UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2012 Unisonic Technologies Co., Ltd QW-R206-010,G
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
The UTC MMBT5551 is a high voltage fast-switching NPN
power transistor. It is characterized with high breakdown voltage,
high current gain and high switching speed.
FEATURES
* High Collector-Emitter Voltage: VCEO=160V
* High current gain
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Normal Lead Free Plating Halogen-Free 1 2 3
MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R SOT-23 E B C Tape Reel
MARKING
MMBT5551
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R206-010,G
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector -Base Voltage VCBO 180 V
Collector -Emitter Voltage VCEO 160 V
Emitter -Base Voltage VEBO 6 V
DC Collector Current IC 600 mA
Power Dissipation PD 350 mW
Junction Temperature TJ +150 °C
Storage Temperature TSTG -40 ~ +150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional devic e operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage VCBO I
C=100μA, IE=0 180 V
Collector-Emitter Breakdown Voltage VCEO I
C=1mA, IB=0 160 V
Emitter-Base Breakdown Voltage VEBO I
E=10μA, IC=0 6 V
Collector Cut-off Current ICBO V
CB=120V, IE=0 50 nA
Emitter Cut-off Current IEBO V
BE=4V, IC =0 50 nA
DC Current Gain(note) hFE VCE=5V, IC =1mA
VCE=5V, IC =10mA
VCE=5V, IC =50mA
80
80
80 160 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
0.2 V
Base-Emitter Saturation Voltage VBE(SAT) IC=10mA, IB=1mA
IC=50mA, IB=5mA
1
1 V
Current Gain Bandwidth Product fT V
CE=10V, IC =10mA, f=100MHz 100 300 MHz
Output Capacitance Cob V
CB=10V, IE=0, f=1MHz 6.0 pF
Noise Figure NF IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
8 dB
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK A B C
RANGE 80-170 150-240 200-400
MMBT5551
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
www.unisonic.com.tw QW-R206-010,G
■ TYPICAL CHARACTERICS
Fig.2 DC Current Gain
Collector Current, Ic (mA)
DC current Gain, hFE
102
101
100
103
103
102
101
100
10
-1
VCE=5V
Fig.3 Base-Emitter on Voltage
100
101
102
Collector Current, Ic (mA)
Base-Emitter Voltage (V)
0 0.2 0.4 0.6 0.8 1.0
VCE=5V
Collector Current, Ic (mA)
103
102
101
100
10
-1
Saturation Voltage (V)
Fig.4 Saturation Voltage
Fig.5 Current Gain-Bandwidth
Product
Fig.1 Collector Output Capacitance
VCE(SAT)
VBE(SAT)
Ic=10*IB
Collector Current, Ic (mA)
100101102
103
Current Gain-Bandwidth Product, fT(MHz)
100
101
102
VCE=10V
Collector-Base Voltage (V)
Capacitance, Cob (pF)
103
100101102
0
2
4
6
8
10
f=1MHz
IE=0
103101
100
10
-1
10
-2
1
0.001
Forward Voltage-VCE(V)
COLLECTOR CURRENT, Ic (A)
100
1
0.01
1000
10
SAFE OPERATING AREA
10
0.1
10mS
1.0S
MMBT5551
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R206-010,G
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not f orm part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
