©2000 Fairchild Semiconductor International
www.fairchildsemi.com
Rev. .5.0
Features
Precision fixed operating frequency
KA1L0380B/KA1L0380RB (50KHz)
KA1M0380RB (67KHz)
KA1H0380RB (100KHz)
Pulse by pulse over current limiting
Over load protection
Over voltage protection (Min. 23V)
Internal thermal shutdown function
Unde r volt a g e lock out
Internal high voltage sense FET
•Auto restart (
KA1L0380RB/KA1M0380RB/KA1H0380RB)
Description
The SPS product family is specially designed for an off-line
SMPS with mini mal externa l components. The SP S consis t of
high voltage power SenseFET and current mode PWM control-
ler IC. PWM controller features integrated fixed oscillator ,
under voltage lock out, leading edge blanking, optimized gate
turn-on/turn-of f driver , therma l shut down protection, over volt-
age protection, temperature compensated precision curr ent
sources for loop compensation and fault protection circuit.
Compared to discrete MOSFET and controller or RCC switch-
ing converter solution, a SPS can reduce total component count,
design size, weight and at the same time increase & efficiency,
productivity, and system reliability. It has a basic platform well
suited for cost effe ctive design i n either a f lyback converter or a
forward converter.
TO-220F-4L
1. GND 2. DRAIN 3. VCC 4. FB
1
Internal Block Diagram
#3 V
CC
32V
5
µ
A9V
2.5R
1R
1mA
0.1V
+
OVER VOLTAGE S/D
+
7.5V
25V
Thermal S/D
S
RQ
Power on reset
+
L.E.B
S
RQ
OSC
5V
Vref Internal
bias
Good
logic
SFET #2 DRAIN
#1 GND
#4 FB
KA1L0380B/KA1L0380RB/KA1M0380RB/
KA1H0380RB
Fairchild Power Switch(SPS)
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
2
Absolute Maximum Ratings
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=51mH, VDD=50V, RG=25, starting Tj=25°C
4. L=13µH, starting Tj=25°C
Parameter Symbol Value Unit
Drain-source (GND) voltage (1) VDSS 800 V
Drain-Gate voltage (RGS=1M)V
DGR 800 V
Gate-source (GND) voltage VGS ±30 V
Drain current pulsed (2) IDM 12 ADC
Single pulsed avalanche energy (3) EAS 95 mJ
Avalanche current(4) IAS 6A
Continuous drain current (TC=25°C) ID3.0 ADC
Continuous drain current (TC=100°C) ID2.1 ADC
Supply voltage VCC 30 V
Analog input voltage range VFB 0.3 to VSD V
Total power dissipation PD35 W
Derating 0.28 W/°C
Operating temperature TOPR 25 to +85 °C
Storage temperature TSTG 55 to +150 °C
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
Pulse tes t: Pulse wid th 300µS, duty cycle 2%
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 800 - - V
Zero gate voltage drain current IDSS
VDS=Max., Rating,
VGS=0V --50µA
VDS=0.8Max., Rating,
VGS=0V, TC=125°C- - 200 µA
Static drain-source on resistance (Note) RDS(ON) VGS=10V, ID=1.5A - 4.0 5.0
Forward transconductance (Note) gfs VDS=15V, ID=1.5A 1.5 2.5 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 779 - pFOutput capacitance Coss - 75.6 -
Reverse transfer capacitance Crss - 24.9 -
Turn on delay time td(on) VDD=0.5BVDSS, ID=3.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-40-
nS
Rise time tr - 95 -
Turn off delay time td(off) - 150 -
Fall time tf - 60 -
Total gate charge
(gate-source+gate-drain) Qg VGS=10V, ID=3.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
--34
nC
Gate-source charge Qgs - 7.2 -
Gate-drain (Miller) charge Qgd - 12.1 -
S1
R
----=
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
4
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Notes:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
Parameter Symbol Condition Min. Typ. Max. Unit
REFERENCE SECTION
Output voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V
Temperature Stability (1)(2) Vref/T25°CTa+85°C-0.30.6mV/°C
OSCILLATOR SECTION
Initial accuracy FOSC
KA1L0380B 45 50 55
kHz
KA1L0380RB 45 50 55
KA1M0380RB 61 67 73
KA1H0380RB 90 100 110
Frequency change with temperature (2) F/T25°CTa+85°C-±5±10 %
PWM SECTION
Maximum duty cycle Dmax
KA1L0380B 74 77 80
%
KA1L0380RB 74 77 80
KA1M0380RB 74 77 80
KA1H0380RB 64 67 70
FEEDBACK SECTION
Feedback source current IFB Ta=25°C, 0VVfb3V 0.7 0.9 1.1 mA
Shutdown delay current Idelay Ta=25°C, 5VVfbVSD 4.0 5.0 6.0 µA
OVER CURRENT PROTECTION SECTION
Over current protection IL(max) Max. inductor current 1.89 2.15 2.41 A
UVLO SECTION
Start threshold voltage Vth(H) - 14 15 16 V
Minimum operating voltage Vth(L) After turn on 9 10 11 V
TOTAL STANDBY CURRENT SECTION
Start current IST VCC=14V 0.1 0.3 0.45 mA
Operating supply current
(control part only) IOPR Ta=25°C 6 12 18 mA
VCC zener voltage VZICC=20mA 30 32.5 35 V
SHUTDOWN SECTION
Shutdown Feedback voltage VSD -6.97.58.1V
Thermal shutdown temperature (Tj) (1) TSD - 140 160 - °C
Over voltage protection voltage VOVP -232528V
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
5
Typical Perfo rma n ce Cha ra cte ristic s
(These characteristic graphs are normalized at Ta=25°C)
F ig. 1 O p era t ing F r equenc y
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Fosc
F ig. 2 Feedback Source Cur r ent
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Ifb
F ig.3 Operating Curr ent
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Induct o r C ur rent
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
F ig. 5 S t ar t up Curr ent
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig. 6 Start T hreshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstart
Temperature [°C] Temperature [°C]
Temperature [°C] Temperature [°C]
Temperature [°C]Temperature [°C]
Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Current Figure 4. Max. Inductor Current
Figure 5. Start up Current Figure 6. Start Threshold Voltage
IL(MAX)
IST Vth(H)
IOPR
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
6
Typical Perfo rma nce Characte ristic s (Continued)
(These characteristic graphs are normalized at Ta=25°C)
Fig. 7 Stop Threshold Volt a ge
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstop
Fi g .8 Ma xi mu m D u ty C yc l e
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig. 9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Vz
Fig.10 S hutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vsd
Fig.11 S hutdown De lay Cur rent
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Idelay
F ig. 12 Over Volt age Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vovp
Temperature [°C] Temperature [°C]
Temperature [°C] Temperature [°C]
Temperature [°C]Temperature [°C]
Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. VCC Zener Voltag e Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
Vth(L)
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
7
Typical Perfo rma nce Characte ristic s (Continued)
(These characteristic grahps are normalized at Ta=25°C)
Figure 13. Drain Source Turn-on Resistance
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25 0 25 50 75 100 125 150
Rdson
Temperature [°C]
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
8
Package Dimensions
TO-220F-4L
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
9
Package Dimensions (Continued)
TO-220F-4L (Forming)
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
10
Ordering Information
TU : Non Forming Type
YDTU : Forming Type
Product Number Package Rating Fosc
KA1L0380B-TU TO-220F-4L 800V, 3A 50kHz
KA1L0380B-YDTU TO-220F-4L(Forming)
KA1L0380RB-TU TO-220F-4L 800V, 3A 50kHz
KA1L0380RB-YDTU TO-220F-4L(Forming)
KA1M0380RB-TU TO-220F-4L 800V, 3A 67kHz
KA1M0380RB-YDTU TO-220F-4L(Forming)
KA1H0380RB-TU TO-220F-4L 800V, 3A 100kHz
KA1H0380RB-YDTU TO-220F-4L(Forming)
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
11
KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB
9/7/00 0.0m 001
Stock#DSxxxxxxxx
2000 Fairch il d Semiconduc tor International
LIFE SU PP ORT POL ICY
FAIRCHILD’S PRODUCTS AR E NOT AUTHORIZED FOR USE AS C RITICAL COMPONENTS I N LIFE S UPPORT DEVICE S
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or syst em who se failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effec tiv ene ss.
www.fairchildsemi.com
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRO DUCTS HEREIN TO IMPROVE RELIABILITY, FUN C TION OR DESIGN . FAIRCHILD DO ES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIG HTS, NOR THE RIGHTS OF OTHERS.