RGP10A-RGP10M
RPG10A - RPG10M, Rev. A
RGP10A - RGP10M
1.0 Ampere Glass Passivated Fast Recovery Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
IOAverage Rectified Current
.375 " lead length @ TL = 55°C1.0 A
if(surge) Peak Forward Surge Current
8.3 m s single half-s i ne-wave
Superim posed on rat ed l oad (JE DE C method) 30 A
PDTotal Device Dissipation
Derate above 25°C2.5
17 W
mW/°C
RθJA Thermal Resis tance, Junction t o A mbient 50 °C/W
Tstg Storage Temperature Range -65 to +175 °C
TJOperating Junct i on Temperature -65 to +175 °C
1999 Fairchild Semiconductor Corporation
Features
•1.0 ampere operation at TA = 55°C
with no thermal runaway.
•High temperature metallurgically
bonded construction.
• Glass passivated cavity-free junction.
• Typical IR less than 1µA.
•Fast switching for high efficiency.
Parameter Device Units
10A 10B 10D 10G 10J 10K 10M
Peak Repe titive Re verse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Volta ge 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR)50 100 200 400 600 800 1000 V
Maximum Reverse Cu rrent
@ rated VRTA = 25°C
TA = 150°C5.0
200 µA
µA
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, I rr = 0.25 A 150 250 500 nS
Maximum Forward Volt age @ 1.0 A 1.3 V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz 15 pF
DO-41
COLOR BAND DENOTES CATHODE
1.0 min (25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
D i mensions in
inches (mm)
Discrete POWER & Signal
Technologies
RGP10A-RGP10M
RPG10A - RPG10M, Rev. A
Typical Characteristics
Non-Repetitive Surge Current
1 2 5 10 20 50 100
0
5
10
15
20
25
30
NU MBER OF C YC LES AT 60 Hz
PEAK FORWARD SURGE CURRENT (A)
F orward Characteristics
0.4 0.6 0.8 1 1.2 1.4 1.6
0.01
0.1
1
10
F ORWA R D VOLTAGE (V)
FOR WAR D CURRENT ( A)
Pu lse Wid th = 300µs
2% D uty Cycle
T = 25 C
º
A
Ju ncti o n Cap a cita nc e
1 2 5 10 20 50 100
1
2
5
10
20
50
100
REVERSE VOLTAG E (V)
CAPACITANCE (pF)
Pulse
Generator
(Note 2)
50
Ω
NONINDUCTIVE 50
Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50
Ω
NONINDUCTIVE
50V
(approx)
Reverse Recovery Time Characterstic and Test Circuit Diagram
1.0cm S ET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 n s/ cm
Reverse C haracteri stics
0 20406080100120140
0.01
0.1
1
10
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
REVERSE CURRENT ( A)
µ
T = 25 C
º
A
T = 75 C
º
A
T = 125 C
º
A
For ward Curre nt De ratin g Curve
25 50 75 100 125 150 175
0
0.25
0.5
0.75
1
LEAD TEMPERATURE ( C)
FO RWARD CURRENT (A)
º
SINGLE PHASE
HA L F WAV E
60 HZ
RESISTIVE OR
INDUCTIVE LOAD
.375 " (9.0 mm) LEAD
LENGTHS
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
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FAST®
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GTO™
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