1SS355 SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE FEATURES : SOD-323 * Smal plastic package suitable for surface mounted design * High Speed (Trr = 1.2 ns Typ.) * High reliability with high surge current handling capability * Pb / RoHS Free 1.80 1.35 1.15 0.80 APPLICATIONS 1.10 0.40 0.25 1.60 0.15 (max) * High speed switching DESCRIPTION * Silicon planar zener diode in a small plastic SMD SOD-323 package 2.80 2.30 Dimensions in millimeters Maximum Ratings and Thermal Characteristics (Rating at 25 C ambient temperature unless otherwise specified.) Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRRM 90 V Maximum DC Reverse Voltage VRM 80 V Maximum Average Forward Current IF 100 mA Maximum Peak Forward Current IFM 255 mA Maximum Surge Current (1s) IFSM 500 mA Maximum Junction Temperature TJ 125 C Storage Temperature Range TS -55 to + 125 C Electrical Characteristics Parameter (Ta = 25C unless otherwise noted) Symbol Test Condition Min. Typ. Max. Unit Forward Voltage VF IF = 100 mA - - 1.2 V Reverse Current IR VR = 80 V - - 0.1 A Capacitance between terminals CT f = 1MHz ; VR = 0.5 - - 3.0 pF - - 4.0 ns Reverse Recovery Time Page 1 of 2 Trr IF = 10 mA , VR = 6 V RL = 100 Rev. 02 : February 20,2006 RATING AND CHARACTERISTIC CURVES ( 1SS355 ) FIG.2 - MAXIMUM SURGE CURRENT 100 SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, MILLIAMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 80 60 40 20 0 0 25 50 75 100 125 150 100 10 1 0.1 175 1 AMBIENT TEMPERATURE, ( C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS 1000 10000 0.1m Ta = 125 C REVERSE CURRENT, AMPERES FORWARD CURRENT, AMPERES 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1 100m 10m Ta = 25 C 1m 100 10 1 Ta = 25 C 100n 10n 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE, VOLTS Page 2 of 2 10 PULSE WIDTH, tp (ms) 1.4 0 20 40 60 80 100 120 140 REVERSE VOLTAGE, VOTES Rev. 02 : February 20,2006