KA1M0280R - Fairchild Semiconductor

SPS KA1M0280R

32V

A9V

2.5R1R

1mA

0.1V

−

OVER VOLTAGE S/D

−

7.5V

25V

Thermal S/D

Power on reset

−

L.E.B

OSC

Vref Internal

bias

Good

logic

SFET

DRAIN

GND

SPS

The SPS product family is specially designed for an off-line

SMPS with minimal external components. The SPS consist of

high voltage power SenseFET and current mode PWM IC.

Included PWM controller features integrated fixed oscillator,

under voltage lock out, leading edge blanking, optimized gate

turn-on/turn-off driver, thermal shut down protection, over

voltage protection, and temperature compensated precision

current sources for loop compensation and fault protection

circuitry. Compared to discrete MOSFET and controller or

RCC switching converter solution, a SPS can reduce total

component count, design size, weight and at the same time

increase efficiency, productivity, and system reliability. It has

a basic platform well suited for cost effective design in either

a flyback converter or a forward converter.

FEATURES

•Precision fixed operating frequency (70kHz)

•Pulse by pulse over current limiting

•Over Current Protection

•Over Voltage Protection (Min. 23V)

•Internal thermal shutdown function

•Under voltage lockout

•Internal high voltage sense FET

•Auto restart

ORDERING INFORMATION

Device Package Operating Temperature

KA1M0280R TO-220F-4L −25°C to +85°C

TO-220F-4L

1.GND 2. DRAIN 3. VCC 4. FB

BLOCK DIAGRAM

Rev. B

 1999 Fairchild Semiconductor Corporation

KA1M0280R SPS

ABSOLUTE MAXIMUM RATINGS

NOTES:

1. Tj=25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L=51mH, VDD=50V, RG=25Ω, starting Tj=25°C

Characteristic Symbol Value Unit

Drain-source (GND) voltage (1) VDSS 800 V

Drain-Gate voltage (RGS=1MΩ)VDGR 800 V

Gate-source (GND) voltage VGS ±30 V

Drain current pulsed (2) IDM 8.0 ADC

Single pulsed avalanche energy (3) EAS 90 mJ

Avalanche current (4) IAS −A

Continuous drain current (TC=25°C) ID2.0 ADC

Continuous drain current (TC=100°C) ID1.3 ADC

Supply voltage VCC 30 V

Analog input voltage range VFB −0.3 to VSD V

Total power dissipation PD (watt H/S) 35 W

Derating 0.28 W/°C

Operating temperature TOPR −25 to +85 °C

Storage temperature TSTG −55 to +150 °C

SPS KA1M0280R

NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

ELECTRICAL CHARACTERISTICS (SFET part)

(Ta=25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit

Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA8000 − − V

Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V − − 50 µA

VDS=0.8Max., Rating,

VGS=0V, TC=125°C− − 200 µA

Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=1.0A −5.6 7.0 Ω

Forward transconductance (note) gfs VDS=50V, ID=1.0A 1.5 2.5 −mho

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz −250 −pF

Output capacitance Coss −52 −

Reverse transfer capacitance Crss −25 −

Turn on delay time td(on) VDD=0.5BVDSS, ID=2.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

−21 −nS

Rise time tr −28 −

Turn off delay time td(off) −77 −

Fall time tf −24 −

Total gate charge

(gate-source+gate-drain) Qg VGS=10V, ID=2.0A,

VDS=0.5BVDSS (MOSFET

switching time are

essentially independent of

operating temperature)

− − 60 nC

Gate-source charge Qgs −15 −

Gate-drain (Miller) charge Qgd −20 −

KA1M0280R SPS

NOTES:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

ELECTRICAL CHARACTERISTICS (Control part)

(Ta=25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit

REFERENCE SECTION

Output voltage (1) Vref Ta=25°C4.80 5.00 5.20 V

Temperature Stability (1)(2) Vref/∆T−25°C≤Ta≤+85°C−0.3 0.6 mV/°C

OSCILLATOR SECTION

Initial accuracy FOSC Ta=25°C61 67 73 kHz

Frequency change with temperature (2) ∆F/∆T−25°C≤Ta≤+85°C− ±5±10 %

PWM SECTION

Maximum duty cycle Dmax −74 77 80 %

FEEDBACK SECTION

Feedback source current IFB Ta=25°C, 0V≤Vfb≤3V 0.7 0.9 1.1 mA

Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4.0 5.0 6.0 µA

OVER CURRENT PROTECTION SECTION

Over current protection IL(max) Max. inductor current 1.05 1.2 1.35 A

UVLO SECTION

Start threshold voltage Vth(H) −14 15 16 V

Minimum operating voltage Vth(L) After turn on 910 11 V

TOTAL STANDBY CURRENT SECTION

Start current IST VCC=14V 0.1 0.3 0.45 mA

Operating supply current

(control part only) IOPR Ta=25°C612 18 mA

VCC zener voltage VZICC=20mA 30 32.5 35 V

SHUTDOWN SECTION

Shutdown Feedback voltage VSD −6.9 7.5 8.1 V

Thermal shutdown temperature (Tj) (1) TSD −140 160 −°C

Over voltage protection voltage VOVP −23 25 28 V

SPS KA1M0280R

TYPICAL PERFORMANCE CHARACTERISTICS

(These characteristic graphs are normalized at Ta=25°C)

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Figure 3. Operating Current Figure 4. Max. Inductor Current

Figure 5. Start up Current Figure 6. Start Threshold Voltage

KA1M0280R SPS

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(These characteristic graphs are normalized at Ta=25°C)

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

SPS KA1M0280R

TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(These characteristic grahps are normalized at Ta=25°C)

Figure 13. Soft Start Voltage Figure 14. Drain Source Turn-on Resistance

TRADEMARKS

ACEx™

CoolFET™

CROSSVOLT™

E2CMOSTM

FACT™

FACT Quiet Series™

FAST®

FASTr™

GTO™

HiSeC™

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.

As used herein:

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench™

QS™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

TinyLogic™

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

UHC™

VCX™