D A T E N A M E
APPROVED
DWG.NO.
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
H 0 4 - 0 0 4 - 0 7 b
7MBR20UF060
MS6M00819
1/16
Power Integrated Module
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any w ay wh atsoever fo r the use of any t h ird part y n o r used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
MS6M00819
DRAWN
CHECKED
CHECKED
A u g . - 0 6 - ' 0 4
A u g . - 0 6 - ' 0 4
K. Komatsu
O . Ikawa
K. Yamada
Y . S e k i a
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
2/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
D a t e C l a s s i -
f i c a t i o n I n d . C o n t e n t Applied
date D r a w n C h e c k e d C h e c k e d A p p r o ve d
Enactment I s s u e d
date
Revised Records
H 0 4 - 0 0 4 - 0 6 b
A u g . - 0 6 - ' 0 4
D e c . - 1 6 - ' 0 4
R e v i s i o n
a
Revised outline drawing
( P 3 / 1 6 )
Added the note (P4/16)
Revised VCE(sat),VF (P6/16)
Revised warning (P14/16)
K. K omat su
O . Ikawa
K. Yamada
Y . S e k i
O . Ikawa
K. Yamada
Y . S e k i
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
3/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
7MBR20UF060 Specification
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
Module only designed for mounting on PCB with 1.7±
0.3mm thickness a
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
4/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
3. Pin positions with torerance ( Unit : mm )
4. Drilling layout for PCB
a
P l e a s e refer to m o u n t i n g instructions (Tech nical R e p . No. :MT5F14628a ) w h e n you mount thi s p r o d u c t .
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
5/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
5 . Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified)
I t e m s Symbols C o n d i t i o n s Maximum
R a t i n g s U n i t s
C o l l e c t o r - E m i t t e r vo l t a g e VCES 600 V
Gat e-Emi t t e r volt ag e VG E S ±20 V
I c C o n t i n u o u s T c = 6 5 oC 20
T c = 2 5 oC 25
C o l l e c t o r c u r r e n t I c p 1 m s T c = 6 5 oC 40
T c = 2 5 oC 50
-Ic C o n t i n u o u s T c = 6 5 oC 20 A
C o l l e c t o r P o w e r D i s s i p a t i o n Pc 1 device 78 W
C o l l e c t o r - E m i t t e r vo l t a g e VCES 600 V
Gat e-Emi t t e r volt ag e VG E S ±20 V
I c C o n t i n u o u s T c = 6 5 oC 15
T c = 2 5 oC 19
C o l l e c t o r c u r r e n t I c p 1 m s T c = 6 5 oC 30
T c = 2 5 oC 28
C o l l e c t o r P o w e r D i s s i p a t i o n Pc 1 device 76 W
Average Output Current I o 50Hz/60Hz
sine wave 20 A
Surge Current (Non-Repetitive) I F S M T j = 1 5 0 oC , 1 0 m s 210 A
I 2t (Non-Repet it i ve) I 2t half sine wave 2 2 1 A2s
J u n c t i o n t e m p e r a t u r e T j 150 oC
Storage temperature T s t g - 4 0 ~ + 1 2 5 oC
I s o l a t i o n b e t w e e n t e r m i n a l a n d b a s e p l a t e (*1) Viso AC : 1min. 2 5 0 0 V
v o l t a g e b e t w e e n t h e r m i s t o r a n d o t h e r s (*2) 2 5 0 0 V
Mounting Screw Torque M4 1 . 3 ～ 1 . 7 N . m
( * 1 ) A l l t e r m i n a l s s h o u l d b e c o n n e c t e d t o g e t h e r w h e n i s o l a t i o n t e s t w i l l b e d o n e .
( * 2 ) T e r m i n a l T 1 a n d T 2 s h o u l d b e c o n n e c t e d t o g e t h e r . A n d a n o t h e r t e r m i n a l s
should be connected together and shorted to baseplate.
A
A
A
A
Inverter
Converter Brake
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
6/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
6. Electrical characteristics ( at Tj= 25oC unless otherwise specified) C h a r a c t e r i s t i c s
I t e m s Symbols Co nd i t i o n s min. typ. Max. Units
Z e r o g a t e v o l t a g e
Co l le c t or c ur r ent I CES VGE = 0 V, VCE
=
600 V - - 1.0 mA
Gate-Emitter leakage current I G E S VCE
= 0 V, VGE
=
±20 V - - 2 0 0 nA
Gate-Emitter
threshold voltage V
G E ( t h ) VCE
= 2 0 V , I c = 15 mA 4.5 6 . 0 7.5 V
Co l le c t or-E m it t e r V
CE(sat) T j = 2 5 ℃- 1.95 2.45
saturation voltage （
T e r m i n a l ）VGE = 15 V , Tj = 1 2 5 ℃- 2.35 a 2.85 a
V
CE(sat) I c = 2 0 A Tj = 2 5 ℃- 1.85 2.35
（Chip） T j = 1 2 5 ℃- 2.25 a 2.75 a
I n p u t c a p a c i t a n c e C i e s VGE = 0 V, VCE
=
10 V - 1500 - pF
f = 1 MHz
T u r n - o n t i m e ton Vcc= 300 V - 0.35 1.2
tr I c = 2 0 A - 0.12 0.6
tr(i) VGE = ±15 V - 0.08 - s
T u r n - o f f t i m e toff R G = 150 - 0.40 1.0
tf - 0.05 0.35
Forward on voltage VF T j = 2 5 ℃- 1.70 2.10
(Terminal) T j = 1 2 5 ℃- 1.75 a 2.15 a
VF T j = 2 5 ℃- 1.60 2.00
(Chip) T j = 1 2 5 ℃- 1.65 a 2.05 a
Re ve rs e re c overy t im e trr I F = 20 A - - 3 0 0 ns
Z e r o g a t e v o l t a g e
Co l le c t or c ur r ent I CES VGE = 0 V, VCE
=
600 V - - 1.0 mA
Gate-Emitter leakage current I G E S VCE
= 0 V, VGE
=
±20 V - - 2 0 0 nA
Gate-Emitter
threshold voltage V
G E ( t h ) VCE
= 2 0 V , I c = 8 mA 4.5 6 . 0 7.5 V
Co l le c t or-E m it t e r V
CE(sat) T j = 2 5 ℃- 2.10 2.60 a
saturation voltage （
T e r m i n a l ）VGE = 15 V , Tj = 1 2 5 ℃- 2.50 a 3.00 a
V
CE(sat) I c = 1 5 A Tj = 2 5 ℃- 2.00 2.50 a
（Chip） T j = 1 2 5 ℃- 2.40 a 2.90 a
I n p u t c a p a c i t a n c e C i e s VGE = 0 V, VCE
=
10 V - 900 - pF
f = 1 MHz
T u r n - o n t i m e ton Vcc= 300 V - 0.43 1.2
tr I c = 1 5 A - 0.18 0.6 s
T u r n - o f f t i m e toff VGE = ±15 V - 0.40 1.0
tf R G = 270 - 0.05 0.35
Re ve rs e re c overy t im e trr I F = 15 A - - 3 5 0 ns
Re ve rs e c urre n t I RRM VR = 600 V - - 1.00 mA
Forward on voltage VFM I F = 2 0 A c h i p - 1 . 1 - V
terminal - 1 . 2 1.5
Re ve rs e c urre n t I RRM VR = 800 V - - 1.0 mA
Re s i s t an c e R T = 25oC 4750 5000 5250 W
T =100oC - 495 -
B value B T = 25/50oC 3305 3375 3450 K
V
VI F = 20 A
V
Inverter
ConverterThermistor Brake
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
7/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
8. Indication on module
1 1 . D e f i n i t i o n s o f s w i t c h i n g t i m e
L
Vcc
Ic
V
CE
R
G
V
GE
V
GE
VCE
Ic
0V
0A
0V
10%
90%
10% 10%
90%
90%
0V
Ic
VCE
～
～
～
～
～
～
on
t
r
t
r(i)
t
off
t
f
t
rr
I
rr
t
9 . A p p l i c a b l e c a t e g o r y
T h i s s p e c i f i c a t i o n i s a p p l i e d t o P o w e r I n t e g r a t e d M o d u l e n a m e d 7 M B R 2 0 U F 0 6 0 .
1 0 . S t o r a g e a n d t r a n s p o r t a t i o n n o t e s
・T h e m o d u l e s h o u l d b e s t o r e d a t a s t a n d a r d t e m p e r a t u r e o f 5 t o 3 5 oC and
h um i di t y of 4 5 t o 75 % .
・Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
・Avoid exposure to corrosive gases and dust.
・Avoid excessive external force on the module.
・Store modules with unprocessed terminals.
・D o n o t d r o p o r o t h e r w i s e s h o c k t h e m o d u l e s w h e n t r a n s p o r t i n g .
12. Packing and Labeling
D i s p l a y o n t h e p a c k i n g b o x
‐
L o go o f p ro du c t i o n
‐
T y p e n a m e
‐
L o t . N o.
‐
Products quantitiy in a packing box
U. K.
□□□□□
7MBR20UF060
Lot.N o .
20A 600V
□
□
□
SerialN o .
7 . T h e r m a l r e s i s t a n c e c h a r a c t e r i s t i c s C h a r a c t e r i s t i c s
I t e m s Symbols C o n d i t i o n s min. typ. Max. Units
I n v e r t e r I G B T - - 1.65
T h e r m a l r e s i s t a n c e I n v e r t e r F W D - - 1.76
(1 devic e) R th(j-c) Brake IGBT - - 1.99 oC/ W
Brake diode - - 2.04
Con ve r t e r Di o d e - - 1.56
Co n t a c t Th e r m a l r e s i s t a n c e R th(c-f) w i t h Th e rm a l C om p o u nd (*) - 0.50 - oC/ W
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
保守廃止予定機種
Not recommend for new design.
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DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
8/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
Rel i abi lity Test Items
Test
cate-
go r ie s Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of sample
A c c e p t -
anc e
num b e r
1 Terminal Strength Pull force : 10N T e s t M e t h o d 4 0 1 5 ( 0 : 1 )
(Pull test) Test time : 10±1 sec. MethodⅠ
2 Mounting Strength Screw torque : 1.3 ~ 1.7 N･
m (M4) T e s t M e t h o d 4 0 2 5 ( 0 : 1 )
Test time : 10±1 sec. methodⅡ
3 Vibration Range of frequency : 0.1 ~ 500Hz T e s t M e t h o d 4 0 3 5 ( 0 : 1 )
Sweeping time : 15 min. Reference 1
A c c e l e r a t i o n :
100m/s
2 Condit ion code B
Sweeping direction : Each X,Y,Z axis
Test time : 3 hr. (1hr./direction)
4 Shock M a x i m u m a c c e l e r a t i o n :
9800m/s
2 T e s t M e t h o d 4 0 4 5 ( 0 : 1 )
Pulse width : 0.5msec. Condition code D
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. : 125±5 ℃T e s t M e t h o d 2 0 1 5 ( 0 : 1 )
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. : -40±5 ℃T e s t M e t h o d 2 0 2 5 ( 0 : 1 )
Storage Test duration : 1000hr.
3 Temperature Storage temp. : 85±2 ℃T e s t M e t h o d 1 0 3 5 ( 0 : 1 )
H u m i d i t y Relative humidity : 85±5% T e s t c o d e C
Storage Test duration : 1000hr.
4 Temperature T e s t M e t h o d 1 0 5 5 ( 0 : 1 )
Cycle Test temp. : Lo w t em p . - 40±5 ℃
H i g h t e m p . 1 2 5 ±5 ℃
RT 5 ~ 35 ℃
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
N u m b e r o f c y c l e s : 100 cycles
5 Thermal Shock +0 T e s t M e t h o d 3 0 7 5 ( 0 : 1 )
Test temp. : H i g h t e m p . 1 0 0
-5
℃method Ⅰ
+ 5 Condit ion code A
Low temp. 0
-0
℃
U s e d l i q u i d : W a t e r w i t h i c e a n d b o i l i n g w a t e r
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
N u m b e r o f c y c l e s : 10 cycles
Mechanical TestsEnvironment Tests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
9/1 6
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
Failure Criteria
Item Characteristic Symbol Failure criteria Unit Note
Lower limit Upper limit
Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(sat) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT VGE - USL×1.2 mV
resistance or VCE
FWD VF - USL×1.2 mV
Isolation voltage Viso Broken insulation -
Visual Visual inspection
inspection Peeling - The visual sample -
Plating
and the others LSL : Lower specified limit.
USL : Upper specified limit.
Note : EEEaaaccchhh pppaaarrraaammmeeettteeerrr mmmeeeaaasssuuurrreeemmmeeennnttt rrreeeaaaddd---ooouuutttsss ssshhhaaallllll bbbeee mmmaaadddeee aaafffttteeerrr ssstttaaabbbiiillliiizzziiinnnggg ttthhheee cccooommmpppooonnneeennntttsss
aaattt rrroooooommm aaammmbbbiiieeennnttt fffooorrr 222 hhhooouuurrrsss mmmiiinnniiimmmuuummm,,, 222444 hhhooouuurrrsss mmmaaaxxxiiimmmuuummm aaafffttteeerrr rrreeemmmooovvvaaalll fffrrrooommm ttthhheee ttteeessstttsss...
AAAnnnddd iiinnn cccaaassseee ooofff ttthhheee wwweeettttttiiinnnggg ttteeessstttsss,,, fffooorrr eeexxxaaammmpppllleee,,, mmmoooiiissstttuuurrreee rrreeesssiiissstttaaannnccceee ttteeessstttsss,,, eeeaaaccchhh cccooommmpppooonnneeennnttt
ssshhhaaallllll bbbeee mmmaaadddeee wwwiiipppeee ooorrr dddrrryyy cccooommmpppllleeettteeelllyyy bbbeeefffooorrreee ttthhheee mmmeeeaaasssuuurrreeemmmeeennnttt...
Reliability Test Items
Test
cate-
g o r i e s Test items Test methods and conditions
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of sample
A c c e p t -
an c e
n u m b e r
1 High temperature T e s t M e t h o d 1 0 1 5 ( 0 : 1 )
Reverse Bias Test temp. : Ta = 125±5 ℃
(Tj ≦
15 0 ℃)
Bias Voltage : VC = 0.8×VCES
Bias Meth od : Applied DC voltage to C-E
V G E = 0 V
Test duration : 1000hr.
2 High temperature T e s t M e t h o d 1 0 1 5 ( 0 : 1 )
Bias (for gate) Test temp. : Ta = 125±5 ℃
(Tj ≦
15 0 ℃)
Bias Voltage : VC = VGE = +20V or -20V
Bias Meth od : Applied DC voltage to G-E
V C E = 0 V
Test duration : 1000hr.
3 Intermitted ON time : 2 sec. T e s t M e t h o d 1 0 6 5 P<1%
Operating Life OFF time : 18 sec.
(Power cycle) Test temp. : Tj=100±5 deg
( for IGBT ) Tj ≦
150 ℃, Ta=25±5 ℃
N u m b e r o f c y c l e s : 8500 cycles
Endurance Tests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
10/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
R e l ia b i l i t y T e s t R e s u lt s
T e s t
cate-
g o r i e s Test items
Reference
n o r m s
EIAJ ED-4701
(Aug.-2001 edition)
N u m b e r
of tes t
sample
N u m b e r
o f f a i l u r e
sample
1 Terminal Strength T e s t M e t h o d 4 0 1 5 0
(Pull test) MethodⅠ
2 Mounting Strength T e s t M e t h o d 4 0 2 5 0
methodⅡ
3 Vibration T e s t M e t h o d 4 0 3 5 0
C o n d i t i o n c o d e B
4 Shock T e s t M e t h o d 4 0 4 5 0
C o n d i t i o n c o d e B
1 High Temperature Storage T e s t M e t h o d 2 0 1 5 0
2 Low Temperature Storage T e s t M e t h o d 2 0 2 5 0
3 Temperature Humidity T e s t M e t h o d 1 0 3 5 0
Storage T e s t c o d e C
4 Temperature Cycle T e s t M e t h o d 1 0 5 5 0
5 Thermal Shock T e s t M e t h o d 3 0 7 5 0
met hod Ⅰ
C o n d i t i o n c o d e A
1 High temperature Reverse Bias T e s t M e t h o d 1 0 1 5 0
2 High temperature Bias T e s t M e t h o d 1 0 1 5 0
( for gate )
3 Intermitted Operating Life T e s t M e t h o d 1 0 6 5 0
(Power cycling)
( for IGBT )
Mechanical Tests
EnvironmentTests
Endurance Tests
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
11/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
0
10
20
30
40
50
012345
[ Inverter ]
Coll e ctor c ur r en t vs . Col l ec t or-E m itter volt ag e
T j = 2 5 oC (typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
9V
1 1 V13V1 5 VV G E = 2 0 V
0
10
20
30
40
50
0 1 2 3 4 5
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125oC (typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
9 V
11V
13V1 5 VVGE=20V
0
10
20
30
40
50
012345
[ Inverter ]
Coll ector c u r r en t vs. Co llect or- E mitter voltage
VG E =1 5V ( t y p . ) / c h ip
C o l le c t or c u rr e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
Tj=25 o CT j = 1 2 5 oC
2
4
6
8
10
1 0 15 20
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
T j = 2 5 oC (typ.) / chip
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter vol tage : VGE [ V ]
1 0 A
2 0 A
Ic=40A
1 0 0
1000
0 5 10 1 5 20 2 5 3 0 35
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V G E = 0 V , f = 1 M H z , T j = 2 5 oC
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
C i e s
C r e s
C o e s
0
100
200
300
400
500
0
5
10
15
20
25
020 40 6 0 80 10 0 120
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=15A, Tj= 25oC
Collector - Emitter voltage : VCE [ V ]
Gate-Emittervoltage : VGE [V]
Gat e c h a r g e : Q g [ nC ]
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
12/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
0
0 . 5
1
1 . 5
2
2 . 5
01 0 2 0 30 40 50
[ Inverter ]
Switching loss vs. Coll ector current (t yp.)
V c c = 3 0 0 V , V G E = + - 1 5 V , R g = 1 5 0
Switching loss : Eon, Eoff, Err [ mJ / pulse ]
C o l l e c t o r c u r r e n t : I c [ A ]
Eon 125℃
Eon 25℃
Eoff 125℃
Eoff 25℃
Err 125℃
Err 25℃
0 . 4
0 . 5
0 . 6
0 . 7
0 . 8
0 . 9
1
1 . 1
6 0 8 0 1 0 0 300 5 0 0
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
V c c = 3 0 0 V , I c = 2 0 A , V G E = + - 1 5 V , T j = 1 2 5 oC
Switching loss : Eon, Eoff, Err [ mJ / pulse ]
Gate resistance : Rg []
Er r
Eo ff
Eo n
0
10
20
30
40
50
60
0200 4 0 0 600 800
[ Inverter ]
Reverse bias safe operating area (max)
+VGE=15V, -VGE<=15V, Rg=>150 , Tj<=125oC
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
10
1 0 0
1000
10 20 3 0 40
[ Inverter ]
Switching t ime vs. Collector current (typ.)
Vc c = 3 0 0 V, V G E = + - 1 5V, Rg = 1 5 0 , Tj= 125oC
Switching time : ton, tr, toff, tf [ nsec ]
C o l l e c t o r c u r r e n t : I c [ A ]
ton
t f
t o f f
t r
10
1 0 0
1000
10 20 3 0 40
[ Inverter ]
Switching time vs. Collector current (typ.)
V c c = 3 0 0 V , V G E = + - 1 5 V , R g = 1 5 0 , Tj= 25oC
Switching time : ton, tr, toff, tf [ nsec ]
C o l l e c t o r c u r r e n t : I c [ A ]
ton
tf
t o f f
tr
10
1 0 0
1000
6 0 80 100 300 500
[ Inverter ]
Switching t ime vs. G ate resistance (typ.)
Vc c = 3 0 0 V, I c = 2 0 A , VG E = + - 1 5 V , T j = 2 5 oC
Switching time : ton, tr, toff, tf [ nsec ]
Gate resistance : Rg []
ton
tf
tr
toff
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
13/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
0
10
20
30
40
0 1 2 3 4
[ Inverter ]
Forward current vs. Forward on voltage (typ.) / chip
Forwardcurrent : IF [A]
Forward on vol tag e : VF [ V ]
Tj=125 oC
T j = 2 5 oC
10
1 0 0
01 0 2 0 30 40 50
[ Inverter ]
Reverse recovery characteristics (typ.)
V c c = 3 0 0 V , V G E = + - 1 5 V , R g = 1 5 0
R e v e r s e r e c o v e r y c u r r e n t : I r r [ A ]
R e v e r s e r e c o v e r y t i m e : t r r [ n s e c ]
Forward curr ent : IF [ A ]
t r r 1 2 5 ℃
Irr 125℃
I r r 2 5 ℃
trr 25℃
0
10
20
30
40
00.5 11.5 2
[ Converter ]
Forward curr ent vs. Forwar d on volt ag e (typ .) / chip
Forwardcurrent : IF [A]
Forward on voltage : VFM [ V ]
T j = 2 5 oCTj=125 oC
0.1
1
1 0
0.001 0.01 0 . 1 110
Tran sien t thermal resist ance (max.)
Thermalresistanse : Rth(j-c) [o
C/W]
Pulse width : Pw [ sec ]
F W D [ i n v e r t e r ]
I G B T [inverter]
F W D [ B r a k e ]
I G B T [Brake]
C O N V . D i o d e
0 . 1
1
10
1 0 0
-50 05 0 1 0 0 1 5 0 200
[ Thermistor ]
Tempera ture characteri stic (typ .)
Resistance : R [ ]
Temperat ur e [ oC ]
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
14/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
0
10
20
30
40
012345
[ Brake ]
Coll e ctor c ur r en t vs . Col l ec t or-E m itter volt ag e
T j = 2 5 oC (typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
9 V
11V
1 3 V1 5 VVGE=20V
0
10
20
30
40
0 1 2 3 4 5
[Brake]
Collector current vs. Collector-Emitter voltage
Tj= 125oC (typ.) / chip
C o l le c t o r c u r r e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
9 V
1 1 V
1 3 V
1 5 V
VGE=20V
0
10
20
30
40
012345
[ Brake ]
Coll e ctor c ur r en t vs . Col l ec t or-E m itter volt ag e
VG E =1 5V ( t y p . ) / c h ip
C o l le c t or c u rr e n t : I c [ A ]
Collector - Emitter voltage : VCE [ V ]
T j = 2 5 oCT j = 1 2 5 oC
0
2
4
6
8
10
810 12 1 4 16 1 8 2 0 22
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
T j = 2 5 oC (typ.) / chip
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter vol tage : VGE [ V ]
7.5A
1 5 A
Ic=30A
10
1 0 0
1000
1 0 4
0 5 10 1 5 20 2 5 3 0 35
[Brake]
Capacitance vs. Collector-Emitter voltage (typ.)
V G E = 0 V , f = 1 M H z , T j = 2 5 oC
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Cies
Cres
Coes
0
100
200
300
400
500
0
5
10
15
20
25
010 20 3 0 40 50 60 70
[ Inverter ]
Dynamic Gate charge (typ .)
Vcc=300V, Ic=8A, Tj= 25oC
Collector - Emitter voltage : VCE [ V ]
Gate-Emittervoltage : VGE [V]
Gat e c h a r g e : Q g [ nC ]
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
15/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
Warnings
-T h i s p r o d u c t s h a l l b e u s e d w i t h i n i t s a b s o l u t e m a x i m u m r a t i n g ( v o l t a g e , c u r r e n t , a n d t e m p e r a t u r e ) . T h i s p r o d u c t
may be broken in case of using beyond the ratings.
製品の絶対最大定格（ 電圧，電流，温度等） の範囲内で御使用下さい。絶対最大定格を超えて使用すると、 素子が破壊する
場合があります。
-C o n ne c t a d eq u a t e f u s e o r p r o t e c t o r o f c i r c u i t b et w e e n t h r e e - p h a s e l i n e a nd t h i s p r o d u c t t o pre ve n t t h e e q u i p m e n t
f r o m c a u s i n g s e c o n d a r y d e s t r u c t i o n , s u c h a s f i r e , i t s s p r e a d i n g , o r e x p l o s i o n .
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。
-U s e t h i s p rod u c t a f t e r re a l i z i n g e n o u g h wo r k i n g o n e n vi r o n m e n t a n d c o n s i d e r i n g o f p r o d uc t ' s r e l i a b i l i t y l i fe .
T h i s p r o d u c t m a y b e b r o k e n b e f o r e t a r g e t l i f e o f t h e s y s t e m i n c a s e o f u s i n g b e y o n d t h e p r o d u c t ' s r e l i a b i l i t y l i f e .
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を 超 え て 使 用 し た 場 合 、 装 置 の 目 標 寿 命 よ り 前 に 素 子 が 破 壊 す る 場 合 が あ り ま す 。
-When electric power is connected to equipments, rush current will be flown through rectifying diode to charge
D C c a p ac i t o r . G u a r a n t e e d va l u e o f t h e r u s h c u rr en t i s s p e c i f i e d a s I2t (non-repetitive), however frequent rush
current through the diode might make it's power cycle destruction occur because of the repetitive power.
I n a p p l i c a t i o n w h i c h h a s s u c h f r e q u e n t r u s h c u r r e n t , w e l l c o n s i d e r a t i o n t o p r o d u c t l i f e t i m e ( i . e . s u p p r e s s i n g
the rush current) is necessary.
電源投入時に整流用ダイオードには、コンデンサーを充電する為の突入電流が流れます。この突入電流に対する保証値は
I 2
t(非繰返し)として表記されていますが、この突入電流が頻繁に流れるとI
2
t破壊とは別に整流用ダイオードの繰返し負荷に
よ る パ ワ ー サ イ ク ル 耐 量 破 壊 を起 こ す 可 能 性 が あ り ま す 。 突 入 電 流 が 頻 繁 に 流 れ る よ う な ア プ リ ケ ー シ ョ ン で は 、 突 入 電 流 値
を 抑 え る な ど 、 製 品 寿 命 に 十 分 留 意 し て ご 使 用 下 さ い 。
-I f t h e p r o d u c t h a d b e e n u s e d i n t h e e n v i r o n m e n t w i t h a c i d , o r g a n i c m a t t e r , a n d c o r r o s i v e g a s ( h y d r o g e n s u l f i d e ,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・ 有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、 製品機能・ 外観等の保証はできません。
-Power cycle capability is classified to delta-Tj mode and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product.
I n a p p l i c a t i o n w h i c h h a s s u c h f r e q u e n t r i s e a n d d o w n o f T c , w e l l c o n s i d e r a t i o n o f p r o d u c t l i f e t i m e i s n e c e s s a r y .
パワーサイクル耐量にはΔTjによる場合の他に、ΔTcによる場合があり ま す。 これはケース温度(Tc)の上昇下降による
熱ストレスであり、本製品をご使用する際の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、
製品寿命に十分留意して ご使用下さい。
‐Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
本製品の実装にあたってはMoun ting Instructions (技術資料No. MT5F14628a) を 参 照 し て く だ さ い 。
-N e ve r a d d m e c h a n i c a l s t r e s s t o d efo r m t h e m a i n o r c o n t rol t e r m i n a l . Th e de fo r m e d t e rm i n a l m a y c a u s e p o or
contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。端子の変形により、接触不良などを引き起こす場合があります。
-U s e t h i s p rod u c t w i t h k e e p i ng t h e c o o l i n g f i n ' s f l a t n e s s b e t w e e n s c r e w h o l e s w i t h i n 5 0 u m a t 1 0 0 m m a n d t h e
r o u g h n e s s w i t h i n 1 0 u m . A l s o k e e p t h e t i g h t e n i n g t o r q u e w i t h i n t h e l i m i t s o f t h i s s p e c i f i c a t i o n . To o l a r g e c o n ve x
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin mak es gap between this produc t and the fin bigger, then, thermal c onductivity will
be worse and over heat destruction may occur.
冷却フィンはネジ取り付け位置間で平坦度を100mmで
5 0 u m 以下、表面の粗さは10um以下にして下さい。 過大な凸反り
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。ま た、過大な凹反りやゆがみ等があると、
本製品と冷却フインの間に空隙が生じて 放熱が悪くなり、熱破壊に繋がることがあります。
-I n c a s e o f m o u n t i n g t h i s p r o d u c t o n c o o l i n g f i n , u s e t h e r m a l c o m p o u n d t o s e c u r e t h e r m a l c o n d u c t i v i t y . I f t h e
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
C o n fi r m s p r e a d i n g s t a t e o f t h e t h e r m a l c o m p o un d w h e n i t s a pp l y i n g t o t h i s p ro du c t .
( S p r e a d i n g s t a t e o f t h e t h e rm a l c o m p o u n d c a n b e c o nf i r m e d b y r e m o vi n g t h i s p r o d u c t a ft e r m o u n t i n g . )
素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用く ださい。又、塗布量が不足したり、
塗布方法が不適だったりすると、 コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事がありま す。
コ ン パ ウ ン ド を 塗 布 す る 際 に は 、 製 品 全 面 に コ ン パ ウ ン ド が 広 が っ て い る 事 を 確 認 し て く だ さ い 。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)
-I t s h a l l b e c o n f i r m e d t h a t I G B T ' s o p e r a t i n g l o c u s o f t h e t u r n - o f f v o l t a g e a n d c u r r e n t a r e w i t h i n t h e R B S O A
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
す る 可 能 性 が あ り ま す 。
a
保守廃止予定機種
Not recommend for new design.
http://store.iiic.cc/
DWG.NO.
H 0 4 - 0 0 4 - 0 3 a
MS6M00819
16/16
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclos ed in any way wh atsoever fo r the use of any t h ird part y n o r u s ed
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
F u j i E l e c t r i c D e v i c e T e c h n o l o g y C o . , L t d . a
Cautions
-Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.
富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。
-The application examples described in this specification only explain typical ones that used the Fuji Electric Device
Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
-The product described in this specification is not designed nor made for being applied to the equipment or
systems used under li fe-threatening situations. W hen you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems, please apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
-I f e x c e s s i v e s t a t i c e l e c t r i c i t y i s a p p l i e d t o t h e c o n t r o l t e r m i n a l s , t h e d e v i c e s m a y b e b r o k e n . I m p l e m e n t s o m e
countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。
-N e ve r a d d t h e ex c e s s i ve m e c h a n i c a l s t r e s s t o t h e m a i n o r c o n t r ol t e rm i n a l s w h e n t he p r o d u c t i s a pp l i ed t o
equipments. The module structure may be broken.
素子を装置に実装する際に、主端子や制御端子に過大な 応力を与えないで下さい。端子構造が破壊する可能性がありま す。
-I n c a s e o f i n s u f f i c i e n t - V G E , e r r o n e o u s t u r n - o n o f I G B T m a y o c c u r . - V G E s h a l l b e s e t e n o u g h v a l u e t o p r e v e n t
this malfunction. (Recommended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさな い為に- VGEは十分な 値で
設定して下さい。 （推奨値:-VGE=-15V)
-I n c a s e o f h i g h e r t u r n - o n d v / d t o f I G B T , e r r o n e o u s t u r n - o n o f o p p o s i t e a r m I G B T m a y o c c u r . U s e t h i s p r o d u c t i n
the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
ターンオン d v / d t が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE, RG等）で ご使用下さい。
-T h i s p r o d u c t m a y b e b r o k e n b y a v a l a n c h e i n c a s e o f V C E b e y o n d m a x i m u m r a t i n g V C E S i s a p p l i e d b e t w e e n
C - E t e r m i n a l s . U s e t h i s p r od u c t w i t h i n i t s a b s ol u t e m a x i m u m vo l t a g e .
V C ES を超 え た 電 圧 が 印 加 さ れ た 場 合、 ア バ ラ ンシ ェを起 こし て 素 子 破 壊 する 場 合 があ り ま す 。 V C E は 必ず絶 対 定 格 の 範 囲内
でご使用下さい。
-Control th e surge vo ltage b y addin g ap r o t e c t i o n circuit(=snubber circuit)to t h e IGBT. Use afilmcapacitor
i n t h e snubber circuit,and th e n set i t nearth e IGBT in ordert o b i p a s s highfrequency surge currents.
I G BT に 保 護 回 路 ( = ス ナ バ 回 路 ) を付 け て サ ージ 電 圧 を吸 収 さ せ て く だ さ い 。 ス ナ バ 回 路 の コン デン サ に は フィ ル ム コ ン デ ン サ
を 用 い 、 I G B T の 近 く に 配 置 し て 高 周 波 サ ー ジ 電 圧 を 吸 収 す る 手 段 を 講 じ て く だ さ い 。
保守廃止予定機種
Not recommend for new design.
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