NOTES : 1.Measured at 1.0MHz and applied reverse volt age of 4.0V DC.
2.Thermal Resistance Junction to Lead.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
C
J
@T
J
=100 C
SB120 thru SB160
FEATURES
M etal -S e miconductor ju n c t ion with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
w h ee ling,a nd po lar ity protection ap plica tion s
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
30
21
30
SB120
20
14
20
60
42
60
50
35
50
40
28
40
Maximum Average Forward Rectified Current
.375"(9.5mm ) Lead Lengths
@T
L
=
100 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Rev erse Cu rrent
at Rated DC Blocking Voltage
@T
J
=25 C
Typical Junction
Capacitance (Note 1)
1.0
40
0.50
0.5
10
110
T
J
Operating Temperature Range
-55 to +125 C
T
STG
Storage Tem perature Range
-55 to +150 C
Typical Thermal Resistance (Note 2)
R
0JL
15
C/W
pF
mA
V
A
A
V
UNIT
V
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B 25.4 5.20
-
4.10
0.71
2.00 2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
0.70
80
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOLTAGE
- 20
to
60
Volts
FORWARD CURRENT
- 1.0
Ampere
SB130
SB140
SB150
SB160
SEMICONDUCTOR
LITE-ON
REV. 3, Apr-2005, KDHC02
-55 to +150