1SS355 SILICON EPITAXIAL
HIGH SPEED SWITCHING DIODE
FEATURES :
• Smal plastic package suitable for surface mounted design
• High Speed (Trr = 1.2 ns Typ.)
• High reliability with high surge current handling capability
• Pb / RoHS Free
APPLICATIONS
• High speed switching
DESCRIPTION
• Silicon planar zener diode in a small
plastic SMD SOD-323 package
Maximum Ratin
g
s and Thermal Characteristics
(
Ratin
g
at 25 °C ambient tem
p
erature unless otherwise s
p
ecifie
d
.
)
Symbol Value Unit
VRRM 90 V
VRM 80 V
Maximum Average Forward Current IF100 mA
Maximum Peak Forward Current IFM 255 mA
Maximum Surge Current (1s) IFSM 500 mA
Maximum Junction Temperature TJ125 °C
Storage Temperature Range TS-55 to + 125 °C
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Parameter Symbol Min. Typ. Max. Unit
Forward Voltage VFIF = 100 mA - - 1.2 V
Reverse Current IRVR = 80 V - - 0.1 μA
Capacitance between terminals CT- - 3.0 pF
IF = 10 mA , VR = 6 V
RL = 100 Ω
Page 1 of 2 Rev. 02 : February 20,2006
f = 1MHz ; VR = 0.5
Reverse Recovery Time ns4.0--Trr
Parameter
Maximum Peak Reverse Voltage
Maximum DC Reverse Voltage
Test Condition
1.10
0.80
0.40
1.35
1.15
2.80
2.30
0.25
1.80
1.60
0.15 (max
)
Dimensions in millimeters
SOD-323
RATING AND CHARACTERISTIC CURVES ( 1SS355 )
FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM SURGE CURRENT
0 25 50 75 100 125 150 175 0.1 1 10 100 1000 10000
A
MBIENT TEMPERATUR
E
,
(
°C
)
PULSE WIDTH, tp (ms)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE, VOTES
Page 2 of 2 Rev. 02 : February 20,2006
Ta = 25 °C
Ta = 125 °C
80 100 1400 20 40 60 120
FORWARD CURRENT, AMPERES
REVERSE CURRENT, AMPERES
AVERAGE FORWARD O UTPUT
CURRENT, MILLIAMPERES
80
60
40
20
100
0
SURGE CURRENT, AMPERES
100
1
10
10m
Ta = 25 °C
1m
100
μ
100m
10.1m
1μ
100n
10n
10μ
