MIXA 80R1200VA Boost / Brake Module XPT IGBT VCES = 1200 V IC25 = 120 A VCE(sat) = 2.2 V Part name (Marking on product) MIXA80R1200VA 6/7 Preliminary data 1/2 1 4 2 5 9 10 6 4/5 7 9 Features: Application: Package: * Isolation voltage 3600 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * Improved temperature & power cycling * Power Factor Correction * Boost Converter * Brake Unit * DCB ceramic base plate * Easy to mount with 2 screws * Space and weight savings * UL pending E 72873 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 10 20110307a 1-6 MIXA 80R1200VA Boost/Brake IGBT Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 77 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 3 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V typ. max. Unit 1200 V 20 30 V V TC = 25C TC = 80C 120 84 A A TC = 25C 390 W 2.2 V V TVJ = 25C continuous transient TVJ = 25C TVJ = 125C 1.9 2.2 5.4 6.0 6.5 V 0.03 0.2 0.6 mA mA 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 75 A 230 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 75 A VGE = 15 V; RG = 10 W TVJ = 125C 70 40 250 100 6.8 8.3 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = 15 V; RG = 10 W; TVJ = 125C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current RthJC thermal resistance junction to case VCE = 900 V; VGE = 15 V; RG = 10 W; non-repetitive TVJ = 125C 225 A 10 s A 0.32 K/W 300 Boost/Brake Diode Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 100 A; VGE = 0 V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1600 A/s IF = 100 A RthJC thermal resistance junction to case min. typ. max. Unit TVJ = 25C 1200 V TC = 25C TC = 80C 135 90 A A 2.3 2.4 V V TVJ = 25C TVJ = 125C 2.0 2.1 TVJ = 125C 12.5 100 350 4 C A ns mJ 0.4 K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307a 2-6 MIXA 80R1200VA Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage Md mounting torque (M5) a allowable acceleration RthCH thermal resistance case to heatsink Conditions min. -40 -40 IISOL < 1 mA; 50/60 Hz Weight Ratings typ. max. 125 150 125 Unit C C C 3000 3600 V~ V~ 2.5 Nm 50 m/s2 t = 1 min. t=1s 2 0.3 K/W 35 g TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110307a 3-6 MIXA 80R1200VA Outline Drawing Dimensions in mm (1 mm = 0.0394") 0,25 35 26 63 31,6 3,3 0,5 2 17 0,25 13 R2 50 0,2 38,6 14 0,3 14 0,3 7 0,3 7 0,3 4x45 5 4 3 2 23,5 0,1 5,5 10 9 8 7 6 15 R R 5,5 11 0,3 11 0,3 1 R1 25,75 0,15 51,5 0,3 0,5 Product Marking Part number M I XA 80 R 1200 VA Logo XXX XX-XXXXX Marking on product yywwA Date Code Production Index Ordering Part Name Marking on Product Standard MIXA80R1200VA MIXA80R1200VA IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved = Module = IGBT = XPT standard = Current Rating [A] = Boost/Brake Chopper = Reverse Voltage [V] = V1-A-Pack Delivering Mode Base Qty Ordering Code Box 10 510585 20110307a 4-6 MIXA 80R1200VA IGBT 140 IC [A] 140 VGE = 15 V 120 120 100 100 TVJ = 25C 80 60 IC TVJ = 125C [A] 20 20 1.0 1.5 2.0 2.5 3.0 9V 60 40 0.5 0 0.0 3.5 11 V TVJ = 125C 80 40 0 0.0 13 V VGE = 15 V 17 V 19 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 140 IC = 75 A VCE = 600 V 120 15 100 80 VGE [A] 60 [V] IC 40 5 TVJ = 125C 20 0 10 TVJ = 25C 5 6 7 8 9 10 11 12 0 13 0 50 100 150 16 9 10 E E 8 [mJ] 6 [mJ] 4 Eoff 0 0 20 40 Eoff 8 7 Eon IC = 75 A VCE = 600 V VGE = 15 V TVJ = 125C 6 Eon 2 300 10 RG = 10 VCE = 600 V VGE = 15 V TVJ = 125C 12 250 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 14 200 QG [nC] VGE [V] 60 80 100 120 140 160 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 5 8 10 12 14 16 18 20 22 24 RG [] Fig. 6 Typ. switching energy vs. gate resistance 20110307a 5-6 MIXA 80R1200VA Diode 200 24 TVJ = 125C VR = 600 V 20 150 200 A Qrr 16 IF 100 [A] 100 A [C] 12 TVJ = 125C 50 TVJ = 25C 0 0.0 0.5 1.0 50 A 8 1.5 2.0 2.5 4 1000 3.0 1200 1400 160 2000 2200 700 TVJ = 125C 140 [A] 1800 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt Fig. 7 Typ. Forward current versus VF IRM 1600 diF /dt [A/s] VF [V] 200 A 600 100 A 500 VR = 600 V 120 trr 50 A 100 TVJ = 125C VR = 600 V 200 A 400 [ns] 300 80 100 A 200 60 50 A 100 40 1000 1200 1400 1600 1800 2000 0 1000 2200 1200 1400 1600 1800 2000 2200 diF /dt [A/s] diF /dt [A/s] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 1 8 200 A TVJ = 125C VR = 600 V Diode 6 IGBT 100 A Erec ZthJC 0.1 4 [mJ] 50 A IGBT [K/W] 1 2 3 4 2 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/s] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 0.01 0.001 0.01 FRD Ri ti Ri ti 0.072 0.037 0.156 0.055 0.002 0.03 0.03 0.08 0.092 0.067 0.155 0.086 0.002 0.03 0.03 0.08 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance 20110307a 6-6