MRFE6S9125NR1 MRFE6S9125NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these de-
vices make them ideal for large -signal, common-source amplifier applications
in 28 volt base station equipment.
N- CDMA Application
•Typical Single- Carrier N- CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 950 mA, Pout = 27 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth
•Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
Pout = 60 Watts Avg., Full Frequency Band (865- 960 MHz or 920- 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.8% rms
GSM Application
•Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =
125 Watts, Full Frequency Band (920 -960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%
Features
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Internally Matched for Ease of Use
•Integrated ESD Protection
•225°C Capable Plastic Package
•RoHS Compliant
•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +66 Vdc
Gate- Source Voltage VGS -0.5, +12 Vdc
Maximum Operation Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature (1,2) TJ225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
RθJC
0.44
0.45
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFE6S9125N
Rev. 0, 10/2007
Freescale Semiconductor
Technical Data
880 MHz, 27 W AVG., 28 V
SINGLE N- CDMA, GSM EDGE
LATERAL N -CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB- 4
PLASTIC
MRF6S9125NR1
CASE 1484-04, STYLE 1
TO-272 WB- 4
PLASTIC
MRF6S9125NBR1
MRFE6S9125NR1
MRFE6S9125NBR1
Freescale Semiconductor, Inc., 2007. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1B (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J - STD-020 3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 10 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 µAdc)
VGS(th) 1 2.1 3 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)
VGS(Q) 2 2.86 4 Vdc
Drain-Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
VDS(on) 0.05 0.24 0.3 Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.9 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 64 — pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss — 350 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N -CDMA, f = 880 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain Gps 19 20.2 24 dB
Drain Efficiency ηD29 31 — %
Adjacent Channel Power Ratio ACPR — -45.7 -44 dBc
Input Return Loss IRL — -18 -9 dB
1. Part is internally input matched.
(continued)
MRFE6S9125NR1 MRFE6S9125NBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA,
Pout = 60 W Avg., 920- 960 MHz, EDGE Modulation
Power Gain Gps — 20 — dB
Drain Efficiency ηD— 40 — %
Error Vector Magnitude EVM — 1.8 — % rms
Spectral Regrowth at 400 kHz Offset SR1 — -63 — dBc
Spectral Regrowth at 600 kHz Offset SR2 — -78 — dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 920-960 MHz
Power Gain Gps — 19 — dB
Drain Efficiency ηD— 62 — %
Input Return Loss IRL — -12 — dB
Pout @ 1 dB Compression Point, CW
(f = 880 MHz)
P1dB — 125 — W
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, 865-900 MHz Bandwidth
Video Bandwidth @ 125 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
— 10 —
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 27 W Avg. GF— 0.93 — dB
Gain Variation over Temperature
(-30°C to +85°C)
∆G — 0.011 — dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
∆P1dB — 0.205 — dBm/°C
4
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
Figure 1. MRFE6S9125NR1(NBR1) Test Circuit Schematic
Z10 0.057″ x 0.620″ Microstrip
Z11 0.119″ x 0.620″ Microstrip
Z12 0.450″ x 0.220″ Microstrip
Z13 0.061″ x 0.220″ Microstrip
Z14 0.078″ x 0.220″ Microstrip
Z15 0.692″ x 0.080″ Microstrip
Z16 0.368″ x 0.080″ Microstrip
PCB Arlon CuClad 250GX -0300-55- 22, 0.030″, εr = 2.55
Z1, Z17 0.200″ x 0.080″ Microstrip
Z2 1.060″ x 0.080″ Microstrip
Z3 0.382″ x 0.220″ Microstrip
Z4 0.108″ x 0.220″ Microstrip
Z5 0.200″ x 0.420″ x 0.620″ Taper
Z6 0.028″ x 0.620″ Microstrip
Z7 0.236″ x 0.620″ Microstrip
Z8 0.050″ x 0.620″ Microstrip
Z9 0.238″ x 0.620″ Microstrip
R2
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C3
L1
Z1
C2
Z2 Z3
C1
Z4 Z5 Z6 Z7
C4
Z8
Z9
R1
L2
C10 C6
C11
C18 C20 C21 C22
C9
Z10 Z11 Z12 Z14 Z15
+
+ + +
C8
+
C7
+
C5
C12 C13
Z13
C14 C15 C16
Z16
C17
Z17
C23C19
Table 6. MRFE6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 20 pF Chip Capacitor ATC100B200FT500XT ATC
C2 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC
C3, C15 0.8-8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson
C4, C5 11 pF Chip Capacitors ATC100B110FT500XT ATC
C6, C18, C19 0.56 µF, 50 V Chip Capacitors C1825C564J5RAC Kemet
C7, C8 47 µF, 16 V Tantalum Capacitors T491B476K016AT Kemet
C9, C23 47 pF Chip Capacitors ATC700B470FT500XT ATC
C10 100 µF, 50 V Electrolytic Capacitor MCHT101M1HB - 1017- RH Multicomp
C11, C12 12 pF Chip Capacitors ATC100B120FT250XT ATC
C13, C14 5.1 pF Chip Capacitors ATC100B5R1BT250XT ATC
C16 0.3 pF Chip Capacitor ATC700B0R3BT500XT ATC
C17 39 pF Chip Capacitor ATC700B390FT500XT ATC
C20, C21 22 µF, 35 V Tantalum Capacitors T491X226K035AT Kemet
C22 470 µF, 63 V Electrolytic Capacitor EKME630ELL471MK25S Multicomp
L1 7.15 nH Inductor 1606-7J CoilCraft
L2 8.0 nH Inductor A03T CoilCraft
R1 15 Ω, 1/3 W Chip Resistor CRCW121015R0FKEA Vishay
R2 560 kΩ, 1/4 W Resistor CRCW12065600FKEA Vishay
MRFE6S9125NR1 MRFE6S9125NBR1
5
RF Device Data
Freescale Semiconductor
Figure 2. MRFE6S9125NR1(NBR1) Test Circuit Component Layout
CUT OUT AREA
C9
R2
C10
VGG VDD
C8 C7
C1
C2
C3
C5
L1
C4
C6
C12
C13 C15 C16
C17
C14
L2
C11 C23
C18
C19
C20 C21 C22
900 MHz
TO272 WB
Rev. 0
R1
6
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
TYPICAL CHARACTERISTICS
0
−5
−10
−15
−20
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
980820
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N- CDMA Broadband Performance
@ Pout = 27 Watts Avg.
960940920900880860
−70
40
20
−40
−50
ηD, DRAIN
EFFICIENCY (%)
VDD = 28 Vdc, Pout = 27 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
−60
−30
30
21
20
18
16
15
14
17
19
ALT1
840
IRL
ηD
0
−5
−10
−15
−20
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
980820
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N- CDMA Broadband Performance
@ Pout = 62.5 Watts Avg.
960940920900880860
−60
60
40
−30
−40
ηD, DRAIN
EFFICIENCY (%)
VDD = 28 Vdc, Pout = 62.5 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
−50
30
50
20
18
16
15
13
17
19
ALT1
840
IRL
ηD
Figure 5. Two- Tone Power Gain versus
Output Power
100
16
1
IDQ = 1475 mA
Pout, OUTPUT POWER (WATTS) PEP
22
19
17
10 300
Gps, POWER GAIN (dB)
475 mA
20
18
1187 mA
712 mA
950 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−20
1
IDQ = 475 mA
Pout, OUTPUT POWER (WATTS) PEP
100
−30
−40
−50
10
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
−10
712 mA
300
−60
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
1425 mA
950 mA
14
21
1187 mA
MRFE6S9125NR1 MRFE6S9125NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
10
−100
0
7th Order
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
−20
−40
1 400
IMD, INTERMODULATION DISTORTION (dBc)
−60
100
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
TWO−TONE SPACING (MHz)
IM3−U
−20
−30
−40
−50
80
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 950 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Figure 9. Pulsed CW Output Power versus
Input Power
37
P6dB = 53.39 dBm (218.27 W)
Pin, INPUT POWER (dBm)
58
56
52
3230 3634
Actual
Ideal
50
54
29
Pout, OUTPUT POWER (dBm)
P3dB = 52.83 dBm (191.87 W)
P1dB = 51.92 dBm
(155.6 W)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
Figure 10. Single-Carrier N- CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
−80
Pout, OUTPUT POWER (WATTS) AVG.
−20
−50
−60
−70
1 10 100
VDD = 28 Vdc, IDQ = 950 mA
f = 880 MHz, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
Gps
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ηD
200
ALT1
TC = −30_C
85_C
25_C
25_C
85_C
−30_C
25_C
85_C
IM3−L
IM5−U
IM5−L
IM7−U
IM7−L
31 33 35
−40
−30
VDD = 28 Vdc, IDQ = 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW
12 µsec(on), 1% Duty Cycle, f = 880 MHz
−60
−10
1
57
55
53
51
0
10
20
30
40
50
60
−30_C
−80
59
60
38 39
70 −10
−30_C25_C
85_C
ACPR
8
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
TYPICAL CHARACTERISTICS
ηD, DRAIN EFFICIENCY (%)
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
14 0
Pout, OUTPUT POWER (WATTS) CW
80
22
60
21
50
30
20
1 10 100
18
Gps
Gps, POWER GAIN (dB)
10
ηD
300
85_C
20
19
40
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
Gps, POWER GAIN (dB)
VDD = 24 V
280
16
21
0 200
17
40
19
18
20
IDQ = 950 mA
f = 880 MHz
28 V
32 V
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device is
operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 31%.
MTTF calculator available at http://www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
17
70
25_C
15
16 VDD = 28 Vdc
IDQ = 950 mA
f = 880 MHz
TC = −30_C
25_C85_C
−30_C
80 120 160 240
MRFE6S9125NR1 MRFE6S9125NBR1
9
RF Device Data
Freescale Semiconductor
N-CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 14. Single-Carrier CCDF N-CDMA
10
1
0.1
0.01
0.001
2468
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
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−60
−110
−10
(dB)
−20
−30
−40
−50
−70
−80
−90
−100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7 2.2
1.5
0−0.7
−1.5
−2.2
−2.9
−3.6 3.6
f, FREQUENCY (MHz)
Figure 15. Single-Carrier N- CDMA Spectrum
−ACPR in 30 kHz
Integrated BW
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
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RF Device Data
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MRFE6S9125NR1 MRFE6S9125NBR1
f = 860 MHz
Figure 16. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
860
865
870
1.48 - j0.14
1.66 - j0.02
1.56 - j0.09
0.62 - j2.13
0.64 - j2.31
0.62 - j2.45
VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg.
875
880 1.74 + j0.11
1.73 + j0.040.59 - j2.43
0.57 - j2.42
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
885
890
895
1.68 + j0.19
1.52 + j0.33
1.61 + j0.25
0.54 - j2.36
0.57 - j2.18
0.58 - j1.94
900 1.48 + j0.370.59 - j1.86
Zo = 5 Ω
f = 900 MHz Zsource
f = 900 MHz
f = 860 MHz
Zload
MRFE6S9125NR1 MRFE6S9125NBR1
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PACKAGE DIMENSIONS
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MRFE6S9125NR1 MRFE6S9125NBR1
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MRFE6S9125NR1 MRFE6S9125NBR1
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
•AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over -Molded Plastic Packages
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Oct. 2007 •Initial Release of Data Sheet
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RF Device Data
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MRFE6S9125NR1 MRFE6S9125NBR1
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Document Number: MRFE6S9125N
Rev. 0, 10/2007
