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April 1st, 2010
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Rev.3.00 Apr 27, 2006 page 1 of 6
2SK2408
Silicon N Channel MOS FET REJ03G1011-0300
(Previous: ADE-208-13 58)
Rev.3.00
Apr 27, 2006
Application
High speed power switching
Features
• Low on-resistance
• Built-in fast recovery diode (trr = 120 ns typ)
• High speed switching
• Low drive current
• Suitable for switching regulator, motor control
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
1. Gate
2. Drain
(Flange
)
3. Source
123
D
G
S
2SK2408
Rev.3.00 Apr 27, 2006 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 7 A
Drain peak current ID(pulse)*1 28 A
Body to drain diode reverse drain current IDR 7 A
Channel dissipation Pch*2 60 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.7 0.9 Ω I
D = 4 A, VGS = 10 V*3
Forward transfer admittance |yfs| 3.5 6.0 — S ID = 4 A, VDS = 10 V*3
Input capacitance Ciss — 1100 — pF
Output capacitance Coss — 310 — pF
Reverse transfer capacitance Crss — 50 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 15 — ns
Rise time tr — 55 — ns
Turn-off delay time td(off) — 100 — ns
Fall time tf — 48 — ns
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
Body to drain diode forward v oltage VDF — 0.9 — V IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time trr — 120 — ns
IF = 7 A, VGS = 0,
diF / dt = 100 A / µs
Note: 3. Pulse Test
2SK2408
Rev.3.00 Apr 27, 2006 page 3 of 6
Main Characteristics
Case Temperature T
C
(°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
20
20 50
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
16
4
10 30 400
8
12
Drain Current I
D
(A)
V
GS
= 4 V
Pulse Test
7 V
10 V 6 V
5 V
20
410
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
16
4
2680
8
12
V
DS
= 20 V
Pulse Test –25°C
75°C
Ta = 25°C
10
820
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
8
2
412160
4
6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
I
D
= 2 A
10 A
5 A
5
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2
0.2
0.1
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
0.05
10
V
GS
= 10 V
0.5 2 5 20 50
1
15 V
80
60
40
20
050 100 150 200 1 3 10 30 100 300 1000
50
20
10
2
5
1
0.2
0.1
0.05
0.5
100 µs
10 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
2SK2408
Rev.3.00 Apr 27, 2006 page 4 of 6
2.0
40 160
Case Temperature TC (°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
1.6
0.4
0 80 120
0
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
–40
V
GS
= 10 V
Pulse Test
I
D
= 10 A
2, 5 A
50
0.2 10
Drain Current ID (A)
10
1
0.5 5
5
2
0.1 1
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
20
V
DS
= 20 V
25°C
T
C
= –25°C
75°C
0.5
Pulse Test
2
5,000
0.5 10
Reverse Drain Current IDR (A)
2,000
100
150.2
500
1,000
50
2
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
200
20
1,000
20 50
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10 30 40
Typical Capacitance vs.
Drain to Source Voltage
0
100
V
GS
= 0
f = 1 MHz
Crss
Coss
Ciss
5,000
5
10
500
16 40
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
400
100
82432
200
300
20
16
4
0
8
12
Gate to Source Voltage VGS (V)
0
V
GS
V
DS
V
DD
= 400 V
250 V
100 V
I
D
= 7 A
Gate Charge Qg (nc)
250 V
400 V
V
DD
= 100 V
500
Drain Current ID (A)
Switching Time t (ns)
200
5
50
100
10
Switching Characteristics
td(off)
0.50.2 1
tf
trtd(on)
20
V
GS
= 10 V V
DD
= 30 V
PW = 2 µs, duty < 1%
21052
0
•
•
2SK2408
Rev.3.00 Apr 27, 2006 page 5 of 6
Pulse Test
V
GS
= 0, –10 V
20
0.8 2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
16
0.4 1.2 1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
0
4
10 V
15 V
Normalized Transient Thermal Impedance γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Vin
10 V 50 Ω
D.U.T.
Vout Monitor
R
L
V
DD
30 V
=
..
Waveforms
Vin
td(on)
10%
tr
90%
Vout 10%
90% 90%
tf
td(off)
10%
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 2.08°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK2408
Rev.3.00 Apr 27, 2006 page 6 of 6
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 Max
1.5 Max
11.5 Max
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
–0.08
Package Name
PRSS0004AC-A TO-220AB / TO-220ABV
MASS[Typ.]
1.8gSC-46
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK2408-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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Colophon .6.0
