Rev. A/AH
2007
-
11
-
13
MMBT2222A
TAITRON COMPONEN
T
S INCORPORATED www.taitroncomponents.com
Page 1
of 3
Tel: (800)
-
TAITRON (800)
-
824
-
8766 (661)
-
257
-
6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
SMD General Purpose
Transistor (NPN)
SMD General Purpose Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
Case: SOT-23, Plastic Package
Terminals: Solderable per MIL-STD-202G, Method 208
Weight: 0.008 gram
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description MMBT2222A Unit
Marking Code 1P
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current 0.6 A
350 mW
Ptot Power Dissipation above 25°C (note 1)
2.8 mW/° C
RθJA Thermal Resistance, Junction to Ambient 357 ° C /W
TJ Junction Temperature 150 ° C
TSTG Storage Temperature Range -55 to +150 ° C
Note: (1) Device mounted on FR-4 PCB 1.6’’ x 1.6’’ x 0.06’’
SOT-23
Rev. A/AH
2007
-
11
-
13
MMBT2222A
SMD General Purpose Transistor (NPN)
www.taitroncomponents.com Page 2
of 3
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
35 - VCE=10V, IC=0.1mA
50 - VCE=10V, IC=1mA
75 - VCE=10V, IC=10mA
35 - VCE=10V, IC=10mA
Ta=-55° C
100 300 VCE=10V, IC=150mA*
40 - VCE=10V, IC=500mA*
hFE D.C. Current Gain
50 -
VCE=1.0V, IC=150mA*
V(BR)CBO Collector-Base Breakdown Voltage 75 - V IC=10µA, IE=0
V(BR)CEO Collector-Emitter Breakdown Voltage* 40 - V IC=10mA, IB=0
V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0
- 0.3 IC=150mA, IB=15mA
VCEsat Collector-Emitter Saturation Voltage* - 1.0 V IC=500mA, IB=50mA
0.6 1.2 IC=150mA, IB=15mA
VBEsat Base-Emitter Saturation Voltage* - 2.0 V IC=500mA, IB=50mA
ICEX Collector Cut-off Current - 10 nA VEB=3V, VCE=60V
10 nA VCB=60V, IE=0
ICBO Collector Cut-off Current - 10 µA VCB=60V, IE=0,
Ta=125° C
IBL Base Cut-off Current - 20 nA VEB=3V, VCE=60V
IEBO Emitter Cut-off Current - 10 nA VEB=3V, IC=0
fT Current Gain-Bandwidth Product 300 - MHz VCE=20V, IC=20mA,
f=100MHz
Cobo Output Capacitance - 8.0 pF VCB=10V, f=1.0MHz,
IE=0
Cibo Input Capacitance - 25 pF VEB=0.5V, f=1.0MHz,
IC=0
NF Noise Figure - 4.0 dB VCE=10V, IC=100µA,
Rs=1kΩ, f=1kHz
rb’Cc Collector Base Time Constant - 150 ps VCB=20V, IC=20mA,
f=31.8 MHz
td Delay Time - 10
tr Rise Time - 25
IB1=15mA
IC=150mA
VCC=30V
VEB=0.5V
ts Storage Time - 225
tf Fall Time - 60
ns
IB1=IB2=15mA
IC=150mA
VCC=30V
*Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0%
Rev. A/AH
2007
-
11
-
13
MMBT2222A
SMD General Purpose Transistor (NPN)
www.taitroncomponents.com Page 3
of 3
Dimensions in mm
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
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SOT-23
