MMBT3904 General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Symbol Max Unit 225 mW 1.8 mW/ C C/W PD RqJA 556 300 PD Thermal Resistance, Junction to Ambient Junction and Storage, Temperature RqJA TJ,Tstg mW 2.4 417 mW/ C C/W -55 to +150 C Device Marking MMBT3904=1AM Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off C har acter istics Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC=10 Adc, IE=0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (IE=10 Adc, IC=0) V(BR)EBO 6.0 - Vdc Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc) IBL - 50 nAdc Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc) ICEX - 50 nAdc 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pukse Width < =300 uS, Duty Cycle < =2.0%. WEITRON http://www.weitron.com.tw MMBT3904 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max 40 - Unit On Characteristics (3) DC Current Gain (IC= 0.1 mAdc, VCE=1.0Vdc) (IC= 1.0 mAdc, VCE= 1.0 Vdc) (IC= 10 mAdc, VCE= 1.0Vdc) (IC= 50 mAdc, VCE= 1.0Vdc) HFE (IC= 100 mAdc, VCE= 1.0Vdc) 70 - 100 300 60 - 30 - - Collector-Emitter Saturation Voltage (3) (IC= 10 mAdc, IB= 1.0mAdc) (IC= 50 mAdc, IB= 5.0mAdc) VCE(sat) - 0.2 0.3 Base-Emitter Saturation Voltage (3) (IC= 10 mAdc, IB= 1.0 mAdc) (IC= 50 mAdc, IB= 5.0 mAdc) VBE(sat) 0.65 - 0.85 0.95 Vdc fT 300 - MHz Output Capacitance (VCB= 5.0 Vdc, IE=0, f=1.0MHz) Cobo - 4.0 pF Input Capacitance (VEB= 0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz) Cibo - 8.0 pF hie 1.0 10 kohms Voltage Feeback Radio (VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz) hre 0.5 8.0 x 10-4 Small-Signal Current Gain (VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz) hfe 100 400 - Output Admittance (VCE= 10Vdc, IC=1.0 mAdc, f=-1.0kHz) hoe 1.0 40 umhos Noise Figure (VCE= 5.0Vdc, IC= 100 Adc, , RS=1.0k ohms, f=1.0kHz) NF - 5.0 dB (Vcc= 3.0 Vdc, VBE= -0.5 Vdc Ic= 10 mAdc, IB1= 1.0 mAdc) td - 35 tr - 35 (Vcc= 3.0 Vdc, Ic= 10 mAdc, IB1=IB2= 1.0 mAdc) ts - 200 tf - 50 Vdc Small-signal Characteristics Current-Gain-Bandwidth Product (4) (IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) Switching Characteristics Delay Time Rise Time Storage Time Fall Time < 3.Pulse Test:Pluse Width < =300 uS, Duty Cycle =2.0%. WEITRON http://www.weitron.com.tw ns ns MMBT3904 DUTY CYCLE=2% +3V 300 ns +10.9V 275 10