P2N2907A Amplifier Transistor PNP Silicon Features * Pb-Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO -60 Vdc Collector -Base Voltage VCBO -60 Vdc Emitter -Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER MARKING DIAGRAM 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 3 P2N2 907A AYWW G G TO-92 (T0-226AA) CASE 29-11 STYLE 17 P2N2 = Device Code 907A = Specific Device A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device P2N2907A P2N2907AG P2N2907ARL1 P2N2907ARL1G P2N2907AZL1 P2N2907AZL1G Package Shipping TO-92 5000 Units / Bulk TO-92 (Pb-Free) 5000 Units / Bulk TO-92 2000 / Tape & Reel TO-92 (Pb-Free) 2000 / Tape & Reel TO-92 2000 / Tape & Ammo 2000 / Tape & Ammo TO-92 (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 4 1 Publication Order Number: P2N2907A/D P2N2907A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector -Emitter Breakdown Voltage (Note 1) (IC = -10 mAdc, IB = 0) V(BR)CEO -60 - Vdc Collector -Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO -60 - Vdc Emitter -Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ICEX - -50 nAdc Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 150C) ICBO - - -0.01 -10 Emitter Cutoff Current (VEB = -3.0 Vdc) IEBO - -10 nAdc Collector Cutoff Current (VCE = -10 V) ICEO - -10 nAdc Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IBEX - -50 nAdc 75 100 100 100 50 - - - 300 - - - -0.4 -1.6 - - -1.3 -2.6 fT 200 - MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo - 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo - 30 pF ton - 50 ns td - 10 ns tr - 40 ns toff - 110 ns ts - 80 ns tf - 30 ns OFF CHARACTERISTICS mAdc ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (Note 1) (IC = -500 mAdc, VCE = -10 Vdc) (Note 1) hFE Collector -Emitter Saturation Voltage (Note 1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base -Emitter Saturation Voltage (Note 1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (Notes 1 and 2) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) (Figures 1 and 5) Turn-Off Time Storage Time Fall Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) (Figure 2) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 P2N2907A INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME 5.0 ns -6.0 V 1.0 k 1.0 k 0 50 -16 V +15 V -30 V 200 ns 50 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 3 P2N2907A TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125C 25C 1.0 -55 C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25C tf 30 20 td @ VBE(off) = 0 V 3.0 -5.0 -7.0 -10 30 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT 100 70 50 ts = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 t, TIME (ns) t, TIME (ns) 300 200 -200 -300 -500 Figure 5. Turn-On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-Off Time http://onsemi.com 4 P2N2907A TYPICAL SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 W -500 mA, Rs = 560 W -50 mA, Rs = 2.7 kW -100 mA, Rs = 1.6 kW 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 C, CAPACITANCE (pF) IC = -50 mA -100 mA -500 mA -1.0 mA 4.0 0 100 30 Ceb 10 7.0 Ccb 5.0 3.0 2.0 -0.1 6.0 2.0 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 50 k 400 300 200 100 80 VCE = -20 V TJ = 25C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain - Bandwidth Product +0.5 -1.0 TJ = 25C -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) -0.8 VBE(on) @ VCE = -10 V -0.4 -0.2 RqVC for VCE(sat) -0.5 -1.0 -1.5 RqVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients http://onsemi.com 5 P2N2907A PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C 1 N SECTION X-X DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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