2SK2408 Silicon N Channel MOS FET REJ03G1011-0300 (Previous: ADE-208-1358) Rev.3.00 Apr 27, 2006 Application High speed power switching Features * * * * * Low on-resistance Built-in fast recovery diode (trr = 120 ns typ) High speed switching Low drive current Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.3.00 Apr 27, 2006 page 1 of 6 2 3 S 2SK2408 Absolute Maximum Ratings (Ta = 25C) Item Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Ratings 500 30 7 28 7 60 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min 500 30 Typ -- -- Max -- -- Unit V V Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage IGSS IDSS VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage RDS(on) -- -- 2.0 -- -- -- -- 0.7 10 250 3.0 0.9 A A V VGS = 25 V, VDS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V*3 3.5 -- -- -- -- -- -- -- -- -- 6.0 1100 310 50 15 55 100 48 0.9 120 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns ID = 4 A, VDS = 10 V*3 Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.3.00 Apr 27, 2006 page 2 of 6 |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 7.5 IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / s 2SK2408 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 60 D C 5 O 1 pe ra n c 25 C ) = ot 0.5 (T sh Operation in this area is limited by RDS(on) s (1 2 s s 0 s tio 1 m 10 m 20 10 10 40 10 = Drain Current ID (A) 20 PW Channel Dissipation Pch (W) 80 ) 0.2 0.1 Ta = 25C 0.05 0 50 100 150 1 200 3 100 300 1000 Typical Transfer Characteristics Typical Output Characteristics 20 20 7V VDS = 20 V Pulse Test 6V 16 Pulse Test Drain Current ID (A) Drain Current ID (A) 30 Drain to Source Voltage VDS (V) Case Temperature TC (C) 10 V 10 12 5V 8 4 Ta = 25C -25C 16 75C 12 8 4 VGS = 4 V 10 20 30 40 50 4 2 6 10 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 10 A 6 4 5A 2 0 0 ID = 2 A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.3.00 Apr 27, 2006 page 3 of 6 Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) 0 5 Pulse Test 2 VGS = 10 V 1 15 V 0.5 0.2 0.1 0.05 0.5 1 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) () 2SK2408 2.0 VGS = 10 V Pulse Test 1.6 1.2 ID = 10 A 0.8 2, 5 A 0.4 0 -40 40 0 80 120 160 2 1 0.5 0.1 0.2 1 0.5 2 5 10 5,000 VGS = 0 f = 1 MHz Capacitance C (pF) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 100 Ciss 1,000 Coss 100 Crss 10 0.5 2 1 5 10 5 0 20 20 10 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 VDS VDD = 100 V 250 V 400 V 300 16 VGS 12 8 200 VDD = 400 V 250 V 100 V 100 ID = 7 A 4 0 8 16 24 32 Gate Charge Qg (nc) Rev.3.00 Apr 27, 2006 page 4 of 6 40 500 Gate to Source Voltage VGS (V) 500 VGS = 10 V VDD = 30 V PW = 2 s, duty < 1% * * Switching Time t (ns) Reverse Recovery Time trr (ns) Drain to Source Voltage VDS (V) 5 Typical Capacitance vs. Drain to Source Voltage 200 0 TC = -25C 25C 75C 10 Body to Drain Diode Reverse Recovery Time 500 400 20 Drain Current ID (A) 1,000 50 0.2 VDS = 20 V Pulse Test Case Temperature TC (C) 5,000 2,000 50 200 td(off) 100 50 tf 20 tr td(on) 10 5 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 2SK2408 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 12 15 V 8 10 V 4 VGS = 0, -10 V 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance S (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 2.08C/W, Tc = 25C 0.1 0.05 0.03 PDM 0.02 1 lse 0.0 t pu o h 1s 0.01 10 100 D= PW T PW T 1m 100 m 10 m 1 10 Pulse Width PW (s) Waveforms Switching Time Test Circuit Vin Monitor 90% Vout Monitor Vin D.U.T. RL Vout Vin 10 V 50 V.DD =. 30 V 10% 90% td(on) Rev.3.00 Apr 27, 2006 page 5 of 6 10% tr 10% 90% td(off) tf 2SK2408 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 0.2 11.5 Max 10.16 0.2 9.5 3.6 1.26 0.15 15.0 0.3 18.5 0.5 1.27 6.4 +0.2 -0.1 8.0 4.44 0.2 +0.1 -0.08 7.8 0.5 0.76 0.1 14.0 0.5 2.7 Max 1.5 Max 0.5 0.1 2.54 0.5 2.54 0.5 Ordering Information Part Name 2SK2408-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Apr 27, 2006 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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