up resistor to VCCP

. Refer to platform

design guide for details.

4. For VIN between 0V and VCCP.

5. CPAD includes die capacitance only. No package parasitic are included.

NOTES:

1. Unless otherwi se noted, all sp ecifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subject to change.

2. VIH and VOH may experience excursions above VCCP

. However, inpu t signal drivers must

comply with the signal quality specifications.

3. With respect to PAD input.

NOTES:

1. Unless otherwi se noted, all sp ecifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subject to change.

2. VIH may experience excursions above VCCP.. However, input signal drivers must comply with

the signal quality specifications.

Table 4-34.Open Drain Signal Group DC Specification

Symbol Parameter Min Typ Max Units Notes1

VOH Output High Voltage VCCP - 5% VCCP + 5% V 3

VOL Output Low Voltage -- 0.20 V

IOL Output Low Current 16 60 mA 2

ILI Input Leakage Current -200 200 uA 4

CPAD Pad Capacitance 1.8 2.1 2.6 pF 5

Table 4-35.PWROK and RSTIN# DC Specification

Symbol Parameter Min Typ Max Units Notes1

VIL Input Low Voltage -0.3 0.8 V 2

VIH Input High Voltage 2.7 3.6 V 2

LIInput Leakage Current 10 uA

CPAD1 Pad Capacitance 1.5 pF

Table 4-36.CPUPWRGOOD DC Specification

Symbol Parameter Min Max Units Notes1

VIL Input Low Voltage -0.1 0.3 * VCCP V

VIH Input High Voltage 0.7 * VCCP VCCP + 0.1 V 2

VHYS Hysterisis of Schmitt Trigger Inputs 100 -- mV

LIInput Current of Each I/O Pin -10 10 uA

CICapacitance of Each I/O Pin -- 1.5 pF

Electrical Specifications

50 Datasheet

4.10.3.4 DDR3_DRAM_PWROK DC Specification

NOTES:

1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subjec t to change.

2. VIH may experience excursions above VCCSM.. However, input signal drivers must comply

with the signal quality specifications.

4.10.3.5 JTAG DC Specification

NOTES:

1. Positive transitions must cross above VT+(max) to trigger input.

2. Negative transitions must cross below VT-(min) to trigger input.

3. Input low noise must not cross VT+(min).

4. Input high noise must not cross VT-(max).

5. Unless otherwise noted, all specifications in this table apply to all processor frequencies.

4.10.3.6 Display DC Specification

The Analog Video Signal DC Specifications are referred to the VESA Video Signal

Standard, version 1 revision 2.

Symbol Parameter Min Max Units Notes1

VIL Input Low Voltage - 0.29 V

VIH Input High Voltage 1.25 - V 2

LIInput leakage - 20 uA

Table 4-37.TAP Signal Group DC Specification

Symbol Parameter Min Typ Max Units Notes1

RPDGTL GTL mode pull-down

impedance (JTAG mode) 25 Ohm

VT- Input fall transition

threshold vo ltage 0.54* VCCP - 0.66* VCCP V2,4

VT+ Input rise transition

threshold vo ltage 0.74* VCCP - 0.86* VCCP V1,3

ILI Input Leakage Current 50 uA

Table 4-38.CRT_DDC_DATA. CRT_DDC_CLK, LDDC_DATA, LDDC_CLK, LCTLA_CLK, and

LCTLB_DATA DC Specification (Sheet 1 of 2)

Symbol Parameter

Standard mode

100kbits/s Units Notes1

Min Max

VIL Input Low Voltage -0.5 0.3 VCCGIO V

VIH Input High Voltage 0.7 VCCGIO 0.5 + VCCGIO V

Datasheet 51

Electrical Specifications

NOTES:

1. Unless otherwi se noted, all sp ecifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subject to change.

2. 3mA sink current.

3. 0.1 VCCGIO < Vi < 0.9 VCCGIO_ MAX

NOTES:

1. Unless otherwi se noted, all sp ecifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subject to change.

NOTES:

1. Unless otherwi se noted, all sp ecifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subject to change.

2. All LVDS active lanes must be terminated with 100 Ohm resistor for correct VOS

performance and measurement.

VOL1 Output Low Voltage - 1 0 0.4 V 2

LIInput Leakage Current -50 50 uA 3

CICapacitance -- 10 pF

Table 4-38.CRT_DDC_DATA. CRT_DDC_CLK , LDDC_DATA, LDDC_CLK, LCTLA_CLK, and

LCTLB_DATA DC Specification (Sheet 2 of 2)

Symbol Parameter

Standard mode

100kbits/s Units Notes1

Min Max

Table 4-39.CRT_HSYNC and CRT_VSYNC DC Specification

Symbol Parameter Min Typ Max Units Notes1

VOH Output High Voltage 2.4 -- VCCGIO V

VOL Output Low Voltage 0 -- 0.5 V

IOH Output High Current -- -- 8 mA

IOL Output Low Current -- -- 8 mA

Table 4-40.LVDS Interface DC Specification (functional operating range,

VCCLVD = 1.8V ±5%)

Symbol Parameter Min Typ Max Units Notes1

VOD Differential Output Voltage 250 350 450 mV 2

ΔVOD Change in VOD between

Complementary Output States 50 mV 2

VOS Offset Voltage 1.125 1.25 1.375 V 2

ΔVOS Change in VOS between

Complementary Output States 50 mV 2

IOS Output Short Circuit Current -3.5 -10 mA 2

IOZ Output TRI-STATE Current ±1 ±10 uA 2

Electrical Specifications

52 Datasheet

NOTES:

1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.

These are pre-silicon estimates and are subjec t to change.

2. IOL = 6 mA; IOH= 2 mA.

3. For power and unpowered devices.

Table 4-41.LVDD_EN, LBKLT_EN and LBKLT_CTL DC Specification

Symbol Parameter Min Typ Max Units Notes1

VOL Output Low Voltage 0 -- 0.4 V 2

VOH Output High Voltage VCCGIO -

0.5 -- VCCGIO V2

ILInput Leakage -50 -- 50 uA 3

Datasheet 53

Signal Quality Specifications

5 Signal Quality Specifications

Source synchronous data transfer requires the clean reception of data signals and their

associated strobes. Ringing below receiver thresholds, non-monotonic signal edges,

and excessive voltage swing will adversely affect system timings. Ringback and signal

non-monotonicity cannot be tolerated since these phenomena may inadvertently

advance receiver state machines. Excessive signal swings (overshoot and undershoot)

are detrimental to silicon gate oxide integrity, and can cause device failure if absolute

voltage limits are exceeded. Additionally, overshoot and undershoot can cause timing

degradation due to the build up of inter-symbol interference (ISI) effects.

For these reasons, it is important that the design ensures acceptable signal quality

across all systematic variations encountered in volume manufacturing.

Low Power Features

54 Datasheet

6 Low Power Features

This chapter provides information on power management topics.

6.1 Low Power States

The low states supported by the processor are described in this section.

6.1.1 Processor Core Low Power States

When the processor core is idle, low-power idle states (C-states) are used to save

power. More power savings actions are taken fo r numerically higher C -states. Howe ver,

higher C-states hav e longer exit and entry latencies. Resolution of C -states occur at the

thread, processor core, and processor core package level. Thread level C-states are

available if Hyper-Threading Technology is enabled.

6.1.1.1 Clock Control and Low-Power States

The processor core supports low power states at the thread level and core/package

level. Thread states (TCx) loosely correspond to ACPI processor core power states (Cx).

A thread may independently enter T C1/AutoHALT, TC1/MWAIT but this does not always

cause a power state transition. Only when both threads request a low-power state

(TCx) greater than the current processor core state will a transition occur. The central

power management logic ensures the entire processor core enters the new common

processor core power state. Package states are states that require external

intervention and typically map back to processor core power states. Package states for

processor core include Normal (C0, C1) states.

Table 6-42.Syste m States

State Description

G0/S0 Full On

G2/S5 Soft off. All power lost (except wakeup on Intel NM10 Express Chipset). Total

reboot. (swh - I changed to ecpd_2#)

G3 Mechanical/hard off. All power (AC and battery) (AC and battery) removed

from system.

Table 6-43.Processor Core Idle States

State Description

C0 Active mode, processor executing code.

C1 AutoHALT state.

Datasheet 55

Low Power Features

The processor core implements two software interfaces for requesting low power

states: MWAIT instruction extensions with sub-state hints and P_LVLx reads to the

ACPI P_BLK register block mapped in the processor core’s I/O address space. The

P_LVLx I/O reads are converted to equivalent MWAIT C-state requests inside the

processor core and do not directly result in I/O reads on the processor core bus. The

monitor address does not need to be setup before using the P_L VLx I/O read interface.

The sub-state hints used for each P_LVLx read can be configured in a software

programmable MSR by BIOS.

Entry and exit of C-states at the thread and core level are show in the following figure.

NOTES:

1. halt break = A20M# transition, INIT#, INTR, NMI, PREQ#, SMI# or APIC interrupt.

Figure 6-3.Idle Power Management Breakdown of the Processor Cores

Processor Package State

Core 1 State

Thread 1Thread 0

Core 0 State

Thread 1Thread 0

Figure 6-4.Thread and Core C-state

C 0

C 1

MWAIT C 1/Auto

Halt

Core

state

break

MWAIT

(C1)

HLT

break

HLT

instruction

Low Power Features

56 Datasheet

6.1.2 Processor Core C-states Description

The following are general rules for all core C-states, unless specified otherwise:

•A core C-State is determined by the lowest numerical thread state (e.g., Thread0

requests C0 while thread1 requests C1, resulting in a core C0 state).

•A core transitions to C0 state when:

— an interrupt occurs.

— there is an access to the monitored address if the state was entered via an

MWAIT instruction.

•For core C1, an interrupt directed toward a single thread wakes only that thread.

However, since both threads are no longer at the same core C-state, the core

resolves to C0.

•Any interrupt coming into the processor package may wake any core.

The following state descriptions assume that both threads are in common low power

state. For cases when only 1 thread is in a low power state, no change in power state

will occur.

6.1.2.1 Normal State (C0, C1)

This is the normal operating state for the processor core. The processor core remains in

the Normal state when the processor core is in the C0, C1/AutoHALT, or C1/MWAIT

state. C0 is the active execution state.

6.1.2.2 C1/AutoHALT Power Down State

C1/AutoHALT is a low-power state entered when one thread executes the HALT

instruction while the other is in the TC1 or greater thread state. The processor core will

transition to the C0 state upon occurrence of SMI#, INIT#, LINT00/LINT10 (NMI,

INTR), or internal bus interrupt messages. RSTINB will cause the processor core to

immediately initialize itself.

A System Management Interrupt (SMI) handler will return execution to either Normal

state or the AutoHALT power down state. See the Intel® 64 and IA-32 Arc h it ec tu res

Software Developer’s Manuals, Volume 3A/3B: System Programmer’s Guide for more

information.

While in AutoHalt power down state, the processor core will process bus snoops. The

processor core will enter an internal snoopable sub-state to process the snoop and then

return to the AutoHALT power down state.

Table 6-44.Coordination of Thread Low-power States at the Package/Core Level

Thread1\Thread0 TC0 TC1

TC0 Normal (C0) Normal (C0)

TC1 Normal (C0) AutoHalt (C1)

Datasheet 57

Low Power Features

6.1.2.3 C1/MWAIT Power Down State

C1/MWAIT is a low-power state entered when one thread executes the MWAIT (C1)

instruction while the other thread is in the TC1 or greater thread state. processor core

behavior in the MWAIT state is identical to the AutoHALT state except that Monitor

events can cause the processor core to return to the C0 state. See the Intel® 64 and

IA-32 Architectures Software Developer’s Manuals, Volume 2A: Instruction Set

Reference, A-M and Volume 2B: Instruction Set Reference, N-Z, for more information.

Table 6-45.Coordination of Core Power States at the Package Level

Package C-State Core 1

C0 C1 --

Core 0 C0 C0 C0 --

C1 C0 C1 --

Thermal Specifications and Design Considerations

58 Datasheet

7 Thermal Specifications and

Design Considerations

The processor requires a thermal solution to maintain temperatures within operating

limits as set forth in Section Thermal Specifications. Any attempt to operate the

processor outside these operating limits may result in permanent damage to the

processor and potentially other components in the system. As processor technology

changes, thermal management becomes increasingly crucial when building computer

systems. Maintaining the proper thermal environment is key to reliable, long-term

system operation.

A complete thermal solution includes both component and system level thermal

management features. Component level thermal solutions include active or passive

heatsink attached to the exposed processor die. The solution should make firm contact

to the die while maintaining processor mechanical specifications such as pressure. A

typical system level thermal solution may consist of a system fan used to evacuate or

pull air through the system. For more information on designing a component level

thermal solution, please refer to the appropriate Thermal and Mechanical Design

Guidelines (see Section 1.7). Alternatively, the processor may be in a fan-less system,

but would likely still use a multi-component heat spreader. Note that trading of thermal

solutions also involves trading performance.

7.1 Thermal Specifications

To allow for the optimal operation and long-term reliability of Intel processor-based

systems, the system/processor thermal solution should be designed such that the

processor remains within the m i nimum and maximum junction t e mperature (Tj)

specifications at the corresponding thermal design power (TDP) value listed in Table 7-

46. Thermal solutions not designed to provide this level of thermal capability may affect

the long-term reliability of the processor and system. For more details on thermal

solution design, refer to the appropriate Thermal and Mechanical Design Guidelines

(see Section 1.7).

The case temperature is defined at the geometric top center of the processor. Analysis

indicates that real applications are unlikely to cause the processor to consume the

theoretical maximum power dissipation for sustained time periods. Intel recommends

that complete thermal solution designs target the TDP indicated in Table 7-46 instead

of the maximum processor power consumption. The Intel Thermal Monitor feature is

designed to help protect the processor in the unlikely event that an application exceeds

the TDP recommendation for a sustained period of time. Fo r more details on the usage

of this feature, refer to Section Section 7.1.2. In all cases the Intel Thermal Monitor

feature must be enabled for the processor to remain within specification.

Datasheet 59

Thermal Specifications and Design Considerations

NOTES:

1. The TDP specification should be used to design the processor thermal solution. The TDP is

not the maximu m theoretical power the processor can generate.

2. Not 100% tested. These power specifications are determined by characterization of the

processor currents at higher temperatures and extrapolating the values for the

temperature indicated.

3. The Intel Thermal Monitor automatic mode must be enabled for the processor to operate

within specifications.

4. VCC is determined by processor VID[6:0].

5. Silicon projection.

The processor incorporates 3 methods of monitoring die temperature: Digital Thermal

Sensor, Intel Thermal Monitor, and the Thermal Diode. The Intel Thermal Monitor

(detailed in Section Section 7.1.2) must be used to determine when the maximum

specified processor junction temperature has been reached.

7.1.1 Thermal Diode

The processor incorporates an on-die PNP transistor whose base emitter junction is

used as a thermal “diode”, with its collector shorted to ground. The thermal diode can

be read by an off-die analog/digital converter (a thermal sensor) located on the

motherboard or a stand-alone measurement kit. The thermal diode may be used to

monitor the die temperature of the processor for thermal management or

instrumentation purposes but is not a reliable indication that the maximum operating

temperature of the processor has been reached. When using the thermal diode, a

temperature offset value must be read from a processor MSR and applied. See

Section 7.1.2 for more details. See Section Section 7.1.2 for thermal diode usage

recommendation when the PROCHOT# signal is not asserted.

The reading of the external thermal sensor (on the motherboard) connected to the

processor thermal diode signals will not necessarily reflect the temperature of the

hottest location on the die. This is due to inaccuracies in the external thermal sensor,

on-die temperature gr adients between the location of the thermal diode and the hottest

Table 7-46.Power Specifications for the Standard Voltage Processor

Symbol Processor

Number Core

Frequency Thermal Design

Power Unit Tj

min

(°C)

max

(°C) Notes

TDP D510

D410

D525

D425

1.66

1.80

<=13

<=10

<=13

<=10

0 100

100 1, 3, 4,

Symbol Parameter Min Typ Max Unit

PIDLE Idle Power D510

Idle Power D410

Idle Power D525

Idle Power D425

4.5

3.8

4.8

4.0

Thermal Specifications and Design Considerations

60 Datasheet

location on the die, and time based variations in the die temperature measurement.

Time based variations can occur when the sampling rate of the thermal diode (by the

thermal sensor) is slower than the rate at which the TJ temperature can c hange.

Offset between the thermal diode based temperature reading and the Intel Thermal

Monitor reading may be characterized using the Intel Thermal Monitor’s Automatic

mode activation of the thermal control circuit. This temperature offset must be taken

into account when using the processor thermal diode to implement power management

events. This offset is different than the diode Toffset value programmed into the

processor Model Specific Register (MSR).

Table 7-47 and Table 7-48 provide the diode interface and spe cifications. Transistor

model parameters shown in Table 7-48 providing more accurate temperature

measurements when the diode ideality factor is closer to the maximum or minimum

limits. Contact your external sensor supplier for their recommendation. The thermal

diode is separate from the Thermal Monitor’s thermal sensor and cannot be used to

predict the behavior of the Thermal Monitor.

NOTES:

1. Intel does not support or recommend operation of the thermal diode under reverse bias.

2. Characterized across a temperature range of 50–100°C.

3. Not 100% tested. Specified by design characterization.

4. The ideality factor, nQ, represents the deviation from ideal transistor model behavior as

exemplified by the equation for the collector current:

IC = IS * (e qVBE/nQkT –1)

where IS = saturation current, q = electronic charge, VBE = voltage across the transistor

base emitter junction (same nodes as VD), k = Boltzmann Constant, and T = absolute

temperature (Kelvin).

5. The series resistance, RT, provided in the Diode Model Ta ble (Table 7-48) can be used for

more accurate readings as needed.

Table 7-47.Thermal Diode Interface

Signal Name Pin/Ball Number Signal Description

THRMDA_1 D30 Thermal diode anode

THRMDA_2 C30 Thermal diode anode (for dual-core only)

THRMDC_1 E30 Thermal diode cathode

THRMDC_2 D31 Thermal diode cathode (for dual-core only)

Table 7-48.Thermal Diod e Parameters using Transistor Model

Symbol Parameter Min Typ Max Unit Notes

IFW Forward Bias Current 5 200 μA1

IE Emitter Current 5 200 μA1

nQ Transistor Ideality 0.997 1.001 1.015 2,3,4

Beta 0.25 0.65 2,3

RT Series Re sistance 2.79 4.52 6.24 Ω2,5

Datasheet 61

Thermal Specifications and Design Considerations

When calculating a temperature based on the thermal diode measurements, a number

of parameters must be either measured or assumed. Most devices measure the diode

ideality and assume a series resistance and ideality trim value, although are capable of

also measuring the series resistance. Calculating the temper ature is then accomplished

using the equations listed under Table 7-48. In most sensing devices, an expected

value for the diode ideality is designed-in to the temperature calculation equation. If

the designer of the temperature sensing device assumes a perfect diode, the ideality

value (also called ntrim) will be 1.000. Given that most diodes are not perfect, the

designers usually select an ntrim value that more closely matches the behavior of the

diodes in the processor. If the processor diode ideality deviates from that of the ntrim,

each calculated temperature will be offset by a fixed amount. This temperature offset

can be calculated with the equation:

Terror(nf) = Tmeasured * (1 - nactual/ntrim)

where Terror(nf) is the offset in degrees C, Tmeasured is in Kelvin, nactual is the

measured ideality of the diode, and ntrim is the diode ideality assumed by the

temperature sensing device.

7.1.2 Intel® Thermal Monitor

The Intel Thermal Monitor helps control the processor temperature by activating the

TCC (Thermal Control Circuit) when the processor silicon reaches its maximum

operating temperature. The temperature at which the Intel Thermal Monitor activates

the TCC is not user configur able. Bus traffic is snooped in the normal manner and

interrupt requests are latched (and serviced during the time that the clocks are on)

while the TCC is active.

With a properly designed and characterized thermal solution, it is anticipated that the

TCC would only be activated for very short periods of time when running the most

power intensive applications. The processor performance impact due to these brief

periods of TCC activation is expected to be minor and hence not detectable. An under-

designed thermal solution that is not able to prevent ex cessive activation of the TCC in

the anticipated ambient environment may cause a noticeable performance loss and

may affect the long-term reliability of the processor. In addition, a thermal solution that

is significantly under designed may not be capable of cooling the processor even when

the TCC is activ e continuously.

The Intel Thermal Monitor controls the processor temperature by modulating (starting

and stopping) the processor core clocks when the processor silicon reaches its

maximum operating temperature. The Intel Thermal Monitor uses two modes to

activate the TCC: automatic mode and on-demand mode. If both modes are activated,

automatic mode takes precedence.

Intel Thermal Monitor 1 (TM1) mode is selected by writing values to the MSRs of the

processor. After automatic mode is enabled, the TCC will activate only when the

internal die temperature reaches the maximum allowed value for operation.

Thermal Specifications and Design Considerations

62 Datasheet

When TM1 is enabled and a high temperature situation exists, the clocks will be

modulated by alternately turning the clocks off and on at a 50% duty cycle. Cy cle times

are processor speed dependent and will decrease linearly as processor core frequencies

increase. Once the temperature has returned to a non-critical level, modulation ceases

and TCC goes inactiv e. A small amount of hysteresis has been included to prevent rapid

active/inactive transitions of the TC C when th e processor temper ature is near the trip

point. The duty cycle is factory configured and cannot be modified. Also, automatic

mode does not require any additional hardware, software drivers, or interrupt handling

routines. Processor performance will be decreased by the same amount as the duty

cycle when the TCC is active.

The Intel Thermal Monitor automatic mode must be enabled throu gh BIOS for

the processor to be operating within specifications. Intel recommends TM1 b e

enabled on the processors.

The TCC m ay also be activ ated via on-demand mode. If bit 4 of the ACPI Intel Thermal

Monitor control register is written to a 1, the TCC will be activated immediately

independent of the proc e ss or temp erature. When using on-demand mode to activate

the TCC, the duty cycle of the clock modulation is programmable via bits 3:1 of the

same ACPI Intel Thermal Monitor control register. In automatic mode, the duty cy cle is

fixed at 50% on, 50% off, however in on-demand mode, the duty cycle can be

programmed from 12.5% on/ 87.5% off, to 87.5% on/12.5% off in 12.5% increments.

On-demand mode may be used at the same time automatic mode is enabled, ho wever,

if the system tries to enable the TCC via on-demand mode at the same time automatic

mode is enabled and a high temperature condition exists, automatic mode will take

precedence.

An external signal, PROCHOT# (processor hot) is asserted when the processor detects

that its temperature is above the thermal trip point. Bus snooping and interrupt

latching are also active while the TCC is active.

Besides the thermal sensor and thermal control circuit, the Intel Thermal Monitor also

includes one ACPI register, one performance counter register, three MSR, and one I/O

pin (PROCHOT#). All are available to monitor and control the state of the Intel Thermal

Monitor feature. The Intel Thermal Monitor can be configured to generate an interrupt

upon the assertion or deassertion of PROCHOT#.

If the platform thermal solution is not able to maintain the processor junction

temperature within the maximum specification, the system must initiate an orderly

shutdown to prevent damage.

If Intel Thermal Monitor automatic mode is disabled, the processor will be operating out

of specification. Regardless of enabling the automatic or on-demand modes, in the

event of a catastrophic cooling failure, the processor will automatically shut down when

the silicon has reached a temperature of approximately 125°C. At this point the

THERMTRIP# signal will go active. THERMTRIP# activation is independent of processor

activity and does not generate any bus cycles. When THERMTRIP# is asserted, the

processor core voltage must be shut down within the time specified in Chapter 4.

Datasheet 63

Thermal Specifications and Design Considerations

7.1.3 Digital Thermal Sensor

The processor also contains an on die Digital Thermal Sensor (DTS) that can be read

via an MSR (no I/O interface). Each core of the processor will have a unique digital

thermal sensor whose temperature is accessible via the processor MSRs. The DTS is the

preferred method of reading the processor die temperature since it can be located

much closer to the hottest portions of the die and can thus more accurately track the

die temperature and potential activation of processor core clock modulation via the

Thermal Monitor. The DTS is only valid while the processor is in the normal operating

state (the Normal package level low power state).

Unlike traditional thermal devices, the DTS will output a temperature relative to the

maximum supported operating temperature of the processor (TJ_max). It is the

responsibility of software to convert the relative temperature to an absolute

temperature. The temperature returned by the DTS will always be at or below TJ_max.

Catastrophic temperature conditions are detectable via an Out Of Spec status bit. This

bit is also part of the DTS MSR. When this bit is set, the processor is operating out of

specification and immediate shutdown of the system should occur. The processor

operation and code execution is not ensured once the activation of the Out of Spec

status bit is set.

The DTS-relative temperature readout corresponds to the Thermal Monitor 1(TM1)

trigger point. When the DTS indicates maximum processor core temperature has been

reached, the TM1 hardware thermal control mechanism will activ ate. The DT S and TM1

temperature ma y not correspond to the thermal diode reading since the thermal diode

is located in a separate portion of the die and thermal gradient between the individual

core DTS. Additionally, the thermal gradient from DTS to thermal diode can vary

substantially due to changes in processor power, mechanical and thermal attach, and

software application. The system designer is required to use the DTS to ensure proper

operation of the processor within its temperature operating specifications.

Changes to the temperature can be detected via two progr ammable thresholds located

in the processor MSRs. These thresholds have the capability of generating interrupts

via the core's local APIC. Refer to the Intel® 64 and IA-32 Architectures Software

Developer's Manuals for specific register and programming details.

Note: The Digital Thermal Sensor (DTS) accuracy is in the order of -5°C to +10°C around

100°C. I deteriorates to -10°C to +15°C at 50°C. The DTS temperature reading

saturates at some temperature below 50°C. Any DTS reading below 50°C should be

considered to indicate only a temperature below 50°C and not a specifi c temperature.

External thermal sensor with “BJT” model is required to read thermal diode

temperature if more accu rate temperature reading is needed.

7.1.4 Out of Specification Detection

Overheat detection is performed by monitoring the processor temperature and

temperature gradie nt. This feature is intended for graceful shut down before the

THERMTRIP# is activated. If the processor’s TM1 is triggered and the temperature

Thermal Specifications and Design Considerations

64 Datasheet

remains high, an “Out Of Spec” status and sticky bit are latched in the status MSR

refer to the RS - Intel® Atom™ Processor D400 and D500 Series BIOS Writer’s Guide.

7.1.5 PROCHOT# Signal Pin

An external signal, PROCHOT# (processor hot), is asserted when the processor die

temperature has reached its maximu m operating temperature. If TM1 is enabled, then

the TCC will be active when PROCHO T# is asserted. The processor can be configured to

generate an interrupt upon the assertion or deassertion of PROCHOT#. Refer to the

Intel® 64 and IA-32 Architectures Software Developer's Manuals and RS - Intel®

Atom™ Processor D400 and D500 Series BIOS Writer’s Guide for specific register and

programming details.

The processor implements a bi-directional PROCHOT# capability to allow system

designs to protect various components from overheating situations. The PROCHOT#

signal is bi-directional in that it can either signal when the processor has reached its

maximum operating temperature or be driven from an external source to activate the

TCC. The ability to activate the TCC via PROCHOT# can provide a means for thermal

protection of system components.

Only a single PROCHOT# pin exists at a package level of the processor. When the core's

thermal sensor trips, PROCHOT# signal will be driven by the processor package. If TM1

is enabled, PROCHOT# will be asserted and only the core that is above TC C

temperature trip point will have its core clock modulated. It is important to note that

Intel recommends TM1 to be enabled.

PROCHOT# may be used for thermal protection of voltage regulators (VR). System

designers can create a circuit to monitor the VR temperature and activate the TCC

when the temperature limit of the VR is re ached. By asserting PROCHO T# (pulled-low)

and activating the TCC, the VR will cool down as a result of reduced processor power

consumption. Bi-directional PROCHOT# can allow VR thermal designs to target

maximum sustained current instead of maximum current. Systems should still provide

proper cooling for the VR and rely on bi-directional PROCHOT# only as a backup in case

of system cooling failure. The system thermal design should allow the power delivery

circuitry to operate within its temperature specification even while the processor is

operating at its TDP. With a properly designed and characterized thermal solution, it is

anticipated that bi-directional PROCHOT# woul d only be asserted for very short periods

of time when running the most power intensive applications. An under-designed

thermal solution that is not able to prevent excessive assertion of PROCHOT# in the

anticipated ambient environment may cause a noticeable performance loss.

Refer to the Pinetrail-D Platform Design Guide for details on implementing the bi-

directional PROCHOT# feature.

EDS - Vol 1 Intel Confidential 65

Package Mechanical Specifications and Ball Information

8 Package Mechanical

Specifications and Ball

Information

This chapter provides the package specifications, and ballout assignments.

8.1 Package Mechanical Specifications

8.1.1 Package Mechanical Drawings

Figure 8-5.Package Mechanical Drawings

Package Mechanical Specifications and Ball Information

66 Intel Confidential EDS - Vol 1

8.1.2 Package Loading Specifications

Package loading is 15lb max static compressive.

8.2 Processor Ballout Assignment

Figure 8-6 to Figure 8-9 are graphic representations of the processor ballout

assignments. Table 8-49 lists the ballout by signal name.

Figure 8-6.Package Pinmap (Top View, Upper-Left Quadrant)

12345678910111213141516

A--- --- RSVD_N

CTF_1 RSVD_N

CTF_11 --- --- XDP_RS

VD_1 --- XDP_RS

VD_8 --- VSS --- GTLREF --- --- VSS

B--- VCCRIN

G_WEST VCC VCCP VSS --- XDP_RS

VD_7 XDP_RS

VD_11 VSS XDP_RS

VD_15 XDP_RS

VD_14 XDP_RS

VD_16 VSS TCK --- VSS

CRSVD_N

CTF_7 VCCRIN

G_WEST VCCRIN

G_WEST --- XDP_RS

VD_3 XDP_RS

VD_5 XDP_RS

VD_4 XDP_RS

VD_10 --- XDP_RS

VD_12 XDP_RS

VD_17 VSS --- TMS --- TRST_B

D--- --- --- VCCP --- XDP_RS

VD_2 --- XDP_RS

VD_6 XDP_RS

VD_9 XDP_RS

VD_13 --- XDP_RS

VD_0 TDO TDI --- ---

ERSVD_N

CTF_9 VCCP --- --- IGNNE_

B--- SMI_B VSS --- VSS PRDY_B --- THERMT

RIP_B --- BPM_1B

_1 ---

F--- DMI_RX

N_0 DMI_RX

P_0 VSS --- --- --- STPCLK

_B --- LINT00 LINT10 --- BPM_1B

_3 --- PREQ_B ---

GDMI_TX

N_0 DMI_TXP

_0 DMI_RX

N_1 --- RSVD_1

6DPRSTP

_B --- INIT_B --- DPSLP_

BBPM_1B

_0 --- BPM_1B

_2 --- VSS ---

H--- VSS DMI_TXP

_1 DMI_RX

P_1 BSEL_1 FERR_B A20M_B VSS --- BCLKN VSS --- RSVD_4 --- VSS ---

JDMI_RX

N_2 DMI_TX

N_1 --- VSS --- --- --- --- --- BCLKP VSS --- VSS --- VSS ---

K--- DMI_RX

P_2 DMI_TXP

_2 VSS BSEL_0 BSEL_2 EXTBGR

EF VSS RSVD_T

P_4 --- VSS --- VSS --- VCC ---

LVSS DMI_TX

N_2 DMI_RX

N_3 --- PWROK RSVD_8 RSVD_6 EXP_RBI

AS EXP_IC

OMPI EXP_RC

OMPO RSVD_9 --- VSS VCC --- VCC

M--- DMI_TXP

_3 VSS DMI_RX

P_3 --- --- --- --- --- --- --- --- --- --- --- ---

NVSS DMI_TX

N_3 --- VSS VSS EXP_CL

KINP EXP_CL

KINN VSS RSVD_1

1RSVD_1

0RSVD_T

P_10 --- VSS VCC --- VCC

P--- RS V D _3 VSS V S S --- --- --- -- - -- - --- RSVD_T

P_11 --- VSS VSS --- VSS

R--- --- --- --- RSVD_T

P_3 RSVD_T

P_2 VSS VSS RSVD_1

3RSVD_1

2--- --- --- --- --- ---

EDS - Vol 1 Intel Confidential 67

Package Mechanical Specifications and Ball Information

Figure 8-7.Package Pinmap (Top View, Upper-Right Quadrant)

17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

--- --- VSS --- VCC_LGI

_VID ---VCC---VCC---VCC---

RSVD_N

CTF_0 RSVD_N

CTF_10 --- A

--- BPM_2B

_0 VSS BPM_2B

_1 BPM_2B

_3 VSS VCC VCC VCC VCC VCC --- VSSSEN

SE RSVD_N

CTF_5 RSVD_N

CTF_6 B

--- PROCH

OT_B --- BPM_2B

_2 VSS VSS --- VCC VSS VCC --- --- VCCSEN

SE THRMDA

_2 RSVD_N

CTF_8 C

--- RSVD_5 RSVD_T

P_5 RSVD_7 --- VSS VCC VCC --- VCC --- VCC --- THRMDA

_1 THRMDC

_2 D

RSVD_0 --- VSS --- VSS VCC --- VCC VSS --- VCC --- VID_6 THRMDC

_1 --- E

VSS --- VSS --- VCC VCC --- VSS VCC --- --- VSS VID_5 --- --- F

VSS --- VCC --- VCC VSS --- VCC --- --- VSS --- VID_4 VID_3 VSS G

VCC --- VCC --- VSS VCC --- VCC VSS LVDD_E

NVSS VID_2 VID_1 VID_0 --- H

VCC --- VCC --- VCC VCC --- --- --- --- --- LVD_VB

G--- RSVD_1

4VCCRIN

G_EAST J

VCC---VSS---VCC---

LDDC_C

LK LDDC_D

ATA LCTLB_

DATA VSS VSS VSS RSVD_1

5VSS --- K

--- VSS VCC --- VCC VSS LCTLA_

CLK VSS VSS LBKLT_

CTL LBKLT_

EN --- VSS CRT_DD

C_CLK CRT_DD

C_DATA L

--- --- --- --- --- --- --- --- --- --- --- VSS CRT_VS

YNC CRT_HS

YNC --- M

--- VSS VCC --- VCC LVD_VR

EFH LVD_VR

EFL VSS VSS LVD_A_

DATAN_

LVD_A_

DATAP_

1VSS --- CRT_IRT

NCRT_RE

--- VSS VSS --- VSS --- --- --- --- --- --- DAC_IR

EF CRT_BL

UE CRT_GR

EEN --- P

---------------LVD_IBG

LVD_A_

DATAN_

LVD_A_

DATAP_

0VSS LVD_A_

DATAN_

LVD_A_

DATAP_

2--- --- --- --- R

Package Mechanical Specifications and Ball Information

68 Intel Confidential EDS - Vol 1

Figure 8-8.Package Pinmap (Top View, Lower-Left Quadrant)

TVCCA_D

MI VCCA_D

MI --- --- --- --- --- --- --- VSS --- VCCGFX VCCGFX --- VCCGFX

U--- --- --- --- VCCA_D

DR VCCA_D

DR --- --- --- --- --- ---

V--- VCCA_D

DR VCCA_D

DR --- --- --- --- --- --- VCCD_H

MPLL --- VCCGFX VSS --- VSS

WCPUPW

RGOOD VSS --- VSS VSS VSS VSS HPL_CL

KINN HPL_CL

KINP VCCA_D

DR VCCA_D

DR --- VSS VCCGFX --- VCCGFX

Y--- VCCA VSS VSS --- --- --- --- --- --- --- --- --- --- --- ---

AA VCCSFR

_DMIHM

PLL VSS RSTINB --- DDR_A_

DQ_12 RSVD_T

P_12 RSVD_T

P_13 VSS DDR_A_

DM_1 VCCACK

_DDR VCCACK

_DDR --- VSS VSS --- VSS

AB --- DDR_A_

DQ_4 DDR_A_

DQ_5

DDR3_D

RAM_P

WROK

DDR_A_

DQ_13 DDR_A_

DQ_8 DDR_A_

DQ_9 DDR_A_

DQS_1 DDR_A_

DQ_14 --- RSVD_T

P_0 --- RSVD_T

P_1 --- DDR_A_

CK_5 ---

AC DDR_A_

DQ_1 VSS --- DDR_A_

DQ_0 --- --- --- --- --- VSS VSS --- DDR_A_

CKB_1 --- DDR_A_

CK_3 ---

AD --- DDR_A_

DQSB_0 DDR_A_

DQS_0 DDR_A_

DM_0 VSS DDR_A_

DQ_15 DDR_A_

DQSB_1 DDR_A_

DQS_2 --- DDR_A_

DQSB_2 DDR_A_

DQ_22 --- DDR_A_

CK_1 --- DDR_A_

CKB_3 ---

AE VSS DDR_A_

DQ_6 DDR_A_

DQ_7 --- DDR_A_

DQ_10 --- --- DDR_A_

DM_2 --- DDR_A_

DQ_23 VSS --- VSS --- VSS ---

AF --- --- DDR_A_

DQ_28 DDR_A_

DQ_2 --- --- DDR_A_

DQ_20 DDR_A_

DQ_21 --- DDR_A_

DQ_18 VSS --- DDR_A_

CK_4 --- DDR_A_

CKB_0 ---

AG --- DDR_A_

DQ_3 VSS --- DDR_A_

DQ_11 --- DDR_A_

DQ_17 DDR_A_

DQ_16 --- VSS DDR_A_

DQ_19 --- DDR_A_

CKB_4 --- DDR_A_

CK_0 ---

AH DDR_A_

DQ_24 DDR_A_

DQ_29 --- VSS --- VSS --- VSS DDR_A_

CKE_1 DDR_A_

CKE_0 --- DDR_A_

MA_11 DDR_A_

MA_8 DDR_A_

MA_5 --- ---

AJ RSVD_N

CTF_12 DDR_A_

DQ_25 DDR_A_

DM_3 --- --- DDR_A_

DQ_31 DDR_A_

DQ_27 DDR_A_

CKE_3 --- DDR_A_

MA_14 DDR_A_

MA_12 DDR_A_

MA_7 --- DDR_A_

MA_4 --- VSS

AK RSVD_N

CTF_13 RSVD_N

CTF_14 DDR_A_

DQSB_3 --- DDR_A_

DQS_3 DDR_A_

DQ_26 VCCCK_

DDR

DDR3_D

RAMRST

#VCCSM DDR_A_

CKE_2 DDR_A_

BS_2 DDR_A_

MA_9 VCCSM DDR_A_

MA_6 --- DDR_A_

MA_3

AL --- RSVD_N

CTF_17 RSVD_N

CTF_3 --- DDR_A_

DQ_30 --- VCCCK_

DDR --- VSS --- VSCCSM --- VSS --- --- VCCSM

12345678910111213141516

EDS - Vol 1 Intel Confidential 69

Package Mechanical Specifications and Ball Information

Figure 8-9.Package Pinmap (Top View, Lower-Right Quadrant)

Table 8-49.Processor Ball List by Ball Name (Sheet 1 of 9)

Pin Name Pin

Number Type Dir. Pin Name Pin

Number Type Dir.

A20M_B H7 CPU legacy I/O DDR_A_CKB_4 AG13 MEM_Clk_A O

BCLKN H10 CPU legacy I DDR_A_CKB_5 AB17 MEM_Clk_A O

BCLKP J10 CPU legacy I D DR_A_CKE_0 AH10 MEM_Cntl_A O

BPM_1B_0 G11 CPU legacy I/O DDR_A_CKE_1 AH9 MEM_Cntl_A O

BPM_1B_1 E15 CPU legacy I/O DDR_A_CKE_2 AK10 MEM_Cntl_A O

BPM_1B_2 G13 CPU legacy I/O DDR_A_CKE_3 AJ8 MEM_Cntl_A O

BPM_1B_3 F13 CPU legacy I/O DDR_A_CSB_0 AH22 MEM_Cntl_A O

BPM_2B_0 B18 CPU legacy I/O D DR_A_CSB_1 AK25 MEM_Cntl_A O

BPM_2B_1 B20 CPU legacy I/O DDR_A_CSB_2 AJ21 MEM_Cntl_A O

--- VCCGFX VCCGFX --- RSVD_T

P_8 --- --- --- --- --- --- --- VSS VCCACR

TDAC VCC_GI

--- --- --- --- --- VSS VSS VSS LVD_A_

CLKN LVD_A_

CLKP VSS --- --- --- --- U

--- VSS VCCGFX --- RSVD_T

P_9 --- --- --- --- --- --- VSS VSS VCCALV

D--- V

--- VCCGFX VCCGFX --- RSVD_T

P_7 DDR_A_

DQ_59 VSS DDR_A_

DQ_58 VSS VSS DDR_A_

DQ_63 VSS --- VSS VCCDLV

--- --- --- --- --- --- --- --- --- --- --- VSS DPL_RE

FCLKINN DPL_RE

FCLKINP --- Y

--- VSS VCCD_A

B_DPL --- RSVD_T

P_6 VSS DDR_A_

DQ_62 DDR_A_

DQ_56 VSS VSS DDR_A_

DQSB_7 --- VSS DPL_RE

FSSCLKI

DPL_RE

FSSCLKI

NN AA

DDR_A_

CKB_5 --- VSS --- VSS --- DDR_A_

DQ_61 DDR_A_

DQ_60 DDR_A_

DQ_57 DDR_A_

DM_7 DDR_A_

DQS_7 VSS VSS VSS --- AB

DDR_A_

CKB_2 --- VSS --- VSS DDR_A_

DQ_44 --- --- --- --- --- VSS --- VSS VCCSFR

_AB_DP

LAC

DDR_A_

CK_2 --- DDR_A_

DM_4 --- DDR_A_

DQ_39 DDR_A_

DQ_35 --- DDR_A_

DQ_43 DDR_A_

DQ_42 VSS DDR_A_

DQ_46 DDR_A_

DQ_55 DDR_A_

DQ_51 DDR_A_

DQ_50 --- AD

VSS --- DDR_A_

DQ_32 --- DDR_A_

DQ_38 VSS --- DDR_A_

DQ_40 --- DDR_A_

DQS_5 DDR_A_

DQ_47 --- DDR_A_

DQ_54 DDR_A_

DQS_6 VSS AE

VSS --- DDR_A_

DQ_37 --- VSS DDR_A_

DQ_34 --- VSS --- --- --- VSS DDR_A_

DQSB_6 DDR_A_

DM_6 --- AF

DDR_A_

DQ_36 --- DDR_A_

DQ_33 --- DDR_A_

DQSB_4 DDR_A_

DQS_4 --- DDR_A_

DQ_45 DDR_A_

DQ_41 --- DDR_A_

DQSB_5 --- --- DDR_A_

DQ_49 DDR_A_

DQ_48 AG

--- VSS DDR_A_

MA_0 DDR_A_

BS_1 --- DDR_A_

CSB_0 VSS DDR_A_

ODT_2 --- DDR_A_

ODT_1 --- VSS --- --- --- AH

--- DDR_A_

MA_1 --- DDR_A_

BS_0 DDR_A_

CSB_2 DDR_A_

CASB --- DDR_A_

MA_13 DDR_A_

CSB_3 DDR_RP

UDDR_A_

DM_5 --- DDR_A_

DQ_53 DDR_A_

DQ_52 VSS AJ

--- DDR_A_

MA_2 VCCSM DDR_A_

MA_10 DDR_A_

RASB DDR_A_

WEB VSS DDR_A_

ODT_0 DDR_A_

CSB_1 --- DDR_A_

ODT_3 DDR_RP

DRSVD_1 RSVD_N

CTF_15 RSVD_N

CTF_16 AK

--- --- VSS --- VCCSM --- VSS --- VCCSM --- --- DDR_VR

RSVD_N

CTF_2 RSVD_N

CTF_4 --- AL

17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

Package Mechanical Specifications and Ball Information

70 Intel Confidential EDS - Vol 1

BPM_2B_2 C20 CPU legacy I/O DDR_A_CSB_3 AJ25 MEM_Cntl_A O

BPM_2B_3 B21 CPU legacy I/O DDR_A_DM_0 AD4 MEM_Ad O

BSEL_0 K5 CPU legacy I/O DDR_A_DM_1 AA9 MEM_Ad O

BSEL_1 H5 CPU legacy I/O DDR_A_DM_2 AE8 MEM_Ad O

BSEL_2 K6 CPU legacy I/O DDR_A_DM_3 AJ3 MEM_Ad O

CPUPWRGOOD W1 CPU legacy I DDR_A_DM_4 AD19 MEM_Ad O

CRT_BLUE P29 CRTDAC O DDR_A_DM_5 AJ27 MEM_Ad O

CRT_DDC_CLK L30 CRTDAC I/O DDR_A_DM_6 AF30 MEM_Ad O

CRT_DDC_DATA L31 CRTDAC I/O DDR_A_DM_7 AB26 MEM_Ad O

CRT_GREEN P30 CRTDAC O DDR_A_DQ_0 AC4 MEM_Ad I/O

CRT_HSYNC M30 CRTDAC O DDR_A_DQ_1 AC1 MEM_Ad I/O

CRT_IRTN N30 CRTDAC O DDR_A_DQ_10 AE5 MEM_Ad I/O

CRT_RED N31 CRTDAC O DDR_A_DQ_11 AG5 MEM_Ad I/O

CRT_VSYNC M29 CRTDAC O DDR_A_DQ_12 AA5 MEM_Ad I/O

DAC_IREF P28 CRTDAC I/O DDR_A_DQ_13 AB5 MEM_Ad I/O

DDR_A_BS_0 AJ20 MEM_Cntl_A O DDR_A_DQ_14 AB9 MEM_Ad I/O

DDR_A_BS_1 AH20 MEM_Cntl_A O DDR_A_DQ_15 AD6 MEM_Ad I/O

DDR_A_BS_2 AK11 MEM_Cntl_A O DDR_A_DQ_16 AG8 MEM_Ad I/O

DDR_A_CASB AJ22 MEM_Cntl_A O DDR_A_DQ_17 AG7 MEM_Ad I/O

DDR_A_CK_0 AG15 MEM_Clk_A O DDR_A_DQ_18 AF10 MEM_Ad I/O

DDR_A_CK_1 AD13 MEM_Clk_A O DDR_A_DQ_19 AG11 MEM_Ad I/O

DDR_A_CK_2 AD17 MEM_Clk_A O DDR_A_DQ_2 AF4 MEM_Ad I/O

DDR_A_CK_3 AC15 MEM_Clk_A O DDR_A_DQ_20 AF7 MEM_Ad I/O

DDR_A_CK_4 AF13 MEM_Clk_A O DDR_A_DQ_21 AF8 MEM_Ad I/O

DDR_A_CK_5 AB15 MEM_Clk_A O DDR_A_DQ_22 AD11 MEM_Ad I/O

DDR_A_CKB_0 AF15 MEM_Clk_A O DDR_A_DQ_23 AE10 MEM_Ad I/O

DDR_A_CKB_1 AC13 MEM_Clk_A O DDR_A_DQ_24 AH1 MEM_Ad I/O

DDR_A_CKB_2 AC17 MEM_Clk_A O DDR_A_DQ_25 AJ2 MEM_Ad I/O

DDR_A_CKB_3 AD15 MEM_Clk_A O DDR_A_DQ_28 AF3 MEM_Ad I/O

DDR_A_DQ_29 AH2 MEM_Ad I/O DDR_A_DQ_8 AB6 MEM_Ad I/O

DDR_A_DQ_3 AG2 MEM_Ad I/O DDR_A_DQ_9 AB7 MEM_Ad I/O

DDR_A_DQ_30 AL5 MEM_Ad I/O DDR_A_DQS_0 AD3 MEM_Ad O

DDR_A_DQ_31 AJ6 MEM_Ad I/O DDR_A_DQS_1 AB8 MEM_Ad O

DDR_A_DQ_32 AE19 MEM_Ad I/O DDR_A_DQS_2 AD8 MEM_Ad O

DDR_A_DQ_33 AG19 MEM_Ad I/O DDR_A_DQS_3 AK5 MEM_Ad O

DDR_A_DQ_34 AF22 MEM_Ad I/O DDR_A_DQS_4 AG22 MEM_Ad O

DDR_A_DQ_35 AD22 MEM_Ad I/O DDR_A_DQS_5 AE26 MEM_Ad O

DDR_A_DQ_36 AG17 MEM_Ad I/O DDR_A_DQS_6 AE30 MEM_Ad O

DDR_A_DQ_37 AF19 MEM_Ad I/O DDR_A_DQS_7 AB27 MEM_Ad O

Table 8-49.Processor Ball List by Ball Name (Sheet 2 of 9)

Pin Name Pin

Number Type Dir. Pin Name Pin

Number Type Dir.

EDS - Vol 1 Intel Confidential 71

Package Mechanical Specifications and Ball Information

DDR_A_DQ_38 AE21 MEM_Ad I/O DDR_A_DQSB_0 AD2 MEM_Ad O

DDR_A_DQ_39 AD21 MEM_Ad I/O DDR_A_DQSB_1 AD7 MEM_Ad O

DDR_A_DQ_4 AB2 MEM_Ad I/O DDR_A_DQSB_2 AD10 MEM_Ad O

DDR_A_DQ_40 AE24 MEM_Ad I/O DDR_A_DQSB_3 AK3 MEM_Ad O

DDR_A_DQ_41 AG25 MEM_Ad I/O DDR_A_DQSB_4 AG21 MEM_Ad O

DDR_A_DQ_42 AD25 MEM_Ad I/O DDR_A_DQSB_5 AG27 MEM_Ad O

DDR_A_DQ_43 AD24 MEM_Ad I/O DDR_A_DQSB_6 AF29 MEM_Ad O

DDR_A_DQ_44 AC22 MEM_Ad I/O DDR_A_DQSB_7 AA27 MEM_Ad O

DDR_A_DQ_45 AG24 MEM_Ad I/O DDR_A_MA_0 AH19 MEM_Cntl_A O

DDR_A_DQ_46 AD27 MEM_Ad I/O DDR_A_MA_1 AJ18 MEM_Cntl_A O

DDR_A_DQ_47 AE27 MEM_Ad I/O DDR_A_MA_10 AK20 MEM_Cntl_A O

DDR_A_DQ_48 AG31 MEM_Ad I/O DDR_A_MA_11 AH12 MEM_Cntl_A O

DDR_A_DQ_49 AG30 MEM_Ad I/O DDR_A_MA_12 AJ11 MEM_Cntl_A O

DDR_A_DQ_5 AB3 MEM_Ad I/O DDR_A_MA_13 AJ24 MEM_Cntl_A O

DDR_A_DQ_50 AD30 MEM_Ad I/O DDR_A_MA_14 AJ10 MEM_Cntl_A O

DDR_A_DQ_51 AD29 MEM_Ad I/O DDR_A_MA_2 AK18 MEM_Cntl_A O

DDR_A_DQ_52 AJ30 MEM_Ad I/O DDR_A_MA_3 AK16 MEM_Cntl_A O

DDR_A_DQ_53 AJ29 MEM_Ad I/O DDR_A_MA_4 AJ14 MEM_Cntl_A O

DDR_A_DQ_54 AE29 MEM_Ad I/O DDR_A_MA_5 AH14 MEM_Cntl_A O

DDR_A_DQ_55 AD28 MEM_Ad I/O DDR_A_MA_6 AK14 MEM_Cntl_A O

DDR_A_DQ_56 AA24 MEM_Ad I/O DDR_A_MA_7 AJ12 MEM_Cntl_A O

DDR_A_DQ_57 AB25 MEM_Ad I/O DDR_A_MA_8 AH13 MEM_Cntl_A O

DDR_A_DQ_58 W24 MEM_Ad I/O DDR_A_MA_9 AK12 MEM_Cntl_A O

DDR_A_DQ_59 W22 MEM_Ad I/O DDR_A_ODT_0 AK24 MEM_Cntl_A O

DDR_A_DQ_6 AE2 MEM_Ad I/O DDR_A_ODT_1 AH26 MEM_Cntl_A O

DDR_A_DQ_60 AB24 MEM_Ad I/O DDR_A_ODT_2 AH24 MEM_Cntl_A O

DDR_A_DQ_61 AB23 MEM_Ad I/O DDR_A_ODT_3 AK27 MEM_Cntl_A O

DDR_A_DQ_62 AA23 MEM_Ad I/O DDR_A_RASB AK21 MEM_Cntl_A O

DDR_A_DQ_63 W27 MEM_Ad I/O DDR_A_WEB AK22 MEM_Cntl_A O

DDR_A_DQ_7 AE3 MEM_Ad I/O DDR_RPD AK28 MEM_Ana I/O

DDR_RPU AJ26 MEM_Ana I/O LCTLB_DATA K25 LVDS I/O

DDR3_DRAM_PWROK AB4 MEM_Ana I LDDC_CLK K23 LVDS I/O

DDR_VREF AL28 MEM_Ana I LDDC_DATA K24 LVDS I/O

DMI_RXN_0 F2 3GIO_CTC_rx I LINT00 F10 CPU_sideband I

DMI_RXN_1 G3 3GIO_CTC_rx I LINT10 F11 CPU_sideband I

DMI_RXN_2 J1 3GIO_CTC_rx I LVD_A_CLKN U25 LVDS O

DMI_RXN_3 L3 3GIO_CTC_rx I LVD_A_CLKP U26 LVDS O

DMI_RXP_0 F3 3GIO_CTC_rx I LVD_A_DATAN_0 R23 LVDS O

DMI_RXP_1 H4 3GIO_CTC_rx I LVD_A_DATAN_1 N26 LVDS O

Table 8-49.Processor Ball List by Ball Name (Sheet 3 of 9)

Pin Name Pin

Number Type Dir. Pin Name Pin

Number Type Dir.

Package Mechanical Specifications and Ball Information

72 Intel Confidential EDS - Vol 1

DMI_RXP_2 K2 3GIO_CTC_rx I LVD_A_DATAN_2 R26 LVDS O

DMI_RXP_3 M4 3GIO_CTC_rx I LVD_A_DATAP_0 R24 LVDS O

DMI_TXN_0 G1 3GIO_CTC_tx O LVD_A_DATAP_1 N27 LVDS O

DMI_TXN_1 J2 3GIO_CTC_tx O LVD_A_DATAP_2 R27 LVDS O

DMI_TXN_2 L2 3GIO_CTC_tx O LVD_IBG R22 LVDS I/O

DMI_TXN_3 N2 3GIO_CTC_tx O LVD_VBG J28 LVDS O

DMI_TXP_0 G2 3GIO_CTC_tx O LVD_VREFH N22 LVDS I

DMI_TXP_1 H3 3GIO_CTC_tx O LVD_VREFL N23 LVDS I

DMI_TXP_2 K3 3GIO_CTC_tx O LVDD_EN H26 LVDS O

DMI_TXP_3 M2 3GIO_CTC_tx O RSVD_14 J30 I

DPL_REFCLKINN Y29 Display PLL I RSVD_15 K29 I

DPL_REFCLKINP Y30 Display PLL I PRDY_B E11 CPU_sideband I/O

DPRSTP_B G6 CPU_sideband I PREQ_B F15 CPU_sideband I/O

DPSLP_B G10 CPU_sideband I PROCHOT_B C18 CPU_legacy I/O

EXP_CLKINN N7 3GIO_GFX_clk I PWROK L5 MISC I/O

EXP_CLKINP N6 3GIO_GFX_clk I RSTINB AA3 MISC I

EXP_ICOMPI L9 3GIO_GFX_ana I RSVD_TP_0 AB11

EXP_RBIAS L8 3GIO_GFX_ana I/O RSVD_TP_1 AB13

EXP_RCOMPO L10 3GIO_GFX_ana I DDR3_DRAMRST# AK8

RSVD_12 R10 RSVD_TP_6 AA21

RSVD_13 R9 RSVD_TP_7 W21

EXTBGREF K7 CPU_legacy I RSVD_TP_8 T21

FERR_B H6 CPU_sideband O RSVD_TP_9 V21

GTLREF A13 CPU_legacy I DPL_REFSSCLKINN AA31 C lock for LVDS I

HPL_CLKINN W8 Host PLL I DPL_REFSSCLKINP AA30 Clock for LVDS I

HPL_CLKINP W9 Host PLL I RSVD_9 L11

IGNNE_B E5 CPU_sideband I/O RSVD_10 N10

INIT_B G8 CPU_sideband I/O RSVD_11 N9

LBKLT_CTL L26 LVDS O RSVD_TP_10 N11

LBKLT_EN L27 LVDS O RSVD_TP_11 P11

LCTLA_CLK L23 LVDS I/O RSVD_TP_12 AA6

RSVD_TP_13 AA7 VCC E27 PWR

RSVD_TP_2 R6 VCC F21 PWR

RSVD_TP_3 R5 VCC F22 PWR

RSVD_4 H13 VCC F25 PWR

RSVD_5 D18 VCC G19 PWR

RSVD_6 L7 VCC G21 PWR

RSVD_7 D20 VCC G24 PWR

RSVD_8 L6 VCC H17 PWR

Table 8-49.Processor Ball List by Ball Name (Sheet 4 of 9)

Pin Name Pin

Number Type Dir. Pin Name Pin

Number Type Dir.

EDS - Vol 1 Intel Confidential 73

Package Mechanical Specifications and Ball Information

RSVD_0 E17 VCC H19 PWR

RSVD_TP_4 K9 VCC H22 PWR

RSVD_TP_5 D19 VCC H24 PWR

SMI_B E7 CPU_sideband I/O VCC J17 PWR

STPCLK_B F8 CPU_sideband I VCC J19 PWR

TCK B14 CPU_legacy I/O VCC J21 PWR

TDI D14 CPU_legacy I/O VCC J22 PWR

TDO D13 CPU_legacy I/O VCC K15 PWR

RSVD_16 G5 RSVD VCC K17 PWR

THERMTRIP_B E13 CPU_sideband O VCC K21 PWR

THRMDA_1 D30 CPU_legacy I VCC L14 PWR

THRMDA_2 C30 CPU_legacy I VCC L16 PWR

THRMDC_1 E30 CPU_legacy O VCC L19 PWR

THRMDC_2 D31 CPU_legacy O VCC L21 PWR

TMS C14 CPU_legacy I/O VCC N14 PWR

TRST_B C16 CPU_legacy I/O VCC N16 PWR

VCC A23 PWR VCC N19 PWR

VCC A25 PWR VCC N21 PWR

VCC A27 PWR VCCP B3 PWR

VCC B23 PWR VCCP B4 PWR

VCC B24 PWR VCCP E2 PWR

VCC B25 PWR VCCP D4 PWR

VCC B26 PWR VCCRING_EAST J31 PWR

VCC B27 PWR VCCRING_WEST B2 PWR

VCC C24 PWR VCCRING_WEST C2 PWR

VCC C26 PWR VCCRING_WEST C3 PWR

VCC D23 PWR VCCSM AK13 PWR

VCC D24 PWR VCCSM AK19 PWR

VCC D26 PWR VCCSM AK9 PWR

VCC D28 PWR VCCSM AL11 PWR

VCC E22 PWR VCCSM AL16 PWR

VCC E24 PWR VCCSM AL21 PWR

VCCSM AL25 PWR VCCSFR_AB_DPL AC31 PWR

VCC_GIO T31 PWR VCCSFR_DMIHMPLL AA1 PWR

VCC_LGI_VID A21 PWR VID_0 H30 CPU_legacy O

VCCA Y2 PWR VID_1 H29 CPU_legacy O

VCCA_DDR U10 PWR VID_2 H28 CPU_legacy O

VCCA_DDR U5 PWR VID_3 G30 CPU_legacy O

VCCA_DDR U6 PWR VID_4 G29 CPU_legacy O

Table 8-49.Processor Ball List by Ball Name (Sheet 5 of 9)

Pin Name Pin

Number Type Dir. Pin Name Pin

Number Type Dir.

Package Mechanical Specifications and Ball Information

74 Intel Confidential EDS - Vol 1

VCCA_DDR U7 PWR VID_5 F29 CPU_legacy O

VCCA_DDR U8 PWR VID_6 E29 CPU_legacy O

VCCA_DDR U9 PWR VSS H27 VSS

VCCA_DDR V2 PWR VSS A11 VSS

VCCA_DDR V3 PWR VSS A16 VSS

VCCA_DDR V4 PWR VSS A19 VSS

VCCA_DDR W10 PWR RSVD_NCTF_0 A29 VSS

VCCA_DDR W11 PWR RSVD_NCTF_1 A3 VSS

VCCA_DMI T1 PWR RSVD_NCTF_10 A30 VSS

VCCA_DMI T2 PWR RSVD_NCTF_11 A4 VSS

VCCA_DMI T3 PWR VSS AA13 VSS

VCCALVD V30 PWR VSS AA14 VSS

VCCACK_DDR AA10 PWR VSS AA16 VSS

VCCACK_DDR AA11 PWR VSS AA18 VSS

VCCACRTDAC T30 PWR VSS AA2 VSS

VCCCK_DDR AK7 PWR VSS AA22 VSS

VCCCK_DDR AL7 PWR VSS AA25 VSS

VCCD_AB_DPL AA19 PWR VSS AA26 VSS

VCCD_HMPLL V11 PWR VSS AA29 VSS

VCCDLVD W31 PWR VSS AA8 VSS

VCCGFX T13 PWR VSS AB19 VSS

VCCGFX T14 PWR VSS AB21 VSS

VCCGFX T16 PWR VSS AB28 VSS

VCCGFX T18 PWR VSS AB29 VSS

VCCGFX T19 PWR VSS AB30 VSS

VCCGFX V13 PWR VSS AC10 VSS

VCCGFX V19 PWR VSS AC11 VSS

VCCGFX W14 PWR VSS AC19 VSS

VCCGFX W16 PWR VSS AC2 VSS

VCCGFX W18 PWR VSS AC21 VSS

VCCGFX W19 PWR VSS AC28 VSS

VCCSENSE C29 PWR VSS AC30 VSS

VCCSM AL25 PWR VSS B16 VSS

VSS AD26 VSS VSS B19 VSS

VSS AD5 VSS VSS B22 VSS

VSS AE1 VSS RSVD_NCTF_5 B30 VSS

VSS AE11 VSS RSVD_NCTF_6 B31 VSS

VSS AE13 VSS VSS B5 VSS

VSS AE15 VSS

Table 8-49.Processor Ball List by Ball Name (Sheet 6 of 9)

Pin Name Pin

Number Type Dir. Pin Name Pin

Number Type Dir.

EDS - Vol 1 Intel Confidential 75

Package Mechanical Specifications and Ball Information

VSS AE17 VSS VSS B9 VSS

VSS AE22 VSS RSVD_NCTF_7 C1 VSS

VSS AE31 VSS VSS C12 VSS

VSS AF11 VSS VSS C21 VSS

VSS AF17 VSS VSS C22 VSS

VSS AF21 VSS VSS C25 VSS

VSS AF24 VSS RSVD_NCTF_8 C31 VSS

VSS AF28 VSS VSS D22 VSS

VSS AG10 VSS RSVD_NCTF_9 E1 VSS

VSS AG3 VSS VSS E10 VSS

VSS AH18 VSS VSS E19 VSS

VSS AH23 VSS VSS E21 VSS

VSS AH28 VSS VSS E25 VSS

VSS AH4 VSS VSS E8 VSS

VSS AH6 VSS VSS F17 VSS

VSS AH8 VSS VSS F19 VSS

RSVD_NCTF_12 AJ1 VSS VSS F24 VSS

VSS AJ16 VSS VSS F28 VSS

VSS AJ31 VSS VSS F4 VSS

RSVD_NCTF_13 AK1 VSS VSS G15 VSS

RSVD_NCTF_14 AK2 VSS VSS G17 VSS

VSS AK23 VSS VSS G22 VSS

RSVD_NCTF_15 AK30 VSS VSS G27 VSS

RSVD_NCTF_16 AK31 VSS VSS G31 VSS

VSS AL13 VSS VSS H11 VSS

VSS AL19 VSS VSS H15 VSS

RSVD_NCTF_17 AL2 VSS VSS H2 VSS

VSS AL23 VSS VSS H21 VSS

RSVD_NCTF_2 AL29 VSS VSS H25 VSS

RSVD_NCTF_3 AL3 VSS VSS H8 VSS

RSVD_NCTF_4 AL30 VSS VSS J11 VSS

VSS AL9 VSS VSS J13 VSS

VSS B13 VSS VSS J15 VSS

VSS J4 VSS VSS T11 VSS

VSS K11 VSS VSS U22 VSS

VSS K13 VSS VSS U23 VSS

VSS K19 VSS VSS U24 VSS

VSS K26 VSS VSS U27 VSS

Table 8-49.Processor Ball List by Ball Name (Sheet 7 of 9)

Pin Name Pin

Number Type Dir. Pin Name Pin

Number Type Dir.

Package Mechanical Specifications and Ball Information

76 Intel Confidential EDS - Vol 1

VSS K27 VSS VSS V14 VSS

VSS K28 VSS VSS V16 VSS

VSS K30 VSS VSS V18 VSS

VSS K4 VSS VSS V28 VSS

VSS K8 VSS VSS V29 VSS

VSS L1 VSS VSS W13 VSS

VSS L13 VSS VSS W2 VSS

VSS L18 VSS VSS W23 VSS

VSS L22 VSS VSS W25 VSS

VSS L24 VSS VSS W26 VSS

VSS L25 VSS VSS W28 VSS

VSS L29 VSS VSS W30 VSS

VSS M28 VSS VSS W4 VSS

VSS M3 VSS VSS W5 VSS

VSS N1 VSS VSS W6 VSS

VSS N13 VSS VSS W7 VSS

VSS N18 VSS VSS Y28 VSS

VSS N24 VSS VSS Y3 VSS

VSS N25 VSS VSS Y4 VSS

VSS N28 VSS VSS T29 VSS

VSS N4 VSS VSSSENSE B29 PWR

VSS N5 VSS XDP_RSVD_8 A9 XDP I/O

VSS N8 VSS XDP_RSVD_9 D9 XDP I/O

VSS P13 VSS XDP_RSVD_10 C8 XDP I/O

VSS P14 VSS XDP_RSVD_11 B8 XDP I

VSS P16 VSS XDP_RSVD_12 C10 XDP I/O

VSS P18 VSS XDP_RSVD_13 D10 XDP I/O

VSS P19 VSS XDP_RSVD_14 B11 XDP I/O

VSS P21 VSS XDP_RSVD_15 B10 XDP I/O

VSS P3 VSS XDP_RSVD_16 B12 XDP I/O

VSS P4 VSS XDP_RSVD_17 C11 XDP I

VSS R25 VSS XDP_RSVD_0 D12 XDP I

VSS R7 VSS XDP_RSVD_1 A7 XDP I

VSS R8 VSS XDP_RSVD_2 D6 XDP I

XDP_RSVD_3 C5 XDP I DDR_A_DQ_26 AK6 MEM_AD I/O

XDP_RSVD_4 C7 XDP I DDR_A_DQ_27 AJ7 MEM_AD I/O

XDP_RSVD_5 C6 XDP I

Table 8-49.Processor Ball List by Ball Name (Sheet 8 of 9)

Pin Name Pin

Number Type Dir. Pin Name Pin

Number Type Dir.

EDS - Vol 1 Intel Confidential 77

Package Mechanical Specifications and Ball Information

XDP_RSVD_6 D8 XDP I

XDP_RSVD_7 B7 XDP I/O

RSVD_3 P2

RSVD_1 AK29 VSS

Table 8-49.Processor Ball List by Ball Name (Sheet 9 of 9)

Pin Name Pin

Number Type Dir. Pin Name Pin

Number Type Dir.

Debug Tool Specifications

78 Datasheet

9 Debug Tool Specifications

The ITP-XDP debug port connector is the recommended d ebug port f or platforms using

Intel Atom Processor D400 and D500 Series. Refer to the appropriate Debug Port

Design Guide and Platform Design Guide for more detailed information regarding debug

tools specifications. Contact your Intel representative for more information.

Datasheet 79

Testability

10 Testability

In Intel Atom Processor D400 and D500 Series, testability for Automated Test

Equipment (ATE) board level testing has been implemented as JTAG boundary scan.

10.1 JTAG Boundary Scan

The Intel Atom Processor D400 and D500 Series add Boundary Scan ability compatible

with the IEEE 1149.1-2001 Standard (Teset Access Port and Boundary-Scan

Architecture) specification.