MAXIMUM RATINGS Characteristic Symbol Value Unit CASE 79-04, STYLE 1 TO-39 (TO-205AD Coltector-Emitter Voltage VCEO 40 Vdc ( ) Collector-Base Voltage VcBo 40 Vde 3 Collect ollector Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous lc 1.0 Adc 2 Total Device Dissipation @ Ta = 25C Pp 1.0 Watt Base Derate above 25C 5.71 mWw/c Total Device Dissipation @ Tc = 25C Pp 5.0 Watts 3 at 1 Emitter Derate above 25C 28.6 mWwrc Operating and Storage Junction Ty, Tstg | 65 to +200 C Temperature Range GENERAL PURPOSE THERMAL CHARACTERISTICS TRANSISTOR Characteristic Symbol Max Unit PNP SILICON Thermal Resistance, Junction to Ambient RaJA 0.175 CimW Thermal Resistance, Junction to Case Rec 35 CAV ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Coliector-Emitter Breakdown Voltage(1) ViIBRICEO 40 _ Vde (Ic = -10 mAde, lg = 0) Collector-Base Breakdown Voltage V(BR)CBO ~40 _ Vde (ip = 10 wAde, IE = 0) Emitter-Base Breakdown Voltage ViBRIEBO 5.0 _ Vde (IE = 10 pAde, Ic = 0) Base Cutoff Current IBEV _ 80 nAdc (VcE = 30 Vdc, Veg = -3.0 Vdc) Collector Cutoff Current IcEX _ 50 nAdc (VcE = 30 Vde, Ven = 3.0 Vdc) Collector Cutoff Current IcBo uAdc {Vcp = 30 Vdc, IE = 0) _ ~ 0.050 (Vcp = 30 Vdc, IE = 0, Ta = 100C) - ~10 Emitter Cutoff Current \EBO _ 30 nAdc (Veg = 4.0 Vde, Ic = 0) ON CHARACTERISTICS DC Current Gain(1) hee _ (l = -150 mAde, Vce = 1.0 Vde) 60 _ (lc = 500 mAdc, Vcg = 1.0 Vdc) 50 160 {lc = 1.0 Adc, Vce = 5.0 Vde) 25 - Collector-Emitter Saturation Voitage(1) VCE(sat} Vde {Ic = 150 mAdc, Ip = 15 mAdc) _ 0.3 {lc = 500 mAdc, Ig = 50 mAdc) _ 0.5 {lc = 1.0 Adc, Ig = 100 mAde) _ 1.0 MB 6567254 01034823 Sto Motorola Smail-Signal Transistors, FETs and Diodes Device Data 3-37 2N3244 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit Base-Emitter Saturation Voltage(1) VBE(sat) Vdc (ic = 150 mAde, Ip = ~ 18 mAde) _- -1.1 (I = 500 mAdsc, lp = 50 mAdc) -0.75 -1.5 (i = 1.0 Adc, Ip = 100 mAdc} _ 2.0 (Ic = 750 mA, lg = 75 mA) _ 2.0 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT 175 _- MHz (Ic = 50 mAdc, Vcg = 10 Vdc, f = 100 MHz) Output Capacitance Cobo _ 25 pF (Vcg = 10 Vdc, IE = 0, f = 100 kHz) Input Capacitance Cibo _ 100 pF (Veg = 0.5 Vde, Ic = 0, f = 100 kHz) SWITCHING CHARACTERISTICS Delay Time (lc = 500 mA, Igy = 50 mA td _ 15 ns Rise Time VBE = +2.0V, Vcc = 30V} tr _ 35 ns Storage Time (i = 800 mA, Vcc = 30V ts _ 140 ns Fall Time IB1 = 'p2 = ~50 mA) tf 45 ns Total Control Charge Qr _ 14 nc (ic = 500 mA, Ip = 50 MA, Vcc = ~30V} (1) Pulse Test: PW < 300 ys, Duty Cycle = 2.0%. FIGURE 1 MINIMUM CURRENT GAIN CHARACTERISTICS NORMALIZED hre 50 =100 200 500 1000 Ic, COLLECTOR CURRENT (mA) M 63967254 0103624 4? 3-38 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N3244 FIGURE 2 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS Ve, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) 05 =10 =20 50 =10 2% 50 100 =200 Ig, BASE CURRENT (mal FIGURE 3 MAXIMUM SATURATION VOLTAGES FIGURE 4 TYPICAL TEMPERATURE COEFFICIENTS +05 @yc for (25 to 126C} Vee 0 {sat _ (25 to 55C) a 2 a 2-05 = E us a (25 to 55C) = 2 5 B10 ys for VBE sat) g 8 VCE(sat) 15 (25 to 125C) 0 ~20 50 100 200 500 1000 0 ~200 400 600 800 1000 Ic. COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) MM 6367254 0103825 333 Motorola SmallSignal Transistors, FETs and Diodes Device Data 3-39 2N3244 FIGURE 5 JUNCTION CAPACITANCE Ty = 25C MAX TYR = & 8 a 5 = & -0.1 -02 -05 -10 -20 6.0 -10 20-30 REVERSE BIAS {VOLTS} FIGURE 7 CHARGE DATA 20 Br = 10 LUMIT Ty = 26C | TYPICAL 10 Veco = OV a 80 = Ww z B 20 Op 2N3244 05 50 100 ~ 200 500 1000 le, COLLECTOR CURRENT (mA) FIGURE 9 TURN-OFF EQUIVALENT TEST CIRCUIT +85V ~30V 1 | lo <t, < 5004s ee ee th < Sas 599 | t>lys ; | SCOPE m115 200 Tf oe uke | OUTY CYCLE = 2% TIME (ns) FIGURE 6 TYPICAL SWITCHING TIMES Veo = 40V Vee = +2.0 140 Ty = 25C Bre 0 ip = leg 100 Br = 30 a0 0 uot = 100 200 300 =400 600 -800 Ic, COLLECTOR CURRENT (mA) FIGURE & TURN-ON EQUIVALENT TEST CIRCUIT 42 30 o 597 SCOPE 1075V 200 2 PW = 200 ns RISE TIME == 2 ns DUTY CYCLE = 2% = FIGURE 10 Q7 TEST CIRCUIT 180.9 av 10V t yr AY 1045 DUTY CYCLE = 2% 1400 pf max MB 63567254 O01038eb 2?T 3-40 Motorola Smatl-Signal Transistors, FETs and Diodes Device Data