CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1995 3-1
Semiconductor
Package
JEDEC TO-204AA
BOTTOM VIEW
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
2N6975 TO-204AA
2N6976 TO-204AA
2N6977 TO-204AA
2N6978 TO-204AA
NOTE: When ordering, use the entire part number.
COLLECTOR
(FLANGE)
EMITTER
GATE
C
E
G
Features
• 5A, 400V and 500V
•V
CE(ON) 2V
•T
FI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Applications
• Power Supplies
• Motor Drives
• Protection Circuits
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
April 1995
2N6975, 2N6976,
2N6977, 2N6978
5A, 400V and 500V N-Channel IGBTs
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified. 2N6975/2N6977
(Note 1) 2N6976/2N6978
(Note 1) UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES 400 500 V
Collector-Gate Voltage (RGE = 1MΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCGR 400 500 V
Reverse Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES(REV.) 5 5 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGE ±20 ±20 V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC5 5 A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 10 10 A
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD100 100 W
Power Dissipation Derating TC > +25oC 0.8 0.8 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to +150 -55 to +150 oC
NOTE:
1. JEDEC registered value.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
File Number 2297.2
3-2
Specifications 2N6975, 2N6976, 2N6977, 2N6978
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS SYMBOL TEST CONDITIONS
LIMITS
UNITS
2N6975/2N6977 2N6976/2N6978
MIN MAX MIN MAX
Collector-Emitter
Breakdown Voltage BVCES lC = 1 mA, VGE = 0 400
(Note 1) - 500
(Note 1) -V
Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2
(Note 1) 4.5
(Note 1) 2
(Note 1) 4.5
(Note 1) V
Zero Gate Voltage Collector
Current lCES VCE = 400V - 250
(Note 1) --µA
V
CE = 500V - - - 250
(Note 1) µA
TC = +125oC ----µA
V
CE = 400V - 1000
(Note 1) --µA
V
CE = 500V - - - 1000
(Note 1) µA
Gate-Emitter Leakage Current IGES VGE = ±20V, VCE = 0V - 100
(Note 1) - 100
(Note 1) ns
Reverse Collector-Emitter
Leakage Current IECS RGE = 0Ω, VEC = 5V - 5
(Note 1) -5
(Note 1) mA
Collector-Emitter On Voltage VCE(ON) IC = 5A, VGE = 10V - 2
(Note 1) -2
(Note 1) V
IC = 10A, VGE = 20V - 2.5 - 2.5 V
Gate-Emitter Plateau Voltage VGEP IC = 5A, VCE = 10V 3.4
(Note 1) 6.8
(Note 1) 3.4
(Note 1) 6.8
(Note 1) V
On-State Gate Charge QG(ON) IC = 5A, VCE = 10V 12
(Note 1) 25
(Note 1) 12
(Note 1) 25
(Note 1) nC
Turn-On Delay Time tD(ON) IC = 5A
VCE(CLP) = 300V
L = 50µH
TJ = +125oC
VGE = 10V
RG = 50Ω
50 Max ns
Rise Time tR50 Max ns
Turn-Off Delay Time tD(ON) 400 Max
(Note 1) ns
Fall Time tFI 2N6975
2N6976 1000 Max
(Note 1) ns
2N6977
2N6978 500 Max
(Note 1) ns
Turn-Off
Energy Loss per Cycle
(Off Switching Dissipation=
WOFF x Frequency)
WOFF IC = 5A
VCE(CLP) = 300V
L = 50µH
TJ = +125oC
VGE = 10V
RG = 50Ω
2N6975
2N6976 1000 Max
(Note 1) µJ
2N6977
2N6978 500 Max
(Note 1) µJ
Thermal Resistance
Junction-to-Case RθJC 1.25
(Note 1)
oC/W
NOTE:
1. JEDEC registered value.
3-3
2N6975, 2N6976, 2N6977, 2N6978
Typical Performance Curves
FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE
AS A FUNCTION OF JUNCTION TEMPERA TURE FOR
ALL TYPES
FIGURE 2. NORMALIZED THERMAL RESPONSE
CHARACTERISTICS FOR ALL TYPES
FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL
TYPES FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR
ALL TYPES
FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT FOR
ALL TYPES
FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTOR-
TO-EMITTER VOLTAGE FOR ALL TYPES
TC, JUNCTION TEMPERATURE (oC)
NORMALIZED GATE THRESHOLD
VGE =V
CE
IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50 0 +50 +100 +150
VOLTAGE
t, TIME (ms)
10
1.0
0.1
0.01
0.01 0.1 1.0 10 100 1000
ZθJC(t) = r(t)RθJC
D CURVES APPLY FOR POWER PULSE
TRAIN SHOWN READ TIME AT t1
TJ(PEAK) - TC = P(PEAK)ZθJC(t)
SINGLE PULSE
D = 0.05
D = 0.2
D = 0.5
EFFECTIVE TRANSIENT THERMAL
IMPEDANCE (NORMALIZED)
VGE, GATE-TO-EMITTER VOLTAGE (V)
ICE, COLLECTOR CURRENT (A)
10
7.5
5.0
2.5
00 2.5 7.55.0 10
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
+25oC
+125oC
-40oC
TC = +25oC
VGE = +6V
VGE = +5V
VGE = +4V
VGE = +10V
VGE = +8V
VGE = +7V
10
7.5
5.0
2.5
0012345
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
ICE, COLLECTOR CURRENT (A)
PULSE TEST
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX VGE = 10V
ICE, COLLECTOR CURRENT (A)
VCE, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
10
8
6
4
2
00 0.5 1.0 1.5 2.0 2.5 3.0
1200
1000
800
600
400
200
001020304050
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
f = 0.1MHz
CRSS
CISS
COSS
3-4
2N6975, 2N6976, 2N6977, 2N6978
FIGURE 7. TYPICAL INDUCTIVE SWITCHING WAVEFORMS PD: ALLOWABLE DISSIPATION
PC: CONDUCTION DISSIPATION
FIGURE 8. MAXIMUM OPERATING FREQUENCY vs
COLLECTOR CURRENT (TYPICAL)
FIGURE 9. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT
(REFER TO APPLICATION NOTES AN7254 AND AN7260)
FIGURE 10. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
VGE
VCE
WOFF =∫ IC * VCEdt
IC
fOP, MAXIMUM OPERATING FREQUENCY (kHz)
ICE, COLLECTOR CURRENT (A)
TC = oC100
fMAX2 = (PD - PC)/WOFF
2N6975
VGE = 10V
RG = 50Ω
RL = 300/ceΩ
L = 50µH
VCC = 300V
TJ = +150oC
fMAX1 = 0.05/tD(OFF)
140
120
100
80
60
40
20 12345678910
100
90
2N6976 2N6977
2N6978
TIME (µs)
500
375
250
125
0
10
8
6
4
0
2
IG (REF)
IG (ACT)
20 IG (REF)
IG (ACT)
80
COLLECTOR-EMITTER VOLTAGE
VCC = BVCES
GATE
EMITTER
VOLTAGE
RL = 100Ω
IG (REF) = 0.43mA
VGE = 10V
VCC = BVCES
0.75 BVCES
0.50 BVCES
0.25 BVCES
0.75 BVCES
0.50 BVCES
0.25 BVCES
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VGE, GATE-EMITTER VOLTAGE (V)
20V
0V
RGEN = 100Ω
1/RG = 1/RGEN + 1/RGE
RGE = 100Ω
L = 50µH
VCC
300V
+
RL
-
