TOSHIBA {DISCRETE/0OPTO} 44 ve Bs097aso QOO1b764 4 T 9097250 TOSHIBA <(DISCRETE/OPTO) ~ 98D 16769 DT-39-\3 | SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2SK794 TECHNICAL DATA SILICON N CHANNEL MOS TYPE (7-MOS) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. 1S9MAX, 52402 / FEATURES: a AAS High Breakdown Voltage : V(BR)DSS900V Vs \j_t 3 - High Forward Transfer Admittance : |Ygl=1.7S(Typ.) 4 by oh 4 a Low Leakage Current : Iggg=tl00nA(Max:) (Vg=t20v) all, . al & Ipss= 300A (Max. ) (Vps=900V) " 0 3 . Enhancement-Mode : Veh=l.5~3.5V (Ip=1mA) # d MAXIMUM RATINGS (Ta=25c) _} 845402 CHARACTERISTIC SYMBOL RATING UNIT ]] . 4 Drain-Source Voltage Vpsx 900 v |i 3] 9? ays o Gate-Source Voltage VG6ss 20 Vv aj_ r..&. Ft 3 td Drain Current be Ip 5 A Pulse Ipp 10 L GATE 2 DRALN (HEAT BINK) Drain Power Dissipation . & SOURCE =: | (rex25C) Pp 150 " Channel Temperature Teh 150 c a = Storage Temperature Range Tstg -55~150} C TOSHIBA Bo 1601p ELECTRICAL CHARACTERISTICS (ra=25C) Weight : 4.68 CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT . Gate Leakage Current Igss Ves*t20V, Vps=0 - ~ {100 nA Drain Cut-off Current Ipss Vps=900V, Vos=0 - - 300 uh Drain-Source Breakdown Voltage|V(BR)DSS | Ip=10mA, Vgs=0 900 ~ - Vv Gate Threshold Voltage Vth Vps#10V, Ip=1mA 1.5 - 3.5 Vv Forward Transfer Admittance lgsl | Vps=10V, Ip=3A 1.0 { 1.7 - s Drain-Source ON Resistance Rps(on) | Ip"3A, Ves=10V - 2.1 | 2.5 a Drain-Source ON Voltage Vps (On) | Ip=5A, VGos=lov - il 13 Vv Input Capacitance Ciss Vps=25V, Ves=0, f=1MHz ~ {1400 {1900 pF Reverse Transfer Capacitance Crss Vps=25V, Vgs=0, =1MHz - 110 200 pF Output Capacitance Coss Vps=25V, Vos=0, f=1MRz - 190 | 300 pF . Tp=sa - 10 | 22 Rise Time tr lov vin = Your 1 220 Turn-on Time ton of | C 5 - 130 | 260 Switching Time 10us ns Fall Time te vppezoov |_7 90 | 260 Vnitr. tr<Sne Turn-off Time toff |pusi% (zoyp=50N) - 480 | 900 TOSHIBA CORPORATION QTIA2A ~ 138 TOSHIBA {LDISCRETE/0OPTO} 44 pe Wso97250 OO1lb?70 5 I 9097250 TOSHIBA (DISCRETE/OPTO) 99D 16770 D7-39-\3 PMN SEMICONDUCTOR - 2SK794 TECHNICAL DATA Vos ~ Vas > COMMON 50 coun S URCE Te= 25 ~ SOURCE 8 = Te=25T > 5 ) 3 t E 3 a > g g 3 5 9 = 4 : e c a 16. 20. 24 DRAIN-SOURCE VOLTASE Vps (V) @ATE-SOURCE VOLTAGE Vag () Ip Vag 'Yfs - Ip 8 & COMOX SOURCE = COMMON SOURZE ~ Vps=10V = Te=25C = E ~ oo = & ~ a =e 1 . e E_cs 5 ge g gr 0s xz 2 = < . a Ee a1 E Pp PR a 1 3 io DRAIN CURREKT Ip (A) 0 z 6 10 GATE-SOURCE VOLTAGE Vgg (V) {Yrs! Ip Ip Te 2 COMMON SOURCE Gs=1oy o = 2 Vps = 10V a 7 & = & 6 z 2 <n 1 55 _ & z E_ as g 5 Ze 2 e= a3 2 = = a _ ae = COMMON SOURCE $ 4 Vps =10v Oo8 1 3 10 - - 0 2 40 69 60 00 DRAIN CURRENT Ip (A) CASE TEMPERATURE Te (TC) TOSHIBA CORPORATION STIA2A ~139 TOSHIBA {DISCRETE/OPTOF 44 ve Baoazeso OOLL??1 7? i 9087250 TOSHIBA (DISCRETE/OPTO) 89D 1677 DI-39-13 SEMICONDUCTOR TECHNICAL DATA CaP 2S5K794 Rps(on) Ip Ipr - Vos COMMON SOURCE To = 25T D COMMON SOURCE Vag = i10V aot tIpr s Rps(on) (2) 9 -O -G4 -G6 -G8 -10 -12 -l DRAIN-SOURCE ON RESISTANCE DRAIN REVERSE CURRENT Ipr (A) DRAIN-SOURCE VOLTAQE Vpg () 9 2 4 6 8 10 DRAIN CURRENT Ip (A) SWITCHING TIME Ip 1000 CAPACITANCE Vog couyon SOURCE < Van 200V 300 pp 200 na Te = 256 oo C7 rt) a Y s Zz 10 " . g =z sc _ = 5 Ip Your 3 2 39 IOV vey . < = ol | i a COM/ON EOURCE puTy evcLesct Ob og . Yas = 90 : Vay tre te<$ne lous & Yop f= iMiz 10 Te = 250 - . 10 30 DRAIN CURRENT Ip (A) Qa 1 3 10 30 200 DRAIN-SOURCE VOLTAGE Ypg (V) SAFE OPERATING AREA 20 eet TT Pp ~ Te Ip MAX. (PULSED) | 5 ~ 10 wy 4 = ~ Ip MAX. v i tS | * < 0 AL v, < 2 Oo, 4, om aad (CONTINUOUS ) , a 3 . 5 a al = 5 a 1 z & B ast . E 03; sINoLs 'NONREFETITIVE .7 : F. z PULSE Tc = 25C NS 3 + CURVES MUST BE DERATED = Ql, LINEARLY WITH INCREASE R = FIN TEMPERATURE. > = oO 008 Cau pa 4 A . a 40 60 12 160 200 3 10 80 100 300 =.1000 CASE TEMPERATURE Te () DRAIN-GOURCE VOLTAGE Vpg (V) TOSHIBA CORPORATION GTIA2A 140-