Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 0 1Publication Order Number:
DTA114EM3/D
DTA114EM3T5G Series
Preferred Devices
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−723 package which is designed for low power surface mount
applications.
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SOT−723 Package can be Soldered using Wave or Reflow.
•Available in 4 mm, 8000 Unit Tape & Reel
•These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON
DIGITAL
TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
xx = Specific Device Code
(See Marking Table on page 2)
M = Date Code
MARKING
DIAGRAM
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SOT−723
CASE 631AA
Style 1
3
2
1
XX M
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
DTA114EM3T5G Series
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2
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
Device Marking R1 (K) R2 (K) Package Shipping†
DTA114EM3T5G
DTA124EM3T5G*
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G*
DTA123EM3T5G*
DTA143EM3T5G*
DTA143ZM3T5G*
DTA124XM3T5G
DTA123JM3T5G*
DTA115EM3T5G
DTA144WM3T5G*
6A
6B
6C
6D
6E
6F
6H
6J
6K
6L
6M
6N
6P
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
10
22
47
47
∞
∞
2.2
4.7
47
47
47
100
22
SOT−723
(Pb−Free) 8000/Tape & Reel
*Available upon request
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1.) @ TA = 25°C
Derate above 25°C
PD260
2.0 mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 1.) RJA 480 °C/W
Total Device Dissipation,
FR−4 Board (Note 2.) @ TA = 25°C
Derate above 25°C
PD600
4.8 mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 2.) RJA 205 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter−Base Cutoff Current DTA114EM3T5G
(VEB = 6.0 V, IC = 0) DTA124EM3T5G
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA115EM3T5G
DTA144WM3T5G
IEBO −
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − Vdc
Collector−Emitter Breakdown Voltage (Note 3.)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc
ON CHARACTERISTICS (Note 3.)
DC Current Gain DTA114EM3T5G
(VCE = 10 V, IC = 5.0 mA) DTA124EM3T5G
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA115EM3T5G
DTA144WM3T5G
hFE 35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
250
250
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) DTA123EM3T5G
(IC = 10 mA, IB = 1 mA) DTA114TM3T5G/DTA143TM3T5G/
DTA143ZM3T5G/DTA124XM3T5G/DTA143EM3T5G
VCE(sat) − − 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) DTA114EM3T5G
DTA124EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) DTA144EM3T5G
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) DTA115EM3T5G
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) DTA144WM3T5G
VOL −
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
VOH 4.9 − − Vdc
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
Input Resistor DTA114EM3T5G
DTA124EM3T5G
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G
DTA123EM3T5G
DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA115EM3T5G
DTA144WM3T5G
R1 7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
k
Resistor Ratio DTA114EM3T5G/DTA124EM3T5G/DTA144EM3T5G
/ DTA115EM3T5G
DTA114YM3T5G
DTA114TM3T5G/DTA143TM3T5G
DTA123EM3T5G/DTA143EM3T5G
DTA143ZM3T5G
DTA124XM3T5G
DTA123JM3T5G
DTA144WM3T5G
R1/R20.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Figure 1. Derating Curve
250
200
150
100
50
0
−50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
PD, POWER DISSIPATION (MILLIWATTS)
RJA = 480°C/W
300
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TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EM3T5G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
TA=−25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
−25°C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=−25°C
25°C
75°C
75°C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=−25°C
25°C
75°C
25°C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
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6
TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EM3T5G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0 10 20 30
VO = 0.2 V
TA=−25°C
75°C
100
10
1
0.1 40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 11. Input Voltage versus Output Current
0.01
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
TA=−25°C
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
IC/IB = 10
25°C
−25°C
VCE = 10 V
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
75°C25°C
TA=−25°C
VO = 5 V
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7
TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EM3T5G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
−25°C
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 010
25°C
Vin, INPUT VOLTAGE (VOLTS)
−25°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
123456 789
Figure 16. Input Voltage versus Output Current
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
TA=−25°C
25°C
75°C
50
IC/IB = 10
TA=−25°C25°C
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
TA=75°C
VO = 0.2 V
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8
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YM3T5G
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
−25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25°C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25°C
IC/IB = 10 TA=−25°C
TA=75°C25°C
−25°C
VO = 5 V
VO = 0.2 V 25°C
TA=−25°C
75°C
75°C
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TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EM3T5G
75°C
25°C
−25°C
Figure 23. Maximum Collector Voltage versus
Collector Current Figure 24. DC Current Gain
Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 27. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
76543210 IC, COLLECTOR CURRENT (mA) 100101
100
10
1
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.1
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
121086420
1
10
181614 20
Vin, INPUT VOLTAGE (VOLTS)
IC/IB = 10
75°C
25°C
TA = −25°C
VCE = 10 V
75°C
25°C
TA = −25°C
VO = 5 V
VO = 0.2 V
75°C
25°CTA = −25°C
f = 1 MHz
IE = 0 V
TA = 25°C
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TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WM3T5G
Figure 28. Maximum Collector Voltage versus
Collector Current Figure 29. DC Current Gain
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 32. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050 IC, COLLECTOR CURRENT (mA) 100101
100
10
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
11987
100
151050
1
10
20 25
Vin, INPUT VOLTAGE (VOLTS)
504540
0.1
0.01
10
1.2 f = 1 MHz
IE = 0 V
TA = 25°C
75°C
25°C
TA = −25°C
VO = 5 V
75°C
25°C
TA = −25°C
VO = 0.2 V
75°C
25°C
TA = −25°C
IC/IB = 10 VCE = 10 V
75°C
25°C
TA = −25°C
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11
PACKAGE DIMENSIONS
D
b1
E
b
e
A
L
C
H
−Y−
−X−
X0.08 (0.0032) Y
2X
E
12
3
1.0
0.039
mm
inches
SCALE 20:1
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.20 0.27
b1 0.25 0.3 0.35
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L0.15 0.20 0.25
0.018 0.020 0.022
0.0059 0.0079 0.0106
0.010 0.012 0.014
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
MIN NOM MAX
INCHES
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
SOT−723
CASE 631AA−01
ISSUE A
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOT−723
SOLDERING FOOTPRINT*
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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DTA114EM3/D
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