SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 TRANSISTOR (NPN) 1.BASE 2.EMITTER 3.COLLECTOR 3 7 FEATURES _ 1 Power dissipation ja 2 Poem: 0.2 W (Tamb=25C ) Collector current Icom: O.2A Collector-base voltage ViBR)CBO: GOV Operating and storage junction temperature range Tu, Tstg: -55'C to+ 150C UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25C unless otherwise specified) Parameter : Collector-base breakdown voltage VipR)cBo Ic=100u A, te=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, ip=0 40 Vv Emitter-base breakdown voltage V(BR)EBO Ic=1001n A, ip=0 6 Vv Collector cut-off current icBo Vcs=60V ,le=0 0.1 uA Collector cut-off current IcEO Vce=40V,is=0 0.1 LA Emitter cut-off current leBo VeBs=5V,Ic=0mA 0.1 HA hFe(1) VcE=1V,lc=10mA 100 300 DC current gain HEE(2) Vce=1V, Ic=50mA 60 Colliector-emitter saturation valtage VcEsat ic=100mA la=5mA 0.4 Vv Base-emitter saturation voltage VBEsat Ic=50mA,|8=5mA 0.95 Transition frequency fr Vce=20V,Ic=10mA,f=100MHz 250 MHz DEVICE MARKING : MMBT3904LT1=1AM 184 Typical Characteristics MMBT3904LT1 N o = i) So 9 oon cs) hre,OC CURRENT GAIN (NORMALIZED) to 0.1 0.1 02 0.3 0.5 0.7 1.0 20 3.0 5.0 7.0 10 20 30 50 70 100 200 Ic , COLLECTOR CURRENT (mA) DC Current Gain Vee(sat)@Ic/Ils = 10 VBE@VCcE=1.0V V.VOLTAGE (VOLTS) Vce(sat)@Ic/le = 10 1.0 20 50 10 20 50 100 200 Ic COLLECTOR CURRENT(mA) "On'Voltages 185