General Purpose Transistor
NPN Silicon
Maximum Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
Unit
Vdc
Vdc
Vdc
mAdc
200
Rating
MMBT3904=1AM
Device Marking
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MMBT3904
1
2
3
BASE
COLLECTOR
EMITTER
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pukse Width 300 uS, Duty Cycle 2.0%.
Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0)
Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc)
Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Off C har acter istics
40
60
6.0
-
-
-
-
-
<
=
<
=
Characteristics Symbol Min Max Unit
Electrical Characteristics (TA=25 C Unless Otherwise noted)
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Total Device Dissipation FR-5 Board (1)
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 C
Derate above 25 C
Junction and Storage, Temperature
Characteristics
TJ,Tstg
R JA
PD
PD
Symbol Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Thermal Characteristics
q
R JA
q
SOT-23
1
2
3
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Unit
Min Max
MMBT3904
Small-signal Characteristics
Current-Gain-Bandwidth Product (4)
(IC= 10 mAdc, VCE= 20 Vdc, f=100MHz)
Output Capacitance
(VCB= 5.0 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB= 0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz)
Voltage Feeback Radio
(VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz)
Small-Signal Current Gain
(VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz)
Output Admittance
(VCE= 10Vdc, IC=1.0 mAdc, f=-1.0kHz)
Noise Figure
(VCE= 5.0Vdc, IC= 100 µAdc, , RS=1.0k ohms, f=1.0kHz)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300
-
-
-
-
0.5
1.0
100
1.0
4.0
5.0
MHz
pF
pF
kohms
x 10-4
-
umhos
dB
40
400
8.0
10
8.0
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc= 3.0 Vdc, VBE= -0.5 Vdc
Ic= 10 mAdc, IB1= 1.0 mAdc)
(Vcc= 3.0 Vdc,
Ic= 10 mAdc, IB1=IB2= 1.0 mAdc)
3.Pulse Test:Pluse Width 300 uS, Duty Cycle 2.0%.
<
=
<
=
td
tr
ts
tf
-
-
-
-
35
35
200
50
ns
ns
WEITRON
DC Current Gain
(IC= 0.1 mAdc, VCE=1.0Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0Vdc)
(IC= 50 mAdc, VCE= 1.0Vdc)
(IC= 100 mAdc, VCE= 1.0Vdc)
Collector-Emitter Saturation Voltage (3)
(IC= 10 mAdc, IB= 1.0mAdc)
(IC= 50 mAdc, IB= 5.0mAdc)
Base-Emitter Saturation Voltage (3)
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)
HFE
VCE(sat)
VBE(sat)
-
Vdc
Vdc
40
70
100
60
30
-
-
-
-
300
-
-
0.2
0.3
0.85
0.95
On Characteristics
0.65
-
(3)
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MMBT3904
FIG.3 Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
CAPACITANCE(pF)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
10
7.0
5.0
3.0
2.0
1.0
Cibo
Cobo
FIG.4 Charge Data
IC COLLECTOR CURRENT (mA)
Q CHARGE (pC)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
5000
3000
2000
1000
700
500
300
200
100
70
50
VCC=40V
IC / IB=10
QT
QA
TYPICAL TRANSIENT CHARACTERISTICS
TJ=25 C TJ=125 C
<1ns
-0.5V
+10.9V
300 ns
DUTY CYCLE=2%
10k
CS<4 pF
+3V
275
-9.1V <1ns
0
10<t1<500µs t1+10.9V
DUTY CYCLE=2%
10k
1N916
275
CS<4 pF
+3V
*Total shunt capacitance of test jig and connectors
FIG.1 Delay and Rise Time
Equivalent Test Circuit FIG.2 Storage and Fall Time
Equivalent Test Circuit
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MMBT3904
tr@VCC=3.0V
td@VOB=0V
FIG.5 Turn-On Time
IC COLLECTOR CURRENT
TIME (ns)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
5
IC / IB=10
40V
15V
2.0V
IC COLLECTOR CURRENT (mA)
tf RISE TIME (ns)
FIG.6 Rise Time
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
30
20
10
7
5
50
VCC =40V
IC / IB=10
FIG.8 Fall Time
IC COLLECTOR CURRENT (mA)
tf FALL TIME (ns)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
5
VCC=40V
IB1=IB2
IC / IB=20
IC / IB=10
FIG.7 Storage Time
IC COLLECTOR CURRENT (mA)
I, STORAGE TIME (ns)
s
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
5
IC / IB=20
IC / IB=20
IC / IB=10
IC / IB=10
t , =ts-1/8tf
IB1=IB2
s
WEITRON
FIG.10
RS SOURSE RESISTANCE (kOHMS)
NF NOISE FIGURE (dB)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
14
12
10
8
6
4
2
0
f =1.0kHz
IC=1.0mA
IC=0.5mA
IC=50 µA
IC=100 uA
FIG.9
f FREQUENCY (kHz)
NF NOISE FIGURE (dB)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
12
10
8
6
4
2
0
SOURCE RESISTANCE=200 W
IC=1.0 mA
SOURCE RESISTANCE=200 W
IC=0.5 mA
SOURCE RESISTANCE=500½
IC=100µA
SOURCE RESISTANCE=1.0k
IC=50uA
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE=5.0 Vdc. TA=25 C, Bandwidth=1.0Hz)
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MMBT3904
WEITRON
FIG.11 Current Gain
IC COLLECTOR CURRENT (mA)
hfe CURRENT GAIN
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
300
200
100
70
50
30
FIG.13 Input Impedance
IC COLLECTOR CURRENT (mA)
hfe INPUT IMPEDANCE (k OHMS)
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
20
10
5.0
2.0
1.0
0.5
0.2
FIG.14 Voltage Feedback Radio
IC COLLECTOR CURRENT (mA)
hfe VOLTAGE FEEDBACK RADIO (X 10-4)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
FIG.12 Output Admittance
IC COLLECTOR CURRENT (mA)
hoe OUTPUT ADMITTANCE (µ mhos)
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
100
50
20
10
5
2
1
FIG.15 DC Current Gain
IC COLLECTOR CURRENT (mA)
hfe DC CURRENT GAIN (NORMALIZED)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
2.0
1.0
0.7
0.5
0.3
0.2
0.1
TJ=+125 C VCE=1.0V
+25 C
-55 C
TYPICAL STATIC CHARACTERISTICS
h PARAMETERS (VCE=10 Vdc,m f=1.0 kHz, TA=25 C)
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(NPN)
MMBT3904
FIG.16 Collector Saturation Ragion
IB BASE CURRENT (mA)
VCE COLLECTOR EMITTER VOLTAGE (VOLTS)
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0
0.8
0.6
0.4
0.2
0
FIG.17 "ON" Voltage
IC COLLECTOR CURRENT (mA)
V VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50 100 200
1.2
1.0
0.8
0.6
0.4
0.2
0
TJ=25 C
VBE(sat)@IC/IB=10
VBE(sat)@VCE=1.0V
VCE(sat)@IC/IB=10
FIG.18 Temperature Coefficients
IC COLLECTOR CURRENT (mA)
COEFFICIENT (mV/ C)
020 40 60 80 100 120 140 160 180 200
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
qVC FOR VCE(sat)
qVB FOR VBE(sat)
+25 C to +125 C
+25 C to +125 C
-55 C to +25 C
-55 C to +25 C
Ic=1.0mA 10mA 30mA 100mA
TJ=25 C
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MMBT3904
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
A
B
D
EG
M
L
H
J
TOP V IE W
K
C
SOT-23 Package Outline Dimensions Unit:mm
WEITRON
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