Document Number: 88513 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 26-Aug-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Glass Passivated Junction Rectifier
1N5059GP thru 1N5062GP
Vishay General Semiconductor
FEATURES
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1) JEDEC registered values
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 200 V to 800 V
IFSM 50 A
IR5.0 μA
VF1.2 V
TJ max. 175 °C
DO-204AC (DO-15)
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT
Maximum repetitive peak reverse voltage VRRM (1) 200 400 600 800 V
Maximum RMS voltage VRMS 140 280 420 560 V
Maximum DC blocking voltage VDC (1) 200 400 600 800 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 75 °C IF(AV) (1) 1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM (1) 50 A
Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length at
TA = 25 °C
IR(AV) (1) 5.0
μA
TA = 75 °C 150
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88513
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 26-Aug-09
1N5059GP thru 1N5062GP
Vishay General Semiconductor
Note
(1) JEDEC registered values
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT
Max. instantaneous forward voltage 1.0 A TA = 75 °C VF (1) 1.2 V
Maximum DC reverse current at rated
DC blocking voltage
TA = 25 °C
IR (1) 5.0
μA
TA = 175 °C 300
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 2.0 μs
Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT
Typical thermal resistance
RθJA (1) 45
°C/W
RθJL (1) 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5061GP-E3/54 0.425 54 4000 13" diameter paper tape and reel
1N5061GP-E3/73 0.425 73 2000 Ammo pack packaging
1N5061GPHE3/54 (1) 0.425 54 4000 13" diameter paper tape and reel
1N5061GPHE3/73 (1) 0.425 73 2000 Ammo pack packaging
0
25 50 75 100 125 150 175 200
0.2
0.4
0.6
0.8
1.0
Average Forward Rectied Current (A)
Ambient Temperature (°C)
60 Hz
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
1 10 100
10
20
30
40
50
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
A
= 100 °C
8.3 ms Single Half Sine-Wave
(JEDEC Method)
Document Number: 88513 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 26-Aug-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
1N5059GP thru 1N5062GP
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0
0.01
0.1
1
10
60 80 10020 40
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
100
1
10
100
Reverse Voltage (V)
110
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
0.01 0.1 101 100
0.1
10
100
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
0.140 (3.6)
0.104 (2.6)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
MIN.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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