IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C Boca Semiconductor Corp TIP 41, 41A, 41B, 41C TIP 42, 42A, 42B, 42C (BSC) NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 B C E DIM MIN . A B C D E F G H J K L M N O 14.42 9.63 3.56 A O 3 K All dimin sions in mm. L N 1 2 O H F J D G M 3 MAX. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 6 A; IB = 0.6 A D.C. current gain IC = 3 A; VCE = 4 V VCBO VCEO IC Ptot Tj 41 42 max. 40 max. 40 max. max. max. VCEsat max. 1.5 hFE min. max. 15 75 RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current VCBO VCEO VEBO IC 41 42 max. 40 max. 40 max. max. http://www.bocasemi.com Continental Device India Limited Data Sheet 41A 41B 42A 42B 60 80 60 80 6.0 65 150 41A 41B 42A 42B 60 80 60 80 5.0 6.0 41C 42C 100 100 V V A W C V 41C 42C 100 100 V V V A page: 1 Page 1 of 3 TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C Collector current (Peak value) Base current Total power dissipation up to TC = 25C Derate above 25C Total power dissipation up to TA = 25C Derate above 25C Junction temperature Storage temperature ICM IB Ptot Tj Tstg THERMAL RESISTANCE From junction to ambient From junction to case Rth j-a Rth j-c Ptot max. max. max. max. max. max. max. 41 42 ICEO ICEO ICES max. 0.7 max. - max. IEBO max. VCEO(sus)* min. 40 VCBO min. 40 VEBO min. IC = 3 A; VCE = 4 V Small-signal current gain IC = 0.5 A; VCE = 10 V; f = 1 KHz Transition frequency IC = 0.5 A; VCE = 10 V; f = 1 MHz A A W W/C W W/C C C 62.5 1.92 CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 30 V IB = 0; VCE = 60 V VBE = 0; VCE = VCEO Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 30 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 6 A; IB = 0.6 A Base-emitter on voltage IC = 6 A; VCE = 4 V D.C. current gain IC = 0.3 A; VCE = 4 V 10 2.0 65 0.52 2.0 0.016 150 -65 to +150 C/W C/W 41A 41B 41C 42A 42B 42C 0.7 - - 0.7 0.4 - 0.7 1.0 60 60 mA mA mA mA 80 80 100 100 5.0 V V V VCEsat* max. 1.5 V VBE(on)* max. 2.0 V hFE* min. 30 hFE* min. max. 15 75 |h fe| min. 20 fT min. (1) 3 MHz * Pulse test: pulse width 300 s, duty cycle 2%. (1) fT = |hfe|* ftest http://www.bocasemi.com Continental Device India Limited Data Sheet page: 2 Page 2 of 3