BSS63 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switch applications requiring high voltages. Sourced from process 74. E SOT-23 Mark: T3 B Ordering Information Part Number Marking Package Packing Method BSS63 T3 SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -100 V VCBO Collector-Base Voltage -110 V VEBO Emitter-Base Voltage IC TJ , TSTG Collector Current - Continuous Junction and Storage Temperature Range -6 V -200 mA -55 to +150 C Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 1997 Fairchild Semiconductor Corporation BSS63 Rev. 1.1.0 www.fairchildsemi.com 1 BSS63 -- PNP General-Purpose Amplifier March 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Max. Unit Total Device Dissipation 350 mW Derate Above TA = 25C 2.8 mW/C Thermal Resistance, Junction to Ambient 357 C/W Note: 3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit -100 V V(BR)CBO Collector-Emitter Breakdown Voltage IC = -100 A, IB = 0 Collector-Base Breakdown Voltage IC = -10 A, IE = 0 -110 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -1.0 A, IC = 0 -6.0 V(BR)CEO V VCB = -90 V, IE = 0 -100 nA ICBO Collector Cut-Off Current VCB = -90 V, IE = 0, TA = 150C -50 A IEBO Emitter Cut-Off Current VEB = -6.0 V, IC = 0 -200 nA hFE DC Current Gain IC = -10 mA, VCE = -1.0 V 30 IC = -25 mA, VCE = -1.0 V 30 VCE(sat) Collector-Emitter Saturation Voltage IC = -25 mA, IB = -2.5 mA -0.25 V VBE(sat) Base-Emitter Saturation Voltage IC = -25 mA, IB = -2.5 mA -0.9 V Current Gain - Bandwidth Product IC = 25 mA, VCE = -5.0 V, f = 35 MHz fT (c) 1997 Fairchild Semiconductor Corporation BSS63 Rev. 1.1.0 50 MHz www.fairchildsemi.com 2 BSS63 -- PNP General-Purpose Amplifier Thermal Characteristics(3) VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN 200 V CE = 5V 150 125 C 100 25 C 50 - 40 C 0 0.0001 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 V BE(O N)- BASE-E MITTER ON VOLTAGE (V) V BESAT - BASE -EMITTER VOLTAG E (V) 1 - 40 C 25 C 0.6 125 C 0.4 = 10 0.2 0.1 IC 1 10 - COLLECTOR CURRENT ( mA) 0.3 0.2 25 C 125 C 0.1 - 40 C 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 100 1 - 40 C 0.8 25 C 0.6 125 C 0.4 V C E = 5V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 4. Base-Emitter On Voltage vs. Collector Current BV CER - BREAKDOWN VOLTAGE (V) Figure 3. Base-Emitter Saturation Voltage vs. Collector Current I CBO - COLLECTOR CURRENT (nA) = 10 Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 1. Typical Pulsed Current Gain vs. Collector Current 0.8 0.4 100 220 V CB = 10 0V 10 210 200 1 190 0.1 25 180 50 75 100 125 T A - AM BIENT TE MPE RATURE (C) 170 0.1 150 10 100 1000 RESISTANCE (k ) Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Figure 5. Collector Cut-Off Current vs. Ambient Temperature (c) 1997 Fairchild Semiconductor Corporation BSS63 Rev. 1.1.0 1 www.fairchildsemi.com 3 BSS63 -- PNP General-Purpose Amplifier Typical Performance Characteristics 80 350 P D - POWER DISSIPATION (mW) f = 1.0 MHz CAPACITANCE (pF) 300 60 250 SOT-23 200 40 C eb 150 100 20 C cb 0 0.1 1 10 0 100 V R - REVERSE BIAS VOLTAGE(V) 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 8. Power Dissipation vs. Ambient Temperature Figure 7. Input and Output Capacitance vs. Reverse Voltage (c) 1997 Fairchild Semiconductor Corporation BSS63 Rev. 1.1.0 50 www.fairchildsemi.com 4 BSS63 -- PNP General-Purpose Amplifier Typical Performance Characteristics (Continued) BSS63 -- PNP General-Purpose Amplifier Physical Dimensions SOT-23 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 9. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor's online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. 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