BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT-23 (TO-236) CASE 318-08 STYLE 6 Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BCX17, BCX19 BCX18 VCEO Collector - Base Voltage BCX17, BCX19 BCX18 VCBO Emitter - Base Voltage VEBO 5.0 Vdc IC 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate above 25C PD 225 mW 1.8 mW/C 556 C/W 300 2.4 mW mW/C Collector Current - Continuous PNP COLLECTOR 3 1 BASE Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA PD COLLECTOR 3 1 BASE Vdc 45 25 2 EMITTER 2 EMITTER Vdc 50 30 MARKING DIAGRAM XX M G G THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient NPN RqJA 417 C/W TJ, Tstg -55 to +150 C 1 XX M G = T1, T2 or U1 = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 7 1 Publication Order Number: BCX17LT1/D BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) BCX17, BCX19, SBCX19 BCX18 V(BR)CEO Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IC = 0) BCX17, BCX19, SBCX19 BCX18 V(BR)CES Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) ICBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc 45 25 - - - - Vdc 50 30 - - - - - - - - 100 5.0 - - 10 100 70 40 - - - 600 - - - - 0.62 - - 1.2 nAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) - Vdc Vdc ORDERING INFORMATION Device BCX17LT1G BCX18LT1G BCX19LT1G SBCX19LT1G Specific Marking Package Shipping T1 SOT-23 (Pb-Free) 3,000 / Tape & Reel T2 SOT-23 (Pb-Free) 3,000 / Tape & Reel U1 SOT-23 (Pb-Free) 3,000 / Tape & Reel U1 SOT-23 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN hFE, DC CURRENT GAIN 1000 VCE = 1 V TJ = 25C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 1.0 1.0 TJ = 25C TA = 25C 0.8 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 Figure 2. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 3. "On" Voltages 100 +1 qVC for VCE(sat) C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/C) VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 0 -1 qVB for VBE -2 1 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1 0.1 1000 Figure 4. Temperature Coefficients 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances http://onsemi.com 3 100 BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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