Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
MMBT2222A 1
2
1
2
33
SOT-23
Rating Unit
Characteristic
Collector-Emitter Voltage Vdc
Collector-Base Voltage Vdc
Emitter-Base Voltage Vdc
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600 mAdc
Characteristic
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Emitter - Base Breakdowe Voltage
( IE=10 uAdc, IC=0 )
Collector Cutoff Current
( VCB=60 Vdc, IE=0 )
( VCB=60 Vdc, IE=0, TA=125oC )
Collector-Emitter Breakdowe Voltage
( IC=10mAdc, IB=0 )
Emitter Cutoff Current ( VEB=3.0 Vdc, IC=0 )
Unit
Vdc
Collector-Emitter Breakdowe Voltage
( IC=10uAdc, IE=0 ) Vdc
Vdc
uAdc
nAdc
Collector Cutoff Current
( VCE=60 Vdc, VEB (off)=3.0 Vdc )
Symbol
V(BR)EBO
V(BR)CEO
ICBO
IEBO
IBL
V(BR)CBO
ICEX
Min.
6.0
40
-
-
-
-
75
-
Max.
-
-
0.01
10
100
20
-
10 nAdc
nAdcBase Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc )
MMBT2222A=1P
Max.
225
1.8
300
2.4
556
417
-55 to +150
Unit
mW
mW / oC
mW
mW / oC
oC / W
oC / W
oC
Symbol
PD
PD
R
JA
R
JA
TJ,TSTG
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EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology Corporation
Characteristic Symbol Min. Max. Unit
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
HFE
35
50
75
35
100
50
40
-
-
-
-
300
-
-
-
ON CHARACTERISTICS(3)
VCE(sat) Vdc
DC Current Gain
 ( IC=0.1 mAdc, VCE=10 Vdc )
 ( IC=1.0 mAdc, VCE=10 Vdc )
 ( IC=10 mAdc, VCE=10 Vdc )
 ( IC=10 mAdc, VCE=10 Vdc, TA=-55oC )
 ( IC=150 mAdc, VCE=10 Vdc )(3)
( IC=150 mAdc, VCE=1.0 Vdc )(3)
( IC=500 mAdc, VCE=10 Vdc )(3)
Collector-Emitter Saturation Voltage(3)
 ( IC=150 mAdc, IB=15 mAdc )
 ( IC=500 mAdc, IB=50 mAdc ) -
-0.3
1.0
VBE(sat) Vdc
Base-Emitter Saturation Voltage(3)
 ( IC=150 mAdc, IB=15 mAdc )
 ( IC=500 mAdc, IB=50 mAdc ) 0.6
-1.2
2.0
fT
Cobo
300
-
-
8.0
MHZ
SMALL-SIGNAL CHARACTERISTIC
Cibo pF
pF
Current-Gain-Bandwidth Product(4)
 ( IC=20 mAdc, VCE=20 Vdc, f=100 MHZ )
Output Capacitance
 ( VCB=10 Vdc, IE=0, f=1.0 MHZ )
Input Capacitance
 ( VEB=0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
 ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
 ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ )
- 25
hie k ohms
2.0
0.25 8.0
1.25
Voltage Feedback Ratio
 ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
 ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) hre X 10-4
-
-8.0
4.0
Small-Signal Current Gain
 ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
 ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) hfe -
50
75 300
375
Output Admittance
 ( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
 ( VCE=10 Vdc, IC=10 mAdc, f=1.0 kHZ ) hoe u mhos
5.0
25 35
200
Collector Base Time Constant
 ( VCB=10 Vdc, IC=100 uAdc, RS = 1.0 k ohms, f=1.0 kHZ )
Delay Time
Rise Time
Storage Time
Fall Time
( VCC=30 Vdc, VBE (off) = -0.5 Vdc,
IC =150 mAdc, IB1 = 15 mAdc )
( VCC=30 Vdc, IC = 150 mAdc,
IB1 =IB2 = 15 mAdc )
rb, Cc ps- 150
Noise Figure
 ( VCE=10 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ ) NFdB- 4.0
td
tf
-
-
10
60
tr - 25 nS
ts - 225
SWITCHING CHARACTERISTICS
nS
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(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
(2) fT is defined as the frequency at which hfe extrapolates to unity.
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REV. : 0
Zowie Technology Corporation MMBT2222A
Figure 4. Collector Saturation Region
IB, BASE CURRENT ( mA )
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT ( mA )
hFE, DC CURRENT GAIN
Figure 1. Turn-On Time Figure 2. Turn-Off Time
1.0 k
1N914
+30 V
200
1.0 k
CS* < 10 pF*
< 2.0 ns < 20 ns
-4.0V
-2.0 V -14 V
1.0 to 100 us,
DUTY CYCLE = 2%
1.0 to 100 us,
DUTY CYCLE = 2%
+16 V +16 V
00
Scope rise time < 4.0 ns
* Total shunt capacitance of test jig and connectors
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
200
CS* < 10 pF*
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
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Zowie Technology Corporation MMBT2222A
Figure 5. Turn - On Time
IC, COLLECTOR CURRENT ( mA )
Figure 7. Frequency Effects Figure 8. Source Resistance Effects
IC, COLLECTOR CURRENT ( mA )
t, TIME ( nS )
t, TIME ( nS )
f, FREQUENCY ( kHZ )
NF, NOISE FIGURE ( dB )
RS, SOURCE RESISTANCE (OHMS)
Figure 9. Capacitances
REVERSE VOLTAGE ( VOLTS )
CAPACITANCE ( pF )
Figure 10. Current-Gain Bandwidth Product
IC, COLLECTOR CURRENT ( mA )
tT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHZ)
Figure 6. Turn - Off Time
NF, NOISE FIGURE ( dB )
70
100
200
50
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
3.0
2.0 300 500
TJ= 25oC
IC/B = 10
tr @ VCC=30V
td @ VEB(off)=2.0V
td @ VEB(off)=0
500
5.0
7.0
10
20
30
50
70
100
200
300
10 20 70 1005.0 7.0 30 50 200 300 500
VCC=30 V
IC/IB=10
IB1=IB1
TJ= 25oC
4.0
6.0
8.0
10
2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5
01000.01 0.02 0.05
IC =1.0mA, RS=150
500uA, RS=200
100uA, RS=2.0k
50uA, RS=4.0k IC =50uA
f=1.0kHz
RS =OPTIMUM
SOURCE
RESISTANCE
4.0
6.0
8.0
10
2.0
050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
500uA
100uA
1.0mA
3.0
5.0
7.0
10
2.00.1 1.0 2.0 3.0 5.0 7.0 10 20 30 500.2 0.3 0.5 0.7
20
30
Ceb
Ccb
70
100
200
300
50
500
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
TA= 25oC
VCE = 10 V
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Zowie Technology Corporation MMBT2222A
Figure 11. " On " Voltage
IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA )
V, VOLTAGE ( VOLTS )
COEFFICIENT ( mV/oC )
Figure 12. Temperature Coefficients
0.4
0.6
0.8
1.0
0.2
00.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500 1.0 k
TJ= 25oC
1.0 V
VBE(sat) @ IC/IB=10
VCE(sat) @ IC/IB=10
VBE(on) @ VCE=10V
-0.5
0
+0.5
-1.0
-1.5
-2.5
-2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
R VC for VCE(sat)
R VB for VBE