7MBR15SC120 IGBT Modules
PIM/Built-in converter with thyristor
and brake (S series)
1200V / 15A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Converter Thyristor Brake Inverter
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
1200
±20
25
15
50
30
15
110
1200
±20
25
15
50
30
110
1200
1600
1600
15
200
125
1600
15
155
120
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
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Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Thyristor Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=1200V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=15mA
VGE=15V, Ic=15A chip
terminal
VGE=0V, V CE=10V, f=1MHz
VCC=600V
IC=15A
VGE=±15V
RG=82Ω
IF=15A chip
terminal
IF=15A
VCES=1200V, VGE=0V
VCE=0V, VGE=±20V
IC=15A, VGE=15V chip
terminal
VCC=600V
IC=15A
VGE=±15V
RG=82Ω
VR=1200V
VDM=1600V
VRM=1600V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=15A chip
terminal
IF=15A chip
terminal
VR=1600V
T=25°C
T=100°C
T=25/50°C
75
200
8.5
2.6
1.2
0.6
1.0
0.3
3.2
350
75
200
2.6
1.2
0.6
1.0
0.3
75
1.0
1.0
100
2.5
1.05
1.5
75
1800
5.5 7.2
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
Ω
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
1.14
1.85
1.14
1.00 °C/W
1.30
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Module 7MBR15SC120
* This is the value which is defined mounting on the additional cooling fin with thermal compound
2.1
2.15
0.35
0.25
0.45
0.08
2.3
2.35
2.1
2.2
0.35
0.25
0.45
0.08
0.95
1.0
1.1
1.2
5000
465 495 520
3305 3375 3450
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IGBT Module 7MBR15SC120
Characteristics (Representative)
012345
0
5
10
15
20
25
30
35
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C(typ.)
Collector current : Ic [ A ]
Co llecto r - Emitter voltage : VC E [ V ]
012345
0
5
10
15
20
25
30
35
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C(typ.)
Co llecto r - Emitter voltage : VC E [ V ]
Collector current : Ic [ A ]
012345
0
5
10
15
20
25
30
35
Tj = 25°C Tj= 125°C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Co llecto r - Emitter voltage : VC E [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 7.5A
Ic= 1 5A
Ic= 3 0A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C(typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitte r vo lta ge : VG E [ V ]
0 5 10 15 20 25 30 35
50
100
500
1000
5000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE = 0 V , f= 1 MHz, Tj= 25 °C
Capaci tan ce : Ci es , Coes, Cr es [ pF ]
Co llecto r - Emitter voltage : VC E [ V ]
Coes
Cres
Cies
050100150
0
200
400
600
800
1000
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=15A, Tj= 25°C
Ga te charge : Q g [ n C ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
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IGBT Module 7MBR15SC120
0 5 10 15 20 25
50
100
500
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=82Ω, Tj= 25°C
Switching time : ton, tr, toff, tf [ nsec ]
Collect o r current : Ic [ A ]
0 5 10 15 20 25
50
100
500
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 82Ω, Tj= 125°C
Collect o r current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
30 100 1000
50
100
500
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=15A, VGE=±15V, Tj= 25°C
Ga te re sistance : Rg [ Ω ]
Switching time : ton, tr, toff, tf [ nsec ]
0 5 10 15 20 25 30
0
1
2
3
4
5
Err(25°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
Eoff(125°C)
Eon(125°C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=82Ω
Switchin g loss : Eon, Eoff, Err [ mJ/pulse ]
Collect o r current : Ic [ A ]
30 100 1000
0
2
4
6
8
10
12
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=15A, VGE=±15V, Tj= 125°C
Switchin g loss : Eon, Eoff, Err [ mJ/pulse ]
Ga te re sistance : Rg [ Ω ]
Eon
Err
Eoff
0 200 400 600 800 1000 1200 1400
0
50
100
150
200
SCSOA
(non-repetit ive pulse)
RBSOA
(Repet itive pu l s e)
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=82Ω, Tj<=125°C
Collector - Emitter voltage : VCE [ V ]
Collector cur rent : Ic [ A ]
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IGBT Module 7MBR15SC120
01234
0
5
10
15
20
25
30
35
0.0 0.4 0.8 1.2 1.6 2.0
2
10
100
Tj=25°CTj=125°C
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
Forward curren t : IF [ A ]
Forward on voltage : VF [ V ]
0 5 10 15 20 25
5
10
100
300
Irr(125°C)
Irr(25°C)
trr(25°C)
trr(125°C)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=82Ω
Forward current : I F [ A ]
Revers e recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.0 0.4 0.8 1.2 1.6 2.0
0
5
10
15
20
25
30
35
Tj= 25°C Tj= 125°C
[ Converter ]
Forward current vs. Forward on voltage (typ.)
Forward on voltage : VFM [ V ]
Forward curren t : IF [ A ]
0.001 0.01 0.1 1
0.05
0.1
1
10
Thyristor
Conv. Diode
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ °C/W ]
Pu lse width : P w [ se c ]
FWD[Inverter]
IGBT[Inverter&Brake]
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.1
1
10
100
200
[ Thermistor ]
Temperature characteristic (typ.)
Temperature [ °C ]
Resistance : R [ kΩ ]
[ Thyristor ]
On-state current vs. On-state voltage (typ.)
Tjw= 125° C Tjw= 25° C
Instantaneous on -state current [ A ]
Instantaneous on-state voltage [ V ]
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IGBT Module 7MBR15SC120
012345
0
5
10
15
20
25
30
35
8V
10V
12V
15V
VGE= 20 V
[ Brake ]
Collector current v s. Collector-Emitter voltage
Tj= 25°C(typ.)
Collector current : Ic [ A ]
Collec to r - E m itte r vo lta ge : VCE [ V ]
012345
0
5
10
15
20
25
30
35
8V
10V
12V
15VVGE= 20 V
[ Brake ]
Collector current v s. Collector-Emitter voltage
Tj= 125°C(typ.)
Collec to r - E m itte r vo lta ge : VCE [ V ]
Collector current : Ic [ A ]
012345
0
5
10
15
20
25
30
35
Tj= 2 5°C Tj= 125°C
[ Brake ]
Collector current v s. Collector-Emitter voltage
VGE=15V (typ.)
Collec to r - E m itte r vo lta ge : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 7 .5A
Ic= 15A
Ic= 30A
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C(typ.)
Collector - Em it ter voltage : VCE [ V ]
Gate - E m itter voltage : V G E [ V ]
0 5 10 15 20 25 30 35
50
100
500
1000
5000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE = 0V, f= 1 MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Collec to r - E m itte r vo lta ge : VCE [ V ]
Coes
Cres
Cies
050100150
0
200
400
600
800
1000
[ Bra k e ]
Dy namic Ga te ch arge (typ.)
Vcc=600V, Ic=15A, Tj= 25°C
Ga te charge : Q g [ n C ]
Collector - Em it ter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
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IGBT Module 7MBR15SC120
Outline Drawings, mm
Equivalent Circuit Schematic
Marking : White
Marking : White
23(N)
2(S) 3(T)1(R)
21
(P) 26
25
22(P1)
7(B)
24(N1)
13(Gx)
19(Eu)
20
(Gu) 18
(Gv)
17(Ev)
4(U)
12(Gy) 11(Gz)
5(V)
15(Ew)
16
(Gw)
6(W)
10(En)
98
[ Converter ] [ T hyri stor ] [ Brak e ] [ Inverter ] [ T hermistor ]
14(Gb)
23(N)
2(S) 3(T)1(R)
21
(P) 26
25
22(P1)
7(B)
24(N1)
13(Gx)
19(Eu)
20
(Gu) 18
(Gv)
17(Ev)
4(U)
12(Gy) 11(Gz)
5(V)
15(Ew)
16
(Gw)
6(W)
10(En)
98
[ Converter ] [ T hyri stor ] [ Brak e ] [ Inverter ] [ T hermistor ]
14(Gb)
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