70502TN (KT)/71598HA (KT)/3257AT/8253KI, TS (KOTO) No.1047-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-V
EBO
, AF Amp Applications
Ordering number:ENN1047C
2SA1246/2SC3114
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1246
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2003B
[2SA1246/2SC3114]
Features
· High VEBO.
· Wide ASO and highly resistant to breakdown.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 06)–(V
egatloVrettimE-ot-rotcelloCV
OEC 05)–(V
egatloVesaB-ot-rettimEV
OBE 51)–(V
tnerruCrotcelloCI
C051)–(Am
)esluP(tnerruCrotcelloCI
PC 003)–(Am
noitapissiDrotcelloCP
C004Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
˚C
˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V04)–(= E0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V01)–(= C0=1.0)–(Aµ
niaGtnerruCCDh
EF VEC I,V6)–(= CAm1)–(=*001*065
tcudorPhtdiwdnaB-niaGf
TVEC I,V6)–(= CAm1)–(=001zHM
ecnaticapaCtuptuOesabnommoCC
bo VBC zHM1=f,V6)–(=0.3)2.4(Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am05)–(= BAm5)–(=5.0)–(V
* : The 2SA1246/2SC3114 are classified as follows according to hFE at 1mA. Continued on next page.
knaRRSTU
hEF 002ot001082ot041004ot002065ot082
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
5.0
4.0
0.5
0.6
2.0
14.0 5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
No.1047-2/4
2SA1246/2SC3114
ITR03040
IC -- VCE
0 --10 --20 --30 --40 --50
0
--4
--8
--12
--16
--20
0
4
8
12
16
20
--20
µ
A
--10
µ
A
ITR03041
IC -- VCE
01020304050
IB=0
--70
µ
A
--30
µ
A
--40
µ
A
--50
µ
A
--60
µ
A
2SA1246
20
µ
A
10
µ
A
IB=0
30
µ
A
40
µ
A
50
µ
A
60
µ
A
70
µ
A
2SC3114
ITR03038
IC -- VCE
0 --0.2 --0.4 --0.6 --0.8 --1.0
0
--20
--10
--30
--40
--50
--100
µ
A
--50
µ
A
ITR03039
IC -- VCE
0 0.2 0.4 0.6 0.8 1.0
IB=0
--150
µ
A
--200
µ
A
--250
µ
A
2SA1246
From above
--500
µ
A
--450
µ
A
--400
µ
A
--350
µ
A
--300
µ
A
100
µ
A
50
µ
A
IB=0
150
µ
A
200
µ
A
250
µ
A
2SC3114
From above
500
µ
A
450
µ
A
400
µ
A
350
µ
A
300
µ
A
0
20
10
30
40
50
ITR03042
IC -- VBE
0 --0.4 --1.2--0.8 --1.6
IC -- VBE
1.20.8 1.60 0.4
40
100
20
0
80
60
ITR03043
2SA1246
VCE=--6V
Pulse
0
--40
--20
--60
--80
--100 2SC3114
VCE=6V
Pulse
Collector Current, IC–mA
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
Continued from preceding page.
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=06)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞05)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=51)–(V
No.1047-3/4
2SA1246/2SC3114
ITR03048
Cob -- VCB
ITR03049
Cob -- VCB
--1.0 23 5757 --10 23 57
--100
10
1.0
2
7
5
3
2
3
1.0 23 5757 10 23 57
100
10
1.0
2
7
5
3
2
3
2SA1246
f=1MHz 2SC3114
f=1MHz
ITR03046 ITR03047
--1.0 23 577
--10 22357
--100
2
3
10
7
5
2
3
7
5
1000
100
fT -- ICfT -- IC
2SA1246
VCE=--6V
Pulse
2SC3114
VCE=6V
Pulse
1.0 23 577
10 22357
100
2
3
10
7
5
2
3
7
5
1000
100
ITR03044 ITR03045
--0.1 252 --1.0 52 --10 52 --100
3
2
100
1000
7
5
3
2
7
5
0.1 252 1.0 52 10 52 100
3
2
100
1000
7
5
3
2
7
5
hFE -- IChFE -- IC
2SA1246
VCE=--6V
Pulse
2SC3114
VCE=6V
Pulse
ITR03050
VCE(sat) -- IC
--1.0 --10
23 57 --100
22357
VCE(sat) -- IC
ITR03051
2SA1246
IC / IB=10
3
5
7
5
7
3
2
3
2
--0.1
--10
1.0 10
23 57 100
22357
3
5
7
5
7
3
2
3
2
0.1
1.0
2SC3114
IC / IB=10
DC Current Gain, hFE
Collector Current, IC–mA
DC Current Gain, hFE
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Common Base Output Capacitance, Cob – pF
Common Base Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
PS No.1047-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
2SA1246/2SC3114
0 20 40 60 12080 100 140 160
ITR03052
PC -- Ta
0
500
300
400
100
200
Collector Dissipation, P
C
–mW
Ambient Temperature, Ta – ˚C
