P2N2907AZL1G - ON Semiconductor

March, 2006 − Rev. 4

1Publication Order Number:

P2N2907A/D

P2N2907A

Amplifier Transistor

PNP Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −60 Vdc

Collector−Base Voltage VCBO −60 Vdc

Emitter−Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous IC−600 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

PD625

5.0

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD1.5

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient RqJA 200 °C/W

Thermal Resistance, Junction to Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−92

(T0−226AA)

CASE 29−11

STYLE 17

MARKING

DIAGRAM

http://onsemi.com

(Note: Microdot may be in either location)

123

P2N2

907A

AYWW G

P2N2 = Device Code

907A = Specific Device

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

P2N2907ARL1 TO−92

5000 Units / Bulk

P2N2907ARL1G TO−92

(Pb−Free)

5000 Units / Bulk

Device Package Shipping†

P2N2907A TO−92

2000 / Tape & Ammo

P2N2907AG TO−92

(Pb−Free)

2000 / Tape & Ammo

ORDERING INFORMATION

COLLECTOR

BASE

EMITTER

P2N2907AZL1 TO−92

P2N2907AZL1G TO−92

(Pb−Free)

2000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2000 / Tape & Reel

P2N2907A

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = −10 mAdc, IB = 0)

V(BR)CEO −60 −Vdc

Collector−Base Breakdown Voltage

(IC = −10 mAdc, IE = 0)

V(BR)CBO −60 −Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO −5.0 −Vdc

Collector Cutoff Current

(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)

ICEX − −50 nAdc

Collector Cutoff Current

(VCB = −50 Vdc, IE = 0)

(VCB = −50 Vdc, IE = 0, TA = 150°C)

ICBO −

−

−0.01

−10

mAdc

Emitter Cutoff Current

(VEB = −3.0 Vdc)

IEBO − −10 nAdc

Collector Cutoff Current

(VCE = −10 V)

ICEO − −10 nAdc

Base Cutoff Current

(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)

IBEX − −50 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −0.1 mAdc, VCE = −10 Vdc)

(IC = −1.0 mAdc, VCE = −10 Vdc)

(IC = −10 mAdc, VCE = −10 Vdc)

(IC = −150 mAdc, VCE = −10 Vdc) (Note 1)

(IC = −500 mAdc, VCE = −10 Vdc) (Note 1)

hFE 75

100

−

300

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

VCE(sat) −

−

−0.4

−1.6

Vdc

Base−Emitter Saturation Voltage (Note 1)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

VBE(sat) −

−

−1.3

−2.6

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Notes 1 and 2)

(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)

fT200 −MHz

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Cobo −8.0 pF

Input Capacitance

(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)

Cibo −30 pF

SWITCHING CHARACTERISTICS

Turn−On Time

(VCC = −30 Vdc, IC = −150 mAdc,

IB1 = −15 mAdc) (Figures 1 and 5)

ton −50 ns

Delay Time td−10 ns

Rise Time tr−40 ns

Turn−Off Time

(VCC = −6.0 Vdc, IC = −150 mAdc,

IB1 = IB2 = −15 mAdc) (Figure 2)

toff −110 ns

Storage Time ts−80 ns

Fall Time tf−30 ns

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

P2N2907A

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−16 V

200 ns

1.0 k

200

−30 V

TO OSCILLOSCOPE

RISE TIME ≤ 5.0 ns

+15 V −6.0 V

1.0 k 37

50 1N916

1.0 k

200 ns

−30 V

TO OSCILLOSCOPE

RISE TIME ≤ 5.0 ns

INPUT

Zo = 50 W

PRF = 150 PPS

RISE TIME ≤ 2.0 ns

P.W. < 200 ns

INPUT

Zo = 50 W

PRF = 150 PPS

RISE TIME ≤ 2.0 ns

P.W. < 200 ns

Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

P2N2907A

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TYPICAL CHARACTERISTICS

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

3.0

0.2

−0.1

TJ = 125°C

25°C

−55 °C

VCE = −1.0 V

VCE = −10 V

hFE, NORMALIZED CURRENT GAIN

2.0

−0.2 −0.3 −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 −500

Figure 4. Collector Saturation Region

IB, BASE CURRENT (mA)

−0.4

−0.6

−0.8

−1.0

−0.2

V , COLLECTOR−EMITTER VOLTAGE (VOLTS)

IC = −1.0 mA

−0.005

−10 mA

−0.01

−100 mA −500 mA

−0.02 −0.03 −0.05 −0.07 −0.1 −0.2 −0.3 −0.5 −0.7 −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50

Figure 5. Turn−On Time

IC, COLLECTOR CURRENT

300

−5.0

Figure 6. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

−5.0

t, TIME (ns)

200

100

7.0

5.0

3.0

−7.0 −10 −20 −30 −50 −70 −100 −200 −300 −500

2.0 V

td @ VBE(off) = 0 V

VCC = −30 V

IC/IB = 10

TJ = 25°C

500

300

100

7.0

5.0

−7.0 −10 −20 −30 −50 −70 −100 −200 −300 −500

200

t′s = ts − 1/8 tf

VCC = −30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

P2N2907A

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TYPICAL SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

0.01

Figure 8. Source Resistance Effects

Rs, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

f = 1.0 kHz

IC = −50 mA

−100 mA

−500 mA

−1.0 mA

Rs = OPTIMUM SOURCE RESISTANCE

8.0

6.0

4.0

2.0

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

8.0

6.0

4.0

2.0

050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

IC = −1.0 mA, Rs = 430 W

−500 mA, Rs = 560 W

−50 mA, Rs = 2.7 kW

−100 mA, Rs = 1.6 kW

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

Figure 10. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

C, CAPACITANCE (pF)

−0.1

2.0

Figure 11. “On” Voltage

IC, COLLECTOR CURRENT (mA)

−1.0

Figure 12. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = −10 V

RqVC for VCE(sat)

fT, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

COEFFICIENT (mV/ °C)

7.0

5.0

3.0

−0.2 −0.3 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20−30

400

300

200

100

−1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 −1000

−0.8

−0.6

−0.4

−0.2

−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500

+0.5

−0.5

−1.0

−1.5

−2.0

−2.5

−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500

Ceb

Ccb

VCE = −20 V

TJ = 25°C

RqVB for VBE

P2N2907A

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

SECTION X−X

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

TO−92 (TO−226)

CASE 29−11

ISSUE AL

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5773−3850

P2N2907A/D

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