HTMN5130SSD-13 - Diodes Incorporated

HTMN5130SSD

Document number: DS36319 Rev. 4 - 3

1 of 6

www.diodes.com

November 2015

HTMN5130SSD

ADVANCE INFO R MA T I O N

55V DUAL N-CHANNEL 175°C MOSFET

Product Summary

V(BR)DSS

RDS(on) max

TA = +25°C

55V

130mΩ @ VGS = 10V

2.86 A

200mΩ @ VGS = 4.5V

2.3 A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

 DC-DC Converters

 Power Management Functions

 Backlighting

Features and Benefits

 Low Input Capacitance

 Low On-Resistance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

HTMN5130SSD-13

SO-8

2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

Pin Configuration

Equivalent Circuit

D1S1

NOT RECOMMENDED FOR NEW DESIGN

NO ALTERNATE PART

HTMN5130SSD

Document number: DS36319 Rev. 4 - 3

2 of 6

www.diodes.com

November 2015

HTMN5130SSD

ADVANCE INFO R MA T I O N

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

2.6

t<10s

TA = +25°C

TA = +70°C

2.86

2.3

Pulsed Drain Current (10s pulse, duty cycle = 1%)

IDM

Continuous Source Current (Body Diode) (Note 6)

2.8

Pulsed Source Current (Body Diode)

ISM

Avalanche Current (Note 5) L =4.9mH

IAS

Avalanche Energy (Note 5) L = 4.9mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

TA = +25°C

TA = +70°C

1.7

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

11.2

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS



100

VDS = 55V, VGS = 0V

Gate-Source Leakage

IGSS



100

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)



VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



130

mΩ

VGS = 10V, ID = 3 A



200

VGS = 4.5V, ID = 1.5A

Diode Forward Voltage

VSD



1.0

VGS = 0V, IS = 1.5A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss



218.7



VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



97.8



Reverse Transfer Capacitance

Crss



22.4



Gate Resistance



3.75



VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 10V)



8.9



nC

VDS = 40V, ID = 2A

Total Gate Charge (VGS = 4.5V)



4.7



Gate-Source Charge

Qgs



1.0



Gate-Drain Charge

Qgd



2.9



Turn-On Delay Time

tD(on)



VGS = 10V, VDD = 25V, RG = 6Ω,

ID = 1A

Turn-On Rise Time



2.5



Turn-Off Delay Time

tD(off)



13.5



Turn-Off Fall Time



6.1



Body Diode Reverse Recovery Time

trr



30.8



IF = 1.5A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr



35.4



IF = 1.5A, dI/dt = 100A/μs

Notes: 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

HTMN5130SSD

Document number: DS36319 Rev. 4 - 3

3 of 6

www.diodes.com

November 2015

HTMN5130SSD

ADVANCE INFO R MA T I O N

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

I , DRAIN CURRENT (A)

0.0

2.0

4.0

6.0

8.0

10.0

V = 2.5V

V = 3.0V

V = 3.5V

V = 4.5V

V = 10V

V = 4.0V

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

I , DRAIN CURRENT (A)

0 1 2 3 4 5 6

V = 5.0V

DS T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

T = 175°C

I , DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0 2 4 6 8 10

V = 4.5V

V = 10V

I , DRAIN CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0.05

0.1

0.15

0.2

0.25

0.3

0 2 4 6 8 10

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 10V

T = 175°C

T , JUNCTION TEMPERATURE ( C)

Figure 5 On-Resistance Variation with Temperature

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

-50 -25 0 25 50 75 100 125 150 175

V = 4.5V

I = 2A

V = V

I = 5A

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

J

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

-50 -25 0 25 50 75 100 125 150 175

V = 4.5V

I = 5A

V = V

I = 10A

HTMN5130SSD

Document number: DS36319 Rev. 4 - 3

4 of 6

www.diodes.com

November 2015

HTMN5130SSD

ADVANCE INFO R MA T I O N

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

J

V , GATE THRESHOLD VOLTAGE (V)

GS(th)

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

-50 -25 0 25 50 75 100 125 150 175

I = 1mA

I = 250µA

V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

I , SOURCE CURRENT (A)

T = 25°C

V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

C , JUNCTION CAPACITANCE (pF)

100

1000

0 5 10 15 20 25 30 35 40

Ciss

Coss

Crss

f = 1MHz

Q (nC)

g, TOTAL GATE CHARGE

Figure 10 Gate Charge

V GATE THRESHOLD VOLTAGE (V)

0 2 4 6 8 10

V = 40V

I = A

HTMN5130SSD

Document number: DS36319 Rev. 4 - 3

5 of 6

www.diodes.com

November 2015

HTMN5130SSD

ADVANCE INFO R MA T I O N

Test Circuits

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SO-8

Dim

Min

Max

1.75

0.10

0.20

1.30

1.50

0.15

0.25

0.3

0.5

4.85

4.95

5.90

6.10

3.85

3.95

1.27 Typ

0.35

0.62

0.82



0

8

All Dimensions in mm

Gauge Plane

Seating Plane

Detail ‘A’

45°7°~9°

0.254

HTMN5130SSD

Document number: DS36319 Rev. 4 - 3

6 of 6

www.diodes.com

November 2015

HTMN5130SSD

ADVANCE INFO R MA T I O N

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

Dimensions

Value (in mm)

0.60

1.55

5.4

1.27