CYStech Electronics Corp.
Spec. No. : C355N3-A
Issued Date : 2004.04.13
Revised Date
Page No. : 1/4
BAS21N3 CYStek Product Specification
High voltage switching diode
BAS21N3
Description
The BAS21N3 is a general purpose diode fabricated in planar technology and encapsulated in a small
SOT-23 plastic SMD package.
Features
•Fast switching speed : max. 50ns
•Small plastic SMD package
•General application.
•Continuous reverse voltage : max. 200V
•Repetitive peak reverse voltage : max. 250V
•Repetitive peak forward current : max. 625mA
Applications
•General purpose switching in e.g. surface mounted circuits.
Symbol Outline
SOT-23
BAS21N3
1：Anode
2：Not Connected
3：Cathode
Anode
Cathode
1 2
3
Not Connected
CYStech Electronics Corp.
Spec. No. : C355N3-A
Issued Date : 2004.04.13
Revised Date
Page No. : 2/4
BAS21N3 CYStek Product Specification
Absolute Maximum Ratings @TA=25℃
Parameter Symbol Min Max Unit
Repetitive peak reverse voltage VRRM - 250 V
Continuous reverse voltage VR - 200 V
Continuous forward current IF - 200 mA
Repetitive peak forward current IFRM 625 mA
Non-repetitive peak forward current
@square wave, Tj=25℃ prior to surge t=1µs
t=100µs
t=10ms
IFSM
-
-
-
9
3
1.7
A
A
A
Total power dissipation(Note 1) Ptot 250 mW
Junction Temperature Tj - 150
°C
Storage Temperature Tstg -65 +150
°C
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters Symbol Conditions Min Typ. Max Unit
Forward voltage VF IF=100mA
IF=200mA - - 1
1.25
V
V
Reverse current IR VR=200V
VR=200V,Tj=150℃ - -
100
100
nA
µA
Diode capacitance Cd VR=0V, f=1MHz - - 5 pF
Reverse recovery time trr
when switched from IF=30mA to
IR=30mA,RL=100Ω, measured
at IR=3mA
- - 50 ns
Thermal Characteristics
Symbol Parameter Conditions Value Unit
Rth,j-tp thermal resistance from junction to tie-point 330 ℃/W
Rth, j-a thermal resistance from junction to ambient Note 1 500 ℃/W
Note 1: Device mounted on an FR-4 PCB.
CYStech Electronics Corp.
Spec. No. : C355N3-A
Issued Date : 2004.04.13
Revised Date
Page No. : 3/4
BAS21N3 CYStek Product Specification
Characteristic Curves
Forward Characteristics
0.01
0.1
1
10
100
1000
012
Instantaneous Forward Voltage---VF(V)
Instantaneous Forward Current---I F(mA)
Reverse Leakage Current vs Junction Temperature
0.01
0.1
1
10
100
0 100 200
Junction Temperature---Tj(℃)
Reverse Leakage Current---I R(μA)
Power Derating Curve
0
50
100
150
200
250
300
0 50 100 150 200
Ambient Temperature---TA(℃)
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C355N3-A
Issued Date : 2004.04.13
Revised Date
Page No. : 4/4
BAS21N3 CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75
G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H 0.0005 0.0040 0.013 0.10
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HJ
K
D
A
L
G
V
C
B
3
2
1
S
Style:Pin.1. Anode 2. Not Connected
3.Cathode
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
JS
