BC817-16 - DIODES INC. - Datasheet.Support

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Document number: DS11107 Rev. 21 - 2

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45V NPN SMALL SIGNAL TRANSISTOR IN SOT23

Features

 Ideally Suited for Automatic Insertion

 Epitaxial Planar Die Construction

 Complementary PNP Types Available (BC807)

 For switching and AF Amplifier Applications

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. "Green" Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 Automotive-Compliant Parts Are Available Under Separate

Datasheet (BC817-16Q_40Q)

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight 0.008 grams (Approximate)

Ordering Information (Note 4)

Product

Compliance

Marking

Reel Size (inches)

Tape Width (mm)

Quantity Per Reel

BC817-16-7-F

AEC-Q101

K6A

7

8

3,000

BC817-25-7-F

AEC-Q101

K6B

7

8

3,000

BC817-40-7-F

AEC-Q101

K6C

7

8

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2015

2016

2017

2018

2019

2020

2021

2022

2023

2024

2025

2026

Code

C

D

E

F

G

H

I

J

K

L

M

N

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

SOT23

Device Symbol

Top View

Pin-Out

XXX = Product Type Marking Code (See Table Above)

YM = Date Code Marking

Y = Year (ex: C = 2015)

M = Month (ex: 9 = September)

SOT23

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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

0.5

A

Peak Collector Current

ICM

1.0

A

Peak Base Current

IBM

200

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

PD

310

mW

(Note 6)

350

Thermal Resistance, Junction to Ambient

(Note 5)

RθJA

403

°C/W

(Note 6)

357

Thermal Resistance, Junction to Leads

(Note 7)

RθJL

350

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

ESD Ratings (Note 8)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

8,000

V

3B

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Notes: 5. For a device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper; device is measured under

still air conditions whilst operating in a steady-state.

6. Same as Note 5, except mounted on 15mm x 15mm 1oz copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

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Thermal Characteristics and Derating Information

025 50 75 100 125 150

0.0

0.1

0.2

0.3

0.4

Derating Curve

Temperature (oC)

Max Power Dissipation (W)

100μ 1m 10m 100m 110 100 1k

0

50

100

150

200

250

300

350

400

Transient Thermal Impedance

D=0.5

D=0.2 D=0.1 Single Pulse

D=0.05

Thermal Resistance (oC/W)

Pulse Width (s)

10m 100m 110 100 1k

0.1

1

10

Single Pulse. Tamb=25oC

Pulse Power Dissipation

Pulse Width (s)

Max Power Dissipation (W)

100µ

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

50

—

V

IC = 100µA

Collector-Emitter Breakdown Voltage

BVCEO

45

—

V

IC = 10mA

Emitter-Base Breakdown Voltage

BVEBO

5

—

V

IC = 100µA

Collector-Emitter Cut-Off Current

ICES

—

100

5.0

nA

µA

VCE = 45V

VCE = 25V, TJ = +150°C

Emitter-Base Cut-Off Current

IEBO

—

100

nA

VEB = 5.0V

DC Current Gain (Note 9)

BC817-16

BC817-25

BC817-40

hFE

100

160

250

—

250

400

600

—

VCE = 1.0V, IC = 100mA

BC817-16

BC817-25

BC817-40

60

100

170

—

VCE = 1.0V, IC = 300mA

Collector-Emitter Saturation Voltage (Note 9)

VCE(SAT)

—

0.7

V

IC = 500mA, IB = 50mA

Base-Emitter Voltage (Note 9)

VBE

—

1.2

V

VCE = 1.0V, IC = 300mA

Gain Bandwidth Product

fT

100

—

MHz

VCE = 5.0V, IC = 10mA,

f = 50MHz

Collector-Base Capacitance

CCBO

—

12

pF

VCB = 10V, f = 1.0MHz

Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

0

100

200

300

400

500

0 1 2

I , COLLECTOR CURRENT (mA)

C

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Figure 1 Typical Collector Current vs. Collector-Emitter Voltage

0

20

40

60

80

100

010 20

I , COLLECTOR CURRENT (mA)

C

V , COLLECTOR-EMITTER VOLTAGE (V)

Figure 2 Typical Collector Current vs. Collector-Emitter Voltage

CE

10

100

1,000

110

h , DC CURRENT GAIN

FE

I , COLLECTOR CURRENT (mA)

Figure 3 Typical DC Current Gain vs. Collector Current

C

V = 1V

CE

150 C°

T = 25 C

A°

-50 C°

100 1,000

0.1

0

0.1

0.2

0.3

0.4

0.5

110

V , COLLECTOR-EMITTER

SATURATION VOLTAGE (V)

CE(SAT)

I , COLLECTOR CURRENT (mA)

Figure 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

C

I / I = 10

CB

150 C°

25 C°

-50 C°

100 1,000

0.1

10

100

1,000

110 100 1,000

f , GAIN-BANDWIDTH PRODUCT (MHz)

T

I , COLLECTOR CURRENT (mA)

Figure 5 Gain-Bandwidth Product vs. Collector Current

C

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Package Outline Dimensions

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.

SOT23

Dim

Min

Max

Typ

A

0.37

0.51

0.40

B

1.20

1.40

1.30

C

2.30

2.50

2.40

D

0.89

1.03

0.915

F

0.45

0.60

0.535

G

1.78

2.05

1.83

H

2.80

3.00

2.90

J

0.013

0.10

0.05

K

0.890

1.00

0.975

K1

0.903

1.10

1.025

L

0.45

0.61

0.55

L1

0.25

0.55

0.40

M

0.085

0.150

0.110

a

0°

8°

--

All Dimensions in mm

Dimensions

Value (in mm)

C

2.0

X

0.8

X1

1.35

Y

0.9

Y1

2.9

X

Y

Y1 C

X1

J

K1 K

L1

GAUGE PLANE

0.25

H

L

M

All 7°

A

CB

D

G

F

a

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Document number: DS11107 Rev. 21 - 2

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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