MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : SOT- 23 small outline plastic package A 2.80 3.00 0.110 0.118 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 1.20 1.40 0.047 0.055 C 0.30 0.50 0.012 0.020 High temperature soldering guaranteed: 260C/10s D 1.80 2.00 0.071 0.079 Weight : 0.008gram (approximately) E 2.25 2.55 0.089 0.100 Marking Code : 1AM F 0.90 1.20 0.035 0.043 0.550 REF G Ordering Information Suggested PAD Layout Packing Marking 0.95 SOT-23 MMBT3904 RF 3K / 7" Reel 1AM 0.037 SOT-23 MMBT3904 RFG 3K / 7" Reel 1AM Package Part No. 0.022 REF 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units PD 300 mW Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V IC 200 mA TJ, TSTG -55 to + 150 C Power Dissipation Collector Current Junction and Storage Temperature Range Notes:1. Valid provided that electrodes are kept at ambient temperature Version : C11 MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor Electrical Characteristics Type Number Max Units IC= 10A IE= 0 Symbol V(BR)CBO Min Collector-Base Breakdown Voltage 60 - V Collector-Emitter Breakdown Voltage IC= 1mA IB= 0 V(BR)CEO 40 - V Emitter-Base Breakdown Voltage IE= 10A IC= 0 V(BR)EBO 6 - V IE= 0 ICBO - 0.1 A ICEO - 50 nA IEBO - 0.1 A 100 400 Collector Cut-off Current VCB= 60V Collector Cut-off Current VCE= 30V Emitter Cut-offCurrent VEB= 5V VBE(OFF)= 3V IC= 0 VCE= 1V IC= 10mA VCE= 1V IC= 50mA VCE= 1V IC= 100mA Collector-Emitter saturation voltage IC= 50mA IB= 5mA VCE(sat) - 0.3 Base-Emitter saturation voltage IC= 50mA IB= 5mA VBE(sat) - 0.95 V IC= 10mA DC current gain hFE 60 - 30 V Transition frequency VCE= 20V f= 100MHz fT 250 - MHz Delay time VCC=3V VBE=0.5V IC=10mA IB1=1.0mA td - 35 nS Rise time VCC=3V VBE=0.5V IC=10mA IB1=1.0mA tr - 35 nS Storage time VCC=3V IC=10mA IB1=IB2=1.0mA ts - 200 nS Fall time VCC=3V IC=10mA IB1=IB2=1.0mA tf - 50 nS Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d P1 T E A C F W B Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 0.10 2.77 0.10 1.22 0.10 1.50 0.10 178 1 55 Min 13.0 0.20 1.75 0.10 3.50 0.05 4.00 0.10 2.00 0.05 0.229 0.013 8.10 0.20 12.30 0.20 W1 D D2 D1 Direction of Feed Version : C11 MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor 500 V CE = 5V 125 C 300 25 C 200 - 40 C 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 0.8 - BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current = 10 - 40 C 25 C 0.6 125 C 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 BE(ON) 100 V 400 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Rating and Characteristic Curves Collector-Emitter Saturation Voltage vs Collector Current 0.15 125 C 0.1 25 C 0.05 - 40 C 0.1 1 VCE = 5V 0.8 - 40 C 25 C 0.6 125 C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 10 f = 1.0 MHz VCB = 30V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 100 Capacitance vs Reverse Bias Voltage 500 10 1 0.1 25 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature 100 = 10 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 150 5 4 3 C ibo 2 C obo 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Version : C11