International Rectifier HEXFET Power MOSFET PD-9.439C IRFD9220 @ Dynamic dv/dt Rating Repetitive Avalanche Rated D _ For Automatic Insertion Voss = -200V @ End Stackable P-Channel G Rps(on) = 1.50 e Fast Switching @ Ease of Paralleling S Ip = -0.56A Description . The HEXFET technology is the key to international Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt. HD-1 Absolute Maximum Ratings Parameter Max. Units Ib @ Tc = 25C Continuous Drain Current, Vas @ -10 V -0.56 Ip @ Tc = 100C | Continuous Drain Current, Ves @ -10 V -0.36 A lbm Pulsed Drain Current 45 Pp @ Tc = 25C __| Power Dissipation 1.0 Ww : Linear Derating Factor 0.0083 WC Vas Gate-to-Source Voltage 20 Vv Eas Single Pulse Avalanche Energy 420 mJ lan Avalanche Current -0.56 A Ear Repetitive Avalanche Energy 0.10 mJ dv/dt Peak Diode Recovery dv/dt -5.0 Vins Ty Operating Junction and -55 to +150 Tste Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units _| Raia Junction-to-Ambient 120 | c 557IRFD9220 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vier)oss Drain-to-Source Breakdown Voltage -200 | _ V__ | Vas=0V, lp=-2501A AVerypss/ATy| Breakdown Voltage Temp. Coefficient |-0.22; | V/C | Reference to 25C, Ip=-1mA Rosjon) Static Drain-to-Source On-Resistance = _ 1.5 Q | Vas=-10V, In=-0.34A Vesith) Gate Threshold Voltage -2.0 _ -4.0 Vs | Vos=Vas, lp=-250nA Os Forward Transconductance 0.55 | _ S| Vps=-50V, Ip=-0.35A loss Drain-to-Source Leakage Current ae el pA Vos=-200V, Vas=0V | -500 Vos=-160V, Vas=0V, Ty=125C less Gate-to-Source Forward Leakage | -100 nA Ves=-20V Gate-to-Source Reverse Leakage _ | 100 Ves=20V Qg Total Gate Charge _ _ 15 [p=-2.1A | Qgs Gate-to-Source Charge _ | 3.2 | nC | Vps=-160V Qoa Gate-to-Drain (Miller') Charge _ _ 8.4 Vas=-10V See Fig. 6 and 13 @ taton) Tum-On Delay Time _ 8.8 _ | Voo=-100V tr Rise Time _ 27 = ns Ip=-3.9A ta(ott Turm-Off Delay Time _ 7.3 _ Ro=182 t Fall Time _ 19 = Ro=24Q._ See Figure 10 @ Lp Internal Drain Inductance | 40 _ BO ond ) Z nH | from package il Ls Internal Source Inductance | 60} and center of a die contact 8 Ciss Input Capacitance | 340 | Vgs=0V Coss Output Capacitance |; 110 | | PF | Vps=-25V Ciss Reverse Transfer Capacitance _ 33 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current MOSFET symbol D (Body Diode) | [088 a__ | Showing the Ism Pulsed Source Current _ | 45 integral reverse @ (Body Diode) . p-n junction diode. 8 Vsp Diode Forward Voltage | | 63] Vv ee Is=-0.58A, Vas=0V tr Reverse Recovery Time | 150 | 300 | ns_| Ty=25C, Ir=-3.9A Qr Reverse Recovery Charge | 097; 2.0 | pC |di/dt=100A/is @ Notes: @ Repetitive rating; pulse width limited by max. junction temperature (See Figure 11) Vpp=-50V, starting T=25C, L=130mH Ra@=25Q, las=-2.2A (See Figure 12) Isps-3.9A, di/dt<95A/us, Vop<V(BR)DSs, Tys150C. @ Pulse width < 300 1s; duty cycle <2%. 558-Ip, Drain Current (Amps) -Ip, Drain Current (Amps) 104 ~4,5V 109 20us PULSE WIDTH To = 26C 40 -Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vpg = 50V 20us PULSE WIDTH -Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Rps(on), Drain-to-Source On Resistance -Ip, Drain Current (Amps) (Normalized) IRFD9220 20us PULSE WIDTH To = 150C -Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=150C Ves = -10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 559IRFD9220 20 = Cgg + Cog Cag Coq Cas + rn o fo Q Capacitance (pF) -Vag, Gate-to-Source Voltage (volts) SEE FIGURE 13 -Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 10? 5 OPERATION IN THIS AREA LIMITED 8 Fos (on) E a < Bio Cc D < 5 =, c g a = 1 a 5 @ 9 pad s a: 0.4 & pot a Te =25C 2 2 Te 180%C Veg = OV SINGLE 0. 0 4.0 4 0.4 2 5 1 2 5 10 2 402 2 5 403 -Vgp, Source-to-Drain Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 560-lp, Drain Current (Amps) IRFD9220 Vos > \T-10V Pulse Width < ips Duty Factor s 0.1% Fig 10a. Switching Time Test Circuit faon) tr tao) Ves 10% a5 50 75 100 125 450 20% Tc, Case Temperature (C) Vos Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 103 3 102 3 N oO on 5 10 Qa no cc oe 4 = SINGLE PULSE Fou r (THERMAL RESPONSE) an 0.4 rt eal 1. DUTY FACTOR, D=t1/t2 2. PEAK T3=Pom xX Zthjc + To 10 195 10-4 10? 107 0.4 4 10 402 103 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 561IRFD9220 Vary tp to obtain VDS> required las TOP 7. 1.44 BOTTOM -2.2A Fig 12a. Unclamped Inductive Test Circuit lg - Eas, Single Pulse Energy (mJ) Vps 25 50 75 100 125 150 Starting Ty, Junction Temperature(C) Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Same Type as D.U.T. J 12V 72n | = .3pF Q ST + Qas +- Qed Ves Ve Ie *F | Charge Current Sampling notietors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1506 Appendix B: Package Outline Mechanical Drawing See page 1507 Appendix C: Part Marking Information See page 1515 Intemational Rectifier 562