Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 5.90.2 4.90.2 Absolute Maximum Ratings 0.70.1 0.7+0.3 -0.2 Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2632, which is optimum for the pre-driver stage of a 40 to 60W output amplifier. 13.50.5 8.60.2 Features (Ta=25C) 0.45+0.2 -0.1 0.45+0.2 -0.1 Symbol Ratings Unit VCBO -150 V Collector to emitter voltage VCEO -150 V Emitter to base voltage VEBO -5 V Peak collector current ICP -100 mA Collector current IC -50 mA Collector power dissipation PC 1 W Junction temperature Tj 150 C Storage temperature Tstg -55 ~ +150 C Electrical Characteristics (1.27) (1.27) 1 2 3 (3.2) Parameter Collector to base voltage 2.540.15 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L-A1 Package (Ta=25C) Parameter Symbol Conditions min typ max Unit -1 A Collector cutoff current ICBO VCB = -100V, IE = 0 Collector to emitter voltage VCEO IC = -0.1mA, IB = 0 -150 V Emitter to base voltage VEBO IE = -10A, IC = 0 -5 V Forward current transfer ratio hFE * VCE = -5V, IC = -10mA 130 Collector to emitter saturation voltage VCE(sat) IC = -30mA, IB = -3mA Transition frequency fT VCB = -10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCE = -10V, IE = 0, f = 1MHz Noise voltage NV *h FE VCE = -10V, IC = -1mA, GV = 80dB Rg = 100k, Function = FLAT Rank classification Rank R S T hFE 130 ~ 220 185 ~ 330 260 ~ 450 106 450 -1 200 150 V MHz 5 pF 300 mV Transistor 2SA1124 PC -- Ta IC -- VCE -120 VCE=-5V Ta=25C -70 25C -100 0.8 0.6 0.4 IB=-500A -450A -400A -350A -300A -250A -200A -60 -50 -40 -150A -30 -100A -20 0.2 Collector current IC (mA) 1.0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) -2 -10 -3 -1 Ta=75C 25C - 0.1 -25C - 0.03 -1 -3 -10 -4 -6 -8 -10 -40 -12 0 - 0.4 -30 -100 Collector current IC (mA) - 0.8 -1.2 -1.6 -2.0 Base to emitter voltage VBE (V) fT -- IE 600 300 VCE=-5V Forward current transfer ratio hFE -30 - 0.01 - 0.1 - 0.3 -60 hFE -- IC IC/IB=10 - 0.3 -80 Collector to emitter voltage VCE (V) VCE(sat) -- IC -100 -25C 0 0 500 400 Ta=75C 300 25C -25C 200 100 0 - 0.1 - 0.3 VCB=-10V Ta=25C Transition frequency fT (MHz) 0 Ta=75C -20 -50A -10 0 Collector to emitter saturation voltage VCE(sat) (V) IC -- VBE -80 Collector current IC (mA) Collector power dissipation PC (W) 1.2 250 200 150 100 50 0 -1 -3 -10 -30 Collector current IC (mA) -100 1 3 10 30 100 Emitter current IE (mA) Cob -- VCB Collector output capacitance Cob (pF) 6 IE=0 f=1MHz Ta=25C 5 4 3 2 1 0 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) 107 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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